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1. 发明专利

JP2013143548A Manufacturing method for magnetic memory 审中-公开
标题翻译：磁记忆的制造方法
公开(公告)号：JP2013143548A
公开(公告)日：2013-07-22
申请号：JP2012004248
申请日：2012-01-12
申请人： Toshiba Corp , 株式会社東芝
发明人： YOSHIKAWA MASAHISA , SEDO SATOSHI , HARAKAWA HIDEAKI
IPC分类号： H01L21/8246 , H01L27/105 , H01L29/82 , H01L43/08 , H01L43/12
摘要： PROBLEM TO BE SOLVED: To achieve an exposure step of a magnetic storage element with excellent controllability.SOLUTION: A manufacturing method for magnetic memory includes the steps of: forming a magnetic storage element film 41 on a lower electrode 40; forming a mask layer 42 on the magnetic storage element film 41; processing the magnetic storage element film 41 using the mask layer 42; covering the processed magnetic storage element film 41 by a protection film 43; forming a high ionization rate film 44 on the protection film 43; depositing an interlayer insulating film 25 on the high ionization rate film 44; exposing the high ionization rate film 44 by thinning the interlayer insulating film 25; exposing the mask layer 42 by etching the high ionization rate film 44 and the protection film 43; and forming an upper electrode 45 on the mask layer 42.
摘要翻译：要解决的问题：实现具有优异的可控性的磁存储元件的曝光步骤。解决方案：一种磁存储器的制造方法，包括以下步骤：在下电极40上形成磁存储元件膜41; 在磁存储元件膜41上形成掩模层42; 使用掩模层42处理磁存储元件膜41; 用保护膜43覆盖处理后的磁存储元件膜41; 在保护膜43上形成高电离率膜44; 在高电离率膜44上沉积层间绝缘膜25; 通过使层间绝缘膜25变薄而暴露高电离率膜44; 通过蚀刻高电离率膜44和保护膜43来暴露掩模层42; 并在掩模层42上形成上电极45。

2. 发明专利

JP2010021580A Magneto-resistance effect device, magnetic random access memory, electronic card, electronic apparatus, production process of magneto-resistance effect device, and production process of magnetic random access memory 有权
标题翻译：磁阻效应器件，磁性随机存取存储器，电子卡，电子设备，磁阻效应器件的生产过程以及磁性随机访问存储器的生产过程
公开(公告)号：JP2010021580A
公开(公告)日：2010-01-28
申请号：JP2009242854
申请日：2009-10-21
申请人： Toshiba Corp , 株式会社東芝
发明人： NAGASE TOSHIHIKO , YOSHIKAWA MASAHISA , KITAGAWA EIJI , NAKAYAMA MASAHIKO , KAI TADASHI , KISHI TATSUYA , YODA HIROAKI
IPC分类号： H01L43/08 , H01L21/8246 , H01L27/105 , H01L29/82 , H01L43/10 , H01L43/12
摘要： PROBLEM TO BE SOLVED: To attain a large capacity while maintaining a high thermal disturbance resistance of bit information even in microfabrication. SOLUTION: The magneto-resistance effect device includes a non-magnetic layer 13 between a recording layer 11 having vertical magnetization and a fixed layer 12, a magnetic metal layer 18 between the non-magnetic layer 13 and the fixed layer 12, and a magnetic metal layer 19 between the non-magnetic layer 13 and the recording layer 11. The non-magnetic layer 13 includes MgO with the (001) plane oriented. The magnetic metal layers 18, 19 comprise a magnetic material with the (001) plane oriented, selected from the group consisting of Co, Fe, a Co-Fe alloy, and a Fe-Ni alloy. At least one of the recording layer 11 and the fixed layer 12 includes a layer including at least one selected from the group consisting of Fe, Co and Ni and a layer including at least one selected from the group consisting of Cr, Pt, Pd, Ir, Rh, Ru, Os, Re, Au and Cu laminated alternately. The dumping constant of the magnetic metal layer 19 is smaller than that of the recording layer 11. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：即使在微细加工中，也能够保持比特信息的高耐热干扰性而获得大容量。解决方案：磁阻效应器件包括具有垂直磁化的记录层11和固定层12之间的非磁性层13，非磁性层13和固定层12之间的磁性金属层18，以及非磁性层13和记录层11之间的磁性金属层19.非磁性层13包括（001）面取向的MgO。磁性金属层18,19包括从（001）面取向的磁性材料，其选自Co，Fe，Co-Fe合金和Fe-Ni合金。记录层11和固定层12中的至少一个包括含有选自Fe，Co和Ni中的至少一种的层和包含选自Cr，Pt，Pd， Ir，Rh，Ru，Os，Re，Au和Cu交替层压。磁性金属层19的倾倒常数小于记录层11的倾倒常数。（C）2010，JPO＆INPIT

3. 发明专利

JP2009239120A Magnetoresistive element, and magnetic memory 有权
标题翻译：磁性元件和磁记忆
公开(公告)号：JP2009239120A
公开(公告)日：2009-10-15
申请号：JP2008084938
申请日：2008-03-27
申请人： Toshiba Corp , 株式会社東芝
发明人： KITAGAWA EIJI , YOSHIKAWA MASAHISA , NAGASE TOSHIHIKO , DAIBO TATATOMI , NAGAMINE MAKOTO , NISHIYAMA KATSUYA , KISHI TATSUYA , YODA HIROAKI
IPC分类号： H01L43/08 , G11C11/15 , H01F10/16 , H01F10/26 , H01L21/8246 , H01L27/105 , H01L43/10
CPC分类号： H01L43/08 , G11C11/161 , H01L27/222
摘要： PROBLEM TO BE SOLVED: To reduce variations in inversion current density upon magnetic reversal.
SOLUTION: A magnetoresistive element 10 includes an underlying layer 12 having a cubic or tetragonal crystal structure oriented in a (001) plane, a recording layer 13 provided on the underlying layer 12, having magnetic anisotropy perpendicular to a film surface, and having an fct (face-centered tetragonal) structure oriented in a (001) plane, a non-magnetic layer 14 provided on the recording layer 13, and a reference layer 15 provided on the non-magnetic layer 14, and having magnetic anisotropy perpendicular to the film surface. An in-plane lattice constant a1 of the underlying layer 12 and the in-plane lattice constant a2 of the recording layer 13 satisfy the following relation of |√2×a1/2-a2|/a2
摘要翻译：要解决的问题：为了减少反转电流密度的变化。解决方案：磁阻元件10包括具有在（001）面取向的立方或四方晶体结构的下层12，设置在下层12上的具有垂直于膜表面的磁各向异性的记录层13，以及具有在（001）面取向的fct（面心四边形）结构，设置在记录层13上的非磁性层14和设置在非磁性层14上的参考层15，具有垂直于磁性的各向异性到电影表面。下层12的面内晶格常数a1和记录层13的面内晶格常数a2满足¾√2×a1 / 2-a2¾/ a2

4. 发明专利

JP2008283197A Magnetoresistive effect device, magnetoresistive effect head and magnetic recording/reproducing device 有权
标题翻译：磁感应效应装置，磁阻效应头和磁记录/再现装置
公开(公告)号：JP2008283197A
公开(公告)日：2008-11-20
申请号：JP2008137210
申请日：2008-05-26
申请人： Toshiba Corp , 株式会社東芝
发明人： YUASA HIROMI , YOSHIKAWA MASAHISA , IWASAKI HITOSHI , KAMIGUCHI YUZO , SAHASHI MASASHI , FUKUZAWA HIDEAKI
IPC分类号： H01L43/08 , C22C19/07 , C22C38/00 , C22C38/10 , G01R33/09 , G11B5/012 , G11B5/39 , H01F10/16 , H01F10/32 , H01L21/8246 , H01L27/105 , H01L43/10
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/012 , G11B5/3903 , G11B5/3906 , G11C11/16 , H01F10/324 , H01F10/3268 , H01L43/10 , Y10T428/1107 , Y10T428/1121 , Y10T428/1129 , Y10T428/1143 , Y10T428/115 , Y10T428/1171 , Y10T428/1193 , Y10T428/12465 , Y10T428/12868 , Y10T428/12917 , Y10T428/12951 , Y10T428/265 , Y10T428/32
摘要： PROBLEM TO BE SOLVED: To arrange an appropriate material in at least one layer of a pinned layer and a free layer to increase a resistance change in a vertical excitation magnetoresistive effect device of a spin-valve structure. SOLUTION: Provided is a giant magnetoresistive effect device characterized by: a magnetization pinned layer having the direction of magnetization pinned substantially to one direction; a magnetization free layer having the direction of magnetization changed depending on an external magnetic field; a nonmagnetic intermediate layer formed between the magnetization pinned layer and the magnetization free layer; and electrodes adapted for making a sense current conductive in the direction substantially perpendicular to surfaces of the films of the magnetization pinned layer, the nonmagnetic intermediate layer and the magnetization free layer in which the magnetized pinned layer has substantially such a structure that two or more layers formed of bimetallic alloys represented by a general formula (i) Fe a Co 100-a (where 25 atom%≤a≤75 atom%) and (ii) one or more layers formed of Cu each as thick as 0.1 nm to 1 nm are alternately stacked. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：在至少一层被钉扎层和自由层中布置适当的材料以增加自旋阀结构的垂直激励磁阻效应装置中的电阻变化。解决方案：提供了一种巨磁阻效应器件，其特征在于：具有大致向一个方向固定的磁化方向的磁化固定层; 具有磁化方向的磁化自由层根据外部磁场而变化; 形成在磁化被钉扎层和无磁化层之间的非磁性中间层; 以及适于使感应电流在基本上垂直于磁化被钉扎层，非磁性中间层和磁化自由层的表面的方向上导电的电极，其中磁化钉扎层具有基本上这样的结构，即两层或多层由通式（i）表示的双金属合金形成，其中25原子％≤a≤75原子％，和（ii）一种或多种交替堆叠由厚度为0.1nm至1nm的Cu形成的更多层。版权所有（C）2009，JPO＆INPIT

5. 发明专利

JP2008252036A Magnetoresistive element and magnetic memory 有权
标题翻译：磁性元件和磁记忆
公开(公告)号：JP2008252036A
公开(公告)日：2008-10-16
申请号：JP2007094886
申请日：2007-03-30
申请人： Toshiba Corp , 株式会社東芝
发明人： KITAGAWA EIJI , YOSHIKAWA MASAHISA , KISHI TATSUYA , YODA HIROAKI
IPC分类号： H01L43/08 , H01L21/8246 , H01L27/105
摘要： PROBLEM TO BE SOLVED: To reduce further current density required for magnetization reversal.
SOLUTION: A magnetoresistive element 10 includes a first free layer 15 in which a direction of magnetization changes by action of electrons with spin polarized; a second free layer 13 in which the direction of the magnetization changes by the action of the electrons with the spin polarized; a fixed layer 11 in which the direction of the magnetization is fixed; a first nonmagnetic layer 14 provided between the first free layer 15 and the second free layer 13; and a second nonmagnetic layer 12 provided between the second free layer 13 and the fixed layer 11. The relation between a product Ku1×V1 of a magnetic anisotropy constant Ku1 and activation volume V1 of the first free layer 15, and a product Ku2×V2 of a magnetic anisotropy constant Ku2 and activation volume V2 of the second free layer 13 satisfies Ku1×V1>Ku2×V2.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了减少磁化反转所需的进一步的电流密度。解决方案：磁阻元件10包括第一自由层15，其中磁化方向随着具有自旋极化的电子的作用而改变; 第二自由层13，其中磁化方向由具有自旋极化的电子的作用而变化; 固定层11，其中固定磁化方向; 设置在第一自由层15和第二自由层13之间的第一非磁性层14; 以及设置在第二自由层13和固定层11之间的第二非磁性层12.将磁各向异性常数Ku1的乘积Ku1×V1与第一自由层15的激活体积V1与乘积Ku2×V2 第二自由层13的磁各向异性常数Ku2和活化体积V2满足Ku1×V1> Ku2×V2。版权所有（C）2009，JPO＆INPIT

6. 发明专利

JP2006128565A Magnetic storage device 审中-公开
标题翻译：磁性存储器件
公开(公告)号：JP2006128565A
公开(公告)日：2006-05-18
申请号：JP2004318215
申请日：2004-11-01
申请人： Toshiba Corp , 株式会社東芝
发明人： UEDA TOMOMASA , AIKAWA HISANORI , KISHI TATSUYA , KAJIYAMA TAKESHI , IWATA YOSHIHISA , YOSHIKAWA MASAHISA , YODA HIROAKI
IPC分类号： H01L27/105 , H01L21/8246 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To reduce a current which is necessary for write of data regarding a magnetic storage device. SOLUTION: The magnetic storage device comprises a magnetic record layer 19D whose magnetization direction is reversed according to the direction of an applied magnetic field and a magnetized deposition layer 19B whose magnetization direction is fixed. It also comprises a memory cell 19 which stores information by magnetoresistive effect and a wiring layer 11 which extends in a first direction, is narrower than the magnetic recording layer 19D in a second direction at right angles to the first direction, and writes the information in the memory cell 19. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：减少写入关于磁存储装置的数据所需的电流。解决方案：磁存储装置包括磁记录层19D，其磁化方向根据施加磁场的方向反转，磁记录层19B的磁化方向固定。它还包括通过磁阻效应存储信息的存储单元19和沿着第一方向延伸的布线层11，在与第一方向成直角的第二方向上比磁记录层19D窄，并将信息写入存储单元19.版权所有（C）2006，JPO＆NCIPI

7. 发明专利

JP2004259363A Magneto-resistance effect head and magnetic recording and reproducing device 有权
公开(公告)号：JP2004259363A
公开(公告)日：2004-09-16
申请号：JP2003048516
申请日：2003-02-26
申请人： Toshiba Corp , 株式会社東芝
发明人： YOSHIKAWA MASAHISA , TAKAGISHI MASAYUKI
IPC分类号： G11B5/39 , H01L43/08
CPC分类号： G11B5/3912 , G11B5/3932
摘要： PROBLEM TO BE SOLVED: To provide a magneto-resistance effect head or the like the gap of which can be made narrower to deal with higher recording density.
SOLUTION: The magneto-resistance effect head is provided with: a first, second, and third region which are arranged sequentially from the medium-facing surface side toward the rear part separate from a medium-facing surface; a magnetization free layer 1 which is formed on the first region and the magnetization of which can be rotated by an external magnetic field; a magnetization fixing layer 5 which is formed on the third region and can substantially hold the value of a given direction under the external magnetic field; an intermediate layer 3 which is formed on the second region and connects the magnetization free layer 1 to the magnetization fixing layer 5; and a pair of magnetic shields 17, 19 between which the magnetization free layer 1, the magnetization fixing layer 5, and the intermediate layer 3 are interposed and which are extended toward the rear part from the medium facing surface.
COPYRIGHT: (C)2004,JPO&NCIPI

8. 发明专利

JP2004214234A Magnetoresistance effect element, magnetoresistance effect-type head, and magnetic recording and reproducing device 有权
公开(公告)号：JP2004214234A
公开(公告)日：2004-07-29
申请号：JP2002378648
申请日：2002-12-26
申请人： Toshiba Corp , 株式会社東芝
发明人： YOSHIKAWA MASAHISA , TAKAGISHI MASAYUKI , FUNAYAMA TOMOKI , TATEYAMA KOICHI , IWASAKI HITOSHI , FUKUZAWA HIDEAKI
IPC分类号： G11B5/00 , G11B5/31 , G11B5/39 , H01F10/30 , H01F10/32 , H01L43/08 , H01L43/10
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G11B5/00 , G11B5/313 , G11B5/3143 , G11B5/3903 , G11B2005/3996 , H01F10/30 , H01F10/3254 , H01F10/3268
摘要： PROBLEM TO BE SOLVED: To provide a magnetoresistance effect element of high density which has a low interlayer coupling magnetic field and a high breakdown voltage while appropriate element resistance and a high MR change rate are maintained, and which can correspond to future high magnetic recording density.
SOLUTION: The magnetoresistance element is constituted of a magnetoresistance film and a pair of electrode films. The magnetoresistance effect film is provided with a magnetization fixing layer in which the direction of magnetization is substantially fixed to one direction; a magnetization free layer in which the direction of magnetization freely changes by an outer magnetic field; and a magnetoresistance effect film which is arranged between the magnetization fixing layer and the magnetization free layer, and which includes a non-magnetic intermediate layer having a laminated structure of a first non-metal intermediate layer, a metal intermediate layer and a second non-metal intermediate layer. The pair of electrode films are arranged in such a way that they are conducted in an almost vertical direction with respect to the film face of the magnetoresistance effect film, and are electrically connected to the magnetoresistance effect film.
COPYRIGHT: (C)2004,JPO&NCIPI

9. 发明专利

JP2002232036A VERTICAL CONDUCTING TYPE MAGNETORESISTANCE EFFECT ELEMENT, VERTICAL CONDUCTING TYPE MAGNETORESISTANCE EFFECT HEAD AND MAGNETIC RECORDER/REPRODUCER 失效
公开(公告)号：JP2002232036A
公开(公告)日：2002-08-16
申请号：JP2001025735
申请日：2001-02-01
申请人： TOSHIBA CORP
发明人： YOSHIKAWA MASAHISA , TAKAGISHI MASAYUKI , FUNAYAMA TOMOKI , TATEYAMA KOICHI
IPC分类号： G01R33/09 , G11B5/39 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a vertical conducting type magnetoresistance effect head capable of realizing a high output and a high S/N ratio by suppressing a sense current magnetic field to be applied to a magnetic sensitive region of a vertical conducting type magnetoresistance effect film. SOLUTION: The vertical conducting type magnetoresistance effect element comprises a magnetoresistance effect film (13) having a free layer, a pin layer and a spacer layer interposed therebetween, and a lower electrode (11) and an upper electrode (16) formed on and underneath the film (13) to conduct a current in a vertical direction to a surface of the film (13). The electrode (16) has an inside electrode (162) connected to the film (13) and an outside electrode (161) connected to the film (13) and formed on a periphery of the inside electrode (161). In this case, the electrode (162) has a lower electric resistivity than that of the electrode (161).

10. 发明专利

JP2013016587A Magnetoresistive effect element and manufacturing method therefor 审中-公开
标题翻译：磁阻效应元件及其制造方法
公开(公告)号：JP2013016587A
公开(公告)日：2013-01-24
申请号：JP2011147464
申请日：2011-07-01
申请人： Toshiba Corp , 株式会社東芝
发明人： YOSHIKAWA MASAHISA , SEDO SATOSHI , HARAKAWA HIDEAKI , OSEGI JUNICHI , KISHI TATSUYA , HOSOYA KEIJI
IPC分类号： H01L21/8246 , H01L27/105 , H01L29/82 , H01L43/08 , H01L43/12
CPC分类号： H01L27/228 , H01L43/08 , H01L43/12
摘要： PROBLEM TO BE SOLVED: To prevent electrical short circuit due to re-deposition without causing degradation of the element characteristics.SOLUTION: The magnetoresistive effect element includes a storage layer 11 having a variable magnetization direction, a tunnel barrier layer 12 on the storage layer 11, a reference layer 13 having an invariable magnetization direction on the tunnel barrier layer 12, a hard mask layer 14 on the reference layer 13, and a sidewall spacer layer 17 on the sidewall of the reference layer 13 and hard mask layer 14. The storage layer 11 and reference layer 13 have vertical magnetization, and the plane size of the reference layer 13 is smaller than that of the storage layer 11. Difference in size between the storage layer 11 and reference layer 13 is 2 nm or less, and the sidewall spacer layer 17 includes one of diamond, DLC, BN, SiC, BC, AlOand AlN.
摘要翻译：要解决的问题：为了防止由于再沉积引起的电气短路而不会导致元件特性的劣化。解决方案：磁阻效应元件包括具有可变磁化方向的存储层11，存储层11上的隧道势垒层12，在隧道势垒层12上具有不变磁化方向的参考层13，硬掩模参考层13上的层14和参考层13的侧壁上的侧壁间隔层17和硬掩模层14.存储层11和参考层13具有垂直磁化，参考层13的平面尺寸为存储层11和参考层13之间的尺寸差异为2nm以下，侧壁间隔层17包括金刚石，DLC，BN，SiC，B，SB SB =“ POST“> 4 C，A1 2 O 3 和AlN。版权所有（C）2013，JPO＆INPIT

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