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1. 发明专利

JP2003347063A Organic electroluminescent display element and manufacturing method therefor 审中-公开
标题翻译：有机电致发光显示元件及其制造方法
公开(公告)号：JP2003347063A
公开(公告)日：2003-12-05
申请号：JP2002149134
申请日：2002-05-23
申请人： Toshiba Corp , 株式会社東芝
发明人： SAWADA MASAHITO , AOKI KATSUAKI , SAITO MAKOTO , KATSUMATA YUTAKA , NISHIMURA ERIKO
IPC分类号： H05B33/26 , H01L51/50 , H05B33/14 , H05B33/22
摘要： PROBLEM TO BE SOLVED: To provide an organic EL (electroluminescent) display element provided with an anode made of ITO having resistance to a strongly acidic hole transport layer such as a PEDOT-PSS.
SOLUTION: This organic electroluminescent display element is provided with a glass substrate, the anode made of indium tin oxide and formed on the substrate, the strongly acidic hole transport layer formed on the anode, an organic electroluminescent light emitting layer and a cathode formed on the light emitting layer. In the anode made of indium tin oxide, a In
2 O
3 layer is formed on a surface on a side in contact with the hole transport layer.
COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供一种具有由耐腐蚀性强的空穴传输层（例如PEDOT-PSS）制成的具有ITO的阳极的有机EL（电致发光）显示元件。解决方案：该有机电致发光显示元件设置有玻璃基板，由氧化铟锡制成的阳极，形成在基板上，形成在阳极上的强酸性空穴传输层，有机电致发光发光层和阴极形成在发光层上。在由铟锡氧化物制成的阳极中，在与空穴传输层接触的一侧上的表面上形成了一种In 2 3 层。版权所有（C）2004，JPO

2. 发明专利

JP2006093445A Oxide film forming method 审中-公开
标题翻译：氧化膜成型方法
公开(公告)号：JP2006093445A
公开(公告)日：2006-04-06
申请号：JP2004277911
申请日：2004-09-24
申请人： Toshiba Corp , 株式会社東芝
发明人： KATSUMATA YUTAKA , SAITO MAKOTO , FUJITA HIROSHI , NISHIMURA ERIKO
IPC分类号： H01L21/316 , H01L21/336 , H01L29/78 , H01L29/786
CPC分类号： H01L21/02238 , H01L21/02255 , H01L21/31675
摘要： PROBLEM TO BE SOLVED: To provide a method and a device for forming an oxide film of good quality with little damage at a low temperature.
SOLUTION: In the oxide film forming method, the oxide film is locally formed on a substrate surface layer by jetting a high-pressure solution comprising an oxidation source on a substrate surface. A substrate treatment device has an installation stand on which a substrate is installed, a supply source of a solution comprising the oxide source, a means for giving pressure to the solution, and a supply nozzle for jetting the solution by pressure to the substrate surface.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种在低温下几乎没有损坏形成质量好的氧化膜的方法和装置。解决方案：在氧化膜形成方法中，通过在衬底表面上喷射包含氧化源的高压溶液，将氧化膜局部形成在衬底表面层上。基板处理装置具有安装基板的安装台，包括氧化物源的溶液的供给源，向溶液施加压力的装置以及用于通过压力将溶液喷射到基板表面的供给喷嘴。版权所有（C）2006，JPO＆NCIPI

3. 发明专利

JP2002087878A PLASMA RESISTANT MEMBER AND ITS MANUFACTURING METHOD 失效
公开(公告)号：JP2002087878A
公开(公告)日：2002-03-27
申请号：JP2001036819
申请日：2001-02-14
申请人： TOSHIBA CERAMICS CO , TOSHIBA CORP
发明人： MIYAZAKI AKIRA , FUJITA MITSUHIRO , SHIMAI SHUNZO , MORITA TAKASHI , SUZUKI SHUNICHI , SAITO SHUICHI , AOKI KATSUAKI , NISHIMURA ERIKO
IPC分类号： C04B35/44 , C23C14/34 , C23C16/44
摘要： PROBLEM TO BE SOLVED: To provide a plasma resistant member of low cost type which is also excellent in mechanical strengths such as bending strength and toughness and to provide its manufacturing method. SOLUTION: The plasma resistant member of this invention is distinguished by being substantially made of yttrium aluminum garnet sintered compact and by that the inside of the sintered compact or sintered compact structure is reinforced by proper selection of average crystalline grain size of the sintered compact and addition and incorporation or the like of a reinforcing agent.

4. 发明专利

JP2002124460A FORMATION METHOD OF RESIST PATTERN 审中-公开
公开(公告)号：JP2002124460A
公开(公告)日：2002-04-26
申请号：JP2001229880
申请日：2001-07-30
申请人： SUGITA KAZUYUKI , TOSHIBA CORP
发明人： SUGITA KAZUYUKI , SAITO SHUICHI , TAKASHIMA MASAO , NAGATOMO MIKI , ISOGAWA MASAKUNI , NISHIMURA ERIKO
IPC分类号： G03F7/039 , G03F7/38 , G03F7/40 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a method for forming a resist pattern with relatively large thickness and high resolution by using the light with short wavelength such as deep UV rays as an exposure source. SOLUTION: The formation method of a resist pattern comprises a process for forming a positive-type chemical amplification resist film containing a polymer having a hydroxyl group and an optical acid generation agent on a substrate to be etched, a process for silylating the polymer on the surface of the resist film by allowing the resist film to react with a compound containing a silicon element, a process for selectively applying deep ultraviolet rays or ionization radiation to the silylated resist film, a process for the desilylating polymer at the exposure section on the surface of the resist film into desilylutin by heating the resist film in a vapor atmosphere after exposure, a process for selectively removing the exposure section by desired depth by development, and a process for further removing a resist film part that is located at the exposure section with a non-exposed section as a mask by dry etching using gas containing oxygen.

5. 发明专利

JPH0495852A DUST-GENERATING SUBSTANCE ANALYZER 失效
公开(公告)号：JPH0495852A
公开(公告)日：1992-03-27
申请号：JP21460190
申请日：1990-08-14
申请人： TOSHIBA CORP
发明人： NISHIMURA ERIKO , NISHIMURA HIROSHI
IPC分类号： G01N15/06 , G01N21/35 , G01N21/3504
摘要： PURPOSE:To identify a material of a dust-generating substance in a clean room rapidly and easily and also identify a generation source easily by checking analysis data of a substance which is expected to generate dust against analysis data of a measured dust-generating substance. CONSTITUTION:Members used in a clean room are sampled in advance as substances which are supposed to generate dust. These are measured by muFT-IR, and an infrared spectrum is stored as a data base together with related data such as a dust-generating substance name, a use site, measurement conditions and registered in a storage unit 1. Then a dust-generating substance is sampled by a working process in the clean room to be measured by mu FT-IR. Then a measured spectrum is processed by software which searches and checks the spectrum against the spectrum in the dust-generating source data base, and spectra are reviewed from the one with the highest potential to find out a corresponding spectrum in the dust-generating source data base. Since related data is called in the dust generating data base together with the corresponding spectrum, the dust-generating substance can be identified easily.

6. 发明专利

JP2003095735A PLASMA RESISTING MEMBER, AND PRODUCTION METHOD THEREFOR 审中-公开
公开(公告)号：JP2003095735A
公开(公告)日：2003-04-03
申请号：JP2001284262
申请日：2001-09-19
申请人： TOSHIBA CERAMICS CO , TOSHIBA CORP
发明人： ICHIJIMA MASAHIKO , MIYAZAKI AKIRA , FUJITA MITSUHIRO , SUZUKI SHUNICHI , SAITO SHUICHI , NISHIMURA ERIKO
IPC分类号： C04B35/44 , B01J3/00 , B01J19/02 , B01J19/08 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a plasma resistant member which sufficiently withstands low-pressure, high-density plasma exposure, and to provide a production method therefor. SOLUTION: The plasma resistant member substantially consists of a yttrium garnet aluminate sintered compact, and, the ratio of unreacted alumina parts (alumina colonies) in the sintered compact structure is

7. 发明专利

JP2002293630A PLASMA RESISTANT MEMBER AND METHOD OF PRODUCING THE SAME 失效
公开(公告)号：JP2002293630A
公开(公告)日：2002-10-09
申请号：JP2001095855
申请日：2001-03-29
申请人： TOSHIBA CERAMICS CO , TOSHIBA CORP
发明人： UCHIMARU TOMONORI , MORITA TAKASHI , SAITO SHUICHI , AOKI KATSUAKI , NISHIMURA ERIKO
IPC分类号： C04B41/80 , C04B35/44 , C04B35/50 , C04B41/87 , C23C16/44 , H01L21/203 , H01L21/205 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a plasma resistant member exhibiting sufficient durability to plasma when it is exposed to low pressure and high density plasma, and to provide a method of producing the same. SOLUTION: The plasma resistant member is substantially composed of an oxide-based sintered compact of an element of group IIIA of the Periodic Table, such as an yttrium aluminum garnet sintered compact, and at least a part of the surface layer of the plasma resistant member is formed from only a fluoride of the element of group IIIA. The method of producing the plasma resistant member includes a process for subjecting a formed body of an oxide of the element of group IIIA of the Periodic Table, such as a yttrium aluminum garnet system to calcination/ debinder treatment and a process for vacuum sintering the formed body subjected to the calcination /debinder treatment and, and a process for forming a fluoride of the element of group IIIA in the surface layer by subjecting the vacuum sintered compact to fluorination treatment.

8. 发明专利

JP2002029830A PLASMA RESISTANT MEMBER AND METHOD FOR MANUFACTURING THE SAME 失效
公开(公告)号：JP2002029830A
公开(公告)日：2002-01-29
申请号：JP2000214198
申请日：2000-07-14
申请人： TOSHIBA CERAMICS CO , TOSHIBA CORP
发明人： ICHIJIMA MASAHIKO , FUJITA MITSUHIRO , SAITO SHUICHI , AOKI KATSUAKI , NISHIMURA ERIKO
IPC分类号： H05H1/46 , C04B35/44 , C04B35/638 , C04B35/64 , C23C16/44 , H01L21/205 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a plasma resistant member which sufficiently withstands exposure of a low-pressure high-density plasma, and a method for manufacturing the same. SOLUTION: This plasma resistant member substantially consists of a sintered yttrium aluminate garnet compact and is >=70 in the color difference in an L*a*b* color specification system at surface roughness (Ra) of

9. 发明专利

JP2002037683A PLASMA RESISTANT ELEMENT AND ITS MANUFACTURING METHOD 失效
公开(公告)号：JP2002037683A
公开(公告)日：2002-02-06
申请号：JP2000221844
申请日：2000-07-24
申请人： TOSHIBA CERAMICS CO , TOSHIBA CORP
发明人： UCHIMARU TOMONORI , MORITA TAKASHI , ICHIJIMA MASAHIKO , UENO HIROKO , SAITO SHUICHI , AOKI KATSUAKI , NISHIMURA ERIKO
IPC分类号： C04B41/87 , C23C14/06 , H01L21/302 , H01L21/3065 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To provide a low cost plasma resistant element and its manufacturing method having high plasma resistant property also excellent in mechanical properties such as bending strength and toughness. SOLUTION: This plasma resistant element 15 is characterized by having a base material 13 consisting of a ceramics group sintered body and a fluoride layer 14 of the thickness 1 to 100 μm containing not less than one kind of element selected from the periodic table IIA group elements and IIIA group elements formed on the surface of the above base material 13.

10. 发明专利

JP2002029832A PLASMA RESISTANT MEMBER AND METHOD FOR MANUFACTURING THE SAME 失效
公开(公告)号：JP2002029832A
公开(公告)日：2002-01-29
申请号：JP2000218389
申请日：2000-07-19
申请人： TOSHIBA CERAMICS CO , TOSHIBA CORP
发明人： ICHIJIMA MASAHIKO , FUJITA MITSUHIRO , SAITO SHUICHI , AOKI KATSUAKI , NISHIMURA ERIKO
IPC分类号： H05H1/46 , B01J19/08 , C04B35/44 , C04B35/64 , C04B41/80 , C23C14/50 , C23C16/458 , H01L21/203 , H01L21/205 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a plasma resistant member which sufficiently withstands exposure of a low-pressure, high-density plasma, and a method for manufacturing the same. SOLUTION: This plasma resistant member consists substantially of a sintered yttrium aluminate garnet compact and is characterized in that fluorine elements are bonded to the oxygen defect ion site in the crystal and the yttrium in the surface region. The manufacturing method has a process for subjecting an yttrium aluminate garnet molding to calcining and degreasing treatment, a process for introducing defects into the oxygen ion site in the crystal by vacuum sintering of the molding subjected to the calcining and degreasing treatment and a process 8 bonding fluorine elements to the oxygen defect ion site and the yttrium of the surface region by subjecting the sintered compact introduced with the defects in the oxygen ion site described above to fluorination treatment.

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