专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JPH03199195A ETCHING METHOD FOR SUSCEPTOR 失效
公开(公告)号：JPH03199195A
公开(公告)日：1991-08-30
申请号：JP33644489
申请日：1989-12-27
申请人： TOSHIBA CERAMICS CO
发明人： KATO SHIGEO , TAZOE HARUO , TAN NOBUYUKI
IPC分类号： C30B25/12 , C23F1/12 , H01L21/31
摘要： PURPOSE:To suppress the generation of pinholes by imposing the spare wafers of the same shape as the shape of wafers to be used in an epitaxy stage on the spot facing parts of a susceptor. CONSTITUTION:The spare wafers made of SiC of the same size and shape as the size and shape of the normal Si wafers to be used in the epitaxy stage are set in all the spot facing parts of the susceptor. The entire part of the susceptor is thereafter subjected to an etching treatment by gaseous HCl and the Si deposited in the parts exclusive of the spot facing parts is removed. The susceptor with which pinholes are not admitted in the spot facing parts is obtd.

2. 发明专利

JPH03185820A MEMBER FOR TREATING SEMICONDUCTOR 失效
公开(公告)号：JPH03185820A
公开(公告)日：1991-08-13
申请号：JP32386189
申请日：1989-12-15
申请人： TOSHIBA CERAMICS CO
发明人： KATO SHIGEO , TAZOE HARUO , TAN NOBUYUKI , ICHIKAWA HIROYUKI , MATSUDA SHOJI
IPC分类号： H01L21/22 , H01L21/205
摘要： PURPOSE:To increase thermal shock resistance and prevent generation of cracks of SiC coating, by forming the surface of carbon base material by using a porous SiC coating layer and a dense SiC coating layer on the surface thereof, and specifying the void content and the thickness of the porous SiC coating layer. CONSTITUTION:A dense SiC coating is not directly formed on the surface of carbon base material. Firstly a porous SiC coating layer is formed, and thereon the dense SiC coating layer is formed. The thickness of the porous SiC coating layer is made 5-30mum. When the thickness is smaller than 5mum, the stress caused by thermal shock can not be sufficiently absorbed. When the thickness exceeds 30mum, thermal conductivity changes in the case of a susceptor. The void content is made 0.5-10%. When the void content is smaller than 0.5%, the thermal shock resistance is decreased. When the void content exceeds 10%, the adhesion between the base material and the dense SiC Iayer is decreased.

3. 发明专利

JPH02225312A PURIFICATION OF CARBON-GRAPHITE MATERIAL 失效
公开(公告)号：JPH02225312A
公开(公告)日：1990-09-07
申请号：JP1108889
申请日：1989-01-20
申请人： TOSHIBA CERAMICS CO
发明人： NISHIMURA MASANORI , KATO SHIGEO , NONAMI HIDEMITSU , TAN NOBUYUKI
IPC分类号： C01B31/04 , H01L21/208 , H01L21/22
摘要： PURPOSE:To unnecessitate to again subject a carbon.graphite material to a degasifying treatment on the use of the carbon.graphite material in a semiconductor production process and enable to improve the luminous characteristics of the compound semiconductor on the employment of the carbon.graphite material in a liquid phase epitaxy by consistently applying an impurity-removing treatment, a hydrogen baking treatment and a vacuum degasification treatment to the carbon.graphite material. CONSTITUTION:A carbon.graphite material is subjected to an impurity-removing treatment using a halogen gas or a gas containing the halogen at a high temperature, to a hydrogen baking treatment at a high temperature and subsequently to a vacuum degasification treatment at a high temperature. Since the impurity- removing treatment, the hydrogen baking treatment and the vacuum degasification treatment are consistently carried out in this order and the hydrogen baking treatment is performed prior to the vacuum degasification treatment, the rate of oxygen compounds in the released gas can be reduced by the treatments at the relatively low temperature and vacuum degree.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式