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1. 发明申请

US20100270530A1 SEMICONDUCTOR NANOWIRE SENSOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体纳米传感器器件及其制造方法
公开(公告)号：US20100270530A1
公开(公告)日：2010-10-28
申请号：US12682571
申请日：2008-07-24
申请人： Chan Woo Park , Chang Geun Ahn , Jong Heon Yang , In Book Baek , Chil Seong Ah , Han Young Yu , An Soon Kim , Tae Youb Kim , Moon Gyu Jang , Myung Sim Jun
发明人： Chan Woo Park , Chang Geun Ahn , Jong Heon Yang , In Book Baek , Chil Seong Ah , Han Young Yu , An Soon Kim , Tae Youb Kim , Moon Gyu Jang , Myung Sim Jun
IPC分类号： H01L29/775 , H01L21/336
CPC分类号： H01L29/0665 , B82Y10/00 , B82Y15/00 , H01L29/0673 , H01L29/78696
摘要： A method for manufacturing a biosensor device is provided. The method involves forming a silicon nanowire channel with a line width of several nanometers to several tens of nanometers using a typical photolithography process, and using the channel to manufacture a semiconductor nanowire sensor device. The method includes etching a first conductivity-type single crystalline silicon layer which is a top layer of a Silicon-On-Insulator (SOI) substrate to form a first conductivity-type single crystalline silicon line pattern, doping both sidewalls of the first conductivity-type single crystalline silicon line pattern with impurities of a second conductivity-type opposite to the first conductivity-type to form a second conductivity-type channel, forming second conductivity-type pads for forming electrodes at both ends of the first conductivity-type single crystalline silicon line pattern, forming, in an undoped region of the first conductivity-type single crystalline silicon line pattern, a first electrode for applying a reverse-bias voltage to insulate the first conductivity-type single crystalline silicon line pattern and the second conductivity-type channel from each other, and forming second electrodes for applying a bias voltage across the second conductivity-type channel on the second conductivity-type pad.
摘要翻译：提供一种制造生物传感器装置的方法。该方法包括使用典型的光刻工艺形成线宽为几纳米至几十纳米的硅纳米线通道，并使用该通道制造半导体纳米线传感器装置。该方法包括蚀刻作为绝缘体上硅（SOI）衬底的顶层的第一导电型单晶硅层，以形成第一导电型单晶硅线图案，掺杂第一导电型单晶硅线阵列的两个侧壁，形成具有与第一导电类型相反的第二导电类型的杂质的单晶硅线图案，以形成第二导电型沟道，形成用于在第一导电型单晶的两端形成电极的第二导电型焊盘硅线图案，在第一导电型单晶硅线图案的未掺杂区域中形成第一电极，用于施加反向偏置电压以使第一导电型单晶硅线图案和第二导电型并且形成用于在第二导通型通道上施加偏置电压的第二电极导电型垫。

2. 发明授权

US07893466B2 Semiconductor FET sensor and method of fabricating the same 有权
标题翻译：半导体FET传感器及其制造方法
公开(公告)号：US07893466B2
公开(公告)日：2011-02-22
申请号：US12195302
申请日：2008-08-20
申请人： Jong Heon Yang , In Bok Baek , Chang Geun Ahn , Chan Woo Park , An Soon Kim , Han Young Yu , Chil Seong Ah , Tae Youb Kim , Myung Sim Jun , Moon Gyu Jang
发明人： Jong Heon Yang , In Bok Baek , Chang Geun Ahn , Chan Woo Park , An Soon Kim , Han Young Yu , Chil Seong Ah , Tae Youb Kim , Myung Sim Jun , Moon Gyu Jang
IPC分类号： G01N27/403
CPC分类号： G01N27/4145 , H01L29/66818 , H01L29/7853
摘要： Provided are a semiconductor Field-Effect Transistor (FET) sensor and a method of fabricating the same. The method includes providing a semiconductor substrate, forming a sensor structure having a fin-shaped structure on the semiconductor substrate, injecting ions for electrical ohmic contact into the sensor structure, and depositing a metal electrode on the sensor structure, immobilizing a sensing material to be specifically combined with a target material onto both sidewall surfaces of the fin-shaped structure, and forming a passage on the sensor structure such that the target material passes through the fin-shaped structure.
摘要翻译：提供了一种半导体场效应晶体管（FET）传感器及其制造方法。该方法包括提供半导体衬底，在半导体衬底上形成具有鳍状结构的传感器结构，将用于电欧姆接触的离子注入到传感器结构中，以及在传感器结构上沉积金属电极，将感测材料固定为特别地将目标材料组合到鳍状结构的两个侧壁表面上，并且在传感器结构上形成通道，使得目标材料通过鳍状结构。

3. 发明申请

US20090152598A1 BIOSENSOR USING SILICON NANOWIRE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：使用硅纳米管的生物传感器及其制造方法
公开(公告)号：US20090152598A1
公开(公告)日：2009-06-18
申请号：US12240114
申请日：2008-09-29
申请人： In Bok BAEK , Jong Heon Yang , Chang Geun Ahn , Han Young Yu , Chil Seong Ah , Chan Woo Park , An Soon Kim , Tae Youb Kim , Moon Gyu Jang , Myung Sim Jun
发明人： In Bok BAEK , Jong Heon Yang , Chang Geun Ahn , Han Young Yu , Chil Seong Ah , Chan Woo Park , An Soon Kim , Tae Youb Kim , Moon Gyu Jang , Myung Sim Jun
IPC分类号： H01L29/00 , H01L21/00
CPC分类号： G01N27/4145 , G01N27/4146
摘要： Provided are a biosensor using a silicon nanowire and a method of manufacturing the same. The silicon nanowire can be formed to have a shape, in which identical patterns are continuously repeated, to enlarge an area in which probe molecules are fixed to the silicon nanowire, thereby increasing detection sensitivity. In addition, the detection sensitivity can be easily adjusted by adjusting a gap between the identical patterns of the silicon nanowire depending on characteristics of target molecules, without adjusting a line width of the silicon nanowire in the conventional art. Further, the gap between the identical patterns of the silicon nanowire can be adjusted depending on characteristics of the target molecule to differentiate detection sensitivities, thereby simultaneously detecting various detection sensitivities.
摘要翻译：提供了使用硅纳米线的生物传感器及其制造方法。可以将硅纳米线形成为具有连续重复相同图案的形状，以扩大探针分子固定在硅纳米线上的面积，从而提高检测灵敏度。此外，通过根据目标分子的特性调整硅纳米线的相同图案之间的间隙，而不调整现有技术中的硅纳米线的线宽，可以容易地调整检测灵敏度。此外，可以根据目标分子的特性来调整硅纳米线的相同图案之间的间隙，以区分检测灵敏度，从而同时检测各种检测灵敏度。

4. 发明申请

US20090152596A1 SEMICONDUCTOR FET SENSOR AND METHOD OF FABRICATING THE SAME 有权
标题翻译：半导体FET传感器及其制造方法
公开(公告)号：US20090152596A1
公开(公告)日：2009-06-18
申请号：US12195302
申请日：2008-08-20
申请人： Jong Heon YANG , In Bok Baek , Chang Geun Ahn , Chan Woo Park , An Soon Kim , Han Young Yu , Chil Seong Ah , Tae Youb Kim , Myung Sim Jun , Moon Gyu Jang
发明人： Jong Heon YANG , In Bok Baek , Chang Geun Ahn , Chan Woo Park , An Soon Kim , Han Young Yu , Chil Seong Ah , Tae Youb Kim , Myung Sim Jun , Moon Gyu Jang
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： G01N27/4145 , H01L29/66818 , H01L29/7853
摘要： Provided are a semiconductor Field-Effect Transistor (FET) sensor and a method of fabricating the same. The method includes providing a semiconductor substrate, forming a sensor structure having a fin-shaped structure on the semiconductor substrate, injecting ions for electrical ohmic contact into the sensor structure, and depositing a metal electrode on the sensor structure, immobilizing a sensing material to be specifically combined with a target material onto both sidewall surfaces of the fin-shaped structure, and forming a passage on the sensor structure such that the target material passes through the fin-shaped structure.
摘要翻译：提供了一种半导体场效应晶体管（FET）传感器及其制造方法。该方法包括提供半导体衬底，在半导体衬底上形成具有鳍状结构的传感器结构，将用于电欧姆接触的离子注入到传感器结构中，以及在传感器结构上沉积金属电极，将感测材料固定为特别地将目标材料组合到鳍状结构的两个侧壁表面上，并且在传感器结构上形成通道，使得目标材料通过鳍状结构。

5. 发明授权

US08241939B2 Semiconductor nanowire sensor device and method for manufacturing the same 有权
标题翻译：半导体纳米线传感器装置及其制造方法
公开(公告)号：US08241939B2
公开(公告)日：2012-08-14
申请号：US12682571
申请日：2008-07-24
申请人： Chan Woo Park , Chang Geun Ahn , Jong Heon Yang , In Bok Baek , Chil Seong Ah , Han Young Yu , An Soon Kim , Tae Youb Kim , Moon Gyu Jang , Myung Sim Jun
发明人： Chan Woo Park , Chang Geun Ahn , Jong Heon Yang , In Bok Baek , Chil Seong Ah , Han Young Yu , An Soon Kim , Tae Youb Kim , Moon Gyu Jang , Myung Sim Jun
IPC分类号： H01L21/00 , H01L29/06
CPC分类号： H01L29/0665 , B82Y10/00 , B82Y15/00 , H01L29/0673 , H01L29/78696
摘要： A method for manufacturing a biosensor includes forming a silicon nanowire channel, etching a first conductivity-type single crystalline silicon layer which is a top layer of a Silicon-On-Insulator (SOI) substrate to form a first conductivity-type single crystalline silicon line pattern, doping both sidewalls of the first conductivity-type single crystalline silicon line pattern with impurities of a second conductivity-type opposite to the first conductivity-type to form a second conductivity-type channel, forming second conductivity-type pads for forming electrodes at both ends of the first conductivity-type single crystalline silicon line pattern, forming, in an undoped region of the first conductivity-type single crystalline silicon line pattern, a first electrode for applying a reverse-bias voltage to insulate the first conductivity-type single crystalline silicon line pattern and the second conductivity-type channel from each other, and forming second electrodes for applying a bias voltage across the second conductivity-type channel on the second conductivity-type pad.
摘要翻译：制造生物传感器的方法包括形成硅纳米线通道，蚀刻作为绝缘体上硅（SOI）衬底的顶层的第一导电型单晶硅层，以形成第一导电型单晶硅线以与第一导电类型相反的第二导电类型的杂质掺杂第一导电型单晶硅线图案的两个侧壁以形成第二导电型沟道，形成第二导电型垫，用于在第一导电型单晶硅线图案的两端，在第一导电型单晶硅线图案的未掺杂区域中形成用于施加反向偏置电压以使第一导电型单晶硅线型图案绝缘的第一电极晶体硅线图案和第二导电型沟道，并且形成用于施加双面的第二电极在第二导电型垫上的第二导电类型沟道上的电压。

6. 发明授权

US08163240B2 Detection device and system 有权
标题翻译：检测装置和系统
公开(公告)号：US08163240B2
公开(公告)日：2012-04-24
申请号：US12682545
申请日：2008-06-13
申请人： Chang Geun Ahn , Chan Woo Park , Jong Heon Yang , In Bok Baek , Chil Seong Ah , Han Young Yu , An Soon Kim , Tae Youb Kim , Moon Gyu Jang , Seon Hee Park
发明人： Chang Geun Ahn , Chan Woo Park , Jong Heon Yang , In Bok Baek , Chil Seong Ah , Han Young Yu , An Soon Kim , Tae Youb Kim , Moon Gyu Jang , Seon Hee Park
IPC分类号： G01N15/06 , G01N33/00 , G01N33/48 , G01N27/00
CPC分类号： G01N27/4145 , Y10T436/11
摘要： A detection device and system are provided. The detection device includes a detection capacitor and a Field Effect Transistor (FET). The detection capacitor has a reactive material layer reacting to a specific functional group in a fluid, and first and second electrodes disposed on the both surfaces of an insulating layer, and the FET has a source electrode connected with the second electrode, a gate electrode connected with the first electrode, and a drain electrode. Here, the insulating layer of the detection capacitor is thicker than a gate insulating layer of the FET.
摘要翻译：提供检测装置和系统。检测装置包括检测电容器和场效应晶体管（FET）。检测电容器具有与流体中的特定官能团反应的反应性物质层，以及设置在绝缘层两面的第一和第二电极，并且所述FET具有与所述第二电极连接的源电极，连接有栅电极与第一电极和漏电极。这里，检测电容器的绝缘层比FET的栅极绝缘层厚。

7. 发明申请

US20110194976A1 DETECTION DEVICE AND SYSTEM 有权
标题翻译：检测装置和系统
公开(公告)号：US20110194976A1
公开(公告)日：2011-08-11
申请号：US12682545
申请日：2008-06-13
申请人： Chang Geun Ahn , Chan Woo Park , Jong Heon Yang , In Bok Baek , Chil Seong Ah , Han Young Yu , An Soon Kim , Tae Youb Kim , Moon Gyu Jang , Seon Hee Park
发明人： Chang Geun Ahn , Chan Woo Park , Jong Heon Yang , In Bok Baek , Chil Seong Ah , Han Young Yu , An Soon Kim , Tae Youb Kim , Moon Gyu Jang , Seon Hee Park
IPC分类号： G01N33/48 , H01L27/06
CPC分类号： G01N27/4145 , Y10T436/11
摘要： A detection device and system are provided. The detection device includes a detection capacitor and a Field Effect Transistor (FET). The detection capacitor has a reactive material layer reacting to a specific functional group in a fluid, and first and second electrodes disposed on the both surfaces of an insulating layer, and the FET has a source electrode connected with the second electrode, a gate electrode connected with the first electrode, and a drain electrode. Here, the insulating layer of the detection capacitor is thicker than a gate insulating layer of the FET.
摘要翻译：提供检测装置和系统。检测装置包括检测电容器和场效应晶体管（FET）。检测电容器具有与流体中的特定官能团反应的反应性物质层，以及设置在绝缘层两面的第一和第二电极，并且所述FET具有与所述第二电极连接的源电极，连接有栅电极与第一电极和漏电极。这里，检测电容器的绝缘层比FET的栅极绝缘层厚。

8. 发明授权

US08164123B2 Biosensor and method of driving the same 失效
标题翻译：生物传感器及其驱动方法
公开(公告)号：US08164123B2
公开(公告)日：2012-04-24
申请号：US12703939
申请日：2010-02-11
申请人： Chan Woo Park , Chang Geun Ahn , Chil Seong Ah , Tae Youb Kim , An Soon Kim , Jong Heon Yang , Gun Yong Sung
发明人： Chan Woo Park , Chang Geun Ahn , Chil Seong Ah , Tae Youb Kim , An Soon Kim , Jong Heon Yang , Gun Yong Sung
IPC分类号： H01L29/78 , H01L29/772
CPC分类号： G01N27/4145
摘要： Provided are a biosensor and a method of driving the same. The biosensor includes a transistor including a substrate including a source, a drain, and a channel formed between the source and the drain, a gate insulating layer formed on the channel, and a source electrode and a drain electrode respectively connected with the source and the drain, a fluid line for covering the transistor to have an inner space together with the transistor and in which a sample solution including target molecules flows, a reference electrode formed on an inner wall of the fluid line, and a probe molecule layer attached on the reference electrode and reacting with the target molecules. Accordingly, the reference electrode is formed on the inner wall of the fluid line, enabling miniaturization of the bio device. Also, the probe molecules are formed on the reference electrode to measure a change in threshold voltage according to a change in electric potential between the reference electrode and the gate insulating layer, such that the sensitivity and reaction rate can be remarkably improved.
摘要翻译：提供了一种生物传感器及其驱动方法。生物传感器包括晶体管，其包括基板，该基板包括源极，漏极和形成在源极和漏极之间的沟道，形成在沟道上的栅极绝缘层以及分别与源极和漏极连接的源极和漏极漏极，用于覆盖晶体管的流体线，其与晶体管一起具有内部空间，并且其中包含目标分子的样品溶液流动，形成在流体管线的内壁上的参考电极和附着在该流体管线上的探针分子层参考电极并与靶分子反应。因此，参考电极形成在流体管线的内壁上，使生物装置能够小型化。此外，探针分子形成在参考电极上，以根据参考电极和栅极绝缘层之间的电位的变化来测量阈值电压的变化，从而可以显着提高灵敏度和反应速率。

9. 发明申请

US20110068015A1 BIOSENSOR AND METHOD OF DRIVING THE SAME 失效
标题翻译：生物传感器及其驱动方法
公开(公告)号：US20110068015A1
公开(公告)日：2011-03-24
申请号：US12703939
申请日：2010-02-11
申请人： Chan Woo Park , Chang Geun Ahn , Chil Seong Ah , Tae Youb Kim , An Soon Kim , Jong Heon Yang , Gun Yong Sung
发明人： Chan Woo Park , Chang Geun Ahn , Chil Seong Ah , Tae Youb Kim , An Soon Kim , Jong Heon Yang , Gun Yong Sung
IPC分类号： G01N27/26 , G01F1/64
CPC分类号： G01N27/4145
摘要： Provided are a biosensor and a method of driving the same. The biosensor includes a transistor including a substrate including a source, a drain, and a channel formed between the source and the drain, a gate insulating layer formed on the channel, and a source electrode and a drain electrode respectively connected with the source and the drain, a fluid line for covering the transistor to have an inner space together with the transistor and in which a sample solution including target molecules flows, a reference electrode formed on an inner wall of the fluid line, and a probe molecule layer attached on the reference electrode and reacting with the target molecules. Accordingly, the reference electrode is formed on the inner wall of the fluid line, enabling miniaturization of the bio device. Also, the probe molecules are formed on the reference electrode to measure a change in threshold voltage according to a change in electric potential between the reference electrode and the gate insulating layer, such that the sensitivity and reaction rate can be remarkably improved.
摘要翻译：提供了一种生物传感器及其驱动方法。生物传感器包括晶体管，其包括基板，该基板包括源极，漏极和形成在源极和漏极之间的沟道，形成在沟道上的栅极绝缘层以及分别与源极和漏极连接的源极和漏极漏极，用于覆盖晶体管的流体线，其与晶体管一起具有内部空间，并且其中包含目标分子的样品溶液流动，形成在流体管线的内壁上的参考电极和附着在该流体管线上的探针分子层参考电极并与靶分子反应。因此，参考电极形成在流体管线的内壁上，使生物装置能够小型化。此外，探针分子形成在参考电极上，以根据参考电极和栅极绝缘层之间的电位的变化来测量阈值电压的变化，从而可以显着提高灵敏度和反应速率。

10. 发明申请

US20110053290A1 LIGHT ADDRESSING BIOSENSOR CHIP AND METHOD OF DRIVING THE SAME 审中-公开
标题翻译：光寻址生物传感器芯片及其驱动方法
公开(公告)号：US20110053290A1
公开(公告)日：2011-03-03
申请号：US12858158
申请日：2010-08-17
申请人： Chang Geun Ahn , Chan Woo Park , Jong Heon Yang , Tae Youb Kim , Chil Seong Ah , An Soon Kim , Bong Kyu Kim , Gun Yong Sung , Seon Hee Park
发明人： Chang Geun Ahn , Chan Woo Park , Jong Heon Yang , Tae Youb Kim , Chil Seong Ah , An Soon Kim , Bong Kyu Kim , Gun Yong Sung , Seon Hee Park
IPC分类号： G01N33/566 , H01L29/772
CPC分类号： G01N21/75 , B01L3/502761 , B01L2200/0668 , B01L2300/0645 , B01L2400/043 , G01N21/253 , G01N35/0098 , G01N2035/00158 , G01N2035/00237 , H01L27/14601
摘要： Provided is a biosensor chip. The biosensor chip includes a plurality of biosensor cells that are arranged in a matrix and selectively generate and output a sensed signal by addressing of external light, at least one sensing line that is simultaneously connected with the plurality of biosensor cells and transmits the sensed signal from one selected from the biosensor cells, and an output terminal that receives the sensed signal from the sensing line and outputs the sensed signal to an external reader. Thus, the biosensor cells are set in array in the biosensor chip without a separate driving unit, so that a process of manufacturing the biosensor chip is simplified. The biosensor cell to be sensed is selectively addressed through the external light, so that it is possible to reduce a price of the biosensor chip used as a disposable chip.
摘要翻译：提供了一种生物传感器芯片。生物传感器芯片包括多个生物传感器单元，其被布置在矩阵中并且通过寻址外部光选择性地生成和输出感测信号，至少一个感测线与多个生物传感器单元同时连接并且将感测信号从从生物传感器单元中选择的一个，以及从感测线接收感测信号并将感测到的信号输出到外部读取器的输出端子。因此，生物传感器单元在没有单独的驱动单元的情况下被设置在生物传感器芯片中，从而简化了生物传感器芯片的制造工艺。通过外部光选择性地寻址要感测的生物传感器单元，从而可以降低用作一次性芯片的生物传感器芯片的价格。

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