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1. 发明授权

US08486605B2 Positive resist composition and method of forming resist pattern 有权
标题翻译：正型抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US08486605B2
公开(公告)日：2013-07-16
申请号：US12691561
申请日：2010-01-21
申请人： Masaru Takeshita , Yasuhiro Yoshii , Jiro Yokoya , Hirokuni Saito , Tsuyoshi Nakamura
发明人： Masaru Takeshita , Yasuhiro Yoshii , Jiro Yokoya , Hirokuni Saito , Tsuyoshi Nakamura
IPC分类号： G03F7/039 , G03F7/095 , G03F7/20 , G03F7/30
CPC分类号： G03F7/0397 , G03F7/0035 , G03F7/0045 , G03F7/0048
摘要： A positive resist composition including: a base material component (A) which exhibits increased solubility in an alkali developing solution under the action of acid; and an acid generator component (B) which generates acid upon exposure; dissolved in an organic solvent (S), wherein the base material component (A) includes a resin component (A1) having 4 types of specific structural units, and the organic solvent (S) includes from 60 to 99% by weight of an alcohol-based organic solvent (S1) and from 1 to 40% by weight of at least one organic solvent (S2) selected from the group consisting of propylene glycol monomethyl ether acetate, propylene glycol monomethyl ether and cyclohexanone.
摘要翻译：一种正型抗蚀剂组合物，包括：在酸性作用下在碱性显影液中表现出增加的溶解度的基材成分（A）和在曝光时产生酸的酸产生剂组分（B）; 溶解在有机溶剂（S）中，其中，所述基材成分（A）含有具有4种特定结构单元的树脂成分（A1），所述有机溶剂（S）含有60〜99重量％的醇的有机溶剂（S1）和1至40重量％的至少一种选自丙二醇单甲醚乙酸酯，丙二醇单甲醚和环己酮的有机溶剂（S2）。

2. 发明授权

US08247161B2 Resist composition for immersion exposure, method of forming resist pattern, and fluorine-containing resin 有权
标题翻译：用于浸渍曝光的抗蚀剂组合物，抗蚀剂图案形成方法和含氟树脂
公开(公告)号：US08247161B2
公开(公告)日：2012-08-21
申请号：US12588117
申请日：2009-10-05
申请人： Masaru Takeshita , Yasuhiro Yoshii
发明人： Masaru Takeshita , Yasuhiro Yoshii
IPC分类号： G03F7/039 , G03F7/038 , G03F7/20 , G03F7/30
CPC分类号： G03F7/2041 , C08F220/18 , C08F220/22 , C08F220/28 , G03F7/0046 , G03F7/0382 , G03F7/0397
摘要： A resist composition for immersion exposure including: a base component (A) which exhibits changed solubility in an alkali developing solution under the action of acid; an acid-generator component (B) which generates acid upon exposure; and a fluorine-containing resin component (F); dissolved in an organic solvent (S), the fluorine-containing resin component (F) including a structural unit (f1) containing a fluorine atom, a structural unit (f2) containing a hydrophilic group-containing aliphatic hydrocarbon group, and a structural unit (f3) derived from an acrylate ester containing a tertiary alkyl group-containing group or an alkoxyalkyl group.
摘要翻译：一种用于浸渍曝光的抗蚀剂组合物，包括：在酸性作用下在碱性显影液中表现出改变的溶解度的碱成分（A）暴露时产生酸的酸发生剂组分（B）; 和含氟树脂组分（F）; 溶解在有机溶剂（S）中的含有含有氟原子的结构单元（f1）的含氟树脂成分（F），含有亲水性基团的脂肪族烃基的结构单元（f2）和结构单元（f3）衍生自含有含叔烷基的基团或烷氧基烷基的丙烯酸酯。

3. 发明申请

US20120183899A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN 有权
标题翻译：耐蚀组合物和形成耐力图案的方法
公开(公告)号：US20120183899A1
公开(公告)日：2012-07-19
申请号：US13346166
申请日：2012-01-09
申请人： Masaru Takeshita , Hirokuni Saito , Jiro Yokoya , Tsuyoshi Nakamura
发明人： Masaru Takeshita , Hirokuni Saito , Jiro Yokoya , Tsuyoshi Nakamura
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： G03F7/0048 , G03F7/0397 , G03F7/2041
摘要： A resist composition containing a base component (A) which exhibits changed solubility in a developing solution under the action of acid, and an acid generator component (B) which generates acid upon exposure, dissolved in an organic solvent (S) which contains an alcohol-based solvent, wherein the base component (A) contains a copolymer (A1) that exhibits increased polarity under the action of acid, and the copolymer (A1) is a copolymer in which a structural unit (a2), which is derived from an acrylate ester in which the hydrogen atom bonded to the carbon atom on the α-position may be substituted with a substituent, and includes a lactone-containing cyclic group, is dispersed uniformly within the copolymer molecule.
摘要翻译：一种抗蚀剂组合物，其含有在酸的作用下在显影液中显示出改变的溶解性的基础成分（A）和曝露后产生酸的酸产生剂成分（B），溶解在含有醇的有机溶剂（S）的基础成分（A）含有在酸的作用下显示出极性增加的共聚物（A1），共聚物（A1）是共聚物，其中结构单元（a2）衍生自丙烯酸酯，其中与α-位上的碳原子键合的氢原子可以被取代基取代，并且包括含内酯的环状基团，均匀地分散在共聚物分子内。

4. 发明申请

US20110008728A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN 审中-公开
标题翻译：耐蚀组合物和形成耐力图案的方法
公开(公告)号：US20110008728A1
公开(公告)日：2011-01-13
申请号：US12788160
申请日：2010-05-26
申请人： Tsuyoshi NAKAMURA , Masaru TAKESHITA , Jiro YOKOYA , Hideo HADA , Kensuke MATSUZAWA , Kazushige DOHTANI
发明人： Tsuyoshi NAKAMURA , Masaru TAKESHITA , Jiro YOKOYA , Hideo HADA , Kensuke MATSUZAWA , Kazushige DOHTANI
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： G03F7/0045 , C07C303/32 , C07C309/04 , C07C309/06 , C07C309/12 , C07C309/19 , C08F220/18 , C08F220/24 , C08F2220/281 , C08F2220/285 , G03F7/0035 , G03F7/0046 , G03F7/0048 , G03F7/0397 , G03F7/2041 , C08F220/28
摘要： A resist composition including: a base component which exhibits changed solubility in an alkali developing solution under the action of acid; and an acid-generator component containing an acid generator (B1) consisting of a compound represented by general formula (b1); dissolved in an organic solvent containing an alcohol-based organic solvent having a boiling point of at least 150° C., wherein R7″ to R9″ represents an aryl group or an alkyl group, provided that at least one of R7″ to R9″ represents a substituted aryl group which has been substituted with a group represented by the formula: —O—R70 (R70 represents an organic group), and two of R7″ to R9″ may be mutually bonded to form a ring with the sulfur atom; X represents a hydrocarbon group of 3 to 30 carbon atoms; Q1 represents a divalent linking group containing an oxygen atom; and Y1 represents an alkylene group of 1 to 4 carbon atoms or a fluorinated alkylene group of 1 to 4 carbon atoms.
摘要翻译：一种抗蚀剂组合物，其包含：在酸的作用下在碱性显影液中显示出改变的溶解度的碱成分; 以及含有由通式（b1）表示的化合物构成的酸发生剂（B1）的酸发生剂成分。溶解在含有沸点至少为150℃的醇类有机溶剂的有机溶剂中，其中R7“至R9”表示芳基或烷基，条件是R7“至R9”中的至少一个表示被由下式表示的基团取代的取代的芳基：-R-70（R70表示有机基团），并且R7“至R9”中的两个可以相互键合形成具有硫原子的环; X表示3〜30个碳原子的烃基; Q1表示含有氧原子的二价连接基团; Y1表示碳原子数为1〜4的亚烷基或碳原子数1〜4的氟化亚烷基。

5. 发明申请

US20100248133A1 POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN 有权
标题翻译：正电阻组合物和形成电阻图案的方法
公开(公告)号：US20100248133A1
公开(公告)日：2010-09-30
申请号：US12303944
申请日：2007-05-18
申请人： Masaru Takeshita
发明人： Masaru Takeshita
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： G03F7/0397 , G03F7/0045 , Y10S430/111
摘要： A positive resist composition including a resin component (A) which exhibits increased alkali solubility under action of acid and an acid-generator component (B) which generates acid upon exposure, the resin component (A) including: a polymer (A1) including a structural unit (a0) represented by general formula (a0) shown below and no structural unit (a1) derived from an acrylate ester containing an acetal-type acid dissociable, dissolution inhibiting group, exclusive of the structural unit (a0), and a polymer (A2) including the structural unit (a1) and no structural unit (a0).
摘要翻译：一种正型抗蚀剂组合物，其包含在酸作用下表现出增加的碱溶性的树脂组分（A）和暴露时产生酸的酸产生剂组分（B），所述树脂组分（A）包括：包含由下述通式（a0）表示的结构单元（a0），不包含不含结构单元（a0）的含有缩醛型酸解离性的溶解抑制基团的丙烯酸酯衍生物的结构单元（a1）（A2），包括结构单元（a1）和结构单元（a0）。

6. 发明授权

US07776511B2 Positive resist composition and method of forming resist pattern 有权
标题翻译：正型抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US07776511B2
公开(公告)日：2010-08-17
申请号：US12299523
申请日：2007-05-18
申请人： Masaru Takeshita , Ryoji Watanabe
发明人： Masaru Takeshita , Ryoji Watanabe
IPC分类号： G03F7/004 , G03F7/30
CPC分类号： G03F7/0397 , G03F7/0045 , Y10S430/111
摘要： A positive resist composition including a resin component (A) which exhibits increased alkali solubility under action of acid and an acid-generator component (B) which generates acid upon exposure, the resin component (A) including a structural unit (a0-1) represented by general formula (a0-1) shown below and a structural unit (a0-2) represented by general formula (a0-2) shown below: wherein: R represents a hydrogen atom, a halogen atom, a lower alkyl group or a halogenated lower alkyl group; each of Y1 and Y3 independently represents an aliphatic cyclic group; Z represents a tertiary alkyl group-containing group or an alkoxyalkyl group; a represents an integer of 1 to 3, and b represents an integer of 0 to 2, such that a+b=1 to 3; each of c, d and e independently represents an integer of 0 to 3; each of g and h independently represents an integer of 0 to 3; and i represents an integer of 1 to 3.
摘要翻译：包含在酸作用下表现出增加的碱溶性的树脂组分（A）和暴露时产生酸的酸产生剂组分（B）的正型抗蚀剂组合物，包括结构单元（a0-1）的树脂组分（A）由下述通式（a0-1）表示的结构单元（a0-2）和下述通式（a0-2）表示的结构单元（a0-2）表示：其中：R表示氢原子，卤素原子，低级烷基或卤代低级烷基; Y 1和Y 3各自独立地表示脂族环基; Z表示含叔烷基的基团或烷氧基烷基; a表示1〜3的整数，b表示0〜2的整数，a + b = 1〜3。 c，d和e各自独立地表示0〜3的整数， g和h各自独立地表示0〜3的整数， i表示1〜3的整数。

7. 发明申请

US20100196821A1 POSITIVE RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN USING THE SAME, AND POLYMERIC COMPOUND 有权
标题翻译：正极性组合物，使用其的耐热图案的形成方法和聚合物
公开(公告)号：US20100196821A1
公开(公告)日：2010-08-05
申请号：US12687430
申请日：2010-01-14
申请人： Takahiro Dazai , Daiju Shiono , Tomoyuki Hirano , Tasuku Matsumiya , Masaru Takeshita
发明人： Takahiro Dazai , Daiju Shiono , Tomoyuki Hirano , Tasuku Matsumiya , Masaru Takeshita
IPC分类号： G03F7/20 , G03F7/004 , C08F220/26 , C08F228/06
CPC分类号： C08F220/26 , C08F228/06 , G03F7/0045 , G03F7/0397
摘要： A positive resist composition including a base component (A) which exhibits changed solubility in an alkali developing solution under the action of acid and an acid-generator component (B) which generates acid upon exposure dissolved in an organic solvent (S), the base component (A) containing a polymeric compound (A1) including a structural unit (a0) derived from an acrylate ester having a cyclic group containing a sulfonyl group on the side chain thereof, a structural unit (a1) derived from an acrylate ester containing an acid dissociable, dissolution inhibiting group and a structural unit (a5) represented by general formula (a5-1) (Y1 represents an aliphatic hydrocarbon group; Z represents a monovalent organic group; a represents an integer of 1 to 3, and b represents an integer of 0 to 2, provided that a+b=1 to 3).
摘要翻译：一种正性抗蚀剂组合物，其包含在碱的作用下在碱性显影液中的溶解度变化的碱成分（A）和暴露于有机溶剂（S）时产生酸的酸产生剂成分（B），所述碱含有由侧链上具有含有磺酰基的环状基团的丙烯酸酯衍生的结构单元（a0）的高分子化合物（A1）的组分（A），来源于丙烯酸酯的结构单元（a1）酸解离，溶解抑制基团和由通式（a5-1）表示的结构单元（a5）（Y1表示脂族烃基; Z表示一价有机基团; a表示1〜3的整数，b表示 0〜2的整数，条件是a + b = 1〜3）。

8. 发明授权

US07763412B2 Polymer, positive resist composition and method for forming resist pattern 有权
标题翻译：聚合物，正性抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US07763412B2
公开(公告)日：2010-07-27
申请号：US11628172
申请日：2005-06-02
申请人： Masaru Takeshita , Hideo Hada , Ryotaro Hayashi , Takeshi Iwai , Syogo Matsumaru , Satoshi Fujimura
发明人： Masaru Takeshita , Hideo Hada , Ryotaro Hayashi , Takeshi Iwai , Syogo Matsumaru , Satoshi Fujimura
IPC分类号： G03F7/039 , G03F7/20 , G03F7/30
CPC分类号： G03F7/0397 , G03F7/0046 , G03F7/0395 , Y10S430/108 , Y10S430/111 , Y10S430/122 , Y10S430/126
摘要： A polymer, a positive resist composition, and a method for forming a resist pattern that are able to form a resist pattern with a high level of resolution and excellent etching resistance. The present invention uses a polymer that contains a structural unit (a1) represented by a general formula (a-1) shown below and a structural unit (a2) represented by a general formula (a-2) shown below, another polymer that contains the structural unit (a1) and a structural unit (a3) represented by a general formula (a-3) shown below, and another polymer that contains the structural unit (a1), the structural unit (a2), and the structural unit (a3).
摘要翻译：聚合物，正性抗蚀剂组合物和形成能够以高分辨率和优异耐蚀刻性形成抗蚀剂图案的抗蚀剂图案的方法。本发明使用含有下述通式（a-1）表示的结构单元（a1）和下述通式（a-2）表示的结构单元（a2）的聚合物，该聚合物含有结构单元（a1）和由下述通式（a-3）表示的结构单元（a3）和含有结构单元（a1）的另一种聚合物，结构单元（a2）和结构单元 a3）。

9. 发明授权

US07695889B2 Copolymer for semiconductor lithography and process for production thereof 失效
标题翻译：半导体光刻用共聚物及其制造方法
公开(公告)号：US07695889B2
公开(公告)日：2010-04-13
申请号：US11430738
申请日：2006-05-09
申请人： Takanori Yamagishi , Tomo Oikawa , Masaaki Muroi , Kota Atsuchi , Takahiro Nakamura , Masakazu Yamada , Kensuke Saisyo , Masaru Takeshita
发明人： Takanori Yamagishi , Tomo Oikawa , Masaaki Muroi , Kota Atsuchi , Takahiro Nakamura , Masakazu Yamada , Kensuke Saisyo , Masaru Takeshita
IPC分类号： G03F7/00 , G03F7/004 , C08F2/00
CPC分类号： G03F7/0397 , C08F220/18 , C08F220/28 , G03F7/0046
摘要： A copolymer for semiconductor lithography, comprising at least a recurring unit (A) having a carboxylic acid ester structure whose solubility in alkali increases by the action of an acid and a carboxyl group-containing recurring unit (B), which copolymer is obtained via a step (P) of (co)polymerizing at least a monomer giving a recurring unit (A) and a step (Q) of forming a recurring unit (B) in the co-presence of a recurring unit (A)-containing (co)polymer and/or a monomer giving a recurring unit (A), and an acid.The copolymer is used in production of semiconductor as a resist polymer which is small in roughness, little in development defect and superior in lithography properties such as DOF and the like.
摘要翻译：一种用于半导体光刻的共聚物，其至少包含具有羧酸酯结构的重复单元（A），其通过酸和含羧基的重复单元（B）的作用而在碱中的溶解度增加，该共聚物经由（共）聚合至少一种产生重复单元的单体（A）的步骤（P）和形成重复单元（B）的步骤（Q），在含有重复单元（A）的（共））聚合物和/或提供重复单元（A）的单体和酸。该共聚物用于生产半导体，作为抗蚀剂聚合物，其粗糙度小，显影缺陷少，并且光刻性能如DOF等优异。

10. 发明申请

US20100015548A1 POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN 有权
标题翻译：正电阻组合物和形成电阻图案的方法
公开(公告)号：US20100015548A1
公开(公告)日：2010-01-21
申请号：US11993005
申请日：2006-06-16
申请人： Masaru Takeshita , Hideo Hada , Takeshi Iwai
发明人： Masaru Takeshita , Hideo Hada , Takeshi Iwai
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： G03F7/0397 , C08F220/28 , G03F7/0045 , Y10S430/111
摘要： A positive resist composition including a resin component (A) and an acid generator component (B), the resin component (A) including a copolymer (A1) having a structural unit (a1) derived from an acrylate ester having a monocyclic or polycyclic group-containing acid dissociable, dissolution inhibiting group, a structural unit (a2) derived from an acrylate ester having a lactone-containing cyclic group, a structural unit (a3) derived from an acrylate ester having a hydroxyl group and/or cyano group-containing polycyclic group, and a structural unit (a4) represented by general formula (a4-1) shown below: wherein R represents a hydrogen atom, a halogen atom, a lower alkyl group or a halogenated lower alkyl group; R′ represents a hydrogen atom, a lower alkyl group or an alkoxy group of 1 to 5 carbon atoms; and f represents 0 or 1.
摘要翻译：包含树脂组分（A）和酸产生剂组分（B）的正型抗蚀剂组合物，所述树脂组分（A）包含具有衍生自具有单环或多环基团的丙烯酸酯的结构单元（a1）的共聚物（A1）含有可离解的溶解抑制基团，衍生自具有含内酯环状基团的丙烯酸酯的结构单元（a2），衍生自具有羟基和/或含氰基的丙烯酸酯的结构单元（a3）多环基和由以下通式（a4-1）表示的结构单元（a4）：其中R表示氢原子，卤素原子，低级烷基或卤代低级烷基; R'表示氢原子，低级烷基或碳原子数1〜5的烷氧基。 f表示0或1。

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