基本信息:
- 专利标题： INSULATED GATE TYPE SEMICONDUCTOR DEVICE
- 专利标题（中）：绝缘栅型半导体器件
- 申请号：PCT/JP2015/000522 申请日：2015-02-05
- 公开(公告)号：WO2015145939A1 公开(公告)日：2015-10-01
- 发明人： SAITO, Jun , HAMADA, Kimimori , SOENO, Akitaka , TAKAYA, Hidefumi , AOI, Sachiko , YAMAMOTO, Toshimasa
- 申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA
- 申请人地址： 1, Toyota-cho, Toyota-shi, Aichi 4718571 JP
- 专利权人： TOYOTA JIDOSHA KABUSHIKI KAISHA
- 当前专利权人： TOYOTA JIDOSHA KABUSHIKI KAISHA
- 当前专利权人地址： 1, Toyota-cho, Toyota-shi, Aichi 4718571 JP
- 代理机构： KAI-U PATENT LAW FIRM
- 优先权： JP2014-062009 20140325
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/06
摘要：
An insulating gate type semiconductor device being capable of easily depleting an outer periphery region is provided. The insulating gate type semiconductor device includes: first to fourth outer periphery trenches formed in a front surface of a semiconductor substrate; insulating layers located in the outer periphery trenches; fifth semiconductor regions being of a second conductive type and formed in ranges exposed to bottom surfaces of the outer periphery trenches; and a connection region connecting the fifth semiconductor region exposed to the bottom surface of the second outer periphery trench to the fifth semiconductor region exposed to the bottom surface of the third outer periphery trench. A clearance between the second and third outer periphery trenches is wider than each of a clearance between the first and second outer periphery trenches and a clearance between the third and fourth outer periphery trenches.
摘要（中）：
提供能够容易地耗尽外周区域的绝缘栅型半导体器件。 绝缘栅型半导体器件包括：形成在半导体衬底的前表面中的第一至第四外周沟槽; 位于外周沟槽中的绝缘层; 第五半导体区域是第二导电类型并且形成在暴露于外周沟槽的底表面的范围内; 以及将暴露于第二外周沟槽的底表面的第五半导体区域连接到暴露于第三外周沟槽的底表面的第五半导体区域的连接区域。 第二和第三外周沟槽之间的间隙比第一和第二外周沟槽之间的间隙以及第三和第四外周沟槽之间的间隙宽。
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L29/00 | 专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件 |
| --------H01L29/02 | .按其半导体本体的特征区分的 |
| ----------H01L29/68 | ..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的 |
| ------------H01L29/70 | ...双极器件 |
| --------------H01L29/762 | ....电荷转移器件 |
| ----------------H01L29/78 | .....由绝缘栅产生场效应的 |