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    • 7. 发明申请
    • SEMICONDUCTOR NANOWIRE SENSOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
    • 半导体纳米传感器器件及其制造方法
    • US20100270530A1
    • 2010-10-28
    • US12682571
    • 2008-07-24
    • Chan Woo ParkChang Geun AhnJong Heon YangIn Book BaekChil Seong AhHan Young YuAn Soon KimTae Youb KimMoon Gyu JangMyung Sim Jun
    • Chan Woo ParkChang Geun AhnJong Heon YangIn Book BaekChil Seong AhHan Young YuAn Soon KimTae Youb KimMoon Gyu JangMyung Sim Jun
    • H01L29/775H01L21/336
    • H01L29/0665B82Y10/00B82Y15/00H01L29/0673H01L29/78696
    • A method for manufacturing a biosensor device is provided. The method involves forming a silicon nanowire channel with a line width of several nanometers to several tens of nanometers using a typical photolithography process, and using the channel to manufacture a semiconductor nanowire sensor device. The method includes etching a first conductivity-type single crystalline silicon layer which is a top layer of a Silicon-On-Insulator (SOI) substrate to form a first conductivity-type single crystalline silicon line pattern, doping both sidewalls of the first conductivity-type single crystalline silicon line pattern with impurities of a second conductivity-type opposite to the first conductivity-type to form a second conductivity-type channel, forming second conductivity-type pads for forming electrodes at both ends of the first conductivity-type single crystalline silicon line pattern, forming, in an undoped region of the first conductivity-type single crystalline silicon line pattern, a first electrode for applying a reverse-bias voltage to insulate the first conductivity-type single crystalline silicon line pattern and the second conductivity-type channel from each other, and forming second electrodes for applying a bias voltage across the second conductivity-type channel on the second conductivity-type pad.
    • 提供一种制造生物传感器装置的方法。 该方法包括使用典型的光刻工艺形成线宽为几纳米至几十纳米的硅纳米线通道,并使用该通道制造半导体纳米线传感器装置。 该方法包括蚀刻作为绝缘体上硅(SOI)衬底的顶层的第一导电型单晶硅层,以形成第一导电型单晶硅线图案,掺杂第一导电型单晶硅线阵列的两个侧壁, 形成具有与第一导电类型相反的第二导电类型的杂质的单晶硅线图案,以形成第二导电型沟道,形成用于在第一导电型单晶的两端形成电极的第二导电型焊盘 硅线图案,在第一导电型单晶硅线图案的未掺杂区域中形成第一电极,用于施加反向偏置电压以使第一导电型单晶硅线图案和第二导电型 并且形成用于在第二导通型通道上施加偏置电压的第二电极 导电型垫。
    • 8. 发明授权
    • Sensing device
    • 感应装置
    • US08426900B2
    • 2013-04-23
    • US13122273
    • 2009-05-27
    • Chang Geun AhnChan Woo ParkJong Heon YangIn Bok BaekChil Seong AhAn Soon KimTae Youb KimGun Yong Sung
    • Chang Geun AhnChan Woo ParkJong Heon YangIn Bok BaekChil Seong AhAn Soon KimTae Youb KimGun Yong Sung
    • G01N27/403
    • G01N27/4145G01N27/4146
    • Provided is a sensing device, which includes a reactive material layer (260) responding to a specific functional group in a fluid, a sensing capacitor (B) including first and second electrodes disposed on and under an insulating layer (230), the first electrode being disposed under the reactive material layer (260), and a field effect transistor including a gate electrode connected with the first electrode of the sensing capacitor. Here, the reactive material layer (260) is formed in a conductive three-dimensional structure to widen a surface area. Thus, the sensing device may have high sensitivity by maximizing a capacitor sharing effect and a change in voltage amount applied to a gate, which may be caused by widening a surface area of the conductive three-dimensional structure with respect to the fluid flow.
    • 提供了一种感测装置,其包括响应于流体中的特定官能团的反应性材料层(260),包括设置在绝缘层(230)上和下方的第一和第二电极的感测电容器(B),第一电极 设置在反应性材料层(260)下方的场效应晶体管,以及包括与感测电容器的第一电极连接的栅电极的场效应晶体管。 这里,反应性材料层(260)形成为导电三维结构以扩大表面积。 因此,感测装置可以通过最大化电容器共享效应和施加到栅极的电压量的变化而具有高灵敏度,这可能是通过相对于流体流动扩大导电三维结构的表面积而引起的。