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1. 发明专利

DE4307519C2 未知
公开(公告)号：DE4307519C2
公开(公告)日：1998-01-29
申请号：DE4307519
申请日：1993-03-10
申请人： TOSHIBA CERAMICS CO
发明人： HOTATE SHIROU , YAMAZAKI HIRAKU , SUGAI TERUO , KATO SHIGEO , TAZOE HARUO , KOIKE HIROAKI , INABA TAKESHI , TOYA EIICHI , INOUE SHINICHI
IPC分类号： G02B5/08 , G21K1/06 , H05H13/04 , H05H7/00
摘要： A mirror for SOR includes a base (1) made of a heat resistant ceramic material having a surface, a first SiC coating (2, 3) formed on the surface of the base (1), which has a first smoothed surface, and a second SiC coating (4, 5) formed on the first smoothed surface of the first SiC coating (2, 3), which has a second smoothed surface. A third SiC coating can be formed on the smoothed surface of the second SiC coating (4).

2. 发明专利

DE4307519A1 Reflector for synchrotron radiation 未知
公开(公告)号：DE4307519A1
公开(公告)日：1994-09-15
申请号：DE4307519
申请日：1993-03-10
申请人： TOSHIBA CERAMICS CO
发明人： HOTATE SHIROU , YAMAZAKI HIRAKU , SUGAI TERUO , KATO SHIGEO , TAZOE HARUO , KOIKE HIROAKI , INABA TAKESHI , TOYA EIICHI , INOUE SHINICHI
IPC分类号： G02B5/08 , G21K1/06 , H05H13/04 , H05H7/00
摘要： A reflector for synchrotron radiation (SOR) has a base (10) made of a heat-proof ceramic material. A first surface coating layer (20) is moulded on one surface (12) of the base (10) and has a first surface. To improve the reflection capability of the reflector it is proposed that the first surface of the first SiC surface coating layer (20) is a first smoothed surface (24) and that at least one second further SiC surface coating layer (40), whose outer surface (44) is smoothed, is formed on the smoothed surface (24) (Fig. 2).

3. 发明专利

JPH03199196A SUSCEPTOR 失效
公开(公告)号：JPH03199196A
公开(公告)日：1991-08-30
申请号：JP33644589
申请日：1989-12-27
申请人： TOSHIBA CERAMICS CO
发明人： TAZOE HARUO , KATO SHIGEO , MATSUDA SHOJI
IPC分类号： C30B25/12 , C30B29/06 , H01L21/205
摘要： PURPOSE:To suppress the generation of pinholes by freely attachably and detachably providing a spot facing member provided with a spot facing part to be imposed with a wafer on the surface of a susceptor body. CONSTITUTION:SiC coating 3 having 50 to 200mum thickness is formed on the surface of the susceptor body 1 constituted of a carbon base material. The spot facing member 4 is freely attachably and detachably mounted to the susceptor body 1. The spot facing member 4 and the recessed part 2 of the susceptor body 1 are formed to the completely corresponding shape and there are no spacings at all between both. The spot facing member 4 constituted of only the SiC is formed to the tray shape of approximately the same thickness over the entire part. The spot facing member 4 is removed from the susceptor body 1 and is subjected to an etching treatment at the time of etching and therefore, the spot facing member 4 is not etched. The generation of the pinholes is consequently averted. The spot facing member 4 is made of single material and, therefore, the pinholes are not generated in the spot facing part 6 even if the spot facing member 4 is held mounted in the susceptor 1 and is subjected to the etching treatment in this state.

4. 发明专利

JPH06191873A QUARTZ GLASS FURNACE CORE TUBE FOR TREATMENT OF SEMICONDUCTOR WAFER 失效
公开(公告)号：JPH06191873A
公开(公告)日：1994-07-12
申请号：JP35793592
申请日：1992-12-25
申请人： TOSHIBA CERAMICS CO
发明人： TAZOE HARUO , NAGATA TOMOHARU , URAHASHI TOSHIAKI , TSUYUKI TATSUYA , UESHIMA NOBUYUKI
IPC分类号： C03C3/06 , H01L21/22
摘要： PURPOSE:To provide a furnace core tube having excellent strength at high temp. with which semiconductor wafers to be treated can be stably heat-treated at high thermal efficiency without contamination of the wafers even when the core is repeatedly used for a long time. CONSTITUTION:This furnace core tube consists of quartz glass and used for treatment of semiconductor wafers. The tube consists of at least two layers. The innermost layer has thickness of 5-35% total thickness of the core tube and consists of synthesized quartz glass having 1000-2000ppm OH group content. The outer layers formed on the outer surface of the innermost layer consist of high purity quartz glass.

5. 发明专利

JPH04158298A REFLECTING MIRROR FOR SYNCHROTRON RADIATION 失效
公开(公告)号：JPH04158298A
公开(公告)日：1992-06-01
申请号：JP28192290
申请日：1990-10-22
申请人： TOSHIBA CERAMICS CO
发明人： HOTATE SHIRO , YAMAZAKI HIROSHI , SUGAI TERUO , KATO SHIGEO , TAZOE HARUO , KOIKE HIROAKI
IPC分类号： G21K1/06
摘要： PURPOSE:To obtain a reflecting mirror of which reflectivity deterioration is of rather a small rate even through it is irradiated with high energy synchrotron orbit radiation (SOR) by coating a heat resistive ceramic base material with an SiC film and also a mirror surface thereof with a carbon film having a specific thickness. CONSTITUTION:A reflecting mirror is made of a surface of a heat resistive ceramic base material 1 coated with an SiC film 2 by a CVD method, and a mirror surface thereof coated with a carbon film 3 of at least 2 to 20 mum thickness by a CVD method, after the surface of the SiC film is optically polished to attain surface roughness Rms of 10Angstrom , for instance. The carbon film 3 can be obtained by depositting a decom posed and excited carbon from a gas such as a methane and the like, and a hydrogen, which are to be a carbon source using a method such as a microwave discharge, a pyrolysis and so on. The carbon film of less than 2 mum thickness can not fully release heat generated on the mirror surface. to outside, so that the SiC film 2 is deformed by the stress and the reflectivity goes down. On the other hand, when the thickness is over 20mum, carbon grain size of the carbon film 3 gets larger even though the surface of base SiC film is smooth enough and therewith the surface roughness increases to deteriorate the reflectivity.

6. 发明专利

JPH03246931A SUSCEPTOR 失效
公开(公告)号：JPH03246931A
公开(公告)日：1991-11-05
申请号：JP4236490
申请日：1990-02-26
申请人： TOSHIBA CERAMICS CO
发明人： HOTATE SHIRO , YAMAZAKI HIROSHI , SUGAI TERUO , TAZOE HARUO
IPC分类号： H01L21/205 , H01L21/31
摘要： PURPOSE:To improve the quality of a wafer and lengthen its life, by providing an upper plate and a lower plate constituted of carbon molded substratum containing carbon fiber, forming hollow parts between the upper and the lower plates, and coating the surfaces of the upper and the lower plates with SiC films. CONSTITUTION:A susceptor 10 is constituted of an upper plate 9 and a lower plate 8. The plates 9 and 8 are composed of carbon molded substratum containing carbon fiber. The surfaces are coated with SiC films. The plate 9 and the plate 8 are bonded with thermosetting resin based adhesive agent. Gaps (hollow parts) 6 bordered by ribs 7 are formed between the plates 9 and 8, and a holes 12 lead to the gaps 6. That is, by making the inside of the susceptor 10 hollow, temperature irregularities of a wafer mounting surface of the susceptor upper surface can be reduced, so that the fraction defective of wafer can de decreased. By coating the inner and the outer surfaces of the hollow susceptor substratum with SiC films, the generation of impurities gas is restrained, and the fraction defective can be further decreased. When holes are formed in the lower surface of the carbon substratum the influence of the impurities gas can be further decreased.

7. 发明专利

JPH0587991A MIRROR FOR SOR 失效
公开(公告)号：JPH0587991A
公开(公告)日：1993-04-09
申请号：JP27833091
申请日：1991-09-30
申请人： TOSHIBA CERAMICS CO
发明人： HOTATE SHIRO , YAMAZAKI HIROSHI , SUGAI TERUO , KATO SHIGEO , TAZOE HARUO , KOIKE HIROAKI , INABA TAKESHI , SOTODANI EIICHI , INOUE SHINICHI
IPC分类号： G02B5/08 , G21K1/06 , H05H13/04
摘要： PURPOSE:To improve reflectance by coating the surface of an heat-resistance ceramic base material with chemical vapor deposition (CVD) method and forming at least two layers of silicon carbide (SiC) with a necessary thickness which is polished on the upper surface. CONSTITUTION:On the surface of SiC base material 1 with a rectangular plate shape, an SiC film 2 is coated by CVD method and polishing is applied to the reflection surface to finish an SiC film 3. On the upper surface of the SiC film 3, an SiC film is coated similarly by CVD method and a mirror polishing is applied to the upper surface to be a reflection surface to finish an SiC film 4. That is, two polished SiC films 3, 4 are structured on the reflection surface of the SiC base material 1. Therefore, thanks to the polish of the upper surface of the lower layer SiC film 1, 2, the crystal growth and anisotropy of the upper SiC film are suppressed and flaw is reduced in spite of thick film as a whole. Thus, reflectance is drastically improved.

8. 发明专利

JPH0426576A SILICON CARBIDE COATED CARBON PRODUCT AND PRODUCTION THEREOF 失效
公开(公告)号：JPH0426576A
公开(公告)日：1992-01-29
申请号：JP13109990
申请日：1990-05-21
申请人： TOSHIBA CERAMICS CO
发明人： HOTATE SHIRO , TAZOE HARUO , YAMAZAKI HIROSHI , SUGAI TERUO
IPC分类号： C04B41/87 , C04B35/52
摘要： PURPOSE:To prolong the service life of a product by successively heat-treating a carbon substrate in an atmosphere contg. gaseous SiO and in an atmosphere contg. gaseous SiO and CO. CONSTITUTION:A carbon substrate 1 such as a graphite substrate formed into a desired shape is heated to a prescribed temp. in a reaction furnace, gaseous SiO as a reactive gas and gaseous N2 as a carrier gas are fed and the gaseous SiO is allowed to react with the carbon substrate 1 to form a C-SiC layer 2 of 100-5,000mum thickness contg. dispersed SiO as a surface layer. The substrate 1 is then heated to a higher temp., gaseous SiO and CO as reactive gases and gaseous N2 as a carrier gas are fed and an SiC film 3 composed of SiC crystals is formed on the layer 2. An SiC coated carbon product inhibiting the cracking of the SiC film 3 is obtd.

9. 发明专利

JPH03291916A SUSCEPTOR 失效
公开(公告)号：JPH03291916A
公开(公告)日：1991-12-24
申请号：JP9227690
申请日：1990-04-09
申请人： TOSHIBA CERAMICS CO
发明人： HOTATE SHIRO , YAMAZAKI HIROSHI , SUGAI TERUO , TAZOE HARUO
IPC分类号： H01L21/683 , H01L21/205 , H01L21/68
摘要： PURPOSE:To obtain a susceptor which is not damaged by cracks which may be generated in a step part while susceptor retaining is performed, by forming the step part of the susceptor in the manner in which the wall thickness becomes constant from a main body part. CONSTITUTION:A step part 11 stretched from the main body 10a of a susceptor 10 for a member 15 for retaining the susceptor is mounted and retained, and vapor phase epitaxy is performed on a wafer W mounted on the main body part 10a of the susceptor 10 in a vertical type vapor growth system, in which the step part 11 of the susceptor is so formed that the wall thickness D becomes constant from the main body part 10a. For example, the thickness D of the step part 11 of the susceptor 10 is made equal to the thickness of the main body part 10a of the susceptor 10, and the shape is so changed that the thickness of the main body part 10a of the susceptor 10 or the wall thickness does not change also at the step part 11. That is, the thickness in the vertical direction at the transition part 25 of the step part 11 is made equal to the same D. The lower surface 30 of the step part 11 is retained and fixed by a flange part 16 of the member 15 for retaining the susceptor.

10. 发明专利

JPH03199377A MEMBER FOR TREATING SEMICONDUCTOR 失效
公开(公告)号：JPH03199377A
公开(公告)日：1991-08-30
申请号：JP33644689
申请日：1989-12-27
申请人： TOSHIBA CERAMICS CO
发明人： KATO SHIGEO , TAZOE HARUO , ICHIKAWA HIROYUKI
IPC分类号： C30B25/12 , C23C16/32 , C23C16/42 , C23C16/44 , H01L21/205
摘要： PURPOSE:To provide a member for treating a semiconductor having superior corrosion resistance by forming an SiC coating film composed of alpha-SiC and beta-SiC or made of only alpha-SiC on the surface of a carbon substrate. CONSTITUTION:An SiC coating film composed of >=50% alpha-SiC and beta-SiC is formed on the surface of the carbon substrate of a member for treating a semiconductor. The coating film is dense and rigid. Especially when the coating film is made of only alpha-SiC, it has excellent corrosion resistance to gaseous HCl.

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