专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2008213113A Post cmp processing liquid and manufacturing method of semiconductor device using the same 有权
标题翻译：后CMP处理液体和使用其的半导体器件的制造方法
公开(公告)号：JP2008213113A
公开(公告)日：2008-09-18
申请号：JP2007056185
申请日：2007-03-06
申请人： Toshiba Corp , 株式会社東芝
发明人： KURASHIMA NOBUYUKI , MINAMI FUKUGAKU , TATEYAMA YOSHIKUNI , YANO HIROYUKI
IPC分类号： B24B37/00 , B82Y10/00 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a post CMP processing liquid efficiently removing extraneous matters on the surfaces of an interconnection layer and an insulation film. SOLUTION: This processing liquid contains water, an amphoteric surfactant, an anionic surfactant, a complexing agent, resin particles having carboxyl groups and sulfonyl groups on surfaces and each primary particle size ≥10 mm and ≤60 mm, and tetramethyl ammonium hydroxide. The pH is ≥4 and ≤9, and each polishing speed of the insulation film and a conductive film is ≤10 nm/min. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种后CMP处理液体，其有效地去除互连层和绝缘膜的表面上的外来物质。该处理液含有水，两性表面活性剂，阴离子表面活性剂，络合剂，表面具有羧基和磺酰基的树脂颗粒，并且每个初级粒径≥10mm和≤60mm，以及四甲基氢氧化铵。 pH值≥4且≤9，绝缘膜和导电膜的每个抛光速度≤10nm/ min。版权所有（C）2008，JPO＆INPIT

2. 发明专利

JP2007280981A Water-based dispersing element for chemical mechanical polishing, chemical mechanical polishing method, kit for chemical mechanical polishing, and kit for adjusting water-based dispersing element for chemical mechanical polishing 有权
标题翻译：用于化学机械抛光的水基分散元件，化学机械抛光方法，化学机械抛光工具和用于调节水基分散元件的化学机械抛光
公开(公告)号：JP2007280981A
公开(公告)日：2007-10-25
申请号：JP2006101502
申请日：2006-04-03
申请人： Jsr Corp , Jsr株式会社 , Toshiba Corp , 株式会社東芝
发明人： UCHIKURA KAZUICHI , SHIDA HIROTAKA , HASHIGUCHI YUICHI , MINAMI FUKUGAKU , FUKUSHIMA MASARU , TATEYAMA YOSHIKUNI , YANO HIROYUKI
IPC分类号： H01L21/304 , B24B37/00 , C09K3/14
CPC分类号： H01L21/7684 , C09G1/02 , C09K3/1409 , C09K3/1463 , H01L21/31053 , H01L21/3212
摘要： PROBLEM TO BE SOLVED: To provide a water-based dispersing element for chemical mechanical polishing capable of performing chemical mechanical polishing at optimum polishing speed, to provide a chemical mechanical polishing method, to provide a kit for chemical mechanical polishing, and to provide a kit for adjusting the water-based dispensing element for chemical mechanical polishing. SOLUTION: The water-based dispersing element for chemical mechanical polishing contains: a constituent (A) that is an abrasive grain, at least one constituent (B) of quinoline carboxylic acid and pyridine carboxylic acid, a constituent (C) that is an organic acid other than the quinoline carboxylic acid and pyridine carboxylic acid, a constituent (D) that is an oxidizer, and a constituent (E) that is a nonionic surface-active agent having a triple bond. The mass ratio (WB/WC) of the amount of blend (WB) in the constituent (B) to the amount of blend (WC) in the constituent (C) is not less than 0.01 and less than 2, and the constituent (E) is expressed by a general formula (1). In the formula, m and n are independent integers that are not less than 1 and satisfy m+n≤50. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了提供能够以最佳抛光速度进行化学机械抛光的用于化学机械抛光的水性分散元件，以提供化学机械抛光方法，以提供用于化学机械抛光的试剂盒，以及提供用于调整用于化学机械抛光的水性分配元件的试剂盒。解决方案：用于化学机械抛光的水性分散元件包含：作为磨粒的成分（A），至少一种喹啉羧酸和吡啶羧酸的成分（B），成分（C），是除喹啉羧酸和吡啶羧酸以外的有机酸，作为氧化剂的成分（D）和作为具有三键的非离子表面活性剂的成分（E）。组分（B）中组分（B）中的共混物（WB）与共混物（WC）的量的质量比（WB / WC）不小于0.01且小于2，并且组分（ E）由通式（1）表示。在该式中，m和n是不小于1且满足m +n≤50的独立整数。版权所有（C）2008，JPO＆INPIT

3. 发明专利

JP2001015461A POLISHING SOLUTION AND POLISHING METHOD 失效
公开(公告)号：JP2001015461A
公开(公告)日：2001-01-19
申请号：JP18391599
申请日：1999-06-29
申请人： TOSHIBA CORP
发明人： SHIBA KATSUIKU , KOSUKEGAWA HIROSHI , TATEYAMA YOSHIKUNI
IPC分类号： B24B37/00 , C09K3/14 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To fix the contact area between polishing particles and a film to be polished and, at the same time, to fix the polishing speed by improving the dispersibility of the polishing particles at the time of performing CMP, by adding a prescribed surface active agent to a polishing solution prepared by dispersing the polishing particles in pure water. SOLUTION: A polishing solution is prepared by dispersing polishing particles in pure water and, at the same time, adding a surface active agent to the water. The surface active agent can be polyvinyl pyrrolidone, cellulose, hydroxypropyl cellulose, hydroxyethyl cellulose, or ethylene glycol alginate. When the surface active agent is added to the polishing solution, the dispersibility of the polishing particles is improved at the time of performing CMP. In other words, when the polishing particles advance in such a way that the particles come into contact with the surface of a film to be polished and shave off the surface, almost all polishing particles are dispersed in the state of primary particles. As the CMP progresses, therefore, the contact area between the polishing particles and the film to be polished is fixed at a a larger value and, at the same time, the polishing speed is also fixed.

4. 发明专利

JPH10286761A POLISHING DEVICE FOR SUBSTRATE 失效
公开(公告)号：JPH10286761A
公开(公告)日：1998-10-27
申请号：JP11015097
申请日：1997-04-11
申请人： EBARA CORP , TOSHIBA CORP
发明人： ITO KENYA , AIZAWA HIDEO , YAJIMA HIROMI , SHIGETA KENICHI , TATEYAMA YOSHIKUNI
IPC分类号： B23Q37/00 , B24B37/00 , B24B41/02
摘要： PROBLEM TO BE SOLVED: To form a polishing device compact to be installed in a narrow space, and improve convenience for transport and maintenance. SOLUTION: A first frame 10a on which a polishing table 16 having a polishing tool 48 on an upper surface is installed, and a second frame 10b on which a top ring device 12 having a rotatable top ring head 24 to hold a substrate while pressing a subject surface of the substrate to be polished to a polishing table 16 with a prescribed pressure is installed are composed as separate bodies. The first frame 10a and the second frame 10b are stacked on a base frame 10d in order to be assembled.

5. 发明专利

JPH10100066A POLISHING DEVICE 失效
公开(公告)号：JPH10100066A
公开(公告)日：1998-04-21
申请号：JP25953696
申请日：1996-09-30
申请人： TOSHIBA CORP
发明人： NAKADA RENPEI , TATEYAMA YOSHIKUNI
IPC分类号： B24B37/04 , B24B37/30 , B24B37/32 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a polishing device in order to improve the unevenness of the polishing speed distribution generated around a substrate to be processed, and furthermore, to increase the repeat-ability of the polishing speed distribution and the stability. SOLUTION: A polishing surface plate 15 having a polishing pad 14; and a sample holding means 11 to hold a sample to be processed 12 in order to oppose the polished surface of the sample 12 to the polishing pad 14; are provided, a guide ring 13 is provided to the sample holding means 11 to cover the periphery of the sample 12, and an elastic material is provided on the polishing pad contact surface side of the guide ring 13.

6. 发明专利

JP2004039704A Semiconductor device and method for manufacturing the same 有权
公开(公告)号：JP2004039704A
公开(公告)日：2004-02-05
申请号：JP2002191632
申请日：2002-07-01
申请人： Toshiba Corp , 株式会社東芝
发明人： MINAMI FUKUGAKU , FUKUSHIMA MASARU , TATEYAMA YOSHIKUNI , YANO HIROYUKI
IPC分类号： H01L21/768 , H01L23/522 , H01L23/532
CPC分类号： H01L23/5222 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a high performance semiconductor device with interconnection wiring formed without peeling or the like of an interlayer insulation film using a low permittivity insulation material.
SOLUTION: The semiconductor device 10 comprises a first insulation film 15 less than 2.5 in specific inductive capacity, an interlayer insulation film for covering the film 15 and having a second insulation film 16 having a greater specific inductive capacity than that of the first film, and a wiring 19 embedded in the interlayer insulation film. A concave part 17 is formed on a face of the first insulation film facing the second insulation film, and the bottom of the second insulation film is fixed to the concave part of the first insulation film.
COPYRIGHT: (C)2004,JPO

7. 发明专利

JP2001198794A POLISHING DEVICE 失效
公开(公告)号：JP2001198794A
公开(公告)日：2001-07-24
申请号：JP2000012856
申请日：2000-01-21
申请人： EBARA CORP , TOSHIBA CORP
发明人： OGURI SHOZO , AIZAWA HIDEO , SHIGETA KENICHI , TATEYAMA YOSHIKUNI
IPC分类号： B24B49/18 , B24B49/12 , B24B53/00 , B24B53/007 , B24B53/017 , B24B53/02 , B24B37/00
摘要： PROBLEM TO BE SOLVED: To provide a polishing device capable of easily measuring the change in the state of a polishing face, properly determining the timing for dressing the polishing face and time for replacing the members constituting the polishing face and polishing the polishing face of a substrate in high quality. SOLUTION: In a polishing device provided with a top ring, a turn table 12 having a polishing face 12a and a dresser 11 regenerating the polishing face for polishing the polishing face with a workpiece to be polished intervening between the top ring and the polishing face 12a of the turn table 12 which are rotated independently of each other and capable of regenerating the polishing face 12a by means of a dresser 11 at specified timing, a nature measuring device provided with a sensor 13, etc., for observing the nature of the polishing face 12a of the turn table 12 is provided for regenerating the polishing face 12a by means of the dresser 11, an indicator 21 is provided for indicating the measuring result by observing the nature of the polishing face 12a by means of the nature measuring instrument in regenerating the polishing face 12a by means of the dresser 11.

8. 发明专利

JPH11277403A Polishing device 失效
标题翻译：抛光装置
公开(公告)号：JPH11277403A
公开(公告)日：1999-10-12
申请号：JP9697198
申请日：1998-03-26
申请人： Ebara Corp , Toshiba Corp , 株式会社東芝 , 株式会社荏原製作所
发明人： KIMURA NORIO , ISHII YU , TATEYAMA YOSHIKUNI
IPC分类号： B24B1/00 , B24B53/007 , B24B53/017 , H01L21/304 , B24B37/00
CPC分类号： B24B53/017 , B24B53/02
摘要： PROBLEM TO BE SOLVED: To provide a polishing device in which both a contact type dressing unit using a brush or a diamond dresser and a non-contact type dressing unit using fluid jet are incorporated, and a conditioning method for a polishing cloth in this polishing device. SOLUTION: In a polishing device which is provided with a turntable 20 to which a polishing cloth 5 is attached, and a top ring 3, and which presses a semiconductor wafer 2 intervening between the turntable 20 and the top ring 3 under a specified pressure to polish the semiconductor wafer 2, a first dressing unit having a contact type dresser 10 for performing dressing of the polishing cloth 5 in contact with the surface of the polishing cloth 5, and a second dressing unit 16 having a non-contact type dresser 15 for performing dressing by spraying fluid jet to the surface of the polishing cloth 5, are provided.
摘要翻译：要解决的问题：提供一种研磨装置，其中包括使用刷子或金刚石修整器的接触式修整单元和使用流体射流的非接触式修整单元两者，以及在该抛光中的抛光布的调节方法设备。解决方案：在设置有安装有抛光布5的转盘20和顶环3的抛光装置中，并且在指定压力下将介于转台20和顶环3之间的半导体晶片2按压到抛光半导体晶片2，第一修整单元具有接触型修整器10，用于进行与抛光布5的表面接触的抛光布5的修整;以及第二修整单元16，其具有非接触型修整器15，用于提供了通过将喷射流体喷射到抛光布5的表面进行修整。

9. 发明专利

JPH11251276A POLISHING METHOD 失效
公开(公告)号：JPH11251276A
公开(公告)日：1999-09-17
申请号：JP5331998
申请日：1998-03-05
申请人： TOSHIBA CORP
发明人： NISHIOKA TAKESHI , SEKINE KUNIO , YOSHII YASUO , TATEYAMA YOSHIKUNI
IPC分类号： H01L21/3205 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a polishing method and a polishing apparatus which dispenses with extending polishing time of a polished film and for using a special abrasive liquid suitable for a material forming the polished film, while reducing the polishing amount of a recess in the polished film. SOLUTION: A silicon oxide film 3 is formed as an insulation film on a circular silicon substrate 4, and an A1 interconnection 2 is formed on the oxide film 3 through lithography or etching. A silicon oxide film 1, which is a polished film, is then formed by plasma CVD. A circular polishing cloth 9 is positioned opposite to the silicon oxide film 1. Polishing liquid 8 containing polishing particles is supplied between the silicon oxide film 1 and the polishing cloth 9, and desired polishing can be performed in that convex portions are polished and recesses are not polished in the silicon oxide film 1 by maintaining P

10. 发明专利

JPH10125681A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH10125681A
公开(公告)日：1998-05-15
申请号：JP22667697
申请日：1997-08-22
申请人： TOSHIBA CORP
发明人： AKIYAMA KAZUTAKA , ONO HITOHISA , KODERA MASAKO , TATEYAMA YOSHIKUNI
IPC分类号： H01L21/28 , H01L21/304 , H01L21/3205 , H01L23/52
摘要： PROBLEM TO BE SOLVED: To perform planarization, while preventing excessive insertion of a dummy pattern into an interlayer formed on an interconnection pattern having random steps by polishing, prior to polishing, a second layer under specified state of occupation area of a first layer and the occupation area of protrusions on the surface of a second patterned layer covering the first layer. SOLUTION: SiO2 11 is deposited on an Si wafer 10, and then Al 12 and TiN 13 are deposited sequentially thereon to form a conductive layer. Subsequently, an interconnection 14 is formed on the TiN 13 of the TiN 13, and the Al 12 and SiO2 15 is deposited on the entire surface. Consequently, protrusions 16 are generated on the surface of the SiO2 15 and steps appear on the SiO2 15. Planarization is then performed by polishing the interlayer by CMP method on condition that the occupation area of protrusions existing in the range of 1mm×1mm at an arbitrary point of an interlayer on the surface of interlayer is 60% or above, prior to polishing and the occupation area of a plurality of first interconnections is 60% or below.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式