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1. 发明专利

JP2008047842A Composition for cleaning, cleaning method, and manufacturing method of semiconductor device 有权
标题翻译：清洗组合物，清洗方法及制造半导体器件的方法
公开(公告)号：JP2008047842A
公开(公告)日：2008-02-28
申请号：JP2006224759
申请日：2006-08-21
申请人： Jsr Corp , Jsr株式会社 , Toshiba Corp , 株式会社東芝
发明人： ANDO MICHIAKI , KONNO TOMOHISA , SHIDA HIROTAKA , KURASHIMA NOBUYUKI , MINAMI FUKUGAKU , TATEYAMA YOSHIKUNI , YANO HIROYUKI , UCHIKURA KAZUICHI
IPC分类号： H01L21/304 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C11D1/14 , C11D1/22 , C11D1/72 , C11D3/20 , C11D3/30 , C11D3/33 , C11D3/36 , C11D3/37 , C23G5/02 , H01L21/3205 , H01L21/321 , H01L21/768
CPC分类号： C11D11/0047 , C11D3/37 , C11D17/06 , H01L21/02074
摘要： PROBLEM TO BE SOLVED: To provide a cleaning composition, along with a cleaning method of a semiconductor substrate using the same and a manufacturing method of a semiconductor device including the cleaning method, which can remove impurities such as residual abrasive grain, residual polishing chips, and metal ion on a metal wiring and a low-dielectricity insulating film, with no corrosion of metal wirings, with no degradation in electric characteristics of the low-dielectricity insulating film, and with no mechanical damage on the low-dielectricity insulating film when contaminant on a substrate surface is removed after chemical and mechanical polishing of a semiconductor substrate comprising metal wirings and low-dielectricity insulating film.
SOLUTION: The composition for cleaning is used after chemical and mechanical polishing, and has a structure of cross linkage. It contains organic polymer particles (A) and complexing agent (B) whose average dispersion particle size is 10 nm to less than 100 nm.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供清洁组合物以及使用其的半导体基板的清洁方法以及包括清洁方法的半导体器件的制造方法，其可以除去诸如残留磨粒的残留物，残留物抛光芯片和金属离子在金属布线和低介电绝缘膜上，没有金属布线的腐蚀，低介电性绝缘膜的电气特性没有降低，并且在低介电性绝缘体上没有机械损伤在包含金属布线和低介电性绝缘膜的半导体衬底的化学和机械抛光之后去除衬底表面上的污染物的膜。解决方案：用于清洁的组合物在化学和机械抛光之后使用，并且具有交联的结构。它含有平均分散粒度为10nm至小于100nm的有机聚合物颗粒（A）和络合剂（B）。版权所有（C）2008，JPO＆INPIT

2. 发明专利

JP2007280981A Water-based dispersing element for chemical mechanical polishing, chemical mechanical polishing method, kit for chemical mechanical polishing, and kit for adjusting water-based dispersing element for chemical mechanical polishing 有权
标题翻译：用于化学机械抛光的水基分散元件，化学机械抛光方法，化学机械抛光工具和用于调节水基分散元件的化学机械抛光
公开(公告)号：JP2007280981A
公开(公告)日：2007-10-25
申请号：JP2006101502
申请日：2006-04-03
申请人： Jsr Corp , Jsr株式会社 , Toshiba Corp , 株式会社東芝
发明人： UCHIKURA KAZUICHI , SHIDA HIROTAKA , HASHIGUCHI YUICHI , MINAMI FUKUGAKU , FUKUSHIMA MASARU , TATEYAMA YOSHIKUNI , YANO HIROYUKI
IPC分类号： H01L21/304 , B24B37/00 , C09K3/14
CPC分类号： H01L21/7684 , C09G1/02 , C09K3/1409 , C09K3/1463 , H01L21/31053 , H01L21/3212
摘要： PROBLEM TO BE SOLVED: To provide a water-based dispersing element for chemical mechanical polishing capable of performing chemical mechanical polishing at optimum polishing speed, to provide a chemical mechanical polishing method, to provide a kit for chemical mechanical polishing, and to provide a kit for adjusting the water-based dispensing element for chemical mechanical polishing. SOLUTION: The water-based dispersing element for chemical mechanical polishing contains: a constituent (A) that is an abrasive grain, at least one constituent (B) of quinoline carboxylic acid and pyridine carboxylic acid, a constituent (C) that is an organic acid other than the quinoline carboxylic acid and pyridine carboxylic acid, a constituent (D) that is an oxidizer, and a constituent (E) that is a nonionic surface-active agent having a triple bond. The mass ratio (WB/WC) of the amount of blend (WB) in the constituent (B) to the amount of blend (WC) in the constituent (C) is not less than 0.01 and less than 2, and the constituent (E) is expressed by a general formula (1). In the formula, m and n are independent integers that are not less than 1 and satisfy m+n≤50. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了提供能够以最佳抛光速度进行化学机械抛光的用于化学机械抛光的水性分散元件，以提供化学机械抛光方法，以提供用于化学机械抛光的试剂盒，以及提供用于调整用于化学机械抛光的水性分配元件的试剂盒。解决方案：用于化学机械抛光的水性分散元件包含：作为磨粒的成分（A），至少一种喹啉羧酸和吡啶羧酸的成分（B），成分（C），是除喹啉羧酸和吡啶羧酸以外的有机酸，作为氧化剂的成分（D）和作为具有三键的非离子表面活性剂的成分（E）。组分（B）中组分（B）中的共混物（WB）与共混物（WC）的量的质量比（WB / WC）不小于0.01且小于2，并且组分（ E）由通式（1）表示。在该式中，m和n是不小于1且满足m +n≤50的独立整数。版权所有（C）2008，JPO＆INPIT

3. 发明专利

JP2005045229A Water dispersion for chemical mechanical polishing and chemical mechanical polishing method 审中-公开
标题翻译：化学机械抛光和化学机械抛光方法的水分散
公开(公告)号：JP2005045229A
公开(公告)日：2005-02-17
申请号：JP2004198231
申请日：2004-07-05
申请人： Jsr Corp , Jsr株式会社 , Toshiba Corp , 株式会社東芝
发明人： UCHIKURA KAZUICHI , NISHIMOTO KAZUO , HATTORI MASAYUKI , KAWAHASHI NOBUO , YANO HIROYUKI , MATSUI YUKITERU , MINAMI FUKUGAKU , FUKUSHIMA MASARU , KURASHIMA NOBUYUKI
IPC分类号： B24B37/00 , C09K3/14 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a water dispersion for chemical mechanical polishing which can polish each of various layers to be worked with high efficiency and by which a sufficiently flattened and highly accurate finished face can be obtained, and a chemical mechanical polishing method using the same. SOLUTION: The water dispersion for the chemical mechanical polishing includes a component (A) as abrasive grains, a component (B) composed of at least either of a quinoline carboxylic acid and a pyridine carboxylic acid, a component (C) composed of an organic acid other than the quinoline carboxylic acid and the pyridine carboxylic acid, and a component (D) composed of an oxidizer. A mass ratio (WB/WC) between the content (WB) of the component (B) and the content (WC) of the component (C) is ≥ 0.01 and COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种用于化学机械抛光的水分散体，其可以高效率地抛光各个待加工层，并且可以获得足够扁平化和高精度的成品面，以及化学机械抛光方法使用相同。解决方案：用于化学机械抛光的水分散体包括作为磨粒的组分（A），由喹啉羧酸和吡啶羧酸中的至少一种组成的组分（B），组分（C）的喹啉羧酸和吡啶羧酸以外的有机酸和由氧化剂构成的成分（D）。组分（B）的含量（WB）和组分（C）的含量（WC）之间的质量比（WB / WC）≥0.01且<2。氨和氨组分由铵组成的密度离子≤0.005摩尔/升。版权所有（C）2005，JPO＆NCIPI

4. 发明专利

JP2010028077A Aqueous dispersing element for chemical mechanical polishing and manufacturing method thereof, and chemical mechanical polishing method 审中-公开
标题翻译：化学机械抛光及其制造方法的水分散元件和化学机械抛光方法
公开(公告)号：JP2010028077A
公开(公告)日：2010-02-04
申请号：JP2009022255
申请日：2009-02-03
申请人： Jsr Corp , Jsr株式会社
发明人： KUBOUCHI SHO , UCHIKURA KAZUICHI , SHIDA HIROTAKA , ANDO MICHIAKI
IPC分类号： H01L21/304 , B24B37/00 , C09K3/14
摘要： PROBLEM TO BE SOLVED: To provide an aqueous dispersing element for chemical mechanical polishing that has high polishing speed and high polishing selectivity to a copper film and reduces surface defects on a surface to be polished, and to provide a chemical mechanical polishing method using the aqueous dispersing element for chemical mechanical polishing. SOLUTION: The aqueous dispersing element for chemical mechanical polishing polishes a copper film containing a silica particle (A) and an amino acid (B), where the silica particle (A) has chemical properties of silanol group density calculated from a specific surface area measured by a BET method and a silanol group amount measured by titration being equal to 1.0-3.0/nm 2 . COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于化学机械抛光的水性分散元件，其对铜膜具有高抛光速度和高抛光选择性，并减少待抛光表面上的表面缺陷，并提供化学机械抛光方法使用水分散元件进行化学机械抛光。解决方案：用于化学机械抛光的水分散元件抛光含有二氧化硅颗粒（A）和氨基酸（B）的铜膜，其中二氧化硅颗粒（A）具有由特定的硅烷醇密度计算的硅烷醇密度的化学性质通过BET法测量的表面积和通过滴定测量的硅烷醇基量等于1.0-3.0 / nm 2。版权所有（C）2010，JPO＆INPIT

5. 发明专利

JP2010016346A Aqueous dispersing element for chemical mechanical polishing, manufacturing method thereof, and chemical mechanical polishing method 有权
标题翻译：化学机械抛光的水分散元件及其制造方法和化学机械抛光方法
公开(公告)号：JP2010016346A
公开(公告)日：2010-01-21
申请号：JP2009029635
申请日：2009-02-12
申请人： Jsr Corp , Jsr株式会社
发明人： IKEDA MASATOSHI , SHIDA HIROTAKA , UCHIKURA KAZUICHI , ANDO MICHIAKI
IPC分类号： H01L21/304 , B24B37/00 , C09K3/14
摘要： PROBLEM TO BE SOLVED: To provide an aqueous dispersing element for chemical mechanical polishing having high polishing speed and high polishing selectivity to a copper film without causing any defects to the copper film and a low-dielectric-constant insulation film even under normal pressure conditions, and having a small amount of metal contamination in a wafer, and to provide a chemical mechanical polishing method using the aqueous dispersing element for chemical mechanical polishing. SOLUTION: The aqueous dispersing element for chemical mechanical polishing polishes the copper film. The copper film contains: a silica particle A; an organic acid B; and a water-soluble polymer C having properties as a Lewis base of which weight-average molecular weight is not less than ten thousand and not more than a million and a half. The silica particle A has the following chemical properties of a silanol group calculated from signal area of a 29 Si-NMR spectrum being 2.0-3.0×10 21 /g. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决方案：提供一种用于化学机械抛光的水性分散元件，其具有高的抛光速度和对铜膜的高抛光选择性，而不会对铜膜造成任何缺陷，并且即使在正常情况下也不会产生低介电常数的绝缘膜并且在晶片中具有少量的金属污染，并提供使用该化学机械抛光用水分散元件的化学机械研磨方法。
解决方案：用于化学机械抛光的水分散元件抛光铜膜。铜膜包含：二氧化硅颗粒A; 有机酸B; 具有重均分子量为10000以上且百万分之一以下的作为路易斯碱的性质的水溶性聚合物C。二氧化硅颗粒A具有由2.0-3.0×10 SP-21 / g的信号面积计算的硅烷醇基团的以下化学性质。版权所有（C）2010，JPO＆INPIT

6. 发明专利

JP2009302551A Set for manufacturing water-based dispersing element for chemical-mechanical polishing 审中-公开
标题翻译：用于制造化学机械抛光的基于水的分散元件
公开(公告)号：JP2009302551A
公开(公告)日：2009-12-24
申请号：JP2009182356
申请日：2009-08-05
申请人： Jsr Corp , Jsr株式会社
发明人： UCHIKURA KAZUICHI , NISHIMOTO KAZUO , HATTORI MASAYUKI , KAWAHASHI NOBUO
IPC分类号： H01L21/304 , B24B37/00 , C09K3/14
CPC分类号： C09K3/1463 , C09G1/04 , H01L21/3212
摘要： PROBLEM TO BE SOLVED: To provide a set for manufacturing a water-based dispersing element for chemical-mechanical polishing which suppresses surface defects such as dishing, erosion, and scratches in a process of flattening a polished surface by chemical-mechanical polishing, and which excels in long-time stability even in a concentrated state. SOLUTION: A method for performing chemical-mechanical polishing includes the steps of: providing the set for manufacturing water-based dispersing element for chemical-mechanical polishing, this set composing of a water-based dispersing element (A) which contains silica particle but not contain an organic acid, and an aqueous solution (B) which contains the organic acid but not contain the silica particle; blending the water-based dispersing element (A), the aqueous solution (B), and an oxidant (C) to manufacture the water-based dispersing element for chemical-mechanical polishing; and then supplying the water-based dispersing element for chemical-mechanical polishing to a grinder so as to perform the chemical-mechanical polishing of a surface to be polished. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于化学机械抛光的水性分散元件的制造装置，其通过化学机械抛光在抑制抛光表面的平坦化处理中抑制表面缺陷如凹陷，侵蚀和划痕即使在集中的状态下也具有长期稳定性。解决方案：一种用于进行化学机械抛光的方法包括以下步骤：提供用于制造用于化学机械抛光的水性分散元件的组，该组合物包含含有二氧化硅的水性分散元素（A）颗粒但不含有机酸和含有有机酸但不含二氧化硅颗粒的水溶液（B）; 混合水性分散元素（A），水溶液（B）和氧化剂（C），制造用于化学机械抛光的水性分散元件; 然后将用于化学机械抛光的水性分散元件供给到研磨机，以进行待抛光表面的化学机械抛光。版权所有（C）2010，JPO＆INPIT

7. 发明专利

JP2010161201A Chemical mechanical polishing aqueous dispersion, chemical mechanical polishing method using the same, and method of manufacturing chemical mechanical polishing aqueous dispersion 审中-公开
标题翻译：化学机械抛光水性分散体，使用其的化学机械抛光方法和制造化学机械抛光水分散体的方法
公开(公告)号：JP2010161201A
公开(公告)日：2010-07-22
申请号：JP2009002457
申请日：2009-01-08
申请人： Jsr Corp , Jsr株式会社
发明人： MATSUDA TAKASHI , SHIDA HIROTAKA , UCHIKURA KAZUICHI
IPC分类号： H01L21/304 , B24B37/00 , C09K3/14
摘要： PROBLEM TO BE SOLVED: To provide a chemical mechanical polishing aqueous dispersion capable of polishing various types of polished surfaces at high speed in a second polishing step of a two-step polishing process, obtaining a sufficiently flattened finishing surface with high accuracy, and suppressing generation of scratches and erosion. SOLUTION: A chemical mechanical polishing aqueous dispersion contains (A) maleic acid, (B) heterocyclic compound, and (C) abrasive grain. The pH value is 2 to 6, and a proportion (W A /W B ) of a containing amount (W A ) [mass%] of the (A) component and a containing amount (W B ) [mass%] of the (B) component is 0.5 to 6.5. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了提供能够在两步抛光工艺的第二抛光步骤中高速抛光各种类型的抛光表面的化学机械抛光水分散体，以高精度获得足够扁平化的精加工表面，并抑制划痕和侵蚀的产生。解决方案：化学机械抛光水性分散体含有（A）马来酸，（B）杂环化合物和（C）磨料颗粒。 pH值为2〜6，含量（W A ）的比例（W A / W> SB ）[质量％ ]（B）成分的含量（W B ）[质量％]为0.5〜6.5。版权所有（C）2010，JPO＆INPIT

8. 发明专利

JP2010034497A Aqueous dispersion for chemo-mechanical polishing and manufacturing method thereof, and chemo-mechanical polishing method 审中-公开
标题翻译：化学机械抛光及其制造方法的水性分散体和机械抛光方法
公开(公告)号：JP2010034497A
公开(公告)日：2010-02-12
申请号：JP2009022254
申请日：2009-02-03
申请人： Jsr Corp , Jsr株式会社
发明人： IKEDA MASATOSHI , SHIDA HIROTAKA , UCHIKURA KAZUICHI , ANDO MICHIAKI
IPC分类号： H01L21/304 , B24B37/00 , C09K3/14
摘要： PROBLEM TO BE SOLVED: To provide an aqueous dispersion for chemo-mechanical polishing having high polishing speed and high polishing selectivity to a copper film, and a small amount of metal contamination of a wafer without causing any defects in the copper film and a low dielectric-constant insulation film even under normal pressure conditions, and to provide a chemo-mechanical polishing method using the aqueous dispersion for chemo-mechanical polishing. SOLUTION: The aqueous dispersion for chemo-mechanical polishing is used for polishing the copper film containing a silica particle (A), an organic acid (B), and an anionic surfactant (C). The silica particle (A) should have the following chemical properties. Silanol group density calculated from a specific surface area measured by a BET method and the amount of silanol groups measured by titration is 1.0-3.0/nm 2 . COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了提供具有高的抛光速度和对铜膜的高抛光选择性的化学机械抛光的水性分散体和少量的晶片的金属污染，而不会引起铜膜和即使在常压条件下也是低介电常数绝缘膜，并提供使用该水性分散体进行化学机械抛光的化学机械抛光方法。溶液：用于化学机械抛光的水性分散体用于抛光含有二氧化硅颗粒（A），有机酸（B）和阴离子表面活性剂（C）的铜膜。二氧化硅颗粒（A）应具有以下化学性质。通过BET法测定的比表面积计算出的硅烷醇密度和通过滴定测定的硅烷醇基团量为1.0-3.0 / nm 2。版权所有（C）2010，JPO＆INPIT

9. 发明专利

JP2010028074A Aqueous dispersing element for chemical mechanical polishing and manufacturing method thereof, and chemical mechanical polishing method 有权
标题翻译：化学机械抛光及其制造方法的水分散元件和化学机械抛光方法
公开(公告)号：JP2010028074A
公开(公告)日：2010-02-04
申请号：JP2009013933
申请日：2009-01-26
申请人： Jsr Corp , Jsr株式会社
发明人： KUBOUCHI SHO , UCHIKURA KAZUICHI , SHIDA HIROTAKA
IPC分类号： H01L21/304 , B24B37/00 , C09K3/14
摘要： PROBLEM TO BE SOLVED: To provide an aqueous dispersing element for chemical mechanical polishing that reduces metal contamination in a wafer for forming a device and has improved storage stability of silica particles, and to provide a chemical mechanical polishing method using the aqueous dispersing element for chemical mechanical polishing. SOLUTION: The aqueous dispersing element for chemical mechanical polishing polishes a copper film containing a silica particle (A) and an amino acid (B), where the silica particle (A) has the following chemical properties. More specifically, the content of sodium, potassium, and ammonium ions measured by an element analysis by an ICP emission spectrometry or an ICP mass spectrometry and a quantitative analysis of the ammonium ion by an ion chromatography method satisfies a relationship of the content of sodium and the content of at least one selected from sodium and ammonium ions being equal to 5-500 ppm and 100-20,000 ppm, respectively. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于化学机械抛光的水性分散元件，其减少用于形成器件的晶片中的金属污染并且改善了二氧化硅颗粒的储存稳定性，并且提供了使用水分散体的化学机械抛光方法化学机械抛光元件。解决方案：用于化学机械抛光的水分散元件抛光含有二氧化硅颗粒（A）和氨基酸（B）的铜膜，其中二氧化硅颗粒（A）具有以下化学性质。更具体地说，通过ICP发射光谱法或ICP质谱法进行元素分析测定的钠，钾和铵离子的含量以及通过离子色谱法进行的铵离子的定量分析满足钠和钾的含量与选自钠和铵离子中的至少一种的含量分别等于5-500ppm和100-20,000ppm。版权所有（C）2010，JPO＆INPIT

10. 发明专利

JP2013156776A Touch panel and method of manufacturing touch panel 审中-公开
标题翻译：触控面板和制造触摸面板的方法
公开(公告)号：JP2013156776A
公开(公告)日：2013-08-15
申请号：JP2012015961
申请日：2012-01-27
申请人： Jsr Corp , Jsr株式会社
发明人： KUWATA HIROAKI , MOCHIZUKI DAIGO , TANAKA TAKERO , SHIMODA SUGIO , UCHIKURA KAZUICHI , OKITA KENZO , ARITOME ISAO
IPC分类号： G06F3/041
摘要： PROBLEM TO BE SOLVED: To provide a touch panel including a detection electrode of low resistance value composed of metallic material, and a method of manufacturing the same.SOLUTION: A touch panel 1 comprises a first detection electrode 3 and a second detection electrode 4 arranged in a matrix shape on a substrate 2. The first detection electrode 3 and the second detection electrode 4 are formed by heating under a temperature T(°C) having the relationship of following formula with the boiling point T(°C) of (B) amine, under an atmosphere or under a non-oxidizing atmosphere, using an electrode formation composition including (A) copper formate or a hydrate thereof and the (B) amine.
摘要翻译：要解决的问题：提供一种包括由金属材料构成的低电阻值的检测电极的触摸面板及其制造方法。触摸屏1包括：第一检测电极3和第二检测电极4，在基板2上形成矩阵状。第一检测电极3和第二检测电极4通过在具有下列关系的温度T（℃）下加热（B）的沸点T（℃））胺，在气氛下或非氧化性气氛下，使用包含（A）甲酸铜或其水合物和（B）胺的电极形成组合物。

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