发明公开
EP2251904A1 DRIVING METHOD FOR REVERSE CONDUCTING SEMICONDUCTOR ELEMENT, SEMICONDUCTOR DEVICE, AND FEEDING DEVICE
失效 - 权利终止
转让
基本信息:
- 专利标题： DRIVING METHOD FOR REVERSE CONDUCTING SEMICONDUCTOR ELEMENT, SEMICONDUCTOR DEVICE, AND FEEDING DEVICE
- 专利标题（中）：推动了反向导通半导体元件，半导体装置及进给装置
- 申请号：EP09710354.3 申请日：2009-02-02
- 公开(公告)号：EP2251904A1 公开(公告)日：2010-11-17
- 发明人： SOENO, Akitaka , SAITO, Jun
- 申请人： Toyota Jidosha Kabushiki Kaisha
- 申请人地址： 1 Toyota-cho Toyota-shi, Aichi 471-8571 JP
- 专利权人： Toyota Jidosha Kabushiki Kaisha
- 当前专利权人： DENSO CORPORATION, KARIYA-SHI, JP
- 当前专利权人地址： DENSO CORPORATION, KARIYA-SHI, JP
- 代理机构： Intès, Didier Gérard André
- 优先权： JP2008033003 20080214
- 国际公布： WO2009101868 20090820
- 主分类号： H01L27/04
- IPC分类号： H01L27/04 ; H01L21/8234 ; H01L27/06 ; H01L27/088 ; H01L29/739 ; H01L29/78 ; H02M7/5387
摘要：
A technique for a reverse conducting semiconductor device including an IGBT element domain and a diode element domain that utilize body regions having a mutual impurity concentration, that enables to adjust an injection efficiency of holes or electrons to the diode element domain is provided. When a return current 110 flows in the reverse conducting semiconductor device 20 that uses an NPNP-type IGBT, a second voltage that is higher than a voltage of an emitter electrode 32 is applied to second trench gate electrodes 46 of the diode element domain 24. N-type inversion layers 56 are formed in the periphery of the second trench gate electrodes 46, and the electrons 58 flows therethrough via a first body contact region 35 and a drift region 38 which are of the same n-type. The injection efficiency of the electrons 58 to the return current 110 is increased, and the injection efficiency of the holes 54 is decreased. Due to this, an increase in a reverse recovery current can be prevented, and a switching loss caused in the diode element domain can be decreased.
摘要（中）：
一种用于反向导通半导体装置，其包括上，IGBT元件区与二极管元件区的技术做了利用具有共同的杂质浓度的体区域，确实能够调节被提供空穴或电子的二极管元件区的注入效率。 当以相反的返回电流110个流动通半导体元件20那样的用途，以NPNP型的IGBT，第二电压没有被比发射极32的电压更高的是施加到第2沟槽栅电极上的二极管元件区24日的46 N型反转层56通过经由第一体接触区35和漂移区38，其是相同的n型的形成于第2沟槽栅电极46，并且电子的周边58个流动那里。 的电子58向返回电流110的注入效率增加，并且在孔54的注入效率降低。 由于这个原因，以增加其在反向恢复电流可以防止，而在二极管元件区中导致的开关损失可以减小。