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1. 发明专利

DE4307519C2 未知
公开(公告)号：DE4307519C2
公开(公告)日：1998-01-29
申请号：DE4307519
申请日：1993-03-10
申请人： TOSHIBA CERAMICS CO
发明人： HOTATE SHIROU , YAMAZAKI HIRAKU , SUGAI TERUO , KATO SHIGEO , TAZOE HARUO , KOIKE HIROAKI , INABA TAKESHI , TOYA EIICHI , INOUE SHINICHI
IPC分类号： G02B5/08 , G21K1/06 , H05H13/04 , H05H7/00
摘要： A mirror for SOR includes a base (1) made of a heat resistant ceramic material having a surface, a first SiC coating (2, 3) formed on the surface of the base (1), which has a first smoothed surface, and a second SiC coating (4, 5) formed on the first smoothed surface of the first SiC coating (2, 3), which has a second smoothed surface. A third SiC coating can be formed on the smoothed surface of the second SiC coating (4).

2. 发明专利

JPH04206154A CARBONIZATION METHOD OF ELECTRODE SUBSTRATE FOR FUEL CELL 失效
公开(公告)号：JPH04206154A
公开(公告)日：1992-07-28
申请号：JP32817590
申请日：1990-11-28
申请人： TOSHIBA CORP , TOSHIBA CERAMICS CO
发明人： KINOSHITA SUSUMU , KOJIMA SUSUMU , IYASU KYOTARO , NARA HIDEYUKI , KATO SHIGEO
IPC分类号： H01M4/88
摘要： PURPOSE:To prevent oxidization of a substrate accurately while carrying out carbonization and baking by carrying out carbonization and baking simultaneously with an electrode substrate for a fuel cell on an object easy to be oxidized at the temperature lower than the temperature the substrate starts to be oxidized together. CONSTITUTION:An electrode substrate body 1 for a fuel cell is constituted in such a way that a sheet like paper oxidized at the temperature lower than the temperature a substrate starts to be oxidized is wound round an object formed by laminating plural number of electrode substrates for the fuel cell and it is wrapped round by means of aluminum foil. Next, a body 1 is housed inside a body 2A of a graphite baking case 2. After this, a cap 2B is covered on the body 2A of the case 2 so as to arrange inside a carbonization furnace 3 under a condition that the coke 4 is filled around it. Carbonization and baking are carried out at a prescribed maximum ultimate temperature. Thereby, the paper and the aluminum foil are united with residual oxygen in the case 2 and oxidized so that oxidization of the electrode substrate can be prevented.

3. 发明专利

DE4307519A1 Reflector for synchrotron radiation 未知
公开(公告)号：DE4307519A1
公开(公告)日：1994-09-15
申请号：DE4307519
申请日：1993-03-10
申请人： TOSHIBA CERAMICS CO
发明人： HOTATE SHIROU , YAMAZAKI HIRAKU , SUGAI TERUO , KATO SHIGEO , TAZOE HARUO , KOIKE HIROAKI , INABA TAKESHI , TOYA EIICHI , INOUE SHINICHI
IPC分类号： G02B5/08 , G21K1/06 , H05H13/04 , H05H7/00
摘要： A reflector for synchrotron radiation (SOR) has a base (10) made of a heat-proof ceramic material. A first surface coating layer (20) is moulded on one surface (12) of the base (10) and has a first surface. To improve the reflection capability of the reflector it is proposed that the first surface of the first SiC surface coating layer (20) is a first smoothed surface (24) and that at least one second further SiC surface coating layer (40), whose outer surface (44) is smoothed, is formed on the smoothed surface (24) (Fig. 2).

4. 发明专利

JPH0829984B2 失效
公开(公告)号：JPH0829984B2
公开(公告)日：1996-03-27
申请号：JP18472486
申请日：1986-08-06
申请人： TOSHIBA CERAMICS CO
发明人： SUGAI TERUO , KATO SHIGEO , SAKASHITA ISAO , IWAZAWA TOSHIKI , TAZOE HARUO
IPC分类号： H01L21/31 , C01B31/02 , C04B35/52 , C23C16/50 , H01L21/205 , H01L21/22

5. 发明专利

JPH0758039A SUSCEPTOR 失效
公开(公告)号：JPH0758039A
公开(公告)日：1995-03-03
申请号：JP22666693
申请日：1993-08-20
申请人： TOSHIBA CERAMICS CO
发明人： SOTODANI EIICHI , SUMIYA MASAYUKI , AMANO MASAMI , ICHIKAWA HIROYUKI , KATO SHIGEO , ITO YUKIO
IPC分类号： C23C14/50 , H01L21/205 , H01L21/31 , H01L21/68 , H01L21/683
摘要： PURPOSE:To provide a susceptor capable of keeping a semiconductor wafer in a good condition by preventing damage or any spotted traces on the back of the semiconductor wafer. CONSTITUTION:In a susceptor 1 including a counterbore part 2 for supporting a flat portion of a semiconductor wafer, at least three parts 3 for supporting time semiconductor wafer are provided along a predetermined circumference 5 in the counterbore part.

6. 发明专利

JPH05226452A WAFER TRANSFER JIG 失效
公开(公告)号：JPH05226452A
公开(公告)日：1993-09-03
申请号：JP2376592
申请日：1992-02-10
申请人： TOSHIBA CERAMICS CO
发明人： SAKAI YUKIFUMI , TAKIGAWA TAKASHI , INOUE SHINICHI , HIRAI SHIGEYUKI , KATO SHIGEO
IPC分类号： B65G49/07 , H01L21/677 , H01L21/68
摘要： PURPOSE:To enable a jig to be less warped and to decrease particles generated from the jig by a method wherein a base where a wafer is placed is formed of atmospheric sintered SiC, and a part of the base coming into contact with the wafer is covered with an Si-containing film. CONSTITUTION:A wafer transferring jig 10 is formed of a rectangular platelike base 11 of atmospheric sintered SiC, where a groove 12 on which a semiconductor wafer W is placed is provided to the upside of the base 11. When the semiconductor wafer W is placed inside the groove 12 from above, it is easily and smoothly placed and fixed and moreover surely positioned and held by arc- shaped fixing walls 13 and 14. All the contact area of the groove 12 with the wafer W is covered with an Si-containing film 15. Therefore, when the wafer is mounted on or dismounted from the jig 10, particles are hardly produced. As the base 11 is formed of atmospheric sintered SiC of high toughness, the jig 10 is hardly warped by the weight of the wafer W.

7. 发明专利

JPH04199614A VERTICAL TYPE VAPOR GROWTH SUSCEPTOR 失效
公开(公告)号：JPH04199614A
公开(公告)日：1992-07-20
申请号：JP33123490
申请日：1990-11-29
申请人： TOSHIBA CERAMICS CO
发明人： HOTATE SHIRO , YAMAZAKI HIROSHI , SUGAI TERUO , KATO SHIGEO , TAZOE HARUO , KOIKE HIROAKI
IPC分类号： H01L21/205 , H01L21/31
摘要： PURPOSE:To contrive improvement in the yield of production by a method wherein the carbon substrate, having a semiconductor wafer receptacle recessed part, is coated with an SiC film, and an SiC part, which is protruding toward the internal part from the surface, is provided in the carbon substrate located on the bottom part of the recessed part. CONSTITUTION:A plurality of recessed parts 3, having concave spherical bottom face where a semiconductor wafer 2 is placed, are provided on a round plate-shaped carbon substrate 1 consisting of isotropic carbon and the like on which a high frequency induction heating operation can be conducted. A carbon substrate 1 coated with an SiC film 4 using a CVD method in order to prevent discharge of occlusion gas from the carbon substrate 1, and an SiC section 5, which is protruding toward the internal part from the surface is provided in the carbon substrate 1 at the bottom part of the recessed part 3. Accordingly, the generation of high frequency induction current on the SiC part when high frequency is applied, is suppressed by the generation of a high frequency induction current on the carbon substrate on the circumference of the SiC part. As a result, the heat generated at the bottom part of the second section becomes smaller than the heat generated on the circumferential part of the recessed part, no warpage is occurred on the semiconductor wafer when a vapor growth reaction is conducted by uniformly heating the semiconductor wafer which is placed on the recessed part, and the yield of production can be improved.

8. 发明专利

JPH03199195A ETCHING METHOD FOR SUSCEPTOR 失效
公开(公告)号：JPH03199195A
公开(公告)日：1991-08-30
申请号：JP33644489
申请日：1989-12-27
申请人： TOSHIBA CERAMICS CO
发明人： KATO SHIGEO , TAZOE HARUO , TAN NOBUYUKI
IPC分类号： C30B25/12 , C23F1/12 , H01L21/31
摘要： PURPOSE:To suppress the generation of pinholes by imposing the spare wafers of the same shape as the shape of wafers to be used in an epitaxy stage on the spot facing parts of a susceptor. CONSTITUTION:The spare wafers made of SiC of the same size and shape as the size and shape of the normal Si wafers to be used in the epitaxy stage are set in all the spot facing parts of the susceptor. The entire part of the susceptor is thereafter subjected to an etching treatment by gaseous HCl and the Si deposited in the parts exclusive of the spot facing parts is removed. The susceptor with which pinholes are not admitted in the spot facing parts is obtd.

9. 发明专利

JPH03185820A MEMBER FOR TREATING SEMICONDUCTOR 失效
公开(公告)号：JPH03185820A
公开(公告)日：1991-08-13
申请号：JP32386189
申请日：1989-12-15
申请人： TOSHIBA CERAMICS CO
发明人： KATO SHIGEO , TAZOE HARUO , TAN NOBUYUKI , ICHIKAWA HIROYUKI , MATSUDA SHOJI
IPC分类号： H01L21/22 , H01L21/205
摘要： PURPOSE:To increase thermal shock resistance and prevent generation of cracks of SiC coating, by forming the surface of carbon base material by using a porous SiC coating layer and a dense SiC coating layer on the surface thereof, and specifying the void content and the thickness of the porous SiC coating layer. CONSTITUTION:A dense SiC coating is not directly formed on the surface of carbon base material. Firstly a porous SiC coating layer is formed, and thereon the dense SiC coating layer is formed. The thickness of the porous SiC coating layer is made 5-30mum. When the thickness is smaller than 5mum, the stress caused by thermal shock can not be sufficiently absorbed. When the thickness exceeds 30mum, thermal conductivity changes in the case of a susceptor. The void content is made 0.5-10%. When the void content is smaller than 0.5%, the thermal shock resistance is decreased. When the void content exceeds 10%, the adhesion between the base material and the dense SiC Iayer is decreased.

10. 发明专利

JPH02225312A PURIFICATION OF CARBON-GRAPHITE MATERIAL 失效
公开(公告)号：JPH02225312A
公开(公告)日：1990-09-07
申请号：JP1108889
申请日：1989-01-20
申请人： TOSHIBA CERAMICS CO
发明人： NISHIMURA MASANORI , KATO SHIGEO , NONAMI HIDEMITSU , TAN NOBUYUKI
IPC分类号： C01B31/04 , H01L21/208 , H01L21/22
摘要： PURPOSE:To unnecessitate to again subject a carbon.graphite material to a degasifying treatment on the use of the carbon.graphite material in a semiconductor production process and enable to improve the luminous characteristics of the compound semiconductor on the employment of the carbon.graphite material in a liquid phase epitaxy by consistently applying an impurity-removing treatment, a hydrogen baking treatment and a vacuum degasification treatment to the carbon.graphite material. CONSTITUTION:A carbon.graphite material is subjected to an impurity-removing treatment using a halogen gas or a gas containing the halogen at a high temperature, to a hydrogen baking treatment at a high temperature and subsequently to a vacuum degasification treatment at a high temperature. Since the impurity- removing treatment, the hydrogen baking treatment and the vacuum degasification treatment are consistently carried out in this order and the hydrogen baking treatment is performed prior to the vacuum degasification treatment, the rate of oxygen compounds in the released gas can be reduced by the treatments at the relatively low temperature and vacuum degree.

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