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1. 发明授权

US08786052B2 Nitride semiconductor crystal producing method, nitride semiconductor epitaxial wafer, and nitride semiconductor freestanding substrate 有权
标题翻译：氮化物半导体晶体制造方法，氮化物半导体外延晶片和氮化物半导体独立基板
公开(公告)号：US08786052B2
公开(公告)日：2014-07-22
申请号：US13610496
申请日：2012-09-11
申请人： Hajime Fujikura , Taichiroo Konno , Yuichi Oshima
发明人： Hajime Fujikura , Taichiroo Konno , Yuichi Oshima
IPC分类号： H01L29/20 , H01L29/04
CPC分类号： C30B25/02 , C30B25/14 , C30B25/16 , C30B25/165 , C30B29/406 , H01L29/2003
摘要： A nitride semiconductor crystal producing method, a nitride semiconductor epitaxial wafer, and a nitride semiconductor freestanding substrate, by which it is possible to suppress the occurrence of cracking in the nitride semiconductor crystal and to ensure the enhancement of the yield of the nitride semiconductor crystal. The nitride semiconductor crystal producing method includes growing a nitride semiconductor crystal over a seed crystal substrate, while applying an etching action to an outer end of the seed crystal substrate during the growing of the nitride semiconductor crystal.
摘要翻译：氮化物半导体晶体制造方法，氮化物半导体外延晶片和氮化物半导体独立基板，可以抑制氮化物半导体晶体中的裂纹的发生，并且确保提高氮化物半导体晶体的产率。氮化物半导体晶体制造方法包括在氮化物半导体晶体生长期间，在晶种基板上生长氮化物半导体晶体，同时在晶种基板的外端施加蚀刻作用。

2. 发明授权

US08664123B2 Method for manufacturing nitride semiconductor substrate 有权
标题翻译：氮化物半导体衬底的制造方法
公开(公告)号：US08664123B2
公开(公告)日：2014-03-04
申请号：US13489570
申请日：2012-06-06
申请人： Hajime Fujikura
发明人： Hajime Fujikura
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/02019 , H01L21/302 , H01L21/30621 , H01L21/68764 , H01L21/68771
摘要： There is provided a method for manufacturing a nitride semiconductor substrate, comprising: etching and flattening a surface of a nitride semiconductor substrate disposed facing a surface plate, by using the surface plate having a surface composed of any one of Ni, Ti, Cr, W, and Mo or nitride of any one of them, disposing the surface of the surface plate and a flattening surface of a nitride semiconductor substrate proximately so as to be faced each other, and supplying gas containing at least hydrogen and ammonia between the surface of the surface plate and the surface of the nitride semiconductor substrate, wherein the surface plate and the nitride semiconductor substrate facing each other are set in a high temperature state of 900° C. or more.
摘要翻译：提供了一种用于制造氮化物半导体衬底的方法，包括：通过使用具有由Ni，Ti，Cr，W中的任一种构成的表面的表面板来蚀刻和平坦化面对面板的氮化物半导体衬底的表面，以及其中任何一个的Mo或氮化物，将表面板的表面和氮化物半导体衬底的平坦化表面近似设置成彼此面对，并且在该表面之间提供至少包含氢和氨的气体表面板和氮化物半导体衬底的表面，其中彼此面对的表面板和氮化物半导体衬底被设定在900℃以上的高温状态。

3. 发明申请

US20130069075A1 NITRIDE SEMICONDUCTOR CRYSTAL PRODUCING METHOD, NITRIDE SEMICONDUCTOR EPITAXIAL WAFER, AND NITRIDE SEMICONDUCTOR FREESTANDING SUBSTRATE 有权
标题翻译：氮化物半导体晶体生产方法，氮化物半导体外延晶体和氮化物半导体自由基板
公开(公告)号：US20130069075A1
公开(公告)日：2013-03-21
申请号：US13610496
申请日：2012-09-11
申请人： Hajime Fujikura , Taichiroo Konno , Yuichi Oshima
发明人： Hajime Fujikura , Taichiroo Konno , Yuichi Oshima
IPC分类号： C30B25/16 , C30B25/14 , H01L29/20
CPC分类号： C30B25/02 , C30B25/14 , C30B25/16 , C30B25/165 , C30B29/406 , H01L29/2003
摘要： A nitride semiconductor crystal producing method, a nitride semiconductor epitaxial wafer, and a nitride semiconductor freestanding substrate, by which it is possible to suppress the occurrence of cracking in the nitride semiconductor crystal and to ensure the enhancement of the yield of the nitride semiconductor crystal. The nitride semiconductor crystal producing method includes growing a nitride semiconductor crystal over a seed crystal substrate, while applying an etching action to an outer end of the seed crystal substrate during the growing of the nitride semiconductor crystal.
摘要翻译：氮化物半导体晶体制造方法，氮化物半导体外延晶片和氮化物半导体独立基板，可以抑制氮化物半导体晶体中的裂纹的发生，并且确保提高氮化物半导体晶体的产率。氮化物半导体晶体制造方法包括在氮化物半导体晶体生长期间，在晶种基板上生长氮化物半导体晶体，同时在晶种基板的外端施加蚀刻作用。

4. 发明申请

US20130043442A1 METAL CHLORIDE GAS GENERATOR, HYDRIDE VAPOR PHASE EPITAXY GROWTH APPARATUS, AND NITRIDE SEMICONDUCTOR TEMPLATE 有权
标题翻译：金属氯化物气体发生器，氢化钙蒸汽相外延生长装置和氮化物半导体模板
公开(公告)号：US20130043442A1
公开(公告)日：2013-02-21
申请号：US13569983
申请日：2012-08-08
申请人： Taichiroo KONNO , Hajime FUJIKURA , Michiko MATSUDA
发明人： Taichiroo KONNO , Hajime FUJIKURA , Michiko MATSUDA
IPC分类号： C30B25/14 , B01J10/00 , H01B1/06
CPC分类号： H01L21/0262 , C30B25/08 , C30B25/14 , C30B29/403 , C30B29/406 , H01L21/0254 , H01L21/02576 , H01L21/02581 , H01L29/045 , H01L29/2003 , H01L29/207 , H01L29/36
摘要： A metal chloride gas generator includes: a tube reactor including a receiving section for receiving a metal on an upstream side, and a growing section in which a growth substrate is placed on a downstream side; a gas inlet pipe arranged to extend from an upstream end with a gas inlet via the receiving section to the growing section, for introducing a gas from the upstream end to supply the gas to the receiving section, and supplying a metal chloride gas produced by a reaction between the gas and the metal in the receiving section to the growing section; and a heat shield plate placed in the reactor to thermally shield the upstream end from the growing section. The gas inlet pipe is bent between the upstream end and the heat shield plate.
摘要翻译：金属氯化物气体发生器包括：管式反应器，包括用于在上游侧接收金属的接收部分和生长基底放置在下游侧的生长部分; 气体入口管，其布置成从具有通过接收部的气体入口的上游端延伸到生长部分，用于从上游端引入气体以将气体供应到接收部分，并且供应由接收部分中的气体和金属与生长部分之间的反应; 以及放置在反应器中以将上游端与生长部分进行热屏蔽的隔热板。进气管在上游端和隔热板之间弯曲。

5. 发明申请

US20130001644A1 Nitride Semiconductor Epitaxial Substrate and Nitride Semiconductor Device 有权
标题翻译：氮化物半导体外延基板和氮化物半导体器件
公开(公告)号：US20130001644A1
公开(公告)日：2013-01-03
申请号：US13524300
申请日：2012-06-15
申请人： Hajime FUJIKURA , Taichiroo KONNO , Michiko MATSUDA
发明人： Hajime FUJIKURA , Taichiroo KONNO , Michiko MATSUDA
IPC分类号： H01L29/20
CPC分类号： H01L29/872 , H01L21/0237 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L29/2003 , H01L29/205 , H01L29/66212 , H01L33/007 , H01L33/12 , H01L33/32
摘要： There is provided a nitride semiconductor epitaxial substrate having a group III nitride semiconductor layer with C-plane as a surface, grown on a substrate via a buffer layer of the group III nitride semiconductor containing Al, wherein the buffer layer has an inversion domain on the surface.
摘要翻译：提供了具有C面作为表面的III族氮化物半导体层的氮化物半导体外延衬底，其经由包含Al的III族氮化物半导体的缓冲层在衬底上生长，其中缓冲层在其上具有反转畴表面。

6. 发明申请

US20120305935A1 APPARATUS FOR PRODUCING METAL CHLORIDE GAS AND METHOD FOR PRODUCING METAL CHLORIDE GAS, AND APPARATUS FOR HYDRIDE VAPOR PHASE EPITAXY, NITRIDE SEMICONDUCTOR WAFER, NITRIDE SEMICONDUCTOR DEVICE, WAFER FOR NITRIDE SEMICONDUCTOR LIGHT EMITTING DIODE, METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR FREESTANIDNG SUBSTRATE AND NITRIDE SEMICONDUCTOR CRYSTAL 审中-公开
标题翻译：用于生产金属氯化物气体的方法和用于生产金属氯化物气体的方法，以及用于氢化物蒸气相外延的装置，氮化物半导体波形，氮化物半导体器件，用于氮化物半导体发光二极管的波形，用于制造氮化物半导体基片和氮化物半导体晶体的方法
公开(公告)号：US20120305935A1
公开(公告)日：2012-12-06
申请号：US13483191
申请日：2012-05-30
申请人： Hajime FUJIKURA
发明人： Hajime FUJIKURA
IPC分类号： C01G15/00 , C01B9/02 , H01L21/20 , C30B25/14 , H01L33/32 , B01J19/00 , H01B1/06
CPC分类号： H01L21/0254 , C01B9/02 , C01F7/56 , C01G15/00 , C23C16/303 , C30B25/14 , C30B29/403 , H01L21/0262 , H01L33/007
摘要： There is provided an apparatus for producing metal chloride gas, comprising: a source vessel configured to store a metal source; a gas supply port configured to supply chlorine-containing gas into the source vessel; a gas exhaust port configured to discharge metal chloride-containing gas containing metal chloride gas produced by a reaction between the chlorine-containing gas and the metal source, to outside of the source vessel; and a partition plate configured to form a gas passage continued to the gas exhaust port from the gas supply port by dividing a space in an upper part of the metal source in the source vessel, wherein the gas passage is formed in one route from the gas supply port to the gas exhaust port, with a horizontal passage width of the gas passage set to 5 cm or less, with bent portions provided on the gas passage.
摘要翻译：提供了一种用于生产金属氯化物气体的装置，包括：源极容器，其构造成存储金属源; 气体供给口，其构造为向所述源容器供给含氯气体; 排气口，其构造为将含有氯的气体和所述金属源之间的反应产生的含有金属氯化物气体的含金属氯化物气体排放到所述源极容器的外部; 以及分隔板，其被构造成通过在所述源容器中分割所述金属源的上部的空间而从所述气体供给口形成连续到所述排气口的气体通道，其中，所述气体通道形成在从所述气体供气口到气体排出口，气体通道的水平通道宽度设定在5cm以下，弯曲部分设置在气体通道上。

7. 发明申请

US20110006397A1 Group III nitride semiconductor free-standing substrate and method of manufacturing the same, group III nitride semiconductor device and method of manufacturing the same 有权
标题翻译： III族氮化物半导体自支撑衬底及其制造方法，III族氮化物半导体器件及其制造方法
公开(公告)号：US20110006397A1
公开(公告)日：2011-01-13
申请号：US12801214
申请日：2010-05-27
申请人： Hajime Fujikura , Takeshi Eri
发明人： Hajime Fujikura , Takeshi Eri
IPC分类号： H01L29/20 , H01L21/20
CPC分类号： C30B29/403 , C30B25/183 , H01L29/045 , H01L29/2003 , H01L29/66462 , H01L29/7786 , H01L33/0075
摘要： A group III nitride semiconductor free-standing substrate includes an as-grown surface, more than half of a region of the as-grown surface including a single crystal plane. The single crystal plane includes an off-angle inclined in an m-axis or a-axis direction from a C-plane with a group III polarity, or in a c-axis or a-axis direction from an M-plane.
摘要翻译： III族氮化物半导体自立式衬底包括生长表面，包括单晶平面的生长表面的一半以上区域的一半以上。单晶面包括从具有III族极性的C面或从M面向c轴或a轴方向以m轴或a轴方向倾斜的偏角。

8. 发明申请

US20070262293A1 Nitride semiconductor light emitting element 有权
标题翻译：氮化物半导体发光元件
公开(公告)号：US20070262293A1
公开(公告)日：2007-11-15
申请号：US11717052
申请日：2007-03-13
申请人： Hajime Fujikura
发明人： Hajime Fujikura
IPC分类号： H01L29/06
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/32
摘要： A n-type layer, a multiquantum well active layer comprising a plurality of pairs of an InGaN well layer/InGaN barrier layer, and a p-type layer are laminated on a substrate to provide a nitride semiconductor light emitting element. A composition of the InGaN barrier included in the multiquantum well active layer is expressed by InxGa1-xN (0.04≦x≦0.1), and a total thickness of InGaN layers comprising an In composition ratio within a range of 0.04 to 0.1 in the light emitting element including the InGaN barrier layers is not greater than 60 nm.
摘要翻译：包括多对InGaN阱层/ InGaN阻挡层和p型层的n型层，多量子阱有源层层叠在基板上，以提供氮化物半导体发光元件。包括在多量子阱有源层中的InGaN势垒的组成由In x Ga 1-x N（0.04 <= x <= 0.1）表示，并且总共在包含InGaN势垒层的发光元件中，In组成比在0.04〜0.1的范围内的InGaN层的厚度不大于60nm。

9. 发明申请

US20050042789A1 Method for producing nitride semiconductor, semiconductor wafer and semiconductor device 有权
标题翻译：氮化物半导体，半导体晶片和半导体器件的制造方法
公开(公告)号：US20050042789A1
公开(公告)日：2005-02-24
申请号：US10875101
申请日：2004-06-24
申请人： Hajime Fujikura , Kazuyuki Iizuka
发明人： Hajime Fujikura , Kazuyuki Iizuka
IPC分类号： C30B25/02 , C30B25/18 , C30B29/40 , H01L21/205 , H01L33/16 , H01L33/32 , H01L21/00
CPC分类号： H01L21/02458 , C30B25/02 , C30B25/18 , C30B29/40 , H01L21/0237 , H01L21/0242 , H01L21/0245 , H01L21/0254 , H01L21/02587 , H01L21/0262 , H01L21/02645 , H01L21/02647 , H01L21/02661
摘要： A method for producing a nitride semiconductor comprising growing at least first to third nitride semiconductor layers on a substrate; said first nitride semiconductor layer being grown at 400-600° C.; and said second and third nitride semiconductor layers being grown on said first nitride semiconductor layer at 700-1,300° C. after heat-treating said first nitride semiconductor layer at 700-1,300° C.; used as a carrier gas supplied near said substrate together with a starting material gas being a hydrogen/nitrogen mixture gas containing 63% or more by volume of hydrogen during growing said second nitride semiconductor layer, and a hydrogen/nitrogen mixture gas containing 50% or more by volume of nitrogen during growing said third nitride semiconductor layer; and said second nitride semiconductor layer being formed to a thickness of more than 1 μm.
摘要翻译：一种生产氮化物半导体的方法，包括在衬底上生长至少第一至第三氮化物半导体层; 所述第一氮化物半导体层在400-600℃下生长。并且所述第二和第三氮化物半导体层在700-1,300℃热处理所述第一氮化物半导体层之后在700-1300℃下在所述第一氮化物半导体层上生长。在生长所述第二氮化物半导体层期间用作在所述衬底附近供应的载气和起始原料气体，所述原料气体是含有63体积％或更多体积氢气的氢/氮混合气体，以及含有50％或在生长所述第三氮化物半导体层期间更多的氮的体积; 并且所述第二氮化物半导体层形成为大于1μm的厚度。

10. 发明授权

US09175417B2 Method for manufacturing a nitride semiconductor substrate 有权
标题翻译：氮化物半导体衬底的制造方法
公开(公告)号：US09175417B2
公开(公告)日：2015-11-03
申请号：US13598175
申请日：2012-08-29
申请人： Hajime Fujikura
发明人： Hajime Fujikura
IPC分类号： C30B25/02 , C30B25/00 , C30B29/40 , C30B33/00
CPC分类号： C30B25/00 , C30B29/406 , C30B33/00
摘要： The invention provides a method for manufacturing a nitride semiconductor substrate capable of reducing a cleavage during slicing of the nitride semiconductor single crystal and capable of improving a yield rate of the nitride semiconductor substrate. The method includes growing a nitride semiconductor single crystal on a seed crystal substrate by vapor phase epitaxy; grinding an outer peripheral surface the grown nitride semiconductor single crystal; and slicing the nitride semiconductor single crystal with its outer peripheral surface ground. A grinding amount of the outer peripheral surface of the nitride semiconductor single crystal in the step of grinding is 1.5 mm or more.
摘要翻译：本发明提供一种制造氮化物半导体衬底的方法，该方法能够减少氮化物半导体单晶的切割期间的裂纹并能够提高氮化物半导体衬底的成品率。该方法包括通过气相外延在晶种衬底上生长氮化物半导体单晶; 研磨生长的氮化物半导体单晶的外周表面; 并且将其氮化物半导体单晶的外周面接地切片。研磨工序中的氮化物半导体单晶的外周面的研磨量为1.5mm以上。

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