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1. 发明授权

US08864931B2 Mask trimming 有权
标题翻译：面膜修剪
公开(公告)号：US08864931B2
公开(公告)日：2014-10-21
申请号：US12907899
申请日：2010-10-19
申请人： Supriya Goyal , Dongho Heo , Jisoo Kim , S. M. Reza Sadjadi
发明人： Supriya Goyal , Dongho Heo , Jisoo Kim , S. M. Reza Sadjadi
IPC分类号： H01L21/306 , C23F1/00 , H01L21/033
CPC分类号： H01L21/0338
摘要： A method for etching a dielectric layer is provided. A patterned mask with mask features is formed over a dielectric layer. The mask has isolated areas and dense areas of the mask features. The mask is trimmed by a plurality of cycles, where each cycle includes depositing a deposition layer, and selectively etching the deposition layer and the patterned mask. The selective etching selectively trims the isolated areas of the mask with respect to the dense areas of the mask. The dielectric layer is etched using the thus trimmed mask. The mask is removed.
摘要翻译：提供了蚀刻介电层的方法。在介电层上形成具有掩模特征的图案化掩模。面具具有隔离区域和密集区域的面具功能。掩模被多个周期修剪，其中每个周期包括沉积沉积层，以及选择性地蚀刻沉积层和图案化掩模。选择性蚀刻相对于掩模的密集区域选择性地修剪掩模的隔离区域。使用如此修整的掩模蚀刻电介质层。去除面具。

2. 发明授权

US07785484B2 Mask trimming with ARL etch 有权
标题翻译： ARL蚀刻掩模修剪
公开(公告)号：US07785484B2
公开(公告)日：2010-08-31
申请号：US11841209
申请日：2007-08-20
申请人： Dongho Heo , Supriya Goyal , Jisoo Kim , S. M. Reza Sadjadi
发明人： Dongho Heo , Supriya Goyal , Jisoo Kim , S. M. Reza Sadjadi
IPC分类号： B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00
CPC分类号： H01L21/0335 , H01L21/0334
摘要： A method for etching a dielectric layer disposed below an antireflection layer (ARL) is provided. The method comprises (a) forming a patterned mask with mask features over the ARL, the mask having isolated areas and dense areas of the mask features, (b) trimming and opening, and (c) etching the dielectric layer using the trimmed mask. The trimming and opening comprises a plurality of cycles, where each cycle includes (b1) a trim-etch phase which etches the ARL in a bottom of the mask features and selectively trims the isolated areas of the mask with respect to the dense areas, and (b2) a deposition-etch phase which deposits a deposition layer on the mask while further etching the ARL in the bottom of the mask features. The trimming and opening result in a net trimming of the mask in the isolated areas.
摘要翻译：提供了一种用于蚀刻设置在抗反射层（ARL）下方的电介质层的方法。该方法包括（a）在ARL上形成具有掩模特征的图案化掩模，掩模具有隔离区域和掩模特征的密集区域，（b）修剪和打开，以及（c）使用修剪的掩模蚀刻介电层。修整和打开包括多个周期，其中每个周期包括（b1）修剪蚀刻阶段，其蚀刻掩模特征的底部中的ARL并相对于密集区域选择性地修整掩模的隔离区域，以及（b2）沉积蚀刻阶段，其在掩模上沉积沉积层，同时进一步蚀刻掩模特征底部的ARL。修剪和打开导致隔离区域中的面罩的净修整。

3. 发明授权

US07838426B2 Mask trimming 有权
标题翻译：面膜修剪
公开(公告)号：US07838426B2
公开(公告)日：2010-11-23
申请号：US11841189
申请日：2007-08-20
申请人： Supriya Goyal , Dongho Heo , Jisoo Kim , S.M. Reza Sadjadi
发明人： Supriya Goyal , Dongho Heo , Jisoo Kim , S.M. Reza Sadjadi
IPC分类号： H01L21/311
CPC分类号： H01L21/0338
摘要： A method for etching a dielectric layer is provided. A patterned mask with mask features is formed over a dielectric layer. The mask has isolated areas and dense areas of the mask features. The mask is trimmed by a plurality of cycles, where each cycle includes depositing a deposition layer, and selectively etching the deposition layer and the patterned mask. The selective etching selectively trims the isolated areas of the mask with respect to the dense areas of the mask. The dielectric layer is etched using the thus trimmed mask. The mask is removed.
摘要翻译：提供了蚀刻介电层的方法。在介电层上形成具有掩模特征的图案化掩模。面具具有隔离区域和密集区域的面具功能。掩模被多个周期修剪，其中每个周期包括沉积沉积层，并且选择性地蚀刻沉积层和图案化掩模。选择性蚀刻相对于掩模的密集区域选择性地修剪掩模的隔离区域。使用如此修整的掩模蚀刻电介质层。去除面具。

4. 发明申请

US20090050603A1 MASK TRIMMING WITH ARL ETCH 有权
标题翻译：用ARL ETCH进行掩模修剪
公开(公告)号：US20090050603A1
公开(公告)日：2009-02-26
申请号：US11841209
申请日：2007-08-20
申请人： Dongho Heo , Supriya Goyal , Jisoo Kim , S.M. Reza Sadjadi
发明人： Dongho Heo , Supriya Goyal , Jisoo Kim , S.M. Reza Sadjadi
IPC分类号： C23F1/02 , C23F1/08
CPC分类号： H01L21/0335 , H01L21/0334
摘要： A method for etching a dielectric layer disposed below an antireflection layer (ARL) is provided. The method comprises (a) forming a patterned mask with mask features over the ARL, the mask having isolated areas and dense areas of the mask features, (b) trimming and opening, and (c) etching the dielectric layer using the trimmed mask. The trimming and opening comprises a plurality of cycles, where each cycle includes (b1) a trim-etch phase which etches the ARL in a bottom of the mask features and selectively trims the isolated areas of the mask with respect to the dense areas, and (b2) a deposition-etch phase which deposits a deposition layer on the mask while further etching the ARL in the bottom of the mask features. The trimming and opening result in a net trimming of the mask in the isolated areas.
摘要翻译：提供了一种用于蚀刻设置在抗反射层（ARL）下方的电介质层的方法。该方法包括（a）在ARL上形成具有掩模特征的图案化掩模，掩模具有隔离区域和掩模特征的密集区域，（b）修剪和打开，以及（c）使用修剪的掩模蚀刻介电层。修整和打开包括多个周期，其中每个周期包括（b1）修剪蚀刻阶段，其蚀刻掩模特征的底部中的ARL并相对于密集区域选择性地修整掩模的隔离区域，以及（b2）沉积蚀刻阶段，其在掩模上沉积沉积层，同时进一步蚀刻掩模特征底部的ARL。修剪和打开导致隔离区域中的面罩的净修整。

5. 发明申请

US20090050271A1 MASK TRIMMING 有权
标题翻译：掩模修剪
公开(公告)号：US20090050271A1
公开(公告)日：2009-02-26
申请号：US11841189
申请日：2007-08-20
申请人： Supriya Goyal , Dongho Heo , Jisoo Kim , S.M. Reza Sadjadi
发明人： Supriya Goyal , Dongho Heo , Jisoo Kim , S.M. Reza Sadjadi
IPC分类号： H01L21/306
CPC分类号： H01L21/0338
摘要： A method for etching a dielectric layer is provided. A patterned mask with mask features is formed over a dielectric layer. The mask has isolated areas and dense areas of the mask features. The mask is trimmed by a plurality of cycles, where each cycle includes depositing a deposition layer, and selectively etching the deposition layer and the patterned mask. The selective etching selectively trims the isolated areas of the mask with respect to the dense areas of the mask. The dielectric layer is etched using the thus trimmed mask. The mask is removed.
摘要翻译：提供了蚀刻介电层的方法。在介电层上形成具有掩模特征的图案化掩模。面具具有隔离区域和密集区域的面具功能。掩模被多个周期修剪，其中每个周期包括沉积沉积层，以及选择性地蚀刻沉积层和图案化掩模。选择性蚀刻相对于掩模的密集区域选择性地修剪掩模的隔离区域。使用如此修整的掩模蚀刻电介质层。去除面具。

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