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1. 发明申请

US20090152597A1 BIOSENSOR AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：生物传感器及其制造方法
公开(公告)号：US20090152597A1
公开(公告)日：2009-06-18
申请号：US12195305
申请日：2008-08-20
申请人： Tae Youb KIM , Nae Man Park , Han Young Yu , Moon Gyu Jang , Jong Heon Yang
发明人： Tae Youb KIM , Nae Man Park , Han Young Yu , Moon Gyu Jang , Jong Heon Yang
IPC分类号： H01L29/12 , H01L21/00
CPC分类号： G01N27/4146 , G01N27/4145 , Y10S977/71 , Y10S977/742 , Y10S977/963
摘要： Provided are a biosensor with a silicon nanowire and a method of manufacturing the same, and more particularly, a biosensor with a silicon nanowire including a defect region formed by irradiation of an electron beam, and a method of manufacturing the same. The biosensor includes: a silicon substrate; a source region disposed on the silicon substrate; a drain region disposed on the silicon substrate; and a silicon nanowire disposed on the source region and the drain region, and having a defect region formed by irradiation of an electron beam. Therefore, by irradiating a certain region of a high-concentration doped silicon nanowire with an electron beam to lower electron mobility in the certain region, it is possible to maintain a low contact resistance between the silicon nanowire and a metal electrode and to lower operation current of a biomaterial detection part, thereby improving sensitivity of the biosensor.
摘要翻译：本发明提供一种具有硅纳米线的生物传感器及其制造方法，更具体地，涉及具有通过电子束照射形成的缺陷区域的硅纳米线的生物传感器及其制造方法。生物传感器包括：硅衬底; 设置在所述硅基板上的源极区域; 设置在所述硅基板上的漏极区域; 以及设置在源极区域和漏极区域上的硅纳米线，并且具有通过电子束的照射而形成的缺陷区域。因此，通过用特定的区域照射具有电子束的高浓度掺杂的硅纳米线的特定区域来降低电子迁移率，可以保持硅纳米线与金属电极之间的低接触电阻并降低工作电流的生物材料检测部件，从而提高生物传感器的灵敏度。

2. 发明授权

US08022444B2 Biosensor and method of manufacturing the same 有权
标题翻译：生物传感器及其制造方法
公开(公告)号：US08022444B2
公开(公告)日：2011-09-20
申请号：US12195305
申请日：2008-08-20
申请人： Tae Youb Kim , Nae Man Park , Han Young Yu , Moon Gyu Jang , Jong Heon Yang
发明人： Tae Youb Kim , Nae Man Park , Han Young Yu , Moon Gyu Jang , Jong Heon Yang
IPC分类号： H01L27/085 , H01L27/14 , H01L21/00
CPC分类号： G01N27/4146 , G01N27/4145 , Y10S977/71 , Y10S977/742 , Y10S977/963
摘要： Provided are a biosensor with a silicon nanowire and a method of manufacturing the same, and more particularly, a biosensor with a silicon nanowire including a defect region formed by irradiation of an electron beam, and a method of manufacturing the same. The biosensor includes: a silicon substrate; a source region disposed on the silicon substrate; a drain region disposed on the silicon substrate; and a silicon nanowire disposed on the source region and the drain region, and having a defect region formed by irradiation of an electron beam. Therefore, by irradiating a certain region of a high-concentration doped silicon nanowire with an electron beam to lower electron mobility in the certain region, it is possible to maintain a low contact resistance between the silicon nanowire and a metal electrode and to lower operation current of a biomaterial detection part, thereby improving sensitivity of the biosensor.
摘要翻译：本发明提供一种具有硅纳米线的生物传感器及其制造方法，更具体地，涉及具有通过电子束照射形成的缺陷区域的硅纳米线的生物传感器及其制造方法。生物传感器包括：硅衬底; 设置在所述硅基板上的源极区域; 设置在所述硅基板上的漏极区域; 以及设置在源极区域和漏极区域上的硅纳米线，并且具有通过电子束的照射而形成的缺陷区域。因此，通过用特定的区域照射具有电子束的高浓度掺杂的硅纳米线的特定区域来降低电子迁移率，可以保持硅纳米线与金属电极之间的低接触电阻并降低工作电流的生物材料检测部件，从而提高生物传感器的灵敏度。

3. 发明授权

US08058673B2 Biosensor using nanodot and method of manufacturing the same 有权
标题翻译：使用纳米点的生物传感器及其制造方法
公开(公告)号：US08058673B2
公开(公告)日：2011-11-15
申请号：US12240133
申请日：2008-09-29
申请人： Tae Youb Kim , Chil Seong Ah , Chang Geun Ahn , Han Young Yu , Jong Heon Yang , Moon Gyu Jang
发明人： Tae Youb Kim , Chil Seong Ah , Chang Geun Ahn , Han Young Yu , Jong Heon Yang , Moon Gyu Jang
IPC分类号： H01L29/72
CPC分类号： G01N33/5432 , G01N27/4145 , G01N27/4146 , G01N33/5438 , Y10S977/721 , Y10S977/784 , Y10S977/938
摘要： A biosensor using a nanodot and a method of manufacturing the same are provided. A silicon nanowire can be formed by a CMOS process to reduce manufacturing costs. In addition, an electrically charged nanodot is coupled to a target molecule to be detected, in order to readily change conductivity of the silicon nanowire, thereby making it possible to implement a biosensor capable of providing good sensitivity and being manufactured at a low cost.
摘要翻译：提供了使用纳米点的生物传感器及其制造方法。可以通过CMOS工艺形成硅纳米线，以降低制造成本。此外，为了容易地改变硅纳米线的导电性，带电的纳米点被耦合到待检测的靶分子，从而可以实现能够提供良好的灵敏度并以低成本制造的生物传感器。

4. 发明授权

US08394657B2 Biosensor using nanodot and method of manufacturing the same 有权
标题翻译：使用纳米点的生物传感器及其制造方法
公开(公告)号：US08394657B2
公开(公告)日：2013-03-12
申请号：US13240943
申请日：2011-09-22
申请人： Tae Youb Kim , Chil Seong Ah , Chang Geun Ahn , Han Young Yu , Jong Heon Yang , Moon Gyu Jang
发明人： Tae Youb Kim , Chil Seong Ah , Chang Geun Ahn , Han Young Yu , Jong Heon Yang , Moon Gyu Jang
IPC分类号： H01L29/72
CPC分类号： G01N33/5432 , G01N27/4145 , G01N27/4146 , G01N33/5438 , Y10S977/721 , Y10S977/784 , Y10S977/938
摘要： A biosensor using a nanodot and a method of manufacturing the same are provided. A silicon nanowire can be formed by a CMOS process to reduce manufacturing costs. In addition, an electrically charged nanodot is coupled to a target molecule to be detected, in order to readily change conductivity of the silicon nanowire, thereby making it possible to implement a biosensor capable of providing good sensitivity and being manufactured at a low cost.
摘要翻译：提供了使用纳米点的生物传感器及其制造方法。可以通过CMOS工艺形成硅纳米线，以降低制造成本。此外，为了容易地改变硅纳米线的导电性，带电的纳米点被耦合到待检测的靶分子，从而可以实现能够提供良好的灵敏度并以低成本制造的生物传感器。

5. 发明授权

US08241939B2 Semiconductor nanowire sensor device and method for manufacturing the same 有权
标题翻译：半导体纳米线传感器装置及其制造方法
公开(公告)号：US08241939B2
公开(公告)日：2012-08-14
申请号：US12682571
申请日：2008-07-24
申请人： Chan Woo Park , Chang Geun Ahn , Jong Heon Yang , In Bok Baek , Chil Seong Ah , Han Young Yu , An Soon Kim , Tae Youb Kim , Moon Gyu Jang , Myung Sim Jun
发明人： Chan Woo Park , Chang Geun Ahn , Jong Heon Yang , In Bok Baek , Chil Seong Ah , Han Young Yu , An Soon Kim , Tae Youb Kim , Moon Gyu Jang , Myung Sim Jun
IPC分类号： H01L21/00 , H01L29/06
CPC分类号： H01L29/0665 , B82Y10/00 , B82Y15/00 , H01L29/0673 , H01L29/78696
摘要： A method for manufacturing a biosensor includes forming a silicon nanowire channel, etching a first conductivity-type single crystalline silicon layer which is a top layer of a Silicon-On-Insulator (SOI) substrate to form a first conductivity-type single crystalline silicon line pattern, doping both sidewalls of the first conductivity-type single crystalline silicon line pattern with impurities of a second conductivity-type opposite to the first conductivity-type to form a second conductivity-type channel, forming second conductivity-type pads for forming electrodes at both ends of the first conductivity-type single crystalline silicon line pattern, forming, in an undoped region of the first conductivity-type single crystalline silicon line pattern, a first electrode for applying a reverse-bias voltage to insulate the first conductivity-type single crystalline silicon line pattern and the second conductivity-type channel from each other, and forming second electrodes for applying a bias voltage across the second conductivity-type channel on the second conductivity-type pad.
摘要翻译：制造生物传感器的方法包括形成硅纳米线通道，蚀刻作为绝缘体上硅（SOI）衬底的顶层的第一导电型单晶硅层，以形成第一导电型单晶硅线以与第一导电类型相反的第二导电类型的杂质掺杂第一导电型单晶硅线图案的两个侧壁以形成第二导电型沟道，形成第二导电型垫，用于在第一导电型单晶硅线图案的两端，在第一导电型单晶硅线图案的未掺杂区域中形成用于施加反向偏置电压以使第一导电型单晶硅线型图案绝缘的第一电极晶体硅线图案和第二导电型沟道，并且形成用于施加双面的第二电极在第二导电型垫上的第二导电类型沟道上的电压。

6. 发明申请

US20110194976A1 DETECTION DEVICE AND SYSTEM 有权
标题翻译：检测装置和系统
公开(公告)号：US20110194976A1
公开(公告)日：2011-08-11
申请号：US12682545
申请日：2008-06-13
申请人： Chang Geun Ahn , Chan Woo Park , Jong Heon Yang , In Bok Baek , Chil Seong Ah , Han Young Yu , An Soon Kim , Tae Youb Kim , Moon Gyu Jang , Seon Hee Park
发明人： Chang Geun Ahn , Chan Woo Park , Jong Heon Yang , In Bok Baek , Chil Seong Ah , Han Young Yu , An Soon Kim , Tae Youb Kim , Moon Gyu Jang , Seon Hee Park
IPC分类号： G01N33/48 , H01L27/06
CPC分类号： G01N27/4145 , Y10T436/11
摘要： A detection device and system are provided. The detection device includes a detection capacitor and a Field Effect Transistor (FET). The detection capacitor has a reactive material layer reacting to a specific functional group in a fluid, and first and second electrodes disposed on the both surfaces of an insulating layer, and the FET has a source electrode connected with the second electrode, a gate electrode connected with the first electrode, and a drain electrode. Here, the insulating layer of the detection capacitor is thicker than a gate insulating layer of the FET.
摘要翻译：提供检测装置和系统。检测装置包括检测电容器和场效应晶体管（FET）。检测电容器具有与流体中的特定官能团反应的反应性物质层，以及设置在绝缘层两面的第一和第二电极，并且所述FET具有与所述第二电极连接的源电极，连接有栅电极与第一电极和漏电极。这里，检测电容器的绝缘层比FET的栅极绝缘层厚。

7. 发明申请

US20100270530A1 SEMICONDUCTOR NANOWIRE SENSOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体纳米传感器器件及其制造方法
公开(公告)号：US20100270530A1
公开(公告)日：2010-10-28
申请号：US12682571
申请日：2008-07-24
申请人： Chan Woo Park , Chang Geun Ahn , Jong Heon Yang , In Book Baek , Chil Seong Ah , Han Young Yu , An Soon Kim , Tae Youb Kim , Moon Gyu Jang , Myung Sim Jun
发明人： Chan Woo Park , Chang Geun Ahn , Jong Heon Yang , In Book Baek , Chil Seong Ah , Han Young Yu , An Soon Kim , Tae Youb Kim , Moon Gyu Jang , Myung Sim Jun
IPC分类号： H01L29/775 , H01L21/336
CPC分类号： H01L29/0665 , B82Y10/00 , B82Y15/00 , H01L29/0673 , H01L29/78696
摘要： A method for manufacturing a biosensor device is provided. The method involves forming a silicon nanowire channel with a line width of several nanometers to several tens of nanometers using a typical photolithography process, and using the channel to manufacture a semiconductor nanowire sensor device. The method includes etching a first conductivity-type single crystalline silicon layer which is a top layer of a Silicon-On-Insulator (SOI) substrate to form a first conductivity-type single crystalline silicon line pattern, doping both sidewalls of the first conductivity-type single crystalline silicon line pattern with impurities of a second conductivity-type opposite to the first conductivity-type to form a second conductivity-type channel, forming second conductivity-type pads for forming electrodes at both ends of the first conductivity-type single crystalline silicon line pattern, forming, in an undoped region of the first conductivity-type single crystalline silicon line pattern, a first electrode for applying a reverse-bias voltage to insulate the first conductivity-type single crystalline silicon line pattern and the second conductivity-type channel from each other, and forming second electrodes for applying a bias voltage across the second conductivity-type channel on the second conductivity-type pad.
摘要翻译：提供一种制造生物传感器装置的方法。该方法包括使用典型的光刻工艺形成线宽为几纳米至几十纳米的硅纳米线通道，并使用该通道制造半导体纳米线传感器装置。该方法包括蚀刻作为绝缘体上硅（SOI）衬底的顶层的第一导电型单晶硅层，以形成第一导电型单晶硅线图案，掺杂第一导电型单晶硅线阵列的两个侧壁，形成具有与第一导电类型相反的第二导电类型的杂质的单晶硅线图案，以形成第二导电型沟道，形成用于在第一导电型单晶的两端形成电极的第二导电型焊盘硅线图案，在第一导电型单晶硅线图案的未掺杂区域中形成第一电极，用于施加反向偏置电压以使第一导电型单晶硅线图案和第二导电型并且形成用于在第二导通型通道上施加偏置电压的第二电极导电型垫。

8. 发明授权

US08163240B2 Detection device and system 有权
标题翻译：检测装置和系统
公开(公告)号：US08163240B2
公开(公告)日：2012-04-24
申请号：US12682545
申请日：2008-06-13
申请人： Chang Geun Ahn , Chan Woo Park , Jong Heon Yang , In Bok Baek , Chil Seong Ah , Han Young Yu , An Soon Kim , Tae Youb Kim , Moon Gyu Jang , Seon Hee Park
发明人： Chang Geun Ahn , Chan Woo Park , Jong Heon Yang , In Bok Baek , Chil Seong Ah , Han Young Yu , An Soon Kim , Tae Youb Kim , Moon Gyu Jang , Seon Hee Park
IPC分类号： G01N15/06 , G01N33/00 , G01N33/48 , G01N27/00
CPC分类号： G01N27/4145 , Y10T436/11
摘要： A detection device and system are provided. The detection device includes a detection capacitor and a Field Effect Transistor (FET). The detection capacitor has a reactive material layer reacting to a specific functional group in a fluid, and first and second electrodes disposed on the both surfaces of an insulating layer, and the FET has a source electrode connected with the second electrode, a gate electrode connected with the first electrode, and a drain electrode. Here, the insulating layer of the detection capacitor is thicker than a gate insulating layer of the FET.
摘要翻译：提供检测装置和系统。检测装置包括检测电容器和场效应晶体管（FET）。检测电容器具有与流体中的特定官能团反应的反应性物质层，以及设置在绝缘层两面的第一和第二电极，并且所述FET具有与所述第二电极连接的源电极，连接有栅电极与第一电极和漏电极。这里，检测电容器的绝缘层比FET的栅极绝缘层厚。

9. 发明授权

US07893466B2 Semiconductor FET sensor and method of fabricating the same 有权
标题翻译：半导体FET传感器及其制造方法
公开(公告)号：US07893466B2
公开(公告)日：2011-02-22
申请号：US12195302
申请日：2008-08-20
申请人： Jong Heon Yang , In Bok Baek , Chang Geun Ahn , Chan Woo Park , An Soon Kim , Han Young Yu , Chil Seong Ah , Tae Youb Kim , Myung Sim Jun , Moon Gyu Jang
发明人： Jong Heon Yang , In Bok Baek , Chang Geun Ahn , Chan Woo Park , An Soon Kim , Han Young Yu , Chil Seong Ah , Tae Youb Kim , Myung Sim Jun , Moon Gyu Jang
IPC分类号： G01N27/403
CPC分类号： G01N27/4145 , H01L29/66818 , H01L29/7853
摘要： Provided are a semiconductor Field-Effect Transistor (FET) sensor and a method of fabricating the same. The method includes providing a semiconductor substrate, forming a sensor structure having a fin-shaped structure on the semiconductor substrate, injecting ions for electrical ohmic contact into the sensor structure, and depositing a metal electrode on the sensor structure, immobilizing a sensing material to be specifically combined with a target material onto both sidewall surfaces of the fin-shaped structure, and forming a passage on the sensor structure such that the target material passes through the fin-shaped structure.
摘要翻译：提供了一种半导体场效应晶体管（FET）传感器及其制造方法。该方法包括提供半导体衬底，在半导体衬底上形成具有鳍状结构的传感器结构，将用于电欧姆接触的离子注入到传感器结构中，以及在传感器结构上沉积金属电极，将感测材料固定为特别地将目标材料组合到鳍状结构的两个侧壁表面上，并且在传感器结构上形成通道，使得目标材料通过鳍状结构。

10. 发明申请

US20100283031A1 BIOSENSOR USING NANODOT AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：使用NANODOT的生物传感器及其制造方法
公开(公告)号：US20100283031A1
公开(公告)日：2010-11-11
申请号：US12240133
申请日：2008-09-29
申请人： Tae Youb KIM , Chil Seong Ah , Chang Geun Ahn , Han Young Yu , Jong Heon Yang , Moon Gyu Jang
发明人： Tae Youb KIM , Chil Seong Ah , Chang Geun Ahn , Han Young Yu , Jong Heon Yang , Moon Gyu Jang
IPC分类号： H01L29/775 , H01L21/335
CPC分类号： G01N33/5432 , G01N27/4145 , G01N27/4146 , G01N33/5438 , Y10S977/721 , Y10S977/784 , Y10S977/938
摘要： A biosensor using a nanodot and a method of manufacturing the same are provided. A silicon nanowire can be formed by a CMOS process to reduce manufacturing costs. In addition, an electrically charged nanodot is coupled to a target molecule to be detected, in order to readily change conductivity of the silicon nanowire, thereby making it possible to implement a biosensor capable of providing good sensitivity and being manufactured at a low cost.
摘要翻译：提供了使用纳米点的生物传感器及其制造方法。可以通过CMOS工艺形成硅纳米线，以降低制造成本。此外，为了容易地改变硅纳米线的导电性，带电的纳米点被耦合到待检测的靶分子，从而可以实现能够提供良好的灵敏度并以低成本制造的生物传感器。

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