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1. 发明专利

JP2010127905A Mixing cartridge and analyte inspection device 审中-公开
标题翻译：混合盒和分析仪检测装置
公开(公告)号：JP2010127905A
公开(公告)日：2010-06-10
申请号：JP2008306564
申请日：2008-12-01
申请人： Toshiba Corp , 株式会社東芝
发明人： MIYAMOTO HIROHISA , KANEHARA TAKESHI , NAKAMURA YOSHIAKI
IPC分类号： G01N35/08
CPC分类号： G01N35/1095 , B01F13/0059 , B01F15/0201 , B01F15/0232 , B01J19/0093 , B01J2219/0086 , B01J2219/00871 , B01J2219/00889 , B01J2219/00891 , B01L3/502715 , B01L2200/028 , B01L2300/0867 , B01L2300/0874 , B01L2300/161 , B01L2400/0478 , G01N2035/00158 , G01N2035/1034
摘要： PROBLEM TO BE SOLVED: To perform accurate inspection with an extremely small amount of analyte and a reaction reagent.
SOLUTION: This mixing cartridge 200 mixes the analyte with a first reagent corresponding to a measuring item to be inspected. The mixing cartridge 200 includes a member for forming a fine channel 1 where solution containing at least one of the analyte and the first reagent distributes, an analyte tank 5 and analyte pump 15 for supplying the analyte to the fine channel 1, a first reagent tank 4 and a first reagent pump 14 for supplying the first reagent to the fine channel 1, and a first fine waste channel 6 that communicates with the fine channel 1 and separates a part of the solution distributing in the fine channel 1 from the solution by a capillarity phenomenon.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：用极少量的分析物和反应试剂进行精确检查。解决方案：该混合筒200将分析物与对应于要检查的测量项目的第一试剂混合。混合筒200包括用于形成精细通道1的部件，其中包含分析物和第一试剂中的至少一个的溶液分布，用于将分析物供应到细流路1的分析物罐5和分析物泵15，第一试剂罐 4和用于将第一试剂供应到精细通道1的第一试剂泵14和与精细通道1连通并将分配在精细通道1中的溶液的一部分与溶液分离的第一细小废物通道6 毛细管现象版权所有（C）2010，JPO＆INPIT

2. 发明专利

JPH11151462A ROTARY COATING METHOD AND ROTARY COATING DEVICE 失效
公开(公告)号：JPH11151462A
公开(公告)日：1999-06-08
申请号：JP26018598
申请日：1998-09-14
申请人： TOSHIBA CORP
发明人： TACHIKAWA YUICHI , NAKAMURA YOSHIAKI
IPC分类号： G03F7/16 , B05C11/08 , B05D1/40 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To sufficiently cope with a large sized body to be coated or a body to be coated, which is required to make a film thin, by remarkably increasing the number of rotations (speed), at which the unevenness of coating film thickness due to the turbulence of air stream is generated. SOLUTION: In a rotary coating device for forming a coating film on the surface of the body 1 to be coated by spreading a coating liquid 5 on the body 1 to be coated with a centrifugal force by rotating the body 1 to be coated, on which the coating liquid is dropped, gas supply and ventilating means 21, 22, 23, 24 for supplying a gas to the body 1 to be coated, on which the coating liquid 5 is stuck, and for forcibly forming a gas stream flowing along the surface of the body 1 to be coated with the coating liquid 5 by the rotation of the body 1 to be coated and ventilating are provided.

3. 发明专利

JP2009131797A Microdroplet coater 审中-公开
标题翻译： MICRODROPLET COATER
公开(公告)号：JP2009131797A
公开(公告)日：2009-06-18
申请号：JP2007310684
申请日：2007-11-30
申请人： Toshiba Corp , 株式会社東芝
发明人： NAKAMURA YOSHIAKI
IPC分类号： B05C15/00 , B05C5/00
CPC分类号： H01L21/6715
摘要： PROBLEM TO BE SOLVED: To provide a microdroplet coater in which the clogging of a nozzle is reduced.
SOLUTION: The microdroplet coater includes: a container; a microdroplet coating means provided inside the container, processing a coating solution containing a solute and a solvent into microdroplets, and coating the microdroplets on the substrate placed in the container; and an atmosphere adjustment means holding the atmosphere in the container so that the solvent is prevented from evaporating.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种微滴涂布机，其中喷嘴的堵塞减小。
解决方案：微滴涂布机包括：容器; 设置在容器内部的微滴涂布装置，将含有溶质和溶剂的涂布溶液加工成微滴，并将放置在容器中的基材上的微滴涂布; 和将气氛保持在容器中以防止溶剂蒸发的气氛调节装置。版权所有（C）2009，JPO＆INPIT

4. 发明专利

JPH01315130A VAPOR GROWTH APPARATUS 失效
公开(公告)号：JPH01315130A
公开(公告)日：1989-12-20
申请号：JP6932389
申请日：1989-03-23
申请人： TOSHIBA CORP
发明人： NAKAMURA YOSHIAKI
IPC分类号： H01L21/205
摘要： PURPOSE:To form a crystal thin film which is uniformly thick over the whole surface on a specimen face by arranging a stream-regulating means of a prescribed shape inside an expanded part. CONSTITUTION:Three stream-regulating sheets 8a, 8b, 8c are arranged, inside an expanded part 11b of a reaction tube 11, in a position of a distance L from a gas introduction port 11a. The stream-regulating sheet 8a is situated in the center of the expanded part 11b; the stream-regulating sheets 8b, 8c are arranged in such a way that they are symmetric with reference to the central axis of the expanded part 11b and that each angle theta1 formed by the individual stream- regulating sheets 8a, 8b with reference to the central axis of the reaction tube 11 is larger than an angle theta2 formed by a side face of the expanded part 11b with reference to the central axis of the reaction tube 11. A susceptor 12 made of carbon is arranged inside a reaction part 11c of the reaction tube 11; one sheet or two or more sheets of semiconductor wafers 13 are placed on the susceptor 12. By this setup, a thin film which is uniformly thin over the whole surface can be formed on a crystal substrate.

5. 发明专利

JP2007223015A Method for manufacturing particle substrate, and particle substrate 有权
标题翻译：制造颗粒基质和颗粒基质的方法
公开(公告)号：JP2007223015A
公开(公告)日：2007-09-06
申请号：JP2006050403
申请日：2006-02-27
申请人： Toshiba Corp , 株式会社東芝
发明人： TODORI KENJI , FUJIMOTO AKIRA , GOKOCHI TORU , NAKANISHI TSUTOMU , NAKAMURA YOSHIAKI
IPC分类号： B82B3/00 , C23C28/00
摘要： PROBLEM TO BE SOLVED: To provide a particle substrate having nanoparticles or sub-nano particles of ≤1 nm regularly formed in a wide area, and to provide a method for manufacturing the particle substrate.
SOLUTION: The method includes steps of: preparing a substrate 1 the surface of which has a deposit layer 2 containing a metal; forming a particle layer 4 comprising uniformly arranged metal particles at a certain distance from the surface of the substrate 1 via an insulating layer 3; and irradiating the particle layer 4 with light from the opposite side to the insulating layer 3 so as to generate plasmon in the metal particle end of the particle layer 4 of the insulating layer 3 side and to almost uniformly deposit particle groups comprising the metal of the deposit layer 2 or oxides of the metal corresponding to the plasmon.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供具有规模形成在大面积上的≤1nm的纳米颗粒或亚纳米颗粒的颗粒基板，并提供一种制造该颗粒基板的方法。解决方案：该方法包括以下步骤：制备其表面具有含有金属的沉积层2的基底1; 通过绝缘层3形成包含与基板1的表面一定距离的均匀排列的金属颗粒的颗粒层4; 并且将来自与绝缘层3相反的一侧的光照射在粒子层4上，以便在绝缘层3侧的粒子层4的金属粒子端部产生等离子体激元，并且几乎均匀地沉积包含绝缘层3的金属的粒子群沉积层2或对应于等离子体的金属的氧化物。版权所有（C）2007，JPO＆INPIT

6. 发明专利

JP2000237670A COATING FILM FORMING APPARATUS 失效
公开(公告)号：JP2000237670A
公开(公告)日：2000-09-05
申请号：JP35755999
申请日：1999-12-16
申请人： TOSHIBA CORP
发明人： NAKAMURA YOSHIAKI , OMINE TOSHIMITSU
IPC分类号： B05D1/40 , B05C11/08 , B05C15/00 , G03F7/16 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To shorten the coating time without altering the design of an apparatus to a large extent and without changing the raw material physical properties of a resist solvent or the like. SOLUTION: The coating film forming apparatus for spreading the coating soln. 5 dripped on an object 1 to be treated by centrifugal pump action due to the rotation of the object to be coated and evaporating the solvent of the coating soln. 5 to form a coating film on the object 1 to be coated, a tank 14 storing the coating soln. and a housing case 15 for housing the object to be coated are arranged in a housing P and the housing P is provided in a clean room CR. By setting the temp. in the housing P higher than the temp. in the clean room CR by using temp. controllers 30, 31, 32, 33, the coating time can be shortend.

7. 发明专利

JPS6486535A WAFER HANDLING DEVICE 失效
公开(公告)号：JPS6486535A
公开(公告)日：1989-03-31
申请号：JP24265987
申请日：1987-09-29
申请人： TOSHIBA CORP
发明人： NAKAMURA YOSHIAKI
IPC分类号： H01L21/683 , H01L21/68
摘要： PURPOSE:To enable handling operation by the contact of a wafer sucking jig only with the rear of a wafer, and to prevent the damage to the surface of the wafer by providing a wafer susceptor, the jig and a transfer means moving the wafer to a fixed position. CONSTITUTION:A susceptor 3 is overturned from a hinge section 8, and a vacuum sucking jig 10 as a handling jig is passed through a through-hole 7 bored to the susceptor 3. On the other hand, a wafer 5 is placed onto a fork 9 while the crystal growth face of the surface is directed upward, and being forwarded from a pretreatment process. The nose section of the vacuum suction 10 is made to collide with the rear of the wafer 5, and the rear of the wafer is sucked under a vacuum. The fork 9 is returned to an original position while the wafer 5 is housed into a wafer housing section 4 by downward moving the vacuum suction 10. Accordingly, a contact with the surface of the wafer of the handling jig when the wafer is mounted to or dismantled from the wafer susceptor is prevented.

8. 发明专利

JPH07169758A METHOD FOR GENERATING EXCITED OXYGEN AND METHOD FOR SUPPLYING IT 失效
公开(公告)号：JPH07169758A
公开(公告)日：1995-07-04
申请号：JP22995194
申请日：1994-09-26
申请人： TOSHIBA CORP
发明人： UI AKIO , MATSUI ISAO , NAKAMURA YOSHIAKI
IPC分类号： C23C16/44 , C23F4/00 , H01L21/302 , H01L21/3065 , H01L21/31
摘要： PURPOSE:To generate a large amount of excited oxygen in a plasma discharge area and to reduce the extinguished amount of the excited oxygen in a first reaction area so as to supply a large amount of excited oxygen to a second reaction area by supplying the excited oxygen to the first reaction area while the pressure in the first reaction area is maintained at a lower level than the plasma discharge area. CONSTITUTION:A plasma discharge section 10 and a first reaction chamber 12 are separated from each other by a nozzle 16 and the aperture of the nozzle 16 is appropriately set so that a pressure difference can be created between the section 10 and chamber 12. A large amount of excited oxygen generated in the higher-pressure section 10 is blown into the lower-pressure chamber 12 through the nozzle 16 and supplied to a second reaction chamber 13 with a less extinguished amount. Namely, a large amount of excited oxygen is generated in the higher-pressure section 1 and the extinguished amount of the excited oxygen in the lower-pressure chamber 12 is reduced. Therefore, the excited oxygen can be effectively supplied to the second reaction chamber 13.

9. 发明专利

JPS62273460A TERMINAL STRUCTURE OF WATT-HOUR METER 失效
公开(公告)号：JPS62273460A
公开(公告)日：1987-11-27
申请号：JP11612386
申请日：1986-05-22
申请人： TOKYO ELECTRIC POWER CO , FUJI ELECTRIC CO LTD , MITSUBISHI ELECTRIC CORP , TOSHIBA CORP
发明人： KOIWAI NORIO , NAKAMURA YOSHIAKI , HIRAYAMA YOSHIO
IPC分类号： G01R11/04
摘要： PURPOSE:To prevent an increase in the contact resistance, by a method wherein blade terminals (projection) of a socket terminal for separating direct connection between a power source side wire and a load side wire are built up with an insulator at least on one side thereof to come off sliding against blade receiving terminals so that the corrosion and the entry of a foreign matter will be prevented by a cleaning action. CONSTITUTION:To mount the body 20 of a watt-hour meter, blade-like terminals 24a-24d are inserted into blade receiving terminals 31a-31d of a socket terminal box 30. Here, as the length of an insulator projection 25 is shorter than the jut length of the blade-like terminals 24a and 24c, first the blade-like terminals 24a-24d are inserted into the respective terminals 31a-31d to supply power to a voltage coil 21 and a current coil 22. Then, the projection 25 is inserted into the blade receiving terminal 33 to separate the direct connection between a power source side wire 2b and a load side wire 3b. Since the projection 25 and the blade-like terminals 24a-24d are sliden against the terminal 33 and those 31a-31d respectively when inserted thereinto, any foreign matters on the respective terminals 33 and 31a-31d are forced out and any corrosion is scraped off.

10. 发明专利

JPS62200000A HYDRAULIC TRANSPORT APPARATUS 失效
公开(公告)号：JPS62200000A
公开(公告)日：1987-09-03
申请号：JP4294386
申请日：1986-02-28
申请人： TOSHIBA CORP
发明人： NAKAMURA YOSHIAKI
IPC分类号： F04F5/36 , F04F5/48
摘要： PURPOSE:To obviate pulsation by jetting a liquid mixture of high pressure heated steam and gas given through a flow controlling valve from a nozzle. CONSTITUTION:To a high pressure heated steam supplying piping 5 located between a steam jet pump A and a flow regulating valve 14 is connected a gas supply source 23 through a check valve 21 and a flow controlling valve 22. First, said valve 14 is operated to change flow of steam and roughly regulate liquid transport flow. Next, said valve 22 is operated to change a mixture amount of high pressure heated steam and gas therein and finely regulate same. Thus, even if the mixed amount of gas is increased, pulsation or the like is not generated at the liquid transport side.

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