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1. 发明申请

US20090123868A1 Resist polymer and method for producing the polymer 有权
标题翻译：抗蚀聚合物和聚合物的制造方法
公开(公告)号：US20090123868A1
公开(公告)日：2009-05-14
申请号：US12319492
申请日：2009-01-08
申请人： Takanori Yamagishi , Tomo Oikawa , Ichiro Kato , Kazuhiko Mizuno , Satoshi Yamaguchi
发明人： Takanori Yamagishi , Tomo Oikawa , Ichiro Kato , Kazuhiko Mizuno , Satoshi Yamaguchi
IPC分类号： G03C1/492
CPC分类号： G03F7/085 , G03F7/0397
摘要： Solving problems in the prior art, provided are a resist polymer which is small in lot-to-lot, reactor-to-reactor and scale-to-scale variations, and contains no high polymer, is excellent in solubility and storage stability, and is suitable for fine pattern formation, and a method for production thereof. The present invention provides the resist polymer at least having a repeating unit having a structure which is decomposed by an acid to become soluble in an alkali developer and a repeating unit having a polar group to enhance adhesion to a substrate, characterized in that a peak area of a high molecular weight component (high polymer) with molecular weight of 100,000 or more is 0.1% or less based on an entire peak area in a molecular weight distribution determined, by gel permeation chromatography (GPC).
摘要翻译：解决现有技术中的问题，提供了一种抗批聚物，反应堆对反应器和尺度尺度变化小的抗蚀剂聚合物，不含高聚物，溶解性和储存稳定性优异，适用于精细图案形成及其制造方法。本发明提供的抗蚀剂聚合物至少具有由酸分解成可溶于碱性显影剂的结构的重复单元和具有极性基团的重复单元以增强与基材的粘附性，其特征在于峰面积的分子量为100,000以上的高分子量成分（高分子量）为0.1％以下，通过凝胶渗透色谱法（GPC）测定的分子量分布中的全部峰面积。

2. 发明申请

US20050287474A1 Resist polymer and method for producing the polymer 审中-公开
标题翻译：抗蚀聚合物和聚合物的制造方法
公开(公告)号：US20050287474A1
公开(公告)日：2005-12-29
申请号：US11203256
申请日：2005-08-12
申请人： Takanori Yamagishi , Tomo Oikawa , Ichiro Kato , Kazuhiko Mizuno , Satoshi Yamaguchi
发明人： Takanori Yamagishi , Tomo Oikawa , Ichiro Kato , Kazuhiko Mizuno , Satoshi Yamaguchi
IPC分类号： G03F7/004 , C08F2/00 , G03F7/039 , G03F7/085 , G03C1/492
CPC分类号： G03F7/085 , G03F7/0397
摘要： Solving problems in the prior art, provided are a resist polymer which is small in lot-to-lot, reactor-to-reactor and scale-to-scale variations, and contains no high polymer, is excellent in solubility and storage stability, and is suitable for fine pattern formation, and a method for production thereof. The present invention provides the resist polymer at least having a repeating unit having a structure which is decomposed by an acid to become soluble in an alkali developer and a repeating unit having a polar group to enhance adhesion to a substrate, characterized in that a peak area of a high molecular weight component (high polymer) with molecular weight of 100,000 or more is 0.1% or less based on an entire peak area in a molecular weight distribution determined by gel permeation chromatography (GPC).
摘要翻译：解决现有技术中的问题，提供了一种抗批聚物，反应堆对反应器和尺度尺度变化小的抗蚀剂聚合物，不含高聚物，溶解性和储存稳定性优异，适用于精细图案形成及其制造方法。本发明提供的抗蚀剂聚合物至少具有由酸分解成可溶于碱性显影剂的结构的重复单元和具有极性基团的重复单元以增强与基材的粘附性，其特征在于峰面积的分子量为100,000以上的高分子量成分（高分子量）为0.1％以下，通过凝胶渗透色谱法（GPC）测定的分子量分布中的全部峰面积。

3. 发明授权

US08163852B2 Resist polymer and method for producing the polymer 有权
标题翻译：抗蚀聚合物和聚合物的制造方法
公开(公告)号：US08163852B2
公开(公告)日：2012-04-24
申请号：US12319492
申请日：2009-01-08
申请人： Takanori Yamagishi , Tomo Oikawa , Ichiro Kato , Kazuhiko Mizuno , Satoshi Yamaguchi
发明人： Takanori Yamagishi , Tomo Oikawa , Ichiro Kato , Kazuhiko Mizuno , Satoshi Yamaguchi
IPC分类号： C08F2/00
CPC分类号： G03F7/085 , G03F7/0397
摘要： Solving problems in the prior art, provided are a resist polymer which is small in lot-to-lot, reactor-to-reactor and scale-to-scale variations, and contains no high polymer, is excellent in solubility and storage stability, and is suitable for fine pattern formation, and a method for production thereof. The present invention provides the resist polymer at least having a repeating unit having a structure which is decomposed by an acid to become soluble in an alkali developer and a repeating unit having a polar group to enhance adhesion to a substrate, characterized in that a peak area of a high molecular weight component (high polymer) with molecular weight of 100,000 or more is 0.1% or less based on an entire peak area in a molecular weight distribution determined, by gel permeation chromatography (GPC).
摘要翻译：解决现有技术中的问题，提供了一种抗批聚物，反应堆对反应器和尺度尺度变化小的抗蚀剂聚合物，不含高聚物，溶解性和储存稳定性优异，适用于精细图案形成及其制造方法。本发明提供的抗蚀剂聚合物至少具有由酸分解成可溶于碱性显影剂的结构的重复单元和具有极性基团的重复单元以增强与基材的粘附性，其特征在于峰面积的分子量为100,000以上的高分子量成分（高分子量）为0.1％以下，通过凝胶渗透色谱法（GPC）测定的分子量分布中的全部峰面积。

4. 发明授权

US07045582B2 Preparation process of copolymer for semiconductor lithography and a copolymer for semiconductor lithography available by this process 有权
标题翻译：用于半导体光刻的共聚物的制备方法和通过该方法可获得的用于半导体光刻的共聚物
公开(公告)号：US07045582B2
公开(公告)日：2006-05-16
申请号：US11005914
申请日：2004-12-06
申请人： Takanori Yamagishi , Kazuhiko Mizuno , Tomo Oikawa , Ichiro Kato
发明人： Takanori Yamagishi , Kazuhiko Mizuno , Tomo Oikawa , Ichiro Kato
IPC分类号： C08F2/38
CPC分类号： G03F7/0397
摘要： Provided are a preparation process of a copolymer for semiconductor lithography, suited for a film forming composition used for the formation of minute patterns necessary for semiconductor fabrication, which comprises carrying out radical polymerization of at least two monomers having an ethylenic double bond in the presence of a polymerization initiator in a polymerization solvent, while causing to exist, in the solution containing the monomers, a polymerization inhibitive component; and a copolymer for semiconductor lithography prepared by the above-described process, and contains no high polymer, has excellent storage stability and generates remarkably less defects in resist pattern when used for semiconductor lithography.
摘要翻译：提供一种半导体光刻用共聚物的制备方法，适用于形成半导体制造所需的微小图案的成膜组合物，其包括在存在下进行至少两种具有烯键式双键的单体的自由基聚合聚合引发剂在聚合溶剂中，同时存在于含有单体的溶液中的聚合抑制成分; 和通过上述方法制备的半导体光刻用共聚物，不含高分子聚合物，具有优异的保存稳定性，并且在用于半导体光刻时产生抗蚀剂图案的显着较少的缺陷。

5. 发明申请

US20050131184A1 Preparation process of copolymer for semiconductor lithography and a copolymer for semiconductor lithography available by this process 有权
标题翻译：用于半导体光刻的共聚物的制备方法和通过该方法可获得的用于半导体光刻的共聚物
公开(公告)号：US20050131184A1
公开(公告)日：2005-06-16
申请号：US11005914
申请日：2004-12-06
申请人： Takanori Yamagishi , Kazuhiko Mizuno , Tomo Oikawa , Ichiro Kato
发明人： Takanori Yamagishi , Kazuhiko Mizuno , Tomo Oikawa , Ichiro Kato
IPC分类号： G03F7/033 , C08F2/06 , C08F2/38 , C08F2/40 , C08F118/02 , C08F220/18 , G03F7/039 , H01L21/027
CPC分类号： G03F7/0397
摘要： Provided are a preparation process of a copolymer for semiconductor lithography, suited for a film forming composition used for the formation of minute patterns necessary for semiconductor fabrication, which comprises carrying out radical polymerization of at least two monomers having an ethylenic double bond in the presence of a polymerization initiator in a polymerization solvent, while causing to exist, in the solution containing the monomers, a polymerization inhibitive component; and a copolymer for semiconductor lithography prepared by the above-described process, and contains no high polymer, has excellent storage stability and generates remarkably less defects in resist pattern when used for semiconductor lithography.
摘要翻译：提供一种半导体光刻用共聚物的制备方法，适用于形成半导体制造所需的微小图案的成膜组合物，其包括在存在下进行至少两种具有烯键式双键的单体的自由基聚合聚合引发剂在聚合溶剂中，同时存在于含有单体的溶液中的聚合抑制成分; 和通过上述方法制备的半导体光刻用共聚物，不含高分子聚合物，具有优异的保存稳定性，并且在用于半导体光刻时产生抗蚀剂图案的显着较少的缺陷。

6. 发明申请

US20060058433A1 Method for prevention of increase in particles in copolymer for semiconductor resist 有权
标题翻译：用于防止半导体抗蚀剂共聚物中颗粒增加的方法
公开(公告)号：US20060058433A1
公开(公告)日：2006-03-16
申请号：US11224510
申请日：2005-09-12
申请人： Takanori Yamagishi , Kazuhiko Mizuno
发明人： Takanori Yamagishi , Kazuhiko Mizuno
IPC分类号： C08C1/14
CPC分类号： C08F6/003 , G03F7/0392 , G03F7/0397 , G03F7/16
摘要： A method for prevention of increase in particles in copolymer for semiconductor resist, which comprises passing, through a filter containing a resin having an amino group and/or an amide bond, a copolymer solution for semiconductor resist which contains a copolymer for semiconductor resist having a polar group-containing recurring unit and an alicyclic structure-containing recurring unit and which contains no ionic additive. With the method, there can be obtained a copolymer for semiconductor resist, which can be suitably used in a resist film used for formation of a fine pattern in semiconductor production and which is very low in formation of particles during storage and accordingly generates substantially no defect after development.
摘要翻译：一种用于防止半导体抗蚀剂共聚物中颗粒增加的方法，其包括使含有具有氨基和/或酰胺键的树脂的过滤器通过含有半导体抗蚀剂的共聚物溶液，该共聚物溶液含有具有含极性基团的重复单元和含脂环结构的重复单元，并且不含离子添加剂。通过该方法，可以得到半导体抗蚀剂用共聚物，其可以适用于半导体制造中形成微细图案的抗蚀剂膜，并且在保存时形成微粒非常少，因此基本上不产生缺陷后发展。

7. 发明授权

US07342087B2 Method for prevention of increase in particles in copolymer for semiconductor resist 有权
标题翻译：用于防止半导体抗蚀剂共聚物中颗粒增加的方法
公开(公告)号：US07342087B2
公开(公告)日：2008-03-11
申请号：US11224510
申请日：2005-09-12
申请人： Takanori Yamagishi , Kazuhiko Mizuno
发明人： Takanori Yamagishi , Kazuhiko Mizuno
IPC分类号： C08F6/00
CPC分类号： C08F6/003 , G03F7/0392 , G03F7/0397 , G03F7/16
摘要： A method for prevention of increase in particles in copolymer for semiconductor resist, which comprises passing, through a filter containing a resin having an amino group and/or an amide bond a copolymer solution for semiconductor resist which contains a copolymer for semiconductor resist having a polar group-containing recurring unit and an alicyclic structure-containing recurring unit and which contains no ionic additive. With the method, there can be obtained a copolymer semiconductor resist, which can be suitably used in a resist film used for formation of a fine pattern in semiconductor production and which is very low in formation of particle s during storage and accordingly generates substantially no defect after development.
摘要翻译：一种用于防止半导体抗蚀剂共聚物中颗粒增加的方法，其包括使包含具有氨基和/或酰胺键的树脂的过滤器通过半导体抗蚀剂共聚物溶液，该共聚物溶液含有具有极性的半导体抗蚀剂的共聚物含有重复单元和含脂环结构的重复单元，并且不含离子添加剂。通过该方法，可以获得共聚物半导体抗蚀剂，其可以适用于用于在半导体制造中形成精细图案的抗蚀剂膜，并且其在保存期间形成颗粒非常低，因此基本上不产生缺陷后发展。

8. 发明授权

US09268146B2 User interface with a composite image that floats 有权
标题翻译：具有浮动的合成图像的用户界面
公开(公告)号：US09268146B2
公开(公告)日：2016-02-23
申请号：US13255532
申请日：2010-03-09
申请人： Masaru Iwasawa , Kazuhiko Mizuno , Robert L. W. Smithson , Richard L. Rylander
发明人： Masaru Iwasawa , Kazuhiko Mizuno , Robert L. W. Smithson , Richard L. Rylander
IPC分类号： G02B27/10 , G02B27/22 , G02B27/01 , G06F3/01 , G02B13/14 , G01J5/20
CPC分类号： G02B27/2214 , G01J5/20 , G02B13/14 , G02B27/2292 , G02B2027/014 , G06F3/011 , G06F3/016
摘要： User interface having a sensor and a composite interface that floats. Embodiments of user interfaces described herein are useful, for example, as automobile components (e.g., dashboard components), appliance components (e.g., dishwasher components, stove components, oven components, microwave oven components, clothes washer components, and clothes dyer components), medical equipment, elevator buttons, laboratory equipment (e.g., scales), as well as consumer electronics (e.g., entertainment devices and cell phones), automatic teller machines, and the like.
摘要翻译：用户界面具有传感器和浮动的复合接口。本文描述的用户界面的实施例例如作为汽车部件（例如，仪表板部件），器具部件（例如，洗碗机部件，炉部件，烤箱部件，微波炉部件，洗衣机部件和衣服染色部件）是有用的，医疗设备，电梯按钮，实验室设备（例如秤）以及消费电子产品（例如娱乐设备和手机），自动柜员机等。

9. 发明授权

US07860824B2 System and method of disaster recovery 有权
标题翻译：灾难恢复系统和方法
公开(公告)号：US07860824B2
公开(公告)日：2010-12-28
申请号：US11802186
申请日：2007-05-21
申请人： Yoshio Suzuki , Nobuo Kawamura , Shinji Fujiwara , Satoru Watanabe , Kazuhiko Mizuno
发明人： Yoshio Suzuki , Nobuo Kawamura , Shinji Fujiwara , Satoru Watanabe , Kazuhiko Mizuno
IPC分类号： G06F7/00
CPC分类号： G06F11/2082 , G06F11/2074 , G06F17/30368 , G06F2201/855
摘要： In a DR system, from the viewpoint of device cost, when search is not carried out, a physical application where log recovery is available by inexpensive DB appliance server is adopted. Further, a local mirror operation at a secondary site is not carried out. Furthermore, from the viewpoint of operation, by a log apply function unit, the tendencies of a log application and operations are monitored, and a search process is accepted according to the progress conditions of the log application. When the log application does not catch up sufficiently, the search is not accepted. Moreover, when a consistency guarantee of a secondary DB is made, not transactions in process at the moment of search instruction are undone (rolled back), but only transactions in process at the moment of a search instruction are redone (rolled forward).
摘要翻译：在DR系统中，从设备成本的观点来看，当不进行搜索时，采用廉价DB设备服务器可以进行日志恢复的物理应用。此外，不执行次要站点处的本地镜像操作。此外，从操作的观点来看，通过日志应用功能单元，监视日志应用和操作的倾向，并且根据日志应用的进度条件接受搜索处理。当日志应用程序没有足够的赶上时，搜索不被接受。此外，当辅助DB的一致性保证被做出时，不是在搜索指令的时刻处理的事务被撤销（回滚），而是仅仅在搜索指令的时刻重新进行正在进行的事务。

10. 发明申请

US20100298573A1 FLUORESCENT AGENT HAVING ETHYNYL GROUP 有权
标题翻译：具有乙烯基团的荧光剂
公开(公告)号：US20100298573A1
公开(公告)日：2010-11-25
申请号：US12864313
申请日：2009-01-19
申请人： Kazuhiko Mizuno , Hideyuki Takagaki , Hirokazu Iwahashi , Kaname Inoue
发明人： Kazuhiko Mizuno , Hideyuki Takagaki , Hirokazu Iwahashi , Kaname Inoue
IPC分类号： C07F7/10 , C07F7/08 , C07D311/08 , C07D407/02
CPC分类号： C07D231/06 , C07D311/18 , C07D311/20 , C07D405/04
摘要： There are provided novel fluorescent agents, such as pyrazoline compounds represented by formula (I): (wherein R1, R2 and R3 are as defined in the specification), having an ethynyl group in the molecule, which have high absorptivity in the ultraviolet-visible short wavelength range (for example, 350 nm-420 nm).
摘要翻译：提供了新颖的荧光剂，如式（I）表示的吡唑啉化合物：其中R1，R2和R3如本说明书中所定义），在分子中具有乙炔基，在紫外可见光中具有高吸收性短波长范围（例如，350nm-420nm）。

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