专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20080315089A1 Electron gun, electron beam exposure apparatus, and exposure method 有权
标题翻译：电子枪，电子束曝光装置和曝光方法
公开(公告)号：US20080315089A1
公开(公告)日：2008-12-25
申请号：US12151500
申请日：2008-05-07
申请人： Hiroshi Yasuda , Takeshi Haraguchi , Yoshihisa Ooae , Takamasa Satoh , Yoshinori Terui , Seiichi Sakawa , Ryozo Nonogaki
发明人： Hiroshi Yasuda , Takeshi Haraguchi , Yoshihisa Ooae , Takamasa Satoh , Yoshinori Terui , Seiichi Sakawa , Ryozo Nonogaki
IPC分类号： H01J3/02
CPC分类号： H01J37/073 , H01J2237/06316 , H01J2237/06341 , H01J2237/3175
摘要： An electron gun includes an electron source configured to emit electrons. The electron source includes an electron emission region configured to emit the electrons and an electron emission restrictive region configured to restrict emission of the electrons. The electron emission restrictive region is located on a side surface of the electron source except an electron emission surface on a tip of the electron source and is covered with a different material from the electron source. The electron gun emits thermal field-emitted electrons by applying an electric field to the tip while maintaining a sufficiently low temperature to avoid sublimation of a material of the electron source. The material of the electron source may be lanthanum hexaboride (LaB6) or cerium hexaboride (CeB6). The electron emission restrictive region may be covered with carbon.
摘要翻译：电子枪包括被配置为发射电子的电子源。电子源包括配置为发射电子的电子发射区域和被配置为限制电子发射的电子发射限制区域。电子发射限制区域位于电子源的除了电子源的尖端上的电子发射表面以外的电子源的侧表面上，并被与电子源不同的材料覆盖。电子枪通过向尖端施加电场而发射热场发射的电子，同时保持足够低的温度以避免电子源的材料的升华。电子源的材料可以是六硼化镧（LaB 6）或六硼化铈（CeB 6）。电子发射限制区域可以被碳覆盖。

2. 发明授权

US06252344B1 Electron gun used in an electron beam exposure apparatus 有权
标题翻译：用于电子束曝光装置的电子枪
公开(公告)号：US06252344B1
公开(公告)日：2001-06-26
申请号：US09335398
申请日：1999-06-17
申请人： Yoshihisa Ooae , Takamasa Satoh , Akio Yamada , Hiroshi Yasuda
发明人： Yoshihisa Ooae , Takamasa Satoh , Akio Yamada , Hiroshi Yasuda
IPC分类号： H01J2976
CPC分类号： H01J37/241 , H01J2237/3175
摘要： An electron gun, preferably a four-pole electron gun, used in an electron beam exposure apparatus is formed by: a cathode for emitting an electron beam when supplying a negative and high-accelerated voltage; a first grid provided downstream of the cathode for focusing a crossover image of the electron beam when supplying a voltage which becomes a reverse bias for the cathode, and the cathode and the first grid being arranged at a high voltage side of a high voltage insulator; an anode for collecting the electron beam which passes through the first grid, and being arranged at a low voltage side of the high voltage insulator; and a second grid provided at the high voltage side of the high voltage insulator and between the first grid and the anode, and having an aperture for limiting an amount of the electron beam passing therethrough. A voltage which becomes a forward bias for the cathode is supplied to the second grid, and the crossover image is focused at the aperture of the second grid.
摘要翻译：电子束曝光装置中使用的优选四极电子枪的电子枪是通过以下方式形成的：用于在提供负高和高加速电压时发射电子束的阴极; 设置在阴极的下游的第一栅极，用于在提供成为阴极的反向偏压的电压时使聚焦电子束的交叉图像，并且阴极和第一栅极布置在高压绝缘体的高压侧; 用于收集通过第一栅格的电子束并且布置在高压绝缘体的低电压侧的阳极; 以及设置在高压绝缘子的高压侧和第一栅极与阳极之间的第二栅极，并且具有用于限制通过其中的电子束的量的孔。成为阴极的正向偏压的电压被提供给第二栅极，并且交叉图像聚焦在第二栅极的孔径处。

3. 发明授权

US07919750B2 Electron gun, electron beam exposure apparatus, and exposure method 有权
标题翻译：电子枪，电子束曝光装置和曝光方法
公开(公告)号：US07919750B2
公开(公告)日：2011-04-05
申请号：US12151500
申请日：2008-05-07
申请人： Hiroshi Yasuda , Takeshi Haraguchi , Yoshihisa Ooae , Takamasa Satoh , Yoshinori Terui , Seiichi Sakawa , Ryozo Nonogaki
发明人： Hiroshi Yasuda , Takeshi Haraguchi , Yoshihisa Ooae , Takamasa Satoh , Yoshinori Terui , Seiichi Sakawa , Ryozo Nonogaki
IPC分类号： H01J29/48 , H01J37/073
CPC分类号： H01J37/073 , H01J2237/06316 , H01J2237/06341 , H01J2237/3175
摘要： An electron gun includes an electron source configured to emit electrons. The electron source includes an electron emission region configured to emit the electrons and an electron emission restrictive region configured to restrict emission of the electrons. The electron emission restrictive region is located on a side surface of the electron source except an electron emission surface on a tip of the electron source and is covered with a different material from the electron source. The electron gun emits thermal field-emitted electrons by applying an electric field to the tip while maintaining a sufficiently low temperature to avoid sublimation of a material of the electron source. The material of the electron source may be lanthanum hexaboride (LaB6) or cerium hexaboride (CeB6). The electron emission restrictive region may be covered with carbon.
摘要翻译：电子枪包括被配置为发射电子的电子源。电子源包括配置为发射电子的电子发射区域和被配置为限制电子发射的电子发射限制区域。电子发射限制区域位于电子源的除了电子源的尖端上的电子发射表面以外的电子源的侧表面上，并被与电子源不同的材料覆盖。电子枪通过向尖端施加电场而发射热场发射的电子，同时保持足够低的温度以避免电子源的材料的升华。电子源的材料可以是六硼化镧（LaB 6）或六硼化铈（CeB 6）。电子发射限制区域可以被碳覆盖。

4. 发明申请

US20080277598A1 Electron beam exposure apparatus 有权
标题翻译：电子束曝光装置
公开(公告)号：US20080277598A1
公开(公告)日：2008-11-13
申请号：US11729673
申请日：2007-03-28
申请人： Takamasa Satoh , Yoshihisa Ooae
发明人： Takamasa Satoh , Yoshihisa Ooae
IPC分类号： G21K5/10
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/3045 , H01J2237/2025 , H01J2237/31761
摘要： An electron beam exposure apparatus includes: an electron gun for generating an electron beam; a deflector for deflecting the electron beam; a wafer stage; a stage position detector for detecting a position of the wafer stage; and a stage position computing unit for calculating a movement velocity of the wafer stage. On a basis of the movement velocity, the stage position computing unit calculates an amount of positional change of the wafer stage with respect to an interpolation time, and subsequently calculates an amount of positional movement of the wafer stage by sequentially adding the amount of positional change to the position of the wafer stage in synchronism with the interpolation time. Thus, the stage position computing unit calculates an amount of deflection of the electron beam corresponding to the amount of the positional movement of the wafer stage.
摘要翻译：电子束曝光装置包括：用于产生电子束的电子枪; 用于偏转电子束的偏转器; 晶圆台; 用于检测晶片台的位置的台位置检测器; 以及用于计算晶片台的移动速度的台位置计算单元。基于移动速度，台位置计算单元计算晶片载物台相对于插补时间的位置变化量，并且随后通过依次添加位置变化量来计算晶片台的位置移动量到内插时间同步到晶片台的位置。因此，台位置计算单元计算与晶片台的位置移动量对应的电子束的偏转量。

5. 发明授权

US06727658B2 Electron beam generating apparatus and electron beam exposure apparatus 有权
标题翻译：电子束发生装置和电子束曝光装置
公开(公告)号：US06727658B2
公开(公告)日：2004-04-27
申请号：US10383953
申请日：2003-03-07
申请人： Yoshihisa Ooae , Yoichi Shimizu , Takamasa Satoh , Takeshi Haraguchi
发明人： Yoshihisa Ooae , Yoichi Shimizu , Takamasa Satoh , Takeshi Haraguchi
IPC分类号： G09G310
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/065 , H01J37/3177
摘要： An electron beam generating apparatus for generating a plurality of electron beams, which includes: a plurality of cathodes for generating thermoelectrons; a cathode power supply unit for applying negative voltage to the cathodes so as to emit the thermoelectrons from the cathodes; a plurality of grids, which correspond to the plurality of cathodes respectively, for focusing the thermoelectrons emitted from each of the plurality of cathodes, and shaping the plurality of electron beams; and an insulator on which the plurality of cathodes and the plurality of grids are attached.
摘要翻译：一种用于产生多个电子束的电子束产生装置，包括：多个用于产生热电子的阴极; 用于向阴极施加负电压以从阴极发射热电子的阴极电源单元; 分别对应于多个阴极的多个栅格，用于聚焦从多个阴极中的每一个发射的热电子，并对多个电子束进行成形; 以及绝缘体，多个阴极和多个栅极连接在该绝缘体上。

6. 发明授权

US07777202B2 Electron beam exposure apparatus involving the position and velocity calculation 有权
标题翻译：涉及位置和速度计算的电子束曝光装置
公开(公告)号：US07777202B2
公开(公告)日：2010-08-17
申请号：US11729673
申请日：2007-03-28
申请人： Takamasa Satoh , Yoshihisa Ooae
发明人： Takamasa Satoh , Yoshihisa Ooae
IPC分类号： G21K5/10
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/3045 , H01J2237/2025 , H01J2237/31761
摘要： An electron beam exposure apparatus includes: an electron gun for generating an electron beam; a deflector for deflecting the electron beam; a wafer stage; a stage position detector for detecting a position of the wafer stage; and a stage position computing unit for calculating a movement velocity of the wafer stage. On a basis of the movement velocity, the stage position computing unit calculates an amount of positional change of the wafer stage with respect to an interpolation time, and subsequently calculates an amount of positional movement of the wafer stage by sequentially adding the amount of positional change to the position of the wafer stage in synchronism with the interpolation time. Thus, the stage position computing unit calculates an amount of deflection of the electron beam corresponding to the amount of the positional movement of the wafer stage.
摘要翻译：电子束曝光装置包括：用于产生电子束的电子枪; 用于偏转电子束的偏转器; 晶圆台; 用于检测晶片台的位置的台位置检测器; 以及用于计算晶片台的移动速度的台位置计算单元。基于移动速度，台位置计算单元计算晶片载物台相对于插补时间的位置变化量，并且随后通过依次添加位置变化量来计算晶片台的位置移动量到内插时间同步到晶片台的位置。因此，台位置计算单元计算与晶片台的位置移动量对应的电子束的偏转量。

7. 发明授权

US06911780B2 Electron beam, generating device, and testing device 有权
标题翻译：电子束，发电装置和检测装置
公开(公告)号：US06911780B2
公开(公告)日：2005-06-28
申请号：US10434620
申请日：2003-05-09
申请人： Yoshihisa Ooae , Yoichi Shimizu
发明人： Yoshihisa Ooae , Yoichi Shimizu
IPC分类号： G03F7/20 , H01J37/065 , H01J37/305 , H01L21/027 , H01J7/24 , G21K5/10
CPC分类号： H01J37/065 , H01J2237/06308 , H01J2237/3175
摘要： An electron beam generating device, wherein a high-resistance film is formed on the outer surface of an insulator provided with a cathode for emitting thermal electrons and a grid for collecting thermal electrons and forming an electron beam to allow a feeble current to flow to the high-resistance film, thereby preventing the accumulation of thermal electrons on the insulator and discharging. The upper portion of the high-resistance film connected to a chamber supplies an approximate reference potential to the upper portion of the film, and the lower portion of the high-resistance film connected to the grid supplies almost the same potential as that of the grid to the lower portion of the film to allow a feeble current to flow to the film. The prevention of accumulation of thermal electrons on the insulator can prevent discharging, accurately control the current capacity of an electron beam, and give the electron beam generating device a longer service life.
摘要翻译：一种电子束产生装置，其中在设置有用于发射热电子的阴极的绝缘体的外表面上形成高电阻膜，以及用于收集热电子并形成电子束的栅格，以使微弱电流流向高电阻膜，从而防止热电子在绝缘体上的积聚和放电。连接到室的高电阻膜的上部向膜的上部提供近似的参考电位，并且连接到电网的高电阻膜的下部提供与电网几乎相同的电位到薄膜的下部以允许微弱的电流流向胶片。防止热电子在绝缘体上的堆积可以防止放电，精确地控制电子束的电流，并给予电子束产生装置更长的使用寿命。

8. 发明授权

US5945683A Electron beam exposure device 失效
标题翻译：电子束曝光装置
公开(公告)号：US5945683A
公开(公告)日：1999-08-31
申请号：US906389
申请日：1997-08-05
申请人： Tatsuro Ohkawa , Yoshihisa Ooae , Hitoshi Tanaka , Hiroshi Yasuda
发明人： Tatsuro Ohkawa , Yoshihisa Ooae , Hitoshi Tanaka , Hiroshi Yasuda
IPC分类号： H01J37/06 , H01J37/063 , H01J37/305 , H01L21/027
CPC分类号： H01J37/063 , H01J2237/30433 , H01J2237/3175
摘要： An electron beam exposure device includes an alignment optical system; an electromagnetic lens system; a stage on which the sample is provided; and an electron gun. The electron gun is comprised of an electron generating source; an electron generating source heating element which generates heat for increasing the temperature of the electron generating source; a supporting member which supports the electron generating source and the electron generating source heating element; and a Wehnelt. The electron beam exposure device is provided with at least one auxiliary heating element located at respective portion thermally connected to the electron generating source heating element.
摘要翻译：电子束曝光装置包括对准光学系统; 电磁透镜系统; 提供样品的阶段; 和电子枪。电子枪由电子发生源组成; 电子发生源加热元件，其产生用于增加电子发生源的温度的热量; 支撑电子发生源和电子发生源加热元件的支撑构件; 和一个Wehnelt。电子束曝光装置设置有至少一个位于与电子发生源加热元件热连接的相应部分处的辅助加热元件。

9. 发明授权

US5708276A Electron-beam exposure device and a method of detecting a mark position for the device 失效
标题翻译：电子束曝光装置和检测装置的标记位置的方法
公开(公告)号：US5708276A
公开(公告)日：1998-01-13
申请号：US600456
申请日：1996-02-13
申请人： Tatsuro Ohkawa , Kawakami Kenichi , Yoshihisa Ooae , Tohru Ikeda , Kazushi Ishida
发明人： Tatsuro Ohkawa , Kawakami Kenichi , Yoshihisa Ooae , Tohru Ikeda , Kazushi Ishida
IPC分类号： G01B15/00 , G03F7/20 , G03F9/00 , H01J37/304 , H01J37/305 , H01L21/027
CPC分类号： H01J37/3045 , H01J2237/24495 , H01J2237/30438
摘要： An electron-beam exposure device having at least one deflector for deflecting an electron beam and detecting a position of a position-detection mark with the electron beam includes a plurality of detectors detecting electrons scattered from the position-detection mark, a plurality of amplifiers, each of the amplifiers amplifying an output of a corresponding one of the detectors, and a setting unit for setting amplification factors of the amplifiers such that a magnitude of an output from each of the amplifiers is constant irrespective of a deflected position of the electron beam at a time of detection of the position of the position-detection mark.
摘要翻译：具有用于偏转电子束的至少一个偏转器和用电子束检测位置检测标记的位置的电子束曝光装置包括检测从位置检测标记散射的电子的多个检测器，多个放大器，每个放大器放大对应的一个检测器的输出，以及设置单元，用于设置放大器的放大因子，使得来自每个放大器的输出的幅度恒定，而与电子束的偏转位置无关检测位置检测标记的位置的时间。

10. 发明申请

US20080169433A1 Electron beam exposure apparatus and method for cleaning the same 有权
标题翻译：电子束曝光装置及其清洗方法
公开(公告)号：US20080169433A1
公开(公告)日：2008-07-17
申请号：US12077153
申请日：2008-03-17
申请人： Hiroshi Yasuda , Yoshihisa Ooae
发明人： Hiroshi Yasuda , Yoshihisa Ooae
IPC分类号： A61N5/00
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J2237/31793
摘要： Provided is an electron beam exposure apparatus for forming a desired pattern on a sample mounted on a wafer stage by exposure with an electron beam generated form an electron gun. The electron beam exposure apparatus includes: supplying device of injecting a reducing gas into a column in which the electron gun and the wafer stage are housed; and control unit of performing control so that the injection of the reducing gas into the column is continued for a predetermined period of time. Organic contamination is combined with H generated from the reducing gas by irradiation of an electron beam, and then evaporates. Further included is supplying device of injecting an ozone gas into the column. The control unit may perform control so that the injection of the ozone gas into the column in addition to the injection of the reducing gas is continued for a predetermined period of time.
摘要翻译：提供一种电子束曝光装置，用于通过用电子枪产生的电子束曝光在安装在晶片台上的样品上形成所需图案。电子束曝光装置包括：将还原气体注入到容纳电子枪和晶片台的列中的供给装置; 以及执行控制的控制单元，使得将还原气体注入到所述列中持续预定时间段。有机污染与通过照射电子束从还原气体生成的H结合，然后蒸发。还包括将臭氧气体注入塔的供给装置。控制单元可以执行控制，使得除了注入还原气体之外，将臭氧气体注入到塔中持续预定的时间段。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式