专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20130092950A1 NITRIDE SEMICONDUCTOR GROWTH SUBSTRATE AND MANUFACTURING METHOD OF THE SAME, NITRIDE SEMICONDUCTOR EPITAXIAL SUBSTRATE AND NITRIDE SEMICONDUCTOR ELEMENT 审中-公开
标题翻译：氮化物半导体生长衬底及其制造方法，氮化物半导体外延衬底和氮化物半导体元件
公开(公告)号：US20130092950A1
公开(公告)日：2013-04-18
申请号：US13615421
申请日：2012-09-13
申请人： Hajime FUJIKURA , Michiko Matsuda , Taichiroo Konno
发明人： Hajime FUJIKURA , Michiko Matsuda , Taichiroo Konno
IPC分类号： H01L29/20 , H01L21/20
CPC分类号： C30B25/186 , C30B29/403 , H01L33/007 , H01L33/02
摘要： A nitride semiconductor growth substrate includes a principal surface including a C-plane of a sapphire substrate, and a convex portion that is formed on the principal surface, has a cone or pyramid shape or a truncated cone or pyramid shape, is disposed to form a lattice pattern in a top view thereof, and includes a side surface inclined at an angle of less than 90 degrees relative to the principal surface. The convex portion has a height of 0.5 to 3 μm from the principal surface. A distance between adjacent ones of the convex portion is 1 to 6 μm. The side surface of the convex portion has a surface roughness (RMS) of not more than 10 nm.
摘要翻译：氮化物半导体生长衬底包括包括蓝宝石衬底的C面的主表面和形成在主表面上的具有锥形或棱锥形或截锥形或棱锥形状的凸部，以形成并且包括相对于主表面以小于90度的角度倾斜的侧表面。凸部的主面的高度为0.5〜3μm。相邻的凸部之间的距离为1〜6μm。凸部的侧面的表面粗糙度（RMS）为10nm以下。

2. 发明授权

US07723731B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US07723731B2
公开(公告)日：2010-05-25
申请号：US11907895
申请日：2007-10-18
申请人： Taichiroo Konno , Takashi Furuya
发明人： Taichiroo Konno , Takashi Furuya
IPC分类号： H01L33/00
CPC分类号： H01L33/14 , H01L33/0079 , H01L33/02 , H01L33/30 , H01L33/405
摘要： A first conductivity type cladding layer 2, a first side multilayer 9, an active layer 4, a second side multilayer 10, and a second conductivity type cladding layer 3 are provided in a semiconductor light emitting device. The first side multilayer 9 is provided between the first conductivity type cladding layer 2 and the active layer 4, and the second side multilayer 10 is provided between the active layer 4 and the second conductivity type cladding layer 3. Each of the multilayer 9, 10 is transparent with respect to the light generated at the active layer 4, having a bandgap larger than that of the active layer 4, and lattice-matched with the active layer 4.
摘要翻译：在半导体发光器件中设置第一导电型包层2，第一侧多层9，有源层4，第二侧多层10和第二导电型包覆层3。在第一导电型包覆层2和有源层4之间设置第一侧面叠层体9，在有源层4和第二导电型覆盖层3之间设置第二侧面层叠体10。相对于在有源层4处产生的光具有比有源层4的带隙更大的透光性，并且与有源层4晶格匹配。

3. 发明授权

US07675072B2 Light emitting diode 失效
标题翻译：发光二极管
公开(公告)号：US07675072B2
公开(公告)日：2010-03-09
申请号：US11955063
申请日：2007-12-12
申请人： Taichiroo Konno , Masahiro Arai
发明人： Taichiroo Konno , Masahiro Arai
IPC分类号： H01L27/15
CPC分类号： H01L33/42 , H01L33/02
摘要： In a light emitting diode, a light-emitting region is including an active layer provided between a first conductivity type cladding layer formed on the semiconductor substrate and a second conductivity type cladding layer. A transparent conductive film made of a metal oxide is located over the light-emitting region. A layer for preventing exfoliation of the transparent conductive film, the preventing layer being made of a compound semiconductor contains at least aluminum and is located between the light-emitting region and the transparent conductive film. The layer for preventing exfoliation of the transparent conductive film contains a conductivity type determining impurity in a concentration of 1×1019 cm−3 or higher.
摘要翻译：在发光二极管中，发光区域包括设置在形成在半导体衬底上的第一导电型包覆层和第二导电型包覆层之间的有源层。由金属氧化物构成的透明导电膜位于发光区域的上方。作为防止透明导电膜脱落的层，由化合物半导体形成的防止层至少含有铝，位于发光区域和透明导电膜之间。用于防止透明导电膜剥离的层含有1×10 19 cm -3以上的浓度的导电型确定性杂质。

4. 发明授权

US07368759B2 Semiconductor light-emitting device 失效
标题翻译：半导体发光装置
公开(公告)号：US07368759B2
公开(公告)日：2008-05-06
申请号：US11485420
申请日：2006-07-13
申请人： Masahiro Arai , Taichiroo Konno , Kazuyuki Iizuka , Katsuya Akimoto
发明人： Masahiro Arai , Taichiroo Konno , Kazuyuki Iizuka , Katsuya Akimoto
IPC分类号： H01L33/00
CPC分类号： H01L33/14 , H01L33/30
摘要： A semiconductor light emitting device has a light-emitting portion formed on a semiconductor substrate, an As-based p-type contact layer formed thereon, a current spreading layer formed thereon of a metal oxide material, and a buffer layer formed between the p-type cladding layer and the p-type contact layer. The buffer layer has a group III/V semiconductor with a p-type conductivity and hydrogen or carbon included intentionally or unavoidably therein, and the buffer layer has a thickness equal to or greater than a diffusion length L of a dopant doped into the p-type contact layer.
摘要翻译：半导体发光器件具有形成在半导体衬底上的发光部分，形成在其上的As型p型接触层，在其上形成金属氧化物材料的电流扩散层，以及形成在p型接触层之间的缓冲层，型包覆层和p型接触层。缓冲层具有p型导电性的III / V族半导体，有意或不可避免地含有氢或碳，缓冲层的厚度等于或大于掺杂到p型导电体中的掺杂剂的扩散长度L，型接触层。

5. 发明申请

US20070075319A1 Semiconductor light-emitting device with transparent conductive film 失效
标题翻译：具有透明导电膜的半导体发光器件
公开(公告)号：US20070075319A1
公开(公告)日：2007-04-05
申请号：US11485316
申请日：2006-07-13
申请人： Taichiroo Konno , Kazuyuki Iizuka , Masahiro Arai
发明人： Taichiroo Konno , Kazuyuki Iizuka , Masahiro Arai
IPC分类号： H01L33/00
CPC分类号： H01L33/14 , H01L21/02395 , H01L21/02461 , H01L21/02463 , H01L21/02546 , H01L33/02 , H01L33/025
摘要： A semiconductor light-emitting device with a transparent conductive film has: a light-emitting portion formed on a semiconductor substrate, the light-emitting portion having an n-type clad layer, an active layer and a p-type clad layer; an As-based contact layer formed on the light-emitting portion, the contact layer being doped with a p-type dopant of 1×1019/cm3 or more; a current spreading layer formed on the contact layer, the current spreading layer being formed of a transparent conductive film made of a metal oxide material; and a buffer layer formed between the contact layer and the p-type clad layer. The buffer layer has two or more buffer layer parts, and the adjacent buffer layer parts are different each other in material or composition.
摘要翻译：具有透明导电膜的半导体发光器件具有形成在半导体衬底上的发光部分，所述发光部分具有n型覆盖层，有源层和p型覆盖层; 形成在发光部分上的基于As的接触层，所述接触层掺杂有1×10 19 / cm 3以上的p型掺杂物; 形成在所述接触层上的电流扩展层，所述电流扩散层由由金属氧化物材料制成的透明导电膜形成; 以及形成在所述接触层和所述p型覆盖层之间的缓冲层。缓冲层具有两个以上的缓冲层部分，相邻的缓冲层部分在材料或组成上彼此不同。

6. 发明授权

US08664663B2 Nitride semiconductor template and light-emitting diode including oxygen-doped layer and silicon-doped layer formed on the oxygen-doped layer 有权
标题翻译：氮氧化物半导体模板和包含在氧掺杂层上形成的氧掺杂层和掺硅层的发光二极管
公开(公告)号：US08664663B2
公开(公告)日：2014-03-04
申请号：US13571535
申请日：2012-08-10
申请人： Taichiroo Konno , Hajime Fujikura
发明人： Taichiroo Konno , Hajime Fujikura
IPC分类号： H01L29/15
CPC分类号： H01L21/0242 , H01L21/0243 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02576 , H01L33/007 , H01L33/12 , H01L33/20
摘要： A nitride semiconductor template includes a substrate, and a group III nitride semiconductor layer having an oxygen-doped layer formed on the substrate, and a silicon-doped layer formed on the oxygen-doped layer. A total thickness of the group III nitride semiconductor layer is not smaller than 4 μm and not greater than 10 μm, and an average silicon carrier concentration in the silicon-doped layer is not lower than 1×1018 cm−3 and not higher than 5×1018 cm−3.
摘要翻译：氮化物半导体模板包括衬底和在衬底上形成有氧掺杂层的III族氮化物半导体层和形成在氧掺杂层上的硅掺杂层。 III族氮化物半导体层的总厚度不小于4μm并且不大于10μm，并且掺硅层中的平均硅载流子浓度不低于1×1018cm-3且不高于5 ×1018厘米-3。

7. 发明授权

US08258529B2 Light-emitting element and method of making the same 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US08258529B2
公开(公告)日：2012-09-04
申请号：US12616929
申请日：2009-11-12
申请人： Taichiroo Konno , Nobuaki Kitano
发明人： Taichiroo Konno , Nobuaki Kitano
IPC分类号： H01L33/10 , H01L33/22
CPC分类号： H01L33/10
摘要： A light-emitting element includes a semiconductor substrate, a light emitting portion including an active layer sandwiched between a first cladding layer of a first conductivity type and a second cladding layer of a second conductivity type different from the first conductivity type, a reflective portion provided between the semiconductor substrate and the light emitting portion for reflecting light emitted from the active layer, and a current spreading layer provided on the light emitting portion opposite to the reflective portion and including a concavo-convex portion on a surface thereof. The reflective portion includes a plurality of pair layers each including a first semiconductor layer and a second semiconductor layer different from the first semiconductor layer, and the first semiconductor layer has a thickness TA1 defined by formulas (1) and (3), and the second semiconductor layer has a thickness TB1 defined by formulas (2) and (4).
摘要翻译：发光元件包括半导体衬底，包括夹在第一导电类型的第一包层和不同于第一导电类型的第二导电类型的第二包层之间的有源层的发光部分，设置有反射部分在半导体基板和用于反射从有源层发射的光的发光部分之间的电流扩散层，以及设置在与反射部分相对的发光部分上的电流扩展层，并且在其表面上包括凹凸部分。反射部分包括多个对，每个层包括不同于第一半导体层的第一半导体层和第二半导体层，并且第一半导体层具有由公式（1）和（3）定义的厚度TA1，第二半导体层半导体层具有由式（2）和（4）定义的厚度TB1。

8. 发明申请

US20120086030A1 Light-emitting element 有权
标题翻译：发光元件
公开(公告)号：US20120086030A1
公开(公告)日：2012-04-12
申请号：US13137690
申请日：2011-09-02
申请人： Taichiroo Konno
发明人： Taichiroo Konno
IPC分类号： H01L33/60
CPC分类号： H01L33/10
摘要： A light-emitting element includes a semiconductor substrate, a light emitting portion including an active layer, a reflective portion between the semiconductor substrate and the light emitting portion, and a current dispersion layer on the light emitting portion. The reflective portion includes a plurality of pair layers each including a first semiconductor layer and a second semiconductor layer. The first semiconductor layer has a thickness TA1 defined by a formula (1) and the second semiconductor layer has a thickness TB1 defined by a formula (2), where λP represents a peak wavelength of the light emitted from the active layer, nA represents a refractive index of the first semiconductor layer, nB represents a refractive index of the second semiconductor layer, nIn represents a refractive index of a first cladding layer, and θ represents an incident angle of light from the first cladding layer to the second semiconductor layer. T A   1 = λ p 4  n A  1 - ( n In  sin   θ n A ) 2 Formula   ( 1 ) T B   1 = λ p 4  n B  1 - ( n In  sin   θ n B ) 2 Formula   ( 2 )
摘要翻译：发光元件包括半导体衬底，包括有源层的发光部分，半导体衬底和发光部分之间的反射部分以及发光部分上的电流色散层。反射部分包括多个对，每个层包括第一半导体层和第二半导体层。第一半导体层具有由公式（1）定义的厚度TA1，第二半导体层具有由公式（2）定义的厚度TB1，其中λP表示从有源层发射的光的峰值波长，nA表示第一半导体层的折射率，nB表示第二半导体层的折射率，nIn表示第一包层的折射率和折射率; 表示从第一包层到第二半导体层的入射角。（1）（1）（1）（1）（1）（1）（3）式（1）公式（2）

9. 发明申请

US20110057214A1 EPITAXIAL WAFER, LIGHT-EMITTING ELEMENT, METHOD OF FABRICATING EPITAXIAL WAFER AND METHOD OF FABRICATING LIGHT-EMITTING ELEMENT 有权
标题翻译：外延波长，发光元件，外形波形的制造方法和制造发光元件的方法
公开(公告)号：US20110057214A1
公开(公告)日：2011-03-10
申请号：US12692754
申请日：2010-01-25
申请人： Taichiroo KONNO
发明人： Taichiroo KONNO
IPC分类号： H01L33/00
CPC分类号： H01L33/10 , H01L33/22
摘要： An epitaxial wafer, a light-emitting element, a method of fabricating the epitaxial wafer and a method of fabricating the light-emitting element, which have a high output and a low forward voltage, and can be fabricated without increasing fabricating cost, are provided. The epitaxial wafer is formed with a light-emitting portion, a reflective portion provided between a semiconductor substrate and the light-emitting portion and a current dispersing layer having first and second current dispersing layers, wherein the reflective portion has plural pairs of layers having first and second semiconductor layers wherein the first semiconductor layer has a thickness of TA defined by Equation (1), T A = λ p 4  n A  1 - ( n I  n  sin   θ n A ) 2 ( 1 ) the second semiconductor layer has a thickness of TB defined by Equation (2), T B = λ p 4  n B  1 - ( n I  n  sin   θ n B ) 2 ( 2 ) and the second current dispersing layer has a high carrier density or a high impurity density and is provided with the convexoconcave portion on the surface.
摘要翻译：提供外延晶片，发光元件，制造外延晶片的方法和制造发光元件的方法，其具有高输出和低正向电压，并且可以在不增加制造成本的情况下制造。。外延晶片形成有发光部分，设置在半导体基板和发光部分之间的反射部分和具有第一和第二电流分散层的电流分散层，其中反射部分具有多对具有第一和第二半导体层，其中第一半导体层具有由等式（1）定义的TA的厚度，TA =λp 4 n n A 1 - （n I n n sin sinté; n A）2（1）第二半导体层具有由等式（2）定义的TB的厚度，TB =λp 4 n n B 1 - （n I n n sin sin t e n t n n n 2）（2）和第二电流分散层具有高载流子密度或高杂质浓度，并且在表面上设置凸凹部。

10. 发明申请

US20100327298A1 LIGHT-EMITTING ELEMENT AND METHOD OF MAKING THE SAME 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US20100327298A1
公开(公告)日：2010-12-30
申请号：US12616929
申请日：2009-11-12
申请人： Taichiroo KONNO , Nobuaki KITANO
发明人： Taichiroo KONNO , Nobuaki KITANO
IPC分类号： H01L33/00 , H01L21/30
CPC分类号： H01L33/10
摘要： A light-emitting element includes a semiconductor substrate, a light emitting portion including an active layer sandwiched between a first cladding layer of a first conductivity type and a second cladding layer of a second conductivity type different from the first conductivity type, a reflective portion provided between the semiconductor substrate and the light emitting portion for reflecting light emitted from the active layer, and a current spreading layer provided on the light emitting portion opposite to the reflective portion and including a concavo-convex portion on a surface thereof. The reflective portion includes a plurality of pair layers each including a first semiconductor layer and a second semiconductor layer different from the first semiconductor layer, and the first semiconductor layer has a thickness TA1 defined by formulas (1) and (3), and the second semiconductor layer has a thickness TB1 defined by formulas (2) and (4).
摘要翻译：发光元件包括半导体衬底，包括夹在第一导电类型的第一包层和不同于第一导电类型的第二导电类型的第二包层之间的有源层的发光部分，设置有反射部分在半导体基板和用于反射从有源层发射的光的发光部分之间的电流扩散层，以及设置在与反射部分相对的发光部分上的电流扩展层，并且在其表面上包括凹凸部分。反射部分包括多个对，每个层包括不同于第一半导体层的第一半导体层和第二半导体层，并且第一半导体层具有由公式（1）和（3）定义的厚度TA1，第二半导体层半导体层具有由式（2）和（4）定义的厚度TB1。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式