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1. 发明申请

WO2017145210A1 SEMICONDUCTOR SWITCHING ELEMENT 审中-公开
标题翻译：半导体开关元件
公开(公告)号：WO2017145210A1
公开(公告)日：2017-08-31
申请号：PCT/JP2016/005221
申请日：2016-12-26
申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA , DENSO CORPORATION
发明人： SAITO, Jun , AOI, Sachiko , URAKAMI, Yasushi
IPC分类号： H01L29/78 , H01L29/739 , H01L29/06
CPC分类号： H01L29/0623 , H01L21/047 , H01L21/26586 , H01L29/0696 , H01L29/1095 , H01L29/1608 , H01L29/42368 , H01L29/66068 , H01L29/66734 , H01L29/7397 , H01L29/7813
摘要： A trench gate semiconductor switching element is provided. The semiconductor substrate of this element includes a second conductivity type bottom region in contact with the gate insulation layer at a bottom surface of the trench; and a first conductivity type second semiconductor region extending from a position in contact with a lower surface of the body region to a position in contact with a lower surface of the bottom region, and in contact with the gate insulation layer on a lower side of the body region. The bottom region includes a low concentration region in contact with the gate insulation layer in a first range of the bottom surface positioned at an end in a long direction of the trench; and a high concentration region in contact with the gate insulation layer in a second range of the bottom surface adjacent to the first range.
摘要翻译：提供沟槽栅极半导体开关元件。该元件的半导体衬底包括在沟槽的底表面处与栅极绝缘层接触的第二导电类型底部区域; 以及第一导电型第二半导体区域，从与所述本体区域的下表面接触的位置延伸到与所述底部区域的下表面接触的位置，并且在所述第一导电型第二半导体区域的下侧与所述栅绝缘层接触身体部位。底部区域包括在位于沟槽的长边方向的端部的底面的第一范围内与栅极绝缘层接触的低浓度区域，以及在与第一范围相邻的底表面的第二范围内与栅极绝缘层接触的高浓度区域。

2. 发明申请

WO2017145211A1 SEMICONDUCTOR SWITCHING ELEMENT 审中-公开
标题翻译：半导体开关元件
公开(公告)号：WO2017145211A1
公开(公告)日：2017-08-31
申请号：PCT/JP2016/005222
申请日：2016-12-26
申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA , DENSO CORPORATION
发明人： SAITO, Jun , AOI, Sachiko , URAKAMI, Yasushi
IPC分类号： H01L29/78 , H01L29/739 , H01L29/06
CPC分类号： H01L29/7813 , H01L21/047 , H01L21/26586 , H01L29/0623 , H01L29/0696 , H01L29/1095 , H01L29/1608 , H01L29/42368 , H01L29/66068 , H01L29/66734 , H01L29/7397
摘要： A trench gate semiconductor switching element is provided. The semiconductor substrate of ths element includes a second conductivity type bottom region in contact with the gate insulation layer at a bottom surface of the trench, and a first conductivity type second semiconductor region extending from a position in contact with a lower surface of the body region to a position in contact with a lower surface of the bottom region. The bottom region includes a first bottom region in contact with the gate insulation layer in a first range of the bottom surface positioned at an end in a long direction of the trench and extending from the bottom surface to a first position; and a second bottom region in contact with the gate insulation layer in a second range adjacent to the first range and extending from the bottom surface to a second position lower than the first position.
摘要翻译：提供沟槽栅极半导体开关元件。该元件的半导体衬底包括在沟槽的底表面处与栅极绝缘层接触的第二导电类型底部区域和从与主体区域的下表面接触的位置延伸的第一导电类型第二半导体区域到与底部区域的下表面接触的位置。所述底部区域包括第一底部区域和第二底部区域，所述第一底部区域在所述底表面的第一范围中与所述栅极绝缘层接触，所述第一底部表面位于所述沟槽的长度方向上的端部处并且从所述底表面延伸到第一位置; 以及第二底部区域，所述第二底部区域在与所述第一范围相邻的第二范围内与所述栅极绝缘层接触，并且从所述底面延伸到低于所述第一位置的第二位置。

3. 发明申请

WO2015145939A1 INSULATED GATE TYPE SEMICONDUCTOR DEVICE 审中-公开
标题翻译：绝缘栅型半导体器件
公开(公告)号：WO2015145939A1
公开(公告)日：2015-10-01
申请号：PCT/JP2015/000522
申请日：2015-02-05
申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA
发明人： SAITO, Jun , HAMADA, Kimimori , SOENO, Akitaka , TAKAYA, Hidefumi , AOI, Sachiko , YAMAMOTO, Toshimasa
IPC分类号： H01L29/78 , H01L29/06
CPC分类号： H01L21/76229 , H01L21/761 , H01L29/0619 , H01L29/0623 , H01L29/0696 , H01L29/1608 , H01L29/4236 , H01L29/66068 , H01L29/7811 , H01L29/7813
摘要： An insulating gate type semiconductor device being capable of easily depleting an outer periphery region is provided. The insulating gate type semiconductor device includes: first to fourth outer periphery trenches formed in a front surface of a semiconductor substrate; insulating layers located in the outer periphery trenches; fifth semiconductor regions being of a second conductive type and formed in ranges exposed to bottom surfaces of the outer periphery trenches; and a connection region connecting the fifth semiconductor region exposed to the bottom surface of the second outer periphery trench to the fifth semiconductor region exposed to the bottom surface of the third outer periphery trench. A clearance between the second and third outer periphery trenches is wider than each of a clearance between the first and second outer periphery trenches and a clearance between the third and fourth outer periphery trenches.
摘要翻译：提供能够容易地耗尽外周区域的绝缘栅型半导体器件。绝缘栅型半导体器件包括：形成在半导体衬底的前表面中的第一至第四外周沟槽; 位于外周沟槽中的绝缘层; 第五半导体区域是第二导电类型并且形成在暴露于外周沟槽的底表面的范围内; 以及将暴露于第二外周沟槽的底表面的第五半导体区域连接到暴露于第三外周沟槽的底表面的第五半导体区域的连接区域。第二和第三外周沟槽之间的间隙比第一和第二外周沟槽之间的间隙以及第三和第四外周沟槽之间的间隙宽。

4. 发明申请

WO2012120359A2 INSULATED-GATE BIPOLAR TRANSISTOR 审中-公开
标题翻译：绝缘栅双极型晶体管
公开(公告)号：WO2012120359A2
公开(公告)日：2012-09-13
申请号：PCT/IB2012/000418
申请日：2012-03-07
申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA , SAITO, Jun , MACHIDA, Satoru
发明人： SAITO, Jun , MACHIDA, Satoru
IPC分类号： H01L29/739
CPC分类号： H01L29/423 , H01L29/0619 , H01L29/0623 , H01L29/0696 , H01L29/0847 , H01L29/1095 , H01L29/4238 , H01L29/7395 , H01L29/7397
摘要： In an IGBT (10), a trench (70a, 70b) extending in a bent shape to have a corner is formed in an upper surface of a semiconductor substrate. The inside of the trench (70a, 70b) is covered with an insulating film. A gate is placed inside the trench (70a, 70b). An emitter and a collector are formed on an upper surface and a lower surface of the semiconductor substrate, respectively. An emitter region, a body region, a drift region, and a collector region are formed in the semiconductor substrate. The emitter region is formed of an n-type semiconductor, is in contact with the insulating film, and is in ohmic contact with the emitter electrode. The body region is formed of a p-type semiconductor, is in contact with the insulating film below the emitter region, is in contact with the insulating film of an inner corner portion (72-1, 72-2) of the trench (70a, 70b), and is in ohmic contact with the emitter electrode.
摘要翻译：在IGBT（10）中，在半导体衬底的上表面中形成以弯曲的形状延伸以具有拐角的沟槽（70a，70b）。沟槽（70a，70b）的内部被绝缘膜覆盖。栅极放置在沟槽（70a，70b）内。发射极和集电极分别形成在半导体衬底的上表面和下表面上。发射极区域，体区域，漂移区域和集电极区域形成在半导体衬底中。发射极区域由n型半导体形成，与绝缘膜接触，并且与发射极电极欧姆接触。体区域由p型半导体形成，与发射极区域下方的绝缘膜接触，与沟槽70a的内角部分（72-1,72-2）的绝缘膜接触，70b），并与发射极电极欧姆接触。

5. 发明申请

WO2013014943A2 DIODE, SEMICONDUCTOR DEVICE, AND MOSFET 审中-公开
标题翻译：二极管，半导体器件和MOSFET
公开(公告)号：WO2013014943A2
公开(公告)日：2013-01-31
申请号：PCT/JP2012/004804
申请日：2012-07-27
申请人： KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO , TOYOTA JIDOSHA KABUSHIKI KAISHA , YAMASHITA, Yusuke , MACHIDA, Satoru , SUGIYAMA, Takahide , SAITO, Jun
发明人： YAMASHITA, Yusuke , MACHIDA, Satoru , SUGIYAMA, Takahide , SAITO, Jun
IPC分类号： H01L29/872 , H01L29/08
CPC分类号： H01L29/7813 , H01L27/0629 , H01L29/0619 , H01L29/0623 , H01L29/0642 , H01L29/0692 , H01L29/0696 , H01L29/08 , H01L29/0834 , H01L29/0847 , H01L29/0878 , H01L29/1095 , H01L29/1608 , H01L29/20 , H01L29/2003 , H01L29/36 , H01L29/407 , H01L29/41766 , H01L29/7393 , H01L29/7397 , H01L29/7806 , H01L29/7839 , H01L29/8611 , H01L29/872
摘要： Disclosed is a technique capable of reducing loss at the time of switching in a diode. A diode disclosed in the present specification includes a cathode electrode, a cathode region made of a first conductivity type semiconductor, a drift region made of a low concentration first conductivity type semiconductor, an anode region made of a second conductivity type semiconductor, an anode electrode made of metal, a barrier region formed between the drift region and the anode region and made of a first conductivity type semiconductor having a concentration higher than that of the drift region, and a pillar region formed so as to connect the barrier region to the anode electrode and made of a first conductivity type semiconductor having a concentration higher than that of the barrier region. The pillar region and the anode are connected through a Schottky junction.
摘要翻译：公开了能够在二极管切换时减少损耗的技术。本说明书中公开的二极管包括阴极电极，由第一导电类型半导体制成的阴极区域，由低浓度第一导电类型半导体制成的漂移区域，由第二导电类型半导体制成的阳极区域，阳极电极由金属制成的阻挡区域，形成在漂移区域和阳极区域之间并且由具有高于漂移区域的浓度的第一导电型半导体形成的势垒区域和形成为将阻挡区域连接到阳极的柱状区域电极，并且由具有比屏障区域的浓度高的浓度的第一导电型半导体制成。柱区域和阳极通过肖特基结连接。

6. 发明授权

EP1760790B1 SEMICONDUCTOR DEVICE 有权
公开(公告)号：EP1760790B1
公开(公告)日：2019-04-03
申请号：EP05739273.0
申请日：2005-05-12
申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA
发明人： KAWAJI, Sachiko , ISHIKO, Masayasu , SUGIYAMA, Takahide , USUI, Masanori , SAITO, Jun , HOTTA, Koji
IPC分类号： H01L29/739 , H01L29/10 , H01L29/40 , H01L29/06

7. 发明公开

EP2251904A1 DRIVING METHOD FOR REVERSE CONDUCTING SEMICONDUCTOR ELEMENT, SEMICONDUCTOR DEVICE, AND FEEDING DEVICE 失效转让
标题翻译：推动了反向导通半导体元件，半导体装置及进给装置
公开(公告)号：EP2251904A1
公开(公告)日：2010-11-17
申请号：EP09710354.3
申请日：2009-02-02
申请人： Toyota Jidosha Kabushiki Kaisha
发明人： SOENO, Akitaka , SAITO, Jun
IPC分类号： H01L27/04 , H01L21/8234 , H01L27/06 , H01L27/088 , H01L29/739 , H01L29/78 , H02M7/5387
CPC分类号： H01L29/7397 , H01L29/0834 , H03K17/08128 , H03K17/567 , H03K2217/0036 , H03K2217/0045
摘要： A technique for a reverse conducting semiconductor device including an IGBT element domain and a diode element domain that utilize body regions having a mutual impurity concentration, that enables to adjust an injection efficiency of holes or electrons to the diode element domain is provided. When a return current 110 flows in the reverse conducting semiconductor device 20 that uses an NPNP-type IGBT, a second voltage that is higher than a voltage of an emitter electrode 32 is applied to second trench gate electrodes 46 of the diode element domain 24. N-type inversion layers 56 are formed in the periphery of the second trench gate electrodes 46, and the electrons 58 flows therethrough via a first body contact region 35 and a drift region 38 which are of the same n-type. The injection efficiency of the electrons 58 to the return current 110 is increased, and the injection efficiency of the holes 54 is decreased. Due to this, an increase in a reverse recovery current can be prevented, and a switching loss caused in the diode element domain can be decreased.
摘要翻译：一种用于反向导通半导体装置，其包括上，IGBT元件区与二极管元件区的技术做了利用具有共同的杂质浓度的体区域，确实能够调节被提供空穴或电子的二极管元件区的注入效率。当以相反的返回电流110个流动通半导体元件20那样的用途，以NPNP型的IGBT，第二电压没有被比发射极32的电压更高的是施加到第2沟槽栅电极上的二极管元件区24日的46 N型反转层56通过经由第一体接触区35和漂移区38，其是相同的n型的形成于第2沟槽栅电极46，并且电子的周边58个流动那里。的电子58向返回电流110的注入效率增加，并且在孔54的注入效率降低。由于这个原因，以增加其在反向恢复电流可以防止，而在二极管元件区中导致的开关损失可以减小。

8. 发明授权

EP2251904B1 DRIVING METHOD FOR REVERSE CONDUCTING SEMICONDUCTOR ELEMENT, SEMICONDUCTOR DEVICE, AND FEEDING DEVICE 失效转让
公开(公告)号：EP2251904B1
公开(公告)日：2019-01-16
申请号：EP09710354.3
申请日：2009-02-02
申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA
发明人： SOENO, Akitaka , SAITO, Jun
IPC分类号： H01L29/739 , H01L29/78 , H01L27/06 , H03K17/567 , H03K17/0812

9. 发明授权

EP2200081B1 FEEDING DEVICE AND ITS DRIVE METHOD 有权转让
公开(公告)号：EP2200081B1
公开(公告)日：2019-06-26
申请号：EP08831193.1
申请日：2008-08-28
申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA
发明人： SOENO, Akitaka , SAITO, Jun , AMARATUNGA, Gehan Anil Joseph , UDREA, Florin
IPC分类号： H01L29/739 , H01L29/78 , H01L27/06 , H03K17/0812 , H03K17/567

10. 发明公开

EP2684216A2 INSULATED-GATE BIPOLAR TRANSISTOR 有权转让
标题翻译： BIPOLAR绝缘栅晶体管
公开(公告)号：EP2684216A2
公开(公告)日：2014-01-15
申请号：EP12712728.0
申请日：2012-03-07
申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA
发明人： SAITO, Jun , MACHIDA, Satoru
IPC分类号： H01L29/739
CPC分类号： H01L29/423 , H01L29/0619 , H01L29/0623 , H01L29/0696 , H01L29/0847 , H01L29/1095 , H01L29/4238 , H01L29/7395 , H01L29/7397
摘要： In an IGBT, a trench extending in a bent shape to have a corner is formed in an upper surface of a semiconductor substrate. The inside of the trench is covered with an insulating film. A gate is placed inside the trench. An emitter and a collector are formed on an upper surface and a lower surface of the semiconductor substrate, respectively. An emitter region, a body region, a drift region, and a collector region are formed in the semiconductor substrate. The emitter region is formed of an n-type semiconductor, is in contact with the insulating film, and is in ohmic contact with the emitter electrode. The body region is formed of a p-type semiconductor, is in contact with the insulating film below the emitter region, is in contact with the insulating film of an inner corner portion of the trench, and is in ohmic contact with the emitter electrode.

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