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1. 发明专利

JP2008041774A Magnetic substance film and method of manufacturing the magnetic substance film 有权
标题翻译：磁性物质膜及制造磁性物质膜的方法
公开(公告)号：JP2008041774A
公开(公告)日：2008-02-21
申请号：JP2006211222
申请日：2006-08-02
申请人： Toshiba Corp , 株式会社東芝
发明人： MATSUI ISAO
IPC分类号： H01F10/14 , G11B5/65 , G11B5/84 , H01F10/28 , H01F41/24
CPC分类号： G11B5/7325 , B82Y25/00 , G11B5/653 , G11B5/8404 , H01F1/009 , H01F10/123 , Y10T428/24752
摘要： PROBLEM TO BE SOLVED: To provide a magnetic substance film, having perpendicular magnetic anisotropy that has high coercive force in a direction perpendicular with respect to the surface of a platinum layer. SOLUTION: A magnetic substance film comprises a platinum layer having a (001) plane orientation, and an island-shaped iron platinum crystal, arranged on the platinum layer and having the (001) plane orientation parallel to the (001) plane orientation of the platinum layer. In the magnetic substance film, the island-shaped iron platinum crystal has a composition region that has 50 atom% for iron and 50 atom% for platinum. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供具有垂直磁性各向异性的磁性物质膜，其在相对于铂层的表面垂直的方向上具有高的矫顽力。解决方案：磁性物质膜包括具有（001）面取向的铂层和布置在铂层上并具有（001）面取向平行于（001）面的岛状铁铂晶体铂层的取向。在磁性物质膜中，岛状铁铂晶体具有铁原子数为50原子％，铂为50原子％的组成区域。版权所有（C）2008，JPO＆INPIT

2. 发明专利

JP2003096508A METHOD AND EQUIPMENT FOR MANUFACTURING FINE PARTICLE 审中-公开
公开(公告)号：JP2003096508A
公开(公告)日：2003-04-03
申请号：JP2001292279
申请日：2001-09-25
申请人： TOSHIBA CORP
发明人： MATSUI ISAO
IPC分类号： B22F9/28 , B01J12/02 , B01J19/00
摘要： PROBLEM TO BE SOLVED: To provide a method and equipment for manufacturing fine particles by which fine nanometer-sized particles of uniform particle size can be manufactured. SOLUTION: A reactant-gas flow containing raw materials for the fine particles is introduced into a reactor vessel from one side, and a dilution-gas flow is introduced from the other side practically facing the reactant-gas flow. After the raw materials for the fine particles in the reactant-gas flow are heated and excited to urge the growth of the fine particles, the reactant-gas flow and the dilution-gas flow are straightened respectively in such a way that each flow velocity at the cross section of flow passage becomes practically uniform and are then allowed to join each other to stop the growth of the fine particles.

3. 发明专利

JP2001015486A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2001015486A
公开(公告)日：2001-01-19
申请号：JP18682499
申请日：1999-06-30
申请人： TOSHIBA CORP
发明人： NARITA MASAKI , YOSHIDA YUKIMASA , AOKI KATSUAKI , FUJITA HIROSHI , YAMAZAKI OSAMU , OMINE TOSHIMITSU , MATSUI ISAO , OU ROHIN , KAJI SHIGEHIKO
IPC分类号： H01L21/302 , H01L21/00 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To reduce the number of particles falling on a substrate to be treated set up in a reaction chamber, by stopping the supply of high-frequency power to the substrate after prescribed treatment is performed on the substrate, and continuously introducing a reaction gas to the chamber at the time of ending the generation of plasma. SOLUTION: After a wafer 2 is carried in the reaction chamber 1 of a plasma treatment device from a load-lock chamber and placed on a cathode electrode, a reaction gas is introduced to the chamber 1. Then, after the pressure of the reaction gas is adjusted to a prescribed value, plasma is generated by impressing a high-frequency voltage of 13.65 MHz in frequency upon the cathode electrode on which the wafer 2 is placed 2. When the generation of the plasma is ended by stopping the impression of the high-frequency power upon the cathode electrode after prescribed treatment is performed on the wafer 2 with the plasma, the reaction gas is continuously introduced to the chamber 1. Therefore, the number of particles falling on the wafer 2 can be reduced.

4. 发明专利

JP2000279754A DEVICE AND METHOD FOR REMOVING FLUORINE-CONTAINING GAS 失效
公开(公告)号：JP2000279754A
公开(公告)日：2000-10-10
申请号：JP8471499
申请日：1999-03-26
申请人： TOSHIBA CORP
发明人： MATSUI ISAO
IPC分类号： B01D53/68 , B01D53/32 , B01D53/70
摘要： PROBLEM TO BE SOLVED: To simply and efficiently remove fluorine-containing gas. SOLUTION: This device for removing the fluorine-containing gas has a plasma generating vessel 11 for decomposing the fluorine-containing gas by the plasma, a gaseous starting material supply port 12 for conducting the waste gas from a semiconductor production device to the plasma generating vessel 11, a plasma generating coil 13 for generating the plasma in the plasma generating vessel 11 and a particle capturing device for collecting particles generated in the plasma generating vessel 13. The fluorine-containing gas being the cause of atmospheric warming is efficiently removed since the particles high in molecular weight are formed by causing plasma reaction to the fluorine-containing gas generated in the semiconductor production device in the plasma generated vessel 11.

5. 发明专利

JPH03119721A CRYSTAL GROWTH 失效
公开(公告)号：JPH03119721A
公开(公告)日：1991-05-22
申请号：JP25545689
申请日：1989-09-30
申请人： TOSHIBA CORP
发明人： OMINE TOSHIMITSU , MATSUI ISAO
IPC分类号： H01L21/205
摘要： PURPOSE:To obtain a high-quality crystal by setting a crystal growth temperature at a high temperature by a method wherein a gas containing an inert gas is used as a carrier gas. CONSTITUTION:In a method by which a group III alkyl compound and a group V gaseous raw material are supplied alternately to grow a crystal, a gas containing an inert gas is used as a carrier gas. Then, it ls possible to restrain that radical atoms produced by a decomposition of the group III alkyl compound produce other radical atoms; a crystal growth temperature can be raised. It is desirable to mix hydrogen at 50% or below with the carrier gas. Thereby, a migration is carried out sufficiently; a defect in the crystal can be reduced; a high-quality crystal can be obtained.

6. 发明专利

JPS6261317A VAPOR GROWTH METHOD 失效
公开(公告)号：JPS6261317A
公开(公告)日：1987-03-18
申请号：JP19949385
申请日：1985-09-11
申请人： TOSHIBA CORP
发明人： HATA KENJI , MATSUI ISAO
IPC分类号： H01L21/205
摘要： PURPOSE:To obtain the crystal of a uniform thickness by a method wherein a plurality of gas feeding holes are provided in such a manner that the cross-sectional area of the holes are formed large in the center part and they are formed small on the outer circumferential part. CONSTITUTION:The raw gas introduced from an introducing pipe 6 is discharged from a nozzle 6a having a large cross-section in the center part and a small cross-section on the outer circumferential part. As a result, the trouble of insufficient crystal growth on the circumferential part of a substrate generated in the past when a large quantity of gas is flowed can be removed, and the thickness of crystal can be made almost uniform on each position of the substrate. Also, the nozzle part 6a has a hollow structure, and the formation of a reaction product on the nozzle part 6a can be prevented by the radiant heat of a heating device 5 by flowing the cooling medium such as water and the like in the vacant space provided in the nozzle 6a.

7. 发明专利

JP2004322237A Particle arranging base board and its manufacturing method 审中-公开
公开(公告)号：JP2004322237A
公开(公告)日：2004-11-18
申请号：JP2003117425
申请日：2003-04-22
申请人： Toshiba Corp , 株式会社東芝
发明人： RICHARD DAVID TILLY , SAITO SATOSHI , HIEDA YASUYUKI , MATSUI ISAO , KIKITSU SATORU
IPC分类号： B82B3/00 , G11B5/714 , G11B5/738 , G11B5/84
摘要： PROBLEM TO BE SOLVED: To provide a particle arranging base board, and its method for enhancing a covering rate of particles and easily arranging the nanoparticles over a wide area.
SOLUTION: This particle arranging base board has a base board 1, a hydrophobic layer 2 arranged on the base board 1, and including a silane compound having a fluoroalkyl group, and the nanoparticles 3 arranged on the hydrophobic layer 2.
COPYRIGHT: (C)2005,JPO&NCIPI

8. 发明专利

JP2000279800A CHEMICAL REACTION PREDICTING DEVICE AND METHOD OF PREDICTING CHEMICAL REACTION 失效
公开(公告)号：JP2000279800A
公开(公告)日：2000-10-10
申请号：JP8463199
申请日：1999-03-26
申请人： TOSHIBA CORP
发明人： MATSUI ISAO
IPC分类号： B01J19/00 , C23C16/00 , G06F17/17
摘要： PROBLEM TO BE SOLVED: To calculate the produced quantities of product seeds with high accuracy in a short calculation time. SOLUTION: This chemical reaction predicting device is provided with: a first calculating part 1 for calculating the concentration of each product seed using all rate equations showing time-depending change of the produced quantity (concentration) of each product seed, a second calculating part 2 for recalculating the concentration of each product seed based on the calculated results of the first calculating part 1, a judging part 3 for comparing the calculated results of the first and second calculating parts 1, 2, and a third calculating part 4 for recalculating the concentration of each product seed based on the judged results of the judging part 3 to predict the concentration. After all the rate equations are made into simultaneous equation in the first calculating part 1 to calculate the concentration of each product seed, when the errors in the calculations do not exceed the prescribed range, in the second and third calculating parts 2, 4, the product seeds of low concentration are removed in order from the rate equation group to calculate the concentration of each product seed, thereby calculating the time-depending change in the concentration of each product seed with high accuracy in a short time.

9. 发明专利

JPS6278189A DEVICE FOR GASEOUS-PHASE GROWTH 失效
公开(公告)号：JPS6278189A
公开(公告)日：1987-04-10
申请号：JP21712685
申请日：1985-09-30
申请人： TOSHIBA CORP
发明人： MATSUI ISAO
IPC分类号： C30B25/12 , C30B25/14 , H01L21/205
摘要： PURPOSE:To uniformly carry out crystal growth on a substrate, to abruptly change a gas composition and to aim improvement in yield, by equipping a central part of crystal substrate kept in a reaction furnace body with a connecting part to send a reaction gas to a surface side. CONSTITUTION:A reaction is blown from a reaction gas feed opening 15 set at a top central part of a reaction furnace body 1 to the surface of a crystal substrate 7 supported on a susceptor 5. The reaction gas, for example, consists of a mixed gas trimethylgallium, trimethylaluminum and arsine. Then, the reaction gas blown to the surface of the crystal substrate 7 grows as crystal on the surface of the crystal substrate heated to a desired temperature by a high-frequency induction heater 19. The reaction gas flows down from a hole 13 of the crystal substrate 7 through an open hole 14 of the susceptor 5 and a space part 9 during the reaction. Simultaneously the gas flows down through a space part 21 between a circumference part 5a of the susceptor 5 and an inner wall 1b of the reaction furance 1 and is exhausted from a reaction gas outlet 17 set at the bottom of the reaction furnace body 1 to the outside of the furnace.

10. 发明专利

JP2009054872A Manufacturing method for magnetic material film, and the magnetic material film 有权
标题翻译：磁性材料薄膜的制造方法及磁性材料薄膜
公开(公告)号：JP2009054872A
公开(公告)日：2009-03-12
申请号：JP2007221544
申请日：2007-08-28
申请人： Toshiba Corp , 株式会社東芝
发明人： MATSUI ISAO
IPC分类号： H01F41/24
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a magnetic material film having vertical magnetic anisotropy, which has a high coercive force perpendicular with respect to a surface of a platinum layer or silver layer formed on a base material surface, and the magnetic material film having vertical magnetic anisotropy, formed by the manufacturing method which has high coercive force perpendicular with respect to the surface of the platinum layer or silver layer formed on the base material surface.
SOLUTION: The manufacturing method of the magnetic material film 8 includes a process S1 of forming a coating layer 3, by coating the platinum layer 1 formed on the surface of the base material 9 and having a (001) plane direction with a liquid containing iron-platinum particles 2, containing exceeding 50% by atom of iron components; or a process S1 of forming a coating layer 3 by coating the silver layer 1, formed on the surface of the base material 9 and having a (001) plane direction with a liquid, containing iron-platinum particles 2 containing 40 to 60% by atom of iron components; a process S2 of removing the iron-platinum particles 2 and sticking bodies (5, 6) on the surface of the platinum layer 1; and a process S4 of heating.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种制造具有垂直磁各向异性的磁性材料膜的方法，该磁性材料膜具有相对于在基材表面上形成的铂层或银层的表面垂直的高矫顽力，以及具有垂直磁各向异性的磁性材料膜通过相对于形成在基材表面上的铂层或银层的表面垂直的矫顽力高的制造方法形成。解决方案：磁性材料膜8的制造方法包括通过将形成在基材9的表面上并具有（001）面方向的铂层1涂覆在其上的方法S1，形成涂层3 含有铁含量超过50％的铁组分的铁 - 铂颗粒2的液体; 或通过在基材9的表面上形成具有（001）面方向的银层1形成涂层3的工序S1，该液晶层含有含有40〜60％的铁 - 铂颗粒2的含有铁成分原子; 去除铂层1的表面上的铁 - 铂颗粒2和粘附体（5,6）的工艺S2; 以及加热处理S4。版权所有（C）2009，JPO＆INPIT

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