基本信息:
- 专利标题： INSULATED-GATE BIPOLAR TRANSISTOR
- 专利标题（中）：BIPOLAR绝缘栅晶体管
- 申请号：EP12712728.0 申请日：2012-03-07
- 公开(公告)号：EP2684216A2 公开(公告)日：2014-01-15
- 发明人： SAITO, Jun , MACHIDA, Satoru
- 申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA
- 申请人地址： 1, Toyota-cho, Toyota-shi, Aichi-ken, 471-8571 JP
- 专利权人： TOYOTA JIDOSHA KABUSHIKI KAISHA
- 当前专利权人： DENSO CORPORATION
- 当前专利权人地址： DENSO CORPORATION
- 代理机构： Intès, Didier Gérard André
- 优先权： JP2011052100 20110309
- 国际公布： WO2012120359 20120913
- 主分类号： H01L29/739
- IPC分类号： H01L29/739
摘要：
In an IGBT, a trench extending in a bent shape to have a corner is formed in an upper surface of a semiconductor substrate. The inside of the trench is covered with an insulating film. A gate is placed inside the trench. An emitter and a collector are formed on an upper surface and a lower surface of the semiconductor substrate, respectively. An emitter region, a body region, a drift region, and a collector region are formed in the semiconductor substrate. The emitter region is formed of an n-type semiconductor, is in contact with the insulating film, and is in ohmic contact with the emitter electrode. The body region is formed of a p-type semiconductor, is in contact with the insulating film below the emitter region, is in contact with the insulating film of an inner corner portion of the trench, and is in ohmic contact with the emitter electrode.
公开/授权文献:
- EP2684216B1 INSULATED-GATE BIPOLAR TRANSISTOR 公开/授权日：2021-10-27
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L29/00 | 专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件 |
| --------H01L29/02 | .按其半导体本体的特征区分的 |
| ----------H01L29/68 | ..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的 |
| ------------H01L29/70 | ...双极器件 |
| --------------H01L29/72 | ....晶体管型器件，如连续响应于所施加的控制信号的 |
| ----------------H01L29/739 | .....受场效应控制的 |