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1. 发明专利

JP2002087878A PLASMA RESISTANT MEMBER AND ITS MANUFACTURING METHOD 失效
公开(公告)号：JP2002087878A
公开(公告)日：2002-03-27
申请号：JP2001036819
申请日：2001-02-14
申请人： TOSHIBA CERAMICS CO , TOSHIBA CORP
发明人： MIYAZAKI AKIRA , FUJITA MITSUHIRO , SHIMAI SHUNZO , MORITA TAKASHI , SUZUKI SHUNICHI , SAITO SHUICHI , AOKI KATSUAKI , NISHIMURA ERIKO
IPC分类号： C04B35/44 , C23C14/34 , C23C16/44
摘要： PROBLEM TO BE SOLVED: To provide a plasma resistant member of low cost type which is also excellent in mechanical strengths such as bending strength and toughness and to provide its manufacturing method. SOLUTION: The plasma resistant member of this invention is distinguished by being substantially made of yttrium aluminum garnet sintered compact and by that the inside of the sintered compact or sintered compact structure is reinforced by proper selection of average crystalline grain size of the sintered compact and addition and incorporation or the like of a reinforcing agent.

2. 发明专利

JP2002037683A PLASMA RESISTANT ELEMENT AND ITS MANUFACTURING METHOD 失效
公开(公告)号：JP2002037683A
公开(公告)日：2002-02-06
申请号：JP2000221844
申请日：2000-07-24
申请人： TOSHIBA CERAMICS CO , TOSHIBA CORP
发明人： UCHIMARU TOMONORI , MORITA TAKASHI , ICHIJIMA MASAHIKO , UENO HIROKO , SAITO SHUICHI , AOKI KATSUAKI , NISHIMURA ERIKO
IPC分类号： C04B41/87 , C23C14/06 , H01L21/302 , H01L21/3065 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To provide a low cost plasma resistant element and its manufacturing method having high plasma resistant property also excellent in mechanical properties such as bending strength and toughness. SOLUTION: This plasma resistant element 15 is characterized by having a base material 13 consisting of a ceramics group sintered body and a fluoride layer 14 of the thickness 1 to 100 μm containing not less than one kind of element selected from the periodic table IIA group elements and IIIA group elements formed on the surface of the above base material 13.

3. 发明专利

JP2002029832A PLASMA RESISTANT MEMBER AND METHOD FOR MANUFACTURING THE SAME 失效
公开(公告)号：JP2002029832A
公开(公告)日：2002-01-29
申请号：JP2000218389
申请日：2000-07-19
申请人： TOSHIBA CERAMICS CO , TOSHIBA CORP
发明人： ICHIJIMA MASAHIKO , FUJITA MITSUHIRO , SAITO SHUICHI , AOKI KATSUAKI , NISHIMURA ERIKO
IPC分类号： H05H1/46 , B01J19/08 , C04B35/44 , C04B35/64 , C04B41/80 , C23C14/50 , C23C16/458 , H01L21/203 , H01L21/205 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a plasma resistant member which sufficiently withstands exposure of a low-pressure, high-density plasma, and a method for manufacturing the same. SOLUTION: This plasma resistant member consists substantially of a sintered yttrium aluminate garnet compact and is characterized in that fluorine elements are bonded to the oxygen defect ion site in the crystal and the yttrium in the surface region. The manufacturing method has a process for subjecting an yttrium aluminate garnet molding to calcining and degreasing treatment, a process for introducing defects into the oxygen ion site in the crystal by vacuum sintering of the molding subjected to the calcining and degreasing treatment and a process 8 bonding fluorine elements to the oxygen defect ion site and the yttrium of the surface region by subjecting the sintered compact introduced with the defects in the oxygen ion site described above to fluorination treatment.

4. 发明专利

JP2002029831A PLASMA RESISTANT MEMBER AND METHOD FOR MANUFACTURING THE SAME 失效
公开(公告)号：JP2002029831A
公开(公告)日：2002-01-29
申请号：JP2000218339
申请日：2000-07-19
申请人： TOSHIBA CERAMICS CO , TOSHIBA CORP
发明人： MORITA TAKASHI , ICHIJIMA MASAHIKO , FUJITA MITSUHIRO , MIYAZAKI AKIRA , SHIMAI SHUNZO , SAITO SHUICHI , AOKI KATSUAKI , NISHIMURA ERIKO
IPC分类号： C04B35/44 , C04B35/50 , H01L21/205 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a plasma resistant member which sufficiently withstands exposure of a corrosion resistant plasma and with which the peeling, desorbing, etc. of a deposited film are sufficiently suppressed and prevented. SOLUTION: At least the surface part of a first invention consists substantially of a sintered yttrium aluminate garnet compact and its mean surface roughness (Ra) is 1.2 to 2.5 μm. At least the surface part of a second invention consists substantially of the sintered yttrium aluminate garnet compact and the tangent angle θ of the rugged surface of the surface part to a horizontal plane is -55 to +55 deg..

5. 发明专利

JP2002293630A PLASMA RESISTANT MEMBER AND METHOD OF PRODUCING THE SAME 失效
公开(公告)号：JP2002293630A
公开(公告)日：2002-10-09
申请号：JP2001095855
申请日：2001-03-29
申请人： TOSHIBA CERAMICS CO , TOSHIBA CORP
发明人： UCHIMARU TOMONORI , MORITA TAKASHI , SAITO SHUICHI , AOKI KATSUAKI , NISHIMURA ERIKO
IPC分类号： C04B41/80 , C04B35/44 , C04B35/50 , C04B41/87 , C23C16/44 , H01L21/203 , H01L21/205 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a plasma resistant member exhibiting sufficient durability to plasma when it is exposed to low pressure and high density plasma, and to provide a method of producing the same. SOLUTION: The plasma resistant member is substantially composed of an oxide-based sintered compact of an element of group IIIA of the Periodic Table, such as an yttrium aluminum garnet sintered compact, and at least a part of the surface layer of the plasma resistant member is formed from only a fluoride of the element of group IIIA. The method of producing the plasma resistant member includes a process for subjecting a formed body of an oxide of the element of group IIIA of the Periodic Table, such as a yttrium aluminum garnet system to calcination/ debinder treatment and a process for vacuum sintering the formed body subjected to the calcination /debinder treatment and, and a process for forming a fluoride of the element of group IIIA in the surface layer by subjecting the vacuum sintered compact to fluorination treatment.

6. 发明专利

JP2002029830A PLASMA RESISTANT MEMBER AND METHOD FOR MANUFACTURING THE SAME 失效
公开(公告)号：JP2002029830A
公开(公告)日：2002-01-29
申请号：JP2000214198
申请日：2000-07-14
申请人： TOSHIBA CERAMICS CO , TOSHIBA CORP
发明人： ICHIJIMA MASAHIKO , FUJITA MITSUHIRO , SAITO SHUICHI , AOKI KATSUAKI , NISHIMURA ERIKO
IPC分类号： H05H1/46 , C04B35/44 , C04B35/638 , C04B35/64 , C23C16/44 , H01L21/205 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a plasma resistant member which sufficiently withstands exposure of a low-pressure high-density plasma, and a method for manufacturing the same. SOLUTION: This plasma resistant member substantially consists of a sintered yttrium aluminate garnet compact and is >=70 in the color difference in an L*a*b* color specification system at surface roughness (Ra) of

7. 发明专利

JP2012064805A Led lamp 有权
标题翻译：点灯
公开(公告)号：JP2012064805A
公开(公告)日：2012-03-29
申请号：JP2010208430
申请日：2010-09-16
申请人： Toshiba Corp , Toshiba Materials Co Ltd , 東芝マテリアル株式会社 , 株式会社東芝
发明人： AOKI KATSUAKI
IPC分类号： H01L33/48 , H01L33/50
摘要： PROBLEM TO BE SOLVED: To provide an LED lamp enabling an user to select the luminescent color (a light emission spectrum), an orientation angle (directivity) of light, and lamp design, according to a preference of the user or a use place, in one lamp body.SOLUTION: An LED lamp comprises: a substrate 7; an LED module 2 having an LED chip 8 mounted on the substrate 7; a base body portion 3 on which the LED module 2 is installed; a globe 4a attached to the base body portion 3 so as to cover the LED module 2 with a space; a fluorescent film 9 provided on an inner surface of the globe 4a while separated from the LED chip 8, and absorbing ultraviolet or violet light emitted from the LED chip 8 to emit visible light; a lighting circuit 11 provided in the base body portion 3, and lighting the LED chip 8; and an attaching/detaching mechanism 12 having a mouthpiece 6 electrically connected with the lighting circuit 11, and making the globe 4a and the base body portion 3a attachable and detachable.
摘要翻译：要解决的问题：提供一种LED灯，其使得用户能够根据用户的偏好或者一个或多个选择来选择发光颜色（发光光谱），光的取向角（方向性）和灯设计使用场所，在一个灯体内。解决方案：LED灯包括：基板7; 具有安装在基板7上的LED芯片8的LED模块2; 安装有LED模块2的基体部3; 附接到基体部分3以以空间覆盖LED模块2的球形体4a; 在与LED芯片8分离的同时设置在灯泡4a的内表面上的荧光膜9，吸收从LED芯片8发出的发出可见光的紫外线或紫色光; 设置在基体部3内的照明电路11，点亮LED芯片8; 以及安装/拆卸机构12，其具有与照明电路11电连接的接口管6，并且使得灯罩4a和基座部分3a可拆卸。版权所有（C）2012，JPO＆INPIT

8. 发明专利

JP2003347063A Organic electroluminescent display element and manufacturing method therefor 审中-公开
标题翻译：有机电致发光显示元件及其制造方法
公开(公告)号：JP2003347063A
公开(公告)日：2003-12-05
申请号：JP2002149134
申请日：2002-05-23
申请人： Toshiba Corp , 株式会社東芝
发明人： SAWADA MASAHITO , AOKI KATSUAKI , SAITO MAKOTO , KATSUMATA YUTAKA , NISHIMURA ERIKO
IPC分类号： H05B33/26 , H01L51/50 , H05B33/14 , H05B33/22
摘要： PROBLEM TO BE SOLVED: To provide an organic EL (electroluminescent) display element provided with an anode made of ITO having resistance to a strongly acidic hole transport layer such as a PEDOT-PSS.
SOLUTION: This organic electroluminescent display element is provided with a glass substrate, the anode made of indium tin oxide and formed on the substrate, the strongly acidic hole transport layer formed on the anode, an organic electroluminescent light emitting layer and a cathode formed on the light emitting layer. In the anode made of indium tin oxide, a In
2 O
3 layer is formed on a surface on a side in contact with the hole transport layer.
COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供一种具有由耐腐蚀性强的空穴传输层（例如PEDOT-PSS）制成的具有ITO的阳极的有机EL（电致发光）显示元件。解决方案：该有机电致发光显示元件设置有玻璃基板，由氧化铟锡制成的阳极，形成在基板上，形成在阳极上的强酸性空穴传输层，有机电致发光发光层和阴极形成在发光层上。在由铟锡氧化物制成的阳极中，在与空穴传输层接触的一侧上的表面上形成了一种In 2 3 层。版权所有（C）2004，JPO

9. 发明专利

JP2001015486A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2001015486A
公开(公告)日：2001-01-19
申请号：JP18682499
申请日：1999-06-30
申请人： TOSHIBA CORP
发明人： NARITA MASAKI , YOSHIDA YUKIMASA , AOKI KATSUAKI , FUJITA HIROSHI , YAMAZAKI OSAMU , OMINE TOSHIMITSU , MATSUI ISAO , OU ROHIN , KAJI SHIGEHIKO
IPC分类号： H01L21/302 , H01L21/00 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To reduce the number of particles falling on a substrate to be treated set up in a reaction chamber, by stopping the supply of high-frequency power to the substrate after prescribed treatment is performed on the substrate, and continuously introducing a reaction gas to the chamber at the time of ending the generation of plasma. SOLUTION: After a wafer 2 is carried in the reaction chamber 1 of a plasma treatment device from a load-lock chamber and placed on a cathode electrode, a reaction gas is introduced to the chamber 1. Then, after the pressure of the reaction gas is adjusted to a prescribed value, plasma is generated by impressing a high-frequency voltage of 13.65 MHz in frequency upon the cathode electrode on which the wafer 2 is placed 2. When the generation of the plasma is ended by stopping the impression of the high-frequency power upon the cathode electrode after prescribed treatment is performed on the wafer 2 with the plasma, the reaction gas is continuously introduced to the chamber 1. Therefore, the number of particles falling on the wafer 2 can be reduced.

10. 发明专利

JPH05308059A 失效
公开(公告)号：JPH05308059A
公开(公告)日：1993-11-19
申请号：JP3903392
申请日：1992-02-26
申请人： TOSHIBA CORP
发明人： SHIMIZU MASATOSHI , AOKI KATSUAKI
IPC分类号： C23F4/00 , H01L21/302 , H01L21/3065 , H05H1/46
摘要： PURPOSE:To make the distribution of plasma in a chamber uniform by providing a nozzle on the boundary between an etching treatment chamber and a plasma generating chamber. CONSTITUTION:A reaction gas is supplied from a reaction gas supply pipe 52 and introduced into a space part in a nozzle 31. The introduced reaction gas is supplied into a plasma generating chamber 33 uniformly virtually from each jetting hole. This supplied reaction gas enters an etching treatment chamber 34 through each vent hole and further it is exhausted in a prescribed amount from an exhaust pipe 39. Meanwhile, a microwave generated in a microwave generating part is led to a waveguide 40, passes through a quartz window 32 and discharges electricity inside a plasma generating chamber 33. By this discharge, plasma by the reaction gas is generated and active particles are generated. Since the reaction gas is supplied uniformly virtually in the process of generation of these active particles, not a partial discharge, but a uniform discharge as a whole is obtained inside the plasma generating chamber 33, the distribution of the plasma becomes uniform as well and thus an etching treatment uniform for a body 55 to be treated can be attained.

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