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1. 发明授权

US07411097B2 Thiol compound, copolymer and method for producing the copolymer 有权
标题翻译：硫醇化合物，共聚物和共聚物的制造方法
公开(公告)号：US07411097B2
公开(公告)日：2008-08-12
申请号：US11713580
申请日：2007-03-01
申请人： Takanori Yamagishi , Takahito Mita
发明人： Takanori Yamagishi , Takahito Mita
IPC分类号： C07C319/02
CPC分类号： C08F2/38 , C07C323/12 , C07C323/17 , C07C2602/42 , G03F7/0046 , G03F7/0397 , G03F7/085
摘要： By resolving objections in the prior art, provided are a novel copolymer suitable as a coating polymers which is excellent in adhesion to a substrate and can be used suitably as the polymer for the coating film having durability against pattern collapse in the finer pattern formation for progressed lithography technology and a method for producing the copolymer, as well as a novel thiol compound useful as a chain transfer agent in the production of the copolymer. The novel thiol compound of the present invention has the structure represented by the formula (1); wherein R1 is a bivalent substituent selected from linear, branched or cyclic saturated hydrocarbon having 1 to 15 carbon atoms.
摘要翻译：通过解决现有技术中的异议，提供了适合作为与基材的粘合性优异的涂料聚合物的新型共聚物，并且可以适当地用作具有耐磨性的涂膜的聚合物，以在更精细的图案形成中具有耐图案塌陷光刻技术和共聚物的制造方法，以及在共聚物的制造中可用作链转移剂的新型硫醇化合物。本发明的新型硫醇化合物具有式（1）所示的结构。其中R 1是选自具有1至15个碳原子的直链，支链或环状饱和烃的二价取代基。

2. 发明申请

US20070161764A1 Novel thiol compound, copolymer and method for producing the copolymer 有权
标题翻译：新型硫醇化合物，共聚物和共聚物的制造方法
公开(公告)号：US20070161764A1
公开(公告)日：2007-07-12
申请号：US11713580
申请日：2007-03-01
申请人： Takanori Yamagishi , Takahito Mita
发明人： Takanori Yamagishi , Takahito Mita
IPC分类号： C08F2/00
CPC分类号： C08F2/38 , C07C323/12 , C07C323/17 , C07C2602/42 , G03F7/0046 , G03F7/0397 , G03F7/085
摘要： By resolving objections in the prior art, provided are a novel copolymer suitable as a coating polymers which is excellent in adhesion to a substrate and can be used suitably as the polymer for the coating film having durability against pattern collapse in the finer pattern formation for progressed lithography technology and a method for producing the copolymer, as well as a novel thiol compound useful as a chain transfer agent in the production of the copolymer. The novel thiol compound of the present invention has the structure represented by the formula (1); wherein R1 is a bivalent substituent selected from linear, branched or cyclic saturated hydrocarbon having 1 to 15 carbon atoms.
摘要翻译：通过解决现有技术中的异议，提供了适合作为与基材的粘合性优异的涂料聚合物的新型共聚物，并且可以适当地用作具有耐磨性的涂膜的聚合物，以在更精细的图案形成中具有耐图案塌陷光刻技术和共聚物的制造方法，以及在共聚物的制造中可用作链转移剂的新型硫醇化合物。本发明的新型硫醇化合物具有式（1）所示的结构。其中R 1是选自具有1至15个碳原子的直链，支链或环状饱和烃的二价取代基。

3. 发明授权

US07220808B2 Thiol compound, copolymer and method for producing the copolymer 有权
标题翻译：硫醇化合物，共聚物和共聚物的制造方法
公开(公告)号：US07220808B2
公开(公告)日：2007-05-22
申请号：US10784435
申请日：2004-02-23
申请人： Takanori Yamagishi , Takahito Mita
发明人： Takanori Yamagishi , Takahito Mita
IPC分类号： C08F2/38
CPC分类号： C08F2/38 , C07C323/12 , C07C323/17 , C07C2602/42 , G03F7/0046 , G03F7/0397 , G03F7/085
摘要： By resolving objections in the prior art, provided are a novel copolymer suitable as a coating polymers which is excellent in adhesion to a substrate and can be used suitably as the polymer for the coating film having durability against pattern collapse in the finer pattern formation for progressed lithography technology and a method for producing the copolymer, as well as a novel thiol compound useful as a chain transfer agent in the production of the copolymer. The novel thiol compound of the present invention has the structure represented by the formula (1); wherein R1 is a bivalent substituent selected from linear, branched or cyclic saturated hydrocarbon having 1 to 15 carbon atoms.
摘要翻译：通过解决现有技术中的异议，提供了适合作为与基材的粘合性优异的涂料聚合物的新型共聚物，并且可以适当地用作具有耐磨性的涂膜的聚合物，以在更精细的图案形成中具有耐图案塌陷光刻技术和共聚物的制造方法，以及在共聚物的制造中可用作链转移剂的新型硫醇化合物。本发明的新型硫醇化合物具有式（1）所示的结构。其中R 1是选自具有1至15个碳原子的直链，支链或环状饱和烃的二价取代基。

4. 发明授权

US07910282B2 Copolymer for semiconductor lithography and producing method thereof, and composition 有权
标题翻译：半导体光刻用共聚物及其制造方法及组成
公开(公告)号：US07910282B2
公开(公告)日：2011-03-22
申请号：US11587592
申请日：2005-04-28
申请人： Takanori Yamagishi , Takayoshi Okada , Satoshi Yamaguchi , Kiyomi Miki
发明人： Takanori Yamagishi , Takayoshi Okada , Satoshi Yamaguchi , Kiyomi Miki
IPC分类号： G03F7/004 , G03F7/30
CPC分类号： G03F7/0046 , G03F7/0392 , Y10S430/106 , Y10S430/111
摘要： In order to improve a resist pattern shape in a semiconductor lithography process, which is a factor largely affecting on a processing precision, an integration degree and yield, a copolymer for semiconductor lithography where a composition of a hydroxyl group-containing repeating unit in a low molecular weight region is controlled, and a method of producing the same are provided.According to the invention, in a copolymer for semiconductor lithography, which is obtained by copolymerizing a monomer having a hydroxyl group and a monomer having no hydroxyl group, when a copolymer of which composition of a hydroxyl group-containing repeating unit is controlled is used, the object can be achieved.
摘要翻译：为了提高半导体光刻工艺中的抗蚀剂图案形状，其是影响加工精度，整合度和收率的因素，用于半导体光刻的共聚物，其中含羟基的重复单元的组成低控制分子量区域，并提供其制造方法。根据本发明，在通过使具有羟基的单体和不具有羟基的单体共聚得到的半导体平版印刷用共聚物中，当使用含有羟基的重复单元的组成的共聚物时，该对象可以实现。

5. 发明授权

US07695889B2 Copolymer for semiconductor lithography and process for production thereof 失效
标题翻译：半导体光刻用共聚物及其制造方法
公开(公告)号：US07695889B2
公开(公告)日：2010-04-13
申请号：US11430738
申请日：2006-05-09
申请人： Takanori Yamagishi , Tomo Oikawa , Masaaki Muroi , Kota Atsuchi , Takahiro Nakamura , Masakazu Yamada , Kensuke Saisyo , Masaru Takeshita
发明人： Takanori Yamagishi , Tomo Oikawa , Masaaki Muroi , Kota Atsuchi , Takahiro Nakamura , Masakazu Yamada , Kensuke Saisyo , Masaru Takeshita
IPC分类号： G03F7/00 , G03F7/004 , C08F2/00
CPC分类号： G03F7/0397 , C08F220/18 , C08F220/28 , G03F7/0046
摘要： A copolymer for semiconductor lithography, comprising at least a recurring unit (A) having a carboxylic acid ester structure whose solubility in alkali increases by the action of an acid and a carboxyl group-containing recurring unit (B), which copolymer is obtained via a step (P) of (co)polymerizing at least a monomer giving a recurring unit (A) and a step (Q) of forming a recurring unit (B) in the co-presence of a recurring unit (A)-containing (co)polymer and/or a monomer giving a recurring unit (A), and an acid.The copolymer is used in production of semiconductor as a resist polymer which is small in roughness, little in development defect and superior in lithography properties such as DOF and the like.
摘要翻译：一种用于半导体光刻的共聚物，其至少包含具有羧酸酯结构的重复单元（A），其通过酸和含羧基的重复单元（B）的作用而在碱中的溶解度增加，该共聚物经由（共）聚合至少一种产生重复单元的单体（A）的步骤（P）和形成重复单元（B）的步骤（Q），在含有重复单元（A）的（共））聚合物和/或提供重复单元（A）的单体和酸。该共聚物用于生产半导体，作为抗蚀剂聚合物，其粗糙度小，显影缺陷少，并且光刻性能如DOF等优异。

6. 发明申请

US20100062371A1 Copolymer and composition for semiconductor lithography and process for producing the copolymer 有权
标题翻译：用于半导体光刻的共聚物和组合物以及用于制备共聚物的方法
公开(公告)号：US20100062371A1
公开(公告)日：2010-03-11
申请号：US12311993
申请日：2007-10-19
申请人： Tomo Oikawa , Takayoshi Okada , Masaaki Kudo , Takanori Yamagishi
发明人： Tomo Oikawa , Takayoshi Okada , Masaaki Kudo , Takanori Yamagishi
IPC分类号： G03F7/004 , C08G63/08
CPC分类号： G03F7/0397 , C08F220/18 , C08F220/28 , C08F2220/283 , G03F7/2041
摘要： [Task to be Achieved] To provide a chemically amplified type positive copolymer for semiconductor lithography, which has eliminated the problems of prior art, has a high development contrast, and has excellent resolution in fine-pattern formation; a composition for semiconductor lithography which contains the copolymer; and a process for producing the copolymer.[Means for Achievement] The copolymer for semiconductor lithography according to the present invention is a copolymer which has at least (A) a repeating unit having a structure which has an alkali-soluble group protected by an acid-labile, dissolution-suppressing group, (B) a repeating group having a lactone structure and (C) a repeating group having an alcoholic hydroxyl group and which is characterized by having an acid value of 0.01 mmol/g or less as determined by dissolving the copolymer in a solvent and subjecting the solution to neutralization titration with a solution of an alkali metal hydroxide using Bromothymol Blue as an indicator.
摘要翻译： [要实现的目的]为了提供消除现有技术问题的化学放大型半导体光刻用正共聚物，具有高显影对比度，并且在精细图案形成中具有优异的分辨率; 含有共聚物的半导体光刻用组合物; 和共聚物的制造方法。 [实现方法]本发明的半导体光刻用共聚物是至少具有（A）具有由酸不稳定，溶解抑制基团保护的碱溶性基团的结构的重复单元的共聚物，（B）具有内酯结构的重复基团和（C）具有醇羟基的重复基团，其特征在于通过将共聚物溶解在溶剂中而使酸值为0.01mmol / g以下，使用溴百里酚蓝作为指示剂的碱金属氢氧化物溶液中和滴定溶液。

7. 发明申请

US20070269741A1 Copolymer for positive type lithography, polymerization initiator used in production of said copolymer, and composition for semiconductor lithography 有权
标题翻译：用于正型光刻的共聚物，用于制备所述共聚物的聚合引发剂和用于半导体光刻的组合物
公开(公告)号：US20070269741A1
公开(公告)日：2007-11-22
申请号：US11800295
申请日：2007-05-04
申请人： Minoru Iijima , Takanori Yamagishi
发明人： Minoru Iijima , Takanori Yamagishi
IPC分类号： G03C1/00
CPC分类号： G03F7/0397 , C08F220/28
摘要： A copolymer for positive type lithography, having at least a recurring unit (A) having a structure wherein an alkali-soluble group is protected by an acid-dissociating, dissolution-suppressing group, represented by the following formula (A) [in the formula (A), R10 is a hydrogen atom or a hydrocarbon group which may be substituted by fluorine atom; R11 is a crosslinked, alicyclic hydrocarbon group; n is an integer of 0 or 1; and R12 is an acid-dissociating, dissolution-suppressing group], and a terminal structure (B) having a structure wherein an alkali-soluble group is protected by an acid-dissociating, dissolution-suppressing group, represented by the following formula (B) [in the formula (B), R21 is a hydrocarbon group which may contain nitrogen atom; R22 is an acid-dissociating, dissolution-suppressing group; and p is a site of bonding with copolymer main chain].The copolymer is used in chemically amplified positive type lithography and is superior in lithography properties (e.g. dissolution contrast).
摘要翻译：一种正型平版印刷用共聚物，其至少具有具有下式（A）表示的酸溶解抑制基团的碱溶性基团保护的结构的重复单元（A）[式（A）中，R 10是氢原子或可被氟原子取代的烃基; R 11是交联的脂环族烃基; n为0或1的整数; 并且R 12是酸解离的溶解抑制基团]和具有其中碱溶性基团被酸解离的溶解抑制基团保护的结构的末端结构（B）由下式（B）表示[式（B）中，R 21是可以含有氮原子的烃基， R 22是酸解离的溶解抑制基团; 和p是与共聚物主链键合的位点]。该共聚物用于化学放大正型光刻中，并且在光刻性能（例如溶出对比度）方面是优异的。

8. 发明申请

US20050131184A1 Preparation process of copolymer for semiconductor lithography and a copolymer for semiconductor lithography available by this process 有权
标题翻译：用于半导体光刻的共聚物的制备方法和通过该方法可获得的用于半导体光刻的共聚物
公开(公告)号：US20050131184A1
公开(公告)日：2005-06-16
申请号：US11005914
申请日：2004-12-06
申请人： Takanori Yamagishi , Kazuhiko Mizuno , Tomo Oikawa , Ichiro Kato
发明人： Takanori Yamagishi , Kazuhiko Mizuno , Tomo Oikawa , Ichiro Kato
IPC分类号： G03F7/033 , C08F2/06 , C08F2/38 , C08F2/40 , C08F118/02 , C08F220/18 , G03F7/039 , H01L21/027
CPC分类号： G03F7/0397
摘要： Provided are a preparation process of a copolymer for semiconductor lithography, suited for a film forming composition used for the formation of minute patterns necessary for semiconductor fabrication, which comprises carrying out radical polymerization of at least two monomers having an ethylenic double bond in the presence of a polymerization initiator in a polymerization solvent, while causing to exist, in the solution containing the monomers, a polymerization inhibitive component; and a copolymer for semiconductor lithography prepared by the above-described process, and contains no high polymer, has excellent storage stability and generates remarkably less defects in resist pattern when used for semiconductor lithography.
摘要翻译：提供一种半导体光刻用共聚物的制备方法，适用于形成半导体制造所需的微小图案的成膜组合物，其包括在存在下进行至少两种具有烯键式双键的单体的自由基聚合聚合引发剂在聚合溶剂中，同时存在于含有单体的溶液中的聚合抑制成分; 和通过上述方法制备的半导体光刻用共聚物，不含高分子聚合物，具有优异的保存稳定性，并且在用于半导体光刻时产生抗蚀剂图案的显着较少的缺陷。

9. 发明授权

US08859180B2 Copolymer and composition for semiconductor lithography and process for producing the copolymer 有权
标题翻译：用于半导体光刻的共聚物和组合物以及用于制备共聚物的方法
公开(公告)号：US08859180B2
公开(公告)日：2014-10-14
申请号：US12311993
申请日：2007-10-19
申请人： Tomo Oikawa , Takayoshi Okada , Masaaki Kudo , Takanori Yamagishi
发明人： Tomo Oikawa , Takayoshi Okada , Masaaki Kudo , Takanori Yamagishi
IPC分类号： G03F7/039 , C08F2/06 , C08F224/00 , C08F220/18 , C08F216/38
CPC分类号： G03F7/0397 , C08F220/18 , C08F220/28 , C08F2220/283 , G03F7/2041
摘要： [Task to Be Achieved]To provide a chemically amplified type positive copolymer for semiconductor lithography, which has eliminated the problems of prior art, has a high development contrast, and has excellent resolution in fine-pattern formation; a composition for semiconductor lithography which contains the copolymer; and a process for producing the copolymer.[Means for Achievement]The copolymer for semiconductor lithography according to the present invention is a copolymer which has at least (A) a repeating unit having a structure which has an alkali-soluble group protected by an acid-labile, dissolution-suppressing group, (B) a repeating group having a lactone structure and (C) a repeating group having an alcoholic hydroxyl group and which is characterized by having an acid value of 0.01 mmol/g or less as determined by dissolving the copolymer in a solvent and subjecting the solution to neutralization titration with a solution of an alkali metal hydroxide using Bromothymol Blue as an indicator.
摘要翻译： [要实现的任务]为了提供半导体光刻的化学放大型正共聚物，其消除了现有技术的问题，具有高显影对比度，并且在精细图案形成中具有优异的分辨率; 含有共聚物的半导体光刻用组合物; 和共聚物的制造方法。 [实现方法]本发明的半导体光刻用共聚物是至少具有（A）具有由酸不稳定，溶解抑制基团保护的碱溶性基团的结构的重复单元的共聚物，（B）具有内酯结构的重复基团和（C）具有醇羟基的重复基团，其特征在于通过将共聚物溶解在溶剂中而使酸值为0.01mmol / g以下，使用溴百里酚蓝作为指示剂的碱金属氢氧化物溶液中和滴定溶液。

10. 发明授权

US08709698B2 Copolymer for positive type lithography, polymerization initiator used in production of said copolymer, and composition for semiconductor lithography 有权
标题翻译：用于正型光刻的共聚物，用于制备所述共聚物的聚合引发剂和用于半导体光刻的组合物
公开(公告)号：US08709698B2
公开(公告)日：2014-04-29
申请号：US13199907
申请日：2011-09-12
申请人： Minoru Iijima , Takanori Yamagishi
发明人： Minoru Iijima , Takanori Yamagishi
IPC分类号： G03F7/00 , C09B31/16
CPC分类号： G03F7/0397 , C08F220/28
摘要： A radical polymerization initiator represented by the following formula (G) in the formula (G), R71 and R72 are each a hydrocarbon group of 3 to 6 carbon atoms which may contain nitrogen atom; R73 and R74 are each a hydrogen atom or an acid-dissociating, dissolution-suppressing group; and at least one of R73 and R74 is an acid-dissociating, dissolution-suppressing group represented by the following formula (R78); and wherein R77 is a hydrocarbon group of 1 to 26 carbon atoms which may contain hetero atoms.
摘要翻译：由式（G）中的下式（G）表示的自由基聚合引发剂R71和R72各自为可含有氮原子的3〜6个碳原子的烃基; R73和R74各自为氢原子或酸解离溶解抑制基团; R73和R74中的至少一个为下式（R78）表示的酸解离溶解抑制基团。并且其中R 77是可含有杂原子的1至26个碳原子的烃基。

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