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1. 发明专利

JPH03199196A SUSCEPTOR 失效
公开(公告)号：JPH03199196A
公开(公告)日：1991-08-30
申请号：JP33644589
申请日：1989-12-27
申请人： TOSHIBA CERAMICS CO
发明人： TAZOE HARUO , KATO SHIGEO , MATSUDA SHOJI
IPC分类号： C30B25/12 , C30B29/06 , H01L21/205
摘要： PURPOSE:To suppress the generation of pinholes by freely attachably and detachably providing a spot facing member provided with a spot facing part to be imposed with a wafer on the surface of a susceptor body. CONSTITUTION:SiC coating 3 having 50 to 200mum thickness is formed on the surface of the susceptor body 1 constituted of a carbon base material. The spot facing member 4 is freely attachably and detachably mounted to the susceptor body 1. The spot facing member 4 and the recessed part 2 of the susceptor body 1 are formed to the completely corresponding shape and there are no spacings at all between both. The spot facing member 4 constituted of only the SiC is formed to the tray shape of approximately the same thickness over the entire part. The spot facing member 4 is removed from the susceptor body 1 and is subjected to an etching treatment at the time of etching and therefore, the spot facing member 4 is not etched. The generation of the pinholes is consequently averted. The spot facing member 4 is made of single material and, therefore, the pinholes are not generated in the spot facing part 6 even if the spot facing member 4 is held mounted in the susceptor 1 and is subjected to the etching treatment in this state.

2. 发明专利

JPH03185820A MEMBER FOR TREATING SEMICONDUCTOR 失效
公开(公告)号：JPH03185820A
公开(公告)日：1991-08-13
申请号：JP32386189
申请日：1989-12-15
申请人： TOSHIBA CERAMICS CO
发明人： KATO SHIGEO , TAZOE HARUO , TAN NOBUYUKI , ICHIKAWA HIROYUKI , MATSUDA SHOJI
IPC分类号： H01L21/22 , H01L21/205
摘要： PURPOSE:To increase thermal shock resistance and prevent generation of cracks of SiC coating, by forming the surface of carbon base material by using a porous SiC coating layer and a dense SiC coating layer on the surface thereof, and specifying the void content and the thickness of the porous SiC coating layer. CONSTITUTION:A dense SiC coating is not directly formed on the surface of carbon base material. Firstly a porous SiC coating layer is formed, and thereon the dense SiC coating layer is formed. The thickness of the porous SiC coating layer is made 5-30mum. When the thickness is smaller than 5mum, the stress caused by thermal shock can not be sufficiently absorbed. When the thickness exceeds 30mum, thermal conductivity changes in the case of a susceptor. The void content is made 0.5-10%. When the void content is smaller than 0.5%, the thermal shock resistance is decreased. When the void content exceeds 10%, the adhesion between the base material and the dense SiC Iayer is decreased.

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