专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20130092950A1 NITRIDE SEMICONDUCTOR GROWTH SUBSTRATE AND MANUFACTURING METHOD OF THE SAME, NITRIDE SEMICONDUCTOR EPITAXIAL SUBSTRATE AND NITRIDE SEMICONDUCTOR ELEMENT 审中-公开
标题翻译：氮化物半导体生长衬底及其制造方法，氮化物半导体外延衬底和氮化物半导体元件
公开(公告)号：US20130092950A1
公开(公告)日：2013-04-18
申请号：US13615421
申请日：2012-09-13
申请人： Hajime FUJIKURA , Michiko Matsuda , Taichiroo Konno
发明人： Hajime FUJIKURA , Michiko Matsuda , Taichiroo Konno
IPC分类号： H01L29/20 , H01L21/20
CPC分类号： C30B25/186 , C30B29/403 , H01L33/007 , H01L33/02
摘要： A nitride semiconductor growth substrate includes a principal surface including a C-plane of a sapphire substrate, and a convex portion that is formed on the principal surface, has a cone or pyramid shape or a truncated cone or pyramid shape, is disposed to form a lattice pattern in a top view thereof, and includes a side surface inclined at an angle of less than 90 degrees relative to the principal surface. The convex portion has a height of 0.5 to 3 μm from the principal surface. A distance between adjacent ones of the convex portion is 1 to 6 μm. The side surface of the convex portion has a surface roughness (RMS) of not more than 10 nm.
摘要翻译：氮化物半导体生长衬底包括包括蓝宝石衬底的C面的主表面和形成在主表面上的具有锥形或棱锥形或截锥形或棱锥形状的凸部，以形成并且包括相对于主表面以小于90度的角度倾斜的侧表面。凸部的主面的高度为0.5〜3μm。相邻的凸部之间的距离为1〜6μm。凸部的侧面的表面粗糙度（RMS）为10nm以下。

2. 发明授权

US07723731B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US07723731B2
公开(公告)日：2010-05-25
申请号：US11907895
申请日：2007-10-18
申请人： Taichiroo Konno , Takashi Furuya
发明人： Taichiroo Konno , Takashi Furuya
IPC分类号： H01L33/00
CPC分类号： H01L33/14 , H01L33/0079 , H01L33/02 , H01L33/30 , H01L33/405
摘要： A first conductivity type cladding layer 2, a first side multilayer 9, an active layer 4, a second side multilayer 10, and a second conductivity type cladding layer 3 are provided in a semiconductor light emitting device. The first side multilayer 9 is provided between the first conductivity type cladding layer 2 and the active layer 4, and the second side multilayer 10 is provided between the active layer 4 and the second conductivity type cladding layer 3. Each of the multilayer 9, 10 is transparent with respect to the light generated at the active layer 4, having a bandgap larger than that of the active layer 4, and lattice-matched with the active layer 4.
摘要翻译：在半导体发光器件中设置第一导电型包层2，第一侧多层9，有源层4，第二侧多层10和第二导电型包覆层3。在第一导电型包覆层2和有源层4之间设置第一侧面叠层体9，在有源层4和第二导电型覆盖层3之间设置第二侧面层叠体10。相对于在有源层4处产生的光具有比有源层4的带隙更大的透光性，并且与有源层4晶格匹配。

3. 发明授权

US07675072B2 Light emitting diode 失效
标题翻译：发光二极管
公开(公告)号：US07675072B2
公开(公告)日：2010-03-09
申请号：US11955063
申请日：2007-12-12
申请人： Taichiroo Konno , Masahiro Arai
发明人： Taichiroo Konno , Masahiro Arai
IPC分类号： H01L27/15
CPC分类号： H01L33/42 , H01L33/02
摘要： In a light emitting diode, a light-emitting region is including an active layer provided between a first conductivity type cladding layer formed on the semiconductor substrate and a second conductivity type cladding layer. A transparent conductive film made of a metal oxide is located over the light-emitting region. A layer for preventing exfoliation of the transparent conductive film, the preventing layer being made of a compound semiconductor contains at least aluminum and is located between the light-emitting region and the transparent conductive film. The layer for preventing exfoliation of the transparent conductive film contains a conductivity type determining impurity in a concentration of 1×1019 cm−3 or higher.
摘要翻译：在发光二极管中，发光区域包括设置在形成在半导体衬底上的第一导电型包覆层和第二导电型包覆层之间的有源层。由金属氧化物构成的透明导电膜位于发光区域的上方。作为防止透明导电膜脱落的层，由化合物半导体形成的防止层至少含有铝，位于发光区域和透明导电膜之间。用于防止透明导电膜剥离的层含有1×10 19 cm -3以上的浓度的导电型确定性杂质。

4. 发明授权

US07368759B2 Semiconductor light-emitting device 失效
标题翻译：半导体发光装置
公开(公告)号：US07368759B2
公开(公告)日：2008-05-06
申请号：US11485420
申请日：2006-07-13
申请人： Masahiro Arai , Taichiroo Konno , Kazuyuki Iizuka , Katsuya Akimoto
发明人： Masahiro Arai , Taichiroo Konno , Kazuyuki Iizuka , Katsuya Akimoto
IPC分类号： H01L33/00
CPC分类号： H01L33/14 , H01L33/30
摘要： A semiconductor light emitting device has a light-emitting portion formed on a semiconductor substrate, an As-based p-type contact layer formed thereon, a current spreading layer formed thereon of a metal oxide material, and a buffer layer formed between the p-type cladding layer and the p-type contact layer. The buffer layer has a group III/V semiconductor with a p-type conductivity and hydrogen or carbon included intentionally or unavoidably therein, and the buffer layer has a thickness equal to or greater than a diffusion length L of a dopant doped into the p-type contact layer.
摘要翻译：半导体发光器件具有形成在半导体衬底上的发光部分，形成在其上的As型p型接触层，在其上形成金属氧化物材料的电流扩散层，以及形成在p型接触层之间的缓冲层，型包覆层和p型接触层。缓冲层具有p型导电性的III / V族半导体，有意或不可避免地含有氢或碳，缓冲层的厚度等于或大于掺杂到p型导电体中的掺杂剂的扩散长度L，型接触层。

5. 发明申请

US20070075319A1 Semiconductor light-emitting device with transparent conductive film 失效
标题翻译：具有透明导电膜的半导体发光器件
公开(公告)号：US20070075319A1
公开(公告)日：2007-04-05
申请号：US11485316
申请日：2006-07-13
申请人： Taichiroo Konno , Kazuyuki Iizuka , Masahiro Arai
发明人： Taichiroo Konno , Kazuyuki Iizuka , Masahiro Arai
IPC分类号： H01L33/00
CPC分类号： H01L33/14 , H01L21/02395 , H01L21/02461 , H01L21/02463 , H01L21/02546 , H01L33/02 , H01L33/025
摘要： A semiconductor light-emitting device with a transparent conductive film has: a light-emitting portion formed on a semiconductor substrate, the light-emitting portion having an n-type clad layer, an active layer and a p-type clad layer; an As-based contact layer formed on the light-emitting portion, the contact layer being doped with a p-type dopant of 1×1019/cm3 or more; a current spreading layer formed on the contact layer, the current spreading layer being formed of a transparent conductive film made of a metal oxide material; and a buffer layer formed between the contact layer and the p-type clad layer. The buffer layer has two or more buffer layer parts, and the adjacent buffer layer parts are different each other in material or composition.
摘要翻译：具有透明导电膜的半导体发光器件具有形成在半导体衬底上的发光部分，所述发光部分具有n型覆盖层，有源层和p型覆盖层; 形成在发光部分上的基于As的接触层，所述接触层掺杂有1×10 19 / cm 3以上的p型掺杂物; 形成在所述接触层上的电流扩展层，所述电流扩散层由由金属氧化物材料制成的透明导电膜形成; 以及形成在所述接触层和所述p型覆盖层之间的缓冲层。缓冲层具有两个以上的缓冲层部分，相邻的缓冲层部分在材料或组成上彼此不同。

6. 发明授权

US08796711B2 Light-emitting element 有权
标题翻译：发光元件
公开(公告)号：US08796711B2
公开(公告)日：2014-08-05
申请号：US13137690
申请日：2011-09-02
申请人： Taichiroo Konno
发明人： Taichiroo Konno
IPC分类号： H01L33/10
CPC分类号： H01L33/10
摘要： A light-emitting element includes a semiconductor substrate, a light emitting portion including an active layer, a reflective portion between the semiconductor substrate and the light emitting portion, and a current dispersion layer on the light emitting portion. The reflective portion includes a plurality of pair layers each including a first semiconductor layer and a second semiconductor layer. The first semiconductor layer has a thickness TA1 defined by a formula (1) and the second semiconductor layer has a thickness TB1 defined by a formula (2), where λP represents a peak wavelength of the light emitted from the active layer, nA represents a refractive index of the first semiconductor layer, nB represents a refractive index of the second semiconductor layer, nIn represents a refractive index of a first cladding layer, and θ represents an incident angle of light from the first cladding layer to the second semiconductor layer. T A ⁢ ⁢ 1 = λ p 4 ⁢ n A ⁢ 1 - ( n In ⁢ sin ⁢ ⁢ θ n A ) 2 Formula ⁢ ⁢ ( 1 ) T B ⁢ ⁢ 1 = λ p 4 ⁢ n B ⁢ 1 - ( n In ⁢ sin ⁢ ⁢ θ n B ) 2 Formula ⁢ ⁢ ( 2 )
摘要翻译：发光元件包括半导体衬底，包括有源层的发光部分，半导体衬底和发光部分之间的反射部分以及发光部分上的电流色散层。反射部分包括多个对，每个层包括第一半导体层和第二半导体层。第一半导体层具有由公式（1）定义的厚度TA1，第二半导体层具有由公式（2）定义的厚度TB1，其中λP表示从有源层发射的光的峰值波长，nA表示第一半导体层的折射率，nB表示第二半导体层的折射率，nIn表示第一包层的折射率和折射率; 表示从第一包层到第二半导体层的入射角。 TA⁢1 =λp 4 n A 1 - （n In sinétas; n A）2公式（1）TB ud 1 =λp 4 n B 1 - （n In sin（b）2公式（2）

7. 发明授权

US08786052B2 Nitride semiconductor crystal producing method, nitride semiconductor epitaxial wafer, and nitride semiconductor freestanding substrate 有权
标题翻译：氮化物半导体晶体制造方法，氮化物半导体外延晶片和氮化物半导体独立基板
公开(公告)号：US08786052B2
公开(公告)日：2014-07-22
申请号：US13610496
申请日：2012-09-11
申请人： Hajime Fujikura , Taichiroo Konno , Yuichi Oshima
发明人： Hajime Fujikura , Taichiroo Konno , Yuichi Oshima
IPC分类号： H01L29/20 , H01L29/04
CPC分类号： C30B25/02 , C30B25/14 , C30B25/16 , C30B25/165 , C30B29/406 , H01L29/2003
摘要： A nitride semiconductor crystal producing method, a nitride semiconductor epitaxial wafer, and a nitride semiconductor freestanding substrate, by which it is possible to suppress the occurrence of cracking in the nitride semiconductor crystal and to ensure the enhancement of the yield of the nitride semiconductor crystal. The nitride semiconductor crystal producing method includes growing a nitride semiconductor crystal over a seed crystal substrate, while applying an etching action to an outer end of the seed crystal substrate during the growing of the nitride semiconductor crystal.
摘要翻译：氮化物半导体晶体制造方法，氮化物半导体外延晶片和氮化物半导体独立基板，可以抑制氮化物半导体晶体中的裂纹的发生，并且确保提高氮化物半导体晶体的产率。氮化物半导体晶体制造方法包括在氮化物半导体晶体生长期间，在晶种基板上生长氮化物半导体晶体，同时在晶种基板的外端施加蚀刻作用。

8. 发明申请

US20130069075A1 NITRIDE SEMICONDUCTOR CRYSTAL PRODUCING METHOD, NITRIDE SEMICONDUCTOR EPITAXIAL WAFER, AND NITRIDE SEMICONDUCTOR FREESTANDING SUBSTRATE 有权
标题翻译：氮化物半导体晶体生产方法，氮化物半导体外延晶体和氮化物半导体自由基板
公开(公告)号：US20130069075A1
公开(公告)日：2013-03-21
申请号：US13610496
申请日：2012-09-11
申请人： Hajime Fujikura , Taichiroo Konno , Yuichi Oshima
发明人： Hajime Fujikura , Taichiroo Konno , Yuichi Oshima
IPC分类号： C30B25/16 , C30B25/14 , H01L29/20
CPC分类号： C30B25/02 , C30B25/14 , C30B25/16 , C30B25/165 , C30B29/406 , H01L29/2003
摘要： A nitride semiconductor crystal producing method, a nitride semiconductor epitaxial wafer, and a nitride semiconductor freestanding substrate, by which it is possible to suppress the occurrence of cracking in the nitride semiconductor crystal and to ensure the enhancement of the yield of the nitride semiconductor crystal. The nitride semiconductor crystal producing method includes growing a nitride semiconductor crystal over a seed crystal substrate, while applying an etching action to an outer end of the seed crystal substrate during the growing of the nitride semiconductor crystal.
摘要翻译：氮化物半导体晶体制造方法，氮化物半导体外延晶片和氮化物半导体独立基板，可以抑制氮化物半导体晶体中的裂纹的发生，并且确保提高氮化物半导体晶体的产率。氮化物半导体晶体制造方法包括在氮化物半导体晶体生长期间，在晶种基板上生长氮化物半导体晶体，同时在晶种基板的外端施加蚀刻作用。

9. 发明授权

US07569866B2 Semiconductor light-emitting device 失效
标题翻译：半导体发光装置
公开(公告)号：US07569866B2
公开(公告)日：2009-08-04
申请号：US11497379
申请日：2006-08-02
申请人： Taichiroo Konno , Kazuyuki Iizuka , Masahiro Arai
发明人： Taichiroo Konno , Kazuyuki Iizuka , Masahiro Arai
IPC分类号： H01L33/00
CPC分类号： H01L33/14 , H01L33/30
摘要： A semiconductor light-emitting device having: a light-emitting portion formed on a semiconductor substrate, the light-emitting portion having an n-type clad layer, an active layer and a p-type clad layer; an As-based contact layer formed on the light-emitting portion, the contact layer being doped with a p-type dopant of 1×1019/cm3 or more; a current spreading layer formed on the contact layer, the current spreading layer being formed of a transparent conductive film of a metal oxide material; and a buffer layer formed between the contact layer and the p-type clad layer or formed being inserted inside of the p-type clad layer. The buffer layer is of an undoped group III/V semiconductor, and the group III/V semiconductor is of a group V element having P (phosphorus) as a main component thereof.
摘要翻译：一种半导体发光器件，具有：形成在半导体衬底上的发光部分，所述发光部分具有n型覆盖层，有源层和p型覆盖层; 形成在发光部分上的As基接触层，所述接触层掺杂有1×1019 / cm3以上的p型掺杂剂; 形成在所述接触层上的电流扩展层，所述电流扩散层由金属氧化物材料的透明导电膜形成; 以及形成在所述接触层和所述p型覆盖层之间或形成为插入所述p型覆盖层内部的缓冲层。缓冲层为未掺杂的III / V族III族半导体，III / V族半导体为具有P（磷）作为主要成分的V族元素。

10. 发明授权

US07564071B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US07564071B2
公开(公告)日：2009-07-21
申请号：US11932059
申请日：2007-10-31
申请人： Taichiroo Konno
发明人： Taichiroo Konno
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L33/14 , H01L33/46
摘要： A Si substrate 1, a metal adhesion layer 2, a reflective metal film 3 comprising a multilayer of metallic material having a light reflectivity, a SiO2 film 4, an ohmic contact portion 5 provided at a predetermined position of the SiO2 film 4, a GaP layer 6 including a Mg-doped GaP layer 6A and a Zn-doped GaP layer 6B, a p-type GaInP interposed layer 7, a p-type AlGaInP cladding layer 8, an undoped MQW active layer 9, an n-type AlGaInP cladding layer 10, an n-type AlGaInP window layer 11, an n-type GaAs contact layer 12, a first electrode 13, and a second electrode 14 are formed. The ohmic contact portion 5 is distant from the light emitting part including the p-type AlGaInP cladding layer 8, the undoped MQW active layer 9 and the n-type AlGaInP cladding layer 10 by not less than 300 nm.
摘要翻译： Si衬底1，金属粘附层2，包含具有光反射率的多层金属材料的反射金属膜3，SiO 2膜4，设置在SiO 2膜4的预定位置的欧姆接触部5，GaP 包含Mg掺杂GaP层6A和Zn掺杂GaP层6B的层6，p型GaInP夹层7，p型AlGaInP包层8，未掺杂的MQW有源层9，n型AlGaInP包层层10，形成n型AlGaInP窗口层11，n型GaAs接触层12，第一电极13和第二电极14。欧姆接触部分5远离包括p型AlGaInP包层8，未掺杂的MQW有源层9和n型AlGaInP包覆层10的发光部分不小于300nm。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式