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1. 发明授权

US08864931B2 Mask trimming 有权
标题翻译：面膜修剪
公开(公告)号：US08864931B2
公开(公告)日：2014-10-21
申请号：US12907899
申请日：2010-10-19
申请人： Supriya Goyal , Dongho Heo , Jisoo Kim , S. M. Reza Sadjadi
发明人： Supriya Goyal , Dongho Heo , Jisoo Kim , S. M. Reza Sadjadi
IPC分类号： H01L21/306 , C23F1/00 , H01L21/033
CPC分类号： H01L21/0338
摘要： A method for etching a dielectric layer is provided. A patterned mask with mask features is formed over a dielectric layer. The mask has isolated areas and dense areas of the mask features. The mask is trimmed by a plurality of cycles, where each cycle includes depositing a deposition layer, and selectively etching the deposition layer and the patterned mask. The selective etching selectively trims the isolated areas of the mask with respect to the dense areas of the mask. The dielectric layer is etched using the thus trimmed mask. The mask is removed.
摘要翻译：提供了蚀刻介电层的方法。在介电层上形成具有掩模特征的图案化掩模。面具具有隔离区域和密集区域的面具功能。掩模被多个周期修剪，其中每个周期包括沉积沉积层，以及选择性地蚀刻沉积层和图案化掩模。选择性蚀刻相对于掩模的密集区域选择性地修剪掩模的隔离区域。使用如此修整的掩模蚀刻电介质层。去除面具。

2. 发明授权

US07785484B2 Mask trimming with ARL etch 有权
标题翻译： ARL蚀刻掩模修剪
公开(公告)号：US07785484B2
公开(公告)日：2010-08-31
申请号：US11841209
申请日：2007-08-20
申请人： Dongho Heo , Supriya Goyal , Jisoo Kim , S. M. Reza Sadjadi
发明人： Dongho Heo , Supriya Goyal , Jisoo Kim , S. M. Reza Sadjadi
IPC分类号： B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00
CPC分类号： H01L21/0335 , H01L21/0334
摘要： A method for etching a dielectric layer disposed below an antireflection layer (ARL) is provided. The method comprises (a) forming a patterned mask with mask features over the ARL, the mask having isolated areas and dense areas of the mask features, (b) trimming and opening, and (c) etching the dielectric layer using the trimmed mask. The trimming and opening comprises a plurality of cycles, where each cycle includes (b1) a trim-etch phase which etches the ARL in a bottom of the mask features and selectively trims the isolated areas of the mask with respect to the dense areas, and (b2) a deposition-etch phase which deposits a deposition layer on the mask while further etching the ARL in the bottom of the mask features. The trimming and opening result in a net trimming of the mask in the isolated areas.
摘要翻译：提供了一种用于蚀刻设置在抗反射层（ARL）下方的电介质层的方法。该方法包括（a）在ARL上形成具有掩模特征的图案化掩模，掩模具有隔离区域和掩模特征的密集区域，（b）修剪和打开，以及（c）使用修剪的掩模蚀刻介电层。修整和打开包括多个周期，其中每个周期包括（b1）修剪蚀刻阶段，其蚀刻掩模特征的底部中的ARL并相对于密集区域选择性地修整掩模的隔离区域，以及（b2）沉积蚀刻阶段，其在掩模上沉积沉积层，同时进一步蚀刻掩模特征底部的ARL。修剪和打开导致隔离区域中的面罩的净修整。

3. 发明授权

US08172948B2 De-fluoridation process 有权
标题翻译：脱氟工艺
公开(公告)号：US08172948B2
公开(公告)日：2012-05-08
申请号：US11934023
申请日：2007-11-01
申请人： Dongho Heo , Jisoo Kim , S. M. Reza Sadjadi
发明人： Dongho Heo , Jisoo Kim , S. M. Reza Sadjadi
IPC分类号： H01L21/00 , C23C16/00
CPC分类号： H01L21/76816 , H01L21/0212 , H01L21/02274 , H01L21/0234 , H01L21/0271 , H01L21/0337 , H01L21/0338 , H01L21/31058 , H01L21/31138 , H01L21/3127 , H01L21/32139
摘要： A feature in a layer is provided. A photoresist layer is formed over the layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls, where the photoresist features have a first critical dimension. A fluorine-containing conformal layer is deposited over the sidewalls of the photoresist features to reduce the critical dimensions of the photoresist features. Fluorine is removed from the conformal layer, while the remaining conformal layer is left in place. Features are etched into the layer, wherein the layer features have a second critical dimension, which is less than the first critical dimension.
摘要翻译：提供了一个图层中的一个特征。在该层上形成光致抗蚀剂层。光致抗蚀剂层被图案化以形成具有光致抗蚀剂侧壁的光致抗蚀剂特征，其中光致抗蚀剂特征具有第一临界尺寸。在光致抗蚀剂特征的侧壁上沉积含氟共形层，以减少光致抗蚀剂特征的临界尺寸。氟从保形层去除，而剩余的保形层留在原位。将特征蚀刻到层中，其中层特征具有小于第一临界尺寸的第二临界尺寸。

4. 发明授权

US07309646B1 De-fluoridation process 有权
标题翻译：脱氟工艺
公开(公告)号：US07309646B1
公开(公告)日：2007-12-18
申请号：US11545903
申请日：2006-10-10
申请人： Dongho Heo , Jisoo Kim , S. M. Reza Sadjadi
发明人： Dongho Heo , Jisoo Kim , S. M. Reza Sadjadi
IPC分类号： H01L21/44 , H01L21/31
CPC分类号： H01L21/76816 , H01L21/0212 , H01L21/02274 , H01L21/0234 , H01L21/0271 , H01L21/0337 , H01L21/0338 , H01L21/31058 , H01L21/31138 , H01L21/3127 , H01L21/32139
摘要： A feature in a layer is provided. A photoresist layer is formed over the layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls, where the photoresist features have a first critical dimension. A fluorine-containing conformal layer is deposited over the sidewalls of the photoresist features to reduce the critical dimensions of the photoresist features. Fluorine is removed from the conformal layer, while the remaining conformal layer is left in place. Features are etched into the layer, wherein the layer features have a second critical dimension, which is less than the first critical dimension.
摘要翻译：提供了一个图层中的一个特征。在该层上形成光致抗蚀剂层。图案化光致抗蚀剂层以形成具有光致抗蚀剂侧壁的光致抗蚀剂特征，其中光刻胶特征具有第一临界尺寸。在光致抗蚀剂特征的侧壁上沉积含氟共形层，以减少光致抗蚀剂特征的临界尺寸。氟从保形层去除，而剩余的保形层留在原位。将特征蚀刻到层中，其中层特征具有小于第一临界尺寸的第二临界尺寸。

5. 发明授权

US07838426B2 Mask trimming 有权
标题翻译：面膜修剪
公开(公告)号：US07838426B2
公开(公告)日：2010-11-23
申请号：US11841189
申请日：2007-08-20
申请人： Supriya Goyal , Dongho Heo , Jisoo Kim , S.M. Reza Sadjadi
发明人： Supriya Goyal , Dongho Heo , Jisoo Kim , S.M. Reza Sadjadi
IPC分类号： H01L21/311
CPC分类号： H01L21/0338
摘要： A method for etching a dielectric layer is provided. A patterned mask with mask features is formed over a dielectric layer. The mask has isolated areas and dense areas of the mask features. The mask is trimmed by a plurality of cycles, where each cycle includes depositing a deposition layer, and selectively etching the deposition layer and the patterned mask. The selective etching selectively trims the isolated areas of the mask with respect to the dense areas of the mask. The dielectric layer is etched using the thus trimmed mask. The mask is removed.
摘要翻译：提供了蚀刻介电层的方法。在介电层上形成具有掩模特征的图案化掩模。面具具有隔离区域和密集区域的面具功能。掩模被多个周期修剪，其中每个周期包括沉积沉积层，并且选择性地蚀刻沉积层和图案化掩模。选择性蚀刻相对于掩模的密集区域选择性地修剪掩模的隔离区域。使用如此修整的掩模蚀刻电介质层。去除面具。

6. 发明申请

US20090050603A1 MASK TRIMMING WITH ARL ETCH 有权
标题翻译：用ARL ETCH进行掩模修剪
公开(公告)号：US20090050603A1
公开(公告)日：2009-02-26
申请号：US11841209
申请日：2007-08-20
申请人： Dongho Heo , Supriya Goyal , Jisoo Kim , S.M. Reza Sadjadi
发明人： Dongho Heo , Supriya Goyal , Jisoo Kim , S.M. Reza Sadjadi
IPC分类号： C23F1/02 , C23F1/08
CPC分类号： H01L21/0335 , H01L21/0334
摘要： A method for etching a dielectric layer disposed below an antireflection layer (ARL) is provided. The method comprises (a) forming a patterned mask with mask features over the ARL, the mask having isolated areas and dense areas of the mask features, (b) trimming and opening, and (c) etching the dielectric layer using the trimmed mask. The trimming and opening comprises a plurality of cycles, where each cycle includes (b1) a trim-etch phase which etches the ARL in a bottom of the mask features and selectively trims the isolated areas of the mask with respect to the dense areas, and (b2) a deposition-etch phase which deposits a deposition layer on the mask while further etching the ARL in the bottom of the mask features. The trimming and opening result in a net trimming of the mask in the isolated areas.
摘要翻译：提供了一种用于蚀刻设置在抗反射层（ARL）下方的电介质层的方法。该方法包括（a）在ARL上形成具有掩模特征的图案化掩模，掩模具有隔离区域和掩模特征的密集区域，（b）修剪和打开，以及（c）使用修剪的掩模蚀刻介电层。修整和打开包括多个周期，其中每个周期包括（b1）修剪蚀刻阶段，其蚀刻掩模特征的底部中的ARL并相对于密集区域选择性地修整掩模的隔离区域，以及（b2）沉积蚀刻阶段，其在掩模上沉积沉积层，同时进一步蚀刻掩模特征底部的ARL。修剪和打开导致隔离区域中的面罩的净修整。

7. 发明申请

US20090050271A1 MASK TRIMMING 有权
标题翻译：掩模修剪
公开(公告)号：US20090050271A1
公开(公告)日：2009-02-26
申请号：US11841189
申请日：2007-08-20
申请人： Supriya Goyal , Dongho Heo , Jisoo Kim , S.M. Reza Sadjadi
发明人： Supriya Goyal , Dongho Heo , Jisoo Kim , S.M. Reza Sadjadi
IPC分类号： H01L21/306
CPC分类号： H01L21/0338
摘要： A method for etching a dielectric layer is provided. A patterned mask with mask features is formed over a dielectric layer. The mask has isolated areas and dense areas of the mask features. The mask is trimmed by a plurality of cycles, where each cycle includes depositing a deposition layer, and selectively etching the deposition layer and the patterned mask. The selective etching selectively trims the isolated areas of the mask with respect to the dense areas of the mask. The dielectric layer is etched using the thus trimmed mask. The mask is removed.
摘要翻译：提供了蚀刻介电层的方法。在介电层上形成具有掩模特征的图案化掩模。面具具有隔离区域和密集区域的面具功能。掩模被多个周期修剪，其中每个周期包括沉积沉积层，以及选择性地蚀刻沉积层和图案化掩模。选择性蚀刻相对于掩模的密集区域选择性地修剪掩模的隔离区域。使用如此修整的掩模蚀刻电介质层。去除面具。

8. 发明授权

US07910489B2 Infinitely selective photoresist mask etch 有权
标题翻译：无限选择性光刻胶掩模蚀刻
公开(公告)号：US07910489B2
公开(公告)日：2011-03-22
申请号：US11357548
申请日：2006-02-17
申请人： Ji Soo Kim , Peter Cirigliano , Sangheon Lee , Dongho Heo , Daehan Choi , S. M. Reza Sadjadi
发明人： Ji Soo Kim , Peter Cirigliano , Sangheon Lee , Dongho Heo , Daehan Choi , S. M. Reza Sadjadi
IPC分类号： H01L21/302
CPC分类号： H01L21/31116 , H01L21/30655
摘要： A method for etching features into an etch layer disposed below a photoresist mask without an intermediate hardmask is provided. A plurality of etch cycles are provided. Each etch cycle comprises providing a deposition etch phase that etches features into the etch layer and deposits polymer on sidewalls of the features and over the photoresist and providing a cleaning phase that removes polymer deposited on the sidewalls.
摘要翻译：提供了一种用于将特征蚀刻到设置在光刻胶掩模下方而不具有中间硬掩模的蚀刻层中的方法。提供多个蚀刻循环。每个蚀刻循环包括提供沉积蚀刻阶段，其将特征蚀刻到蚀刻层中并将聚合物沉积在特征的侧壁上并在光致抗蚀剂上方，并提供去除沉积在侧壁上的聚合物的清洁相。

9. 发明申请

US20080083502A1 DE-FLUORIDATION PROCESS 有权
标题翻译：脱氟方法
公开(公告)号：US20080083502A1
公开(公告)日：2008-04-10
申请号：US11934023
申请日：2007-11-01
申请人： Dongho Heo , Jisoo Kim , S.M. Reza Sadjadi
发明人： Dongho Heo , Jisoo Kim , S.M. Reza Sadjadi
IPC分类号： H01L21/306
CPC分类号： H01L21/76816 , H01L21/0212 , H01L21/02274 , H01L21/0234 , H01L21/0271 , H01L21/0337 , H01L21/0338 , H01L21/31058 , H01L21/31138 , H01L21/3127 , H01L21/32139
摘要： A feature in a layer is provided. A photoresist layer is formed over the layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls, where the photoresist features have a first critical dimension. A fluorine-containing conformal layer is deposited over the sidewalls of the photoresist features to reduce the critical dimensions of the photoresist features. Fluorine is removed from the conformal layer, while the remaining conformal layer is left in place. Features are etched into the layer, wherein the layer features have a second critical dimension, which is less than the first critical dimension.
摘要翻译：提供了一个图层中的一个特征。在该层上形成光致抗蚀剂层。图案化光致抗蚀剂层以形成具有光致抗蚀剂侧壁的光致抗蚀剂特征，其中光刻胶特征具有第一临界尺寸。在光致抗蚀剂特征的侧壁上沉积含氟共形层，以减少光致抗蚀剂特征的临界尺寸。氟从保形层去除，而剩余的保形层留在原位。将特征蚀刻到层中，其中层特征具有小于第一临界尺寸的第二临界尺寸。

10. 发明申请

US20090286400A1 PLASMA PROCESS WITH PHOTORESIST MASK PRETREATMENT 有权
标题翻译：具有光刻胶掩模预处理的等离子体工艺
公开(公告)号：US20090286400A1
公开(公告)日：2009-11-19
申请号：US12120059
申请日：2008-05-13
申请人： Dongho Heo , Ji Soo Kim
发明人： Dongho Heo , Ji Soo Kim
IPC分类号： H01L21/3205
CPC分类号： H01L21/76802 , H01L21/0273 , H01L21/31138 , H01L21/31144 , H01L21/76816
摘要： A method for etching features in a dielectric layer through a photoresist (PR) mask is provided. The PR mask is patterned using laser light having a wavelength not more than 193 nm. The PR mask is pre-treated with a noble gas plasma, and then a plurality of cycles of a plasma process is provided. Each cycle includes a deposition phase that deposits a deposition layer over the PR mask, the deposition layer covering a top and sidewalls of mask features of the PR mask, and a shaping phase that shapes the deposition layer deposited over the PR mask.
摘要翻译：提供了通过光致抗蚀剂（PR）掩模蚀刻介电层中的特征的方法。使用波长不大于193nm的激光对PR掩膜进行图案化。 PR掩模用惰性气体等离子体预处理，然后提供多个等离子体处理循环。每个循环包括在PR掩模上沉积沉积层的沉积阶段，覆盖PR掩模的掩模特征的顶部和侧壁的沉积层以及对沉积在PR掩模上的沉积层进行整形的成形阶段。

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