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1. 发明申请

US20130092950A1 NITRIDE SEMICONDUCTOR GROWTH SUBSTRATE AND MANUFACTURING METHOD OF THE SAME, NITRIDE SEMICONDUCTOR EPITAXIAL SUBSTRATE AND NITRIDE SEMICONDUCTOR ELEMENT 审中-公开
标题翻译：氮化物半导体生长衬底及其制造方法，氮化物半导体外延衬底和氮化物半导体元件
公开(公告)号：US20130092950A1
公开(公告)日：2013-04-18
申请号：US13615421
申请日：2012-09-13
申请人： Hajime FUJIKURA , Michiko Matsuda , Taichiroo Konno
发明人： Hajime FUJIKURA , Michiko Matsuda , Taichiroo Konno
IPC分类号： H01L29/20 , H01L21/20
CPC分类号： C30B25/186 , C30B29/403 , H01L33/007 , H01L33/02
摘要： A nitride semiconductor growth substrate includes a principal surface including a C-plane of a sapphire substrate, and a convex portion that is formed on the principal surface, has a cone or pyramid shape or a truncated cone or pyramid shape, is disposed to form a lattice pattern in a top view thereof, and includes a side surface inclined at an angle of less than 90 degrees relative to the principal surface. The convex portion has a height of 0.5 to 3 μm from the principal surface. A distance between adjacent ones of the convex portion is 1 to 6 μm. The side surface of the convex portion has a surface roughness (RMS) of not more than 10 nm.
摘要翻译：氮化物半导体生长衬底包括包括蓝宝石衬底的C面的主表面和形成在主表面上的具有锥形或棱锥形或截锥形或棱锥形状的凸部，以形成并且包括相对于主表面以小于90度的角度倾斜的侧表面。凸部的主面的高度为0.5〜3μm。相邻的凸部之间的距离为1〜6μm。凸部的侧面的表面粗糙度（RMS）为10nm以下。

2. 发明申请

US20130043442A1 METAL CHLORIDE GAS GENERATOR, HYDRIDE VAPOR PHASE EPITAXY GROWTH APPARATUS, AND NITRIDE SEMICONDUCTOR TEMPLATE 有权
标题翻译：金属氯化物气体发生器，氢化钙蒸汽相外延生长装置和氮化物半导体模板
公开(公告)号：US20130043442A1
公开(公告)日：2013-02-21
申请号：US13569983
申请日：2012-08-08
申请人： Taichiroo KONNO , Hajime FUJIKURA , Michiko MATSUDA
发明人： Taichiroo KONNO , Hajime FUJIKURA , Michiko MATSUDA
IPC分类号： C30B25/14 , B01J10/00 , H01B1/06
CPC分类号： H01L21/0262 , C30B25/08 , C30B25/14 , C30B29/403 , C30B29/406 , H01L21/0254 , H01L21/02576 , H01L21/02581 , H01L29/045 , H01L29/2003 , H01L29/207 , H01L29/36
摘要： A metal chloride gas generator includes: a tube reactor including a receiving section for receiving a metal on an upstream side, and a growing section in which a growth substrate is placed on a downstream side; a gas inlet pipe arranged to extend from an upstream end with a gas inlet via the receiving section to the growing section, for introducing a gas from the upstream end to supply the gas to the receiving section, and supplying a metal chloride gas produced by a reaction between the gas and the metal in the receiving section to the growing section; and a heat shield plate placed in the reactor to thermally shield the upstream end from the growing section. The gas inlet pipe is bent between the upstream end and the heat shield plate.
摘要翻译：金属氯化物气体发生器包括：管式反应器，包括用于在上游侧接收金属的接收部分和生长基底放置在下游侧的生长部分; 气体入口管，其布置成从具有通过接收部的气体入口的上游端延伸到生长部分，用于从上游端引入气体以将气体供应到接收部分，并且供应由接收部分中的气体和金属与生长部分之间的反应; 以及放置在反应器中以将上游端与生长部分进行热屏蔽的隔热板。进气管在上游端和隔热板之间弯曲。

3. 发明申请

US20130001644A1 Nitride Semiconductor Epitaxial Substrate and Nitride Semiconductor Device 有权
标题翻译：氮化物半导体外延基板和氮化物半导体器件
公开(公告)号：US20130001644A1
公开(公告)日：2013-01-03
申请号：US13524300
申请日：2012-06-15
申请人： Hajime FUJIKURA , Taichiroo KONNO , Michiko MATSUDA
发明人： Hajime FUJIKURA , Taichiroo KONNO , Michiko MATSUDA
IPC分类号： H01L29/20
CPC分类号： H01L29/872 , H01L21/0237 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L29/2003 , H01L29/205 , H01L29/66212 , H01L33/007 , H01L33/12 , H01L33/32
摘要： There is provided a nitride semiconductor epitaxial substrate having a group III nitride semiconductor layer with C-plane as a surface, grown on a substrate via a buffer layer of the group III nitride semiconductor containing Al, wherein the buffer layer has an inversion domain on the surface.
摘要翻译：提供了具有C面作为表面的III族氮化物半导体层的氮化物半导体外延衬底，其经由包含Al的III族氮化物半导体的缓冲层在衬底上生长，其中缓冲层在其上具有反转畴表面。

4. 发明申请

US20120305935A1 APPARATUS FOR PRODUCING METAL CHLORIDE GAS AND METHOD FOR PRODUCING METAL CHLORIDE GAS, AND APPARATUS FOR HYDRIDE VAPOR PHASE EPITAXY, NITRIDE SEMICONDUCTOR WAFER, NITRIDE SEMICONDUCTOR DEVICE, WAFER FOR NITRIDE SEMICONDUCTOR LIGHT EMITTING DIODE, METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR FREESTANIDNG SUBSTRATE AND NITRIDE SEMICONDUCTOR CRYSTAL 审中-公开
标题翻译：用于生产金属氯化物气体的方法和用于生产金属氯化物气体的方法，以及用于氢化物蒸气相外延的装置，氮化物半导体波形，氮化物半导体器件，用于氮化物半导体发光二极管的波形，用于制造氮化物半导体基片和氮化物半导体晶体的方法
公开(公告)号：US20120305935A1
公开(公告)日：2012-12-06
申请号：US13483191
申请日：2012-05-30
申请人： Hajime FUJIKURA
发明人： Hajime FUJIKURA
IPC分类号： C01G15/00 , C01B9/02 , H01L21/20 , C30B25/14 , H01L33/32 , B01J19/00 , H01B1/06
CPC分类号： H01L21/0254 , C01B9/02 , C01F7/56 , C01G15/00 , C23C16/303 , C30B25/14 , C30B29/403 , H01L21/0262 , H01L33/007
摘要： There is provided an apparatus for producing metal chloride gas, comprising: a source vessel configured to store a metal source; a gas supply port configured to supply chlorine-containing gas into the source vessel; a gas exhaust port configured to discharge metal chloride-containing gas containing metal chloride gas produced by a reaction between the chlorine-containing gas and the metal source, to outside of the source vessel; and a partition plate configured to form a gas passage continued to the gas exhaust port from the gas supply port by dividing a space in an upper part of the metal source in the source vessel, wherein the gas passage is formed in one route from the gas supply port to the gas exhaust port, with a horizontal passage width of the gas passage set to 5 cm or less, with bent portions provided on the gas passage.
摘要翻译：提供了一种用于生产金属氯化物气体的装置，包括：源极容器，其构造成存储金属源; 气体供给口，其构造为向所述源容器供给含氯气体; 排气口，其构造为将含有氯的气体和所述金属源之间的反应产生的含有金属氯化物气体的含金属氯化物气体排放到所述源极容器的外部; 以及分隔板，其被构造成通过在所述源容器中分割所述金属源的上部的空间而从所述气体供给口形成连续到所述排气口的气体通道，其中，所述气体通道形成在从所述气体供气口到气体排出口，气体通道的水平通道宽度设定在5cm以下，弯曲部分设置在气体通道上。

5. 发明申请

US20110198610A1 NITRIDE SEMICONDUCTOR CRYSTAL, MANUFACTURING METHOD OF THE NITRIDE SEMICONDUCTOR FREESTANDING SUBSTRATE AND NITRIDE SEMICONDUCTOR DEVICE 有权
标题翻译：氮化物半导体晶体，氮化物半导体基板和氮化物半导体器件的制造方法
公开(公告)号：US20110198610A1
公开(公告)日：2011-08-18
申请号：US12870332
申请日：2010-08-27
申请人： Hajime FUJIKURA
发明人： Hajime FUJIKURA
IPC分类号： H01L29/207 , H01L21/22
CPC分类号： H01L21/0254 , B82Y20/00 , C30B25/186 , C30B29/403 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/02507 , H01L21/02576 , H01L21/02579 , H01L21/02581 , H01L21/0262 , H01L21/02642 , H01L21/0265 , H01S5/305 , H01S5/34333
摘要： To provide a nitride semiconductor crystal, comprising: laminated homogeneous nitride semiconductor layers, with a thickness of 2 mm or more, wherein the laminated homogeneous nitride semiconductor layers are constituted so that a nitride semiconductor layer with low dopant concentration and a nitride semiconductor layer with high dopant concentration are alternately laminated by two cycles or more.
摘要翻译：为了提供一种氮化物半导体晶体，其特征在于，包括层叠均匀的氮化物半导体层，其厚度为2mm以上，其中层叠的均质氮化物半导体层构成为具有低掺杂浓度的氮化物半导体层和具有高的氮化物半导体层掺杂剂浓度交替层叠2个周期以上。

6. 发明申请

US20100272141A1 NITRIDE SEMICONDUCTOR FREESTANDING SUBSTRATE AND MANUFACTURING METHOD OF THE SAME, AND LASER DIODE 审中-公开
标题翻译：氮化物半导体自动基板及其制造方法及激光二极管
公开(公告)号：US20100272141A1
公开(公告)日：2010-10-28
申请号：US12571527
申请日：2009-10-01
申请人： Hajime FUJIKURA
发明人： Hajime FUJIKURA
IPC分类号： H01S5/30 , H01L29/12 , C30B25/02
CPC分类号： C30B29/403 , C30B25/183 , H01L21/0242 , H01L21/02458 , H01L21/02491 , H01L21/02502 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L29/045 , H01L29/2003 , H01L33/007 , H01S5/0202 , H01S5/3202 , H01S5/32341 , H01S2304/00 , H01S2304/04 , H01S2304/12
摘要： There is provided a nitride semiconductor freestanding substrate, with a dislocation density set to be 4×106/cm2 or less in a surface of the nitride semiconductor freestanding substrate, having an in-surface variation of directions of crystal axes along the substrate surface at each point on the substrate surface, with this variation of the directions of the crystal axes along the substrate surface set to be in a range of ±0.2° or less.
摘要翻译：提供一种氮化物半导体独立式衬底，其在氮化物半导体独立式衬底的表面中的位错密度设定为4×10 6 / cm 2以下，具有沿着衬底表面的每个晶片的晶轴方向的面内变化点处于基板表面上，沿着基板表面的晶轴的方向的这种变化设定在±0.2°或更小的范围内。

7. 发明申请

US20130072005A1 METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE 有权
标题翻译：制备氮化物半导体衬底的方法
公开(公告)号：US20130072005A1
公开(公告)日：2013-03-21
申请号：US13598175
申请日：2012-08-29
申请人： Hajime FUJIKURA
发明人： Hajime FUJIKURA
IPC分类号： H01L21/203
CPC分类号： C30B25/00 , C30B29/406 , C30B33/00
摘要： To provide a method for manufacturing a nitride semiconductor substrate capable of reducing a cleavage during slicing of a nitride semiconductor single crystal, and capable of improving a yield rate of the nitride semiconductor substrate, comprising: growing a nitride semiconductor single crystal on a seed crystal substrate by vapor phase epitaxy; grinding an outer peripheral surface of the grown nitride semiconductor single crystal; and slicing the nitride semiconductor single crystal with its outer peripheral surface ground, wherein a grinding amount of the outer peripheral surface of the nitride semiconductor single crystal in the step of grinding is 1.5 mm or more.
摘要翻译：为了提供一种能够减少氮化物半导体单晶的切割时的切割并能够提高氮化物半导体基板的成品率的氮化物半导体基板的制造方法，其特征在于，包括：在种子晶体基板上生长氮化物半导体单晶通过气相外延; 研磨生长的氮化物半导体单晶的外周表面; 以及其氮化物半导体单晶的外周面接地切片，其中，所述研磨工序中的所述氮化物半导体单晶的外周面的研磨量为1.5mm以上。

8. 发明申请

US20130023128A1 METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE 有权
标题翻译：制备氮化物半导体衬底的方法
公开(公告)号：US20130023128A1
公开(公告)日：2013-01-24
申请号：US13489570
申请日：2012-06-06
申请人： Hajime FUJIKURA
发明人： Hajime FUJIKURA
IPC分类号： H01L21/3065
CPC分类号： H01L21/02019 , H01L21/302 , H01L21/30621 , H01L21/68764 , H01L21/68771
摘要： There is provided a method for manufacturing a nitride semiconductor substrate, comprising: etching and flattening a surface of a nitride semiconductor substrate disposed facing a surface plate, by using the surface plate having a surface composed of any one of Ni, Ti, Cr, W, and Mo or nitride of any one of them, disposing the surface of the surface plate and a flattening surface of a nitride semiconductor substrate proximately so as to be faced each other, and supplying gas containing at least hydrogen and ammonia between the surface of the surface plate and the surface of the nitride semiconductor substrate, wherein the surface plate and the nitride semiconductor substrate facing each other are set in a high temperature state of 900° C. or more.
摘要翻译：提供了一种用于制造氮化物半导体衬底的方法，包括：通过使用具有由Ni，Ti，Cr，W中的任一种构成的表面的表面板来蚀刻和平坦化面对面板的氮化物半导体衬底的表面，以及其中任何一个的Mo或氮化物，将表面板的表面和氮化物半导体衬底的平坦化表面近似设置成彼此面对，并且在该表面之间提供至少包含氢和氨的气体表面板和氮化物半导体衬底的表面，其中彼此面对的表面板和氮化物半导体衬底被设定在900℃以上的高温状态。

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