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1. 发明授权

US07910489B2 Infinitely selective photoresist mask etch 有权
标题翻译：无限选择性光刻胶掩模蚀刻
公开(公告)号：US07910489B2
公开(公告)日：2011-03-22
申请号：US11357548
申请日：2006-02-17
申请人： Ji Soo Kim , Peter Cirigliano , Sangheon Lee , Dongho Heo , Daehan Choi , S. M. Reza Sadjadi
发明人： Ji Soo Kim , Peter Cirigliano , Sangheon Lee , Dongho Heo , Daehan Choi , S. M. Reza Sadjadi
IPC分类号： H01L21/302
CPC分类号： H01L21/31116 , H01L21/30655
摘要： A method for etching features into an etch layer disposed below a photoresist mask without an intermediate hardmask is provided. A plurality of etch cycles are provided. Each etch cycle comprises providing a deposition etch phase that etches features into the etch layer and deposits polymer on sidewalls of the features and over the photoresist and providing a cleaning phase that removes polymer deposited on the sidewalls.
摘要翻译：提供了一种用于将特征蚀刻到设置在光刻胶掩模下方而不具有中间硬掩模的蚀刻层中的方法。提供多个蚀刻循环。每个蚀刻循环包括提供沉积蚀刻阶段，其将特征蚀刻到蚀刻层中并将聚合物沉积在特征的侧壁上并在光致抗蚀剂上方，并提供去除沉积在侧壁上的聚合物的清洁相。

2. 发明申请

US20070193973A1 Infinitely selective photoresist mask etch 有权
标题翻译：无限选择性光刻胶掩模蚀刻
公开(公告)号：US20070193973A1
公开(公告)日：2007-08-23
申请号：US11357548
申请日：2006-02-17
申请人： Ji Kim , Peter Cirigliano , Sangheon Lee , Dongho Heo , Daehan Choi , S. Sadjadi
发明人： Ji Kim , Peter Cirigliano , Sangheon Lee , Dongho Heo , Daehan Choi , S. Sadjadi
IPC分类号： C23F1/00 , C03C15/00
CPC分类号： H01L21/31116 , H01L21/30655
摘要： A method for etching features into an etch layer disposed below a photoresist mask without an intermediate hardmask is provided. A plurality of etch cycles are provided. Each etch cycle comprises providing a deposition etch phase that etches features into the etch layer and deposits polymer on sidewalls of the features and over the photoresist and providing a cleaning phase that removes polymer deposited on the sidewalls.
摘要翻译：提供了一种用于将特征蚀刻到设置在光刻胶掩模下方而不具有中间硬掩模的蚀刻层中的方法。提供多个蚀刻循环。每个蚀刻循环包括提供沉积蚀刻阶段，其将特征蚀刻到蚀刻层中并将聚合物沉积在特征的侧壁上并在光致抗蚀剂上方，并提供去除沉积在侧壁上的聚合物的清洁相。

3. 发明授权

US07772122B2 Sidewall forming processes 有权
标题翻译：侧壁成型工艺
公开(公告)号：US07772122B2
公开(公告)日：2010-08-10
申请号：US12233517
申请日：2008-09-18
申请人： Peter Cirigliano , Helen Zhu , Ji Soo Kim , S. M. Reza Sadjadi
发明人： Peter Cirigliano , Helen Zhu , Ji Soo Kim , S. M. Reza Sadjadi
IPC分类号： H01L21/311
CPC分类号： H01L21/0337 , H01L21/31144 , H01L21/312
摘要： An etch layer underlying a patterned photoresist mask is provided. A plurality of sidewall forming processes are performed. Each sidewall forming process comprises depositing a protective layer on the patterned photoresist mask by performing multiple cyclical depositions. Each cyclical deposition involves at least a depositing phase for depositing a deposition layer over surfaces of the patterned photoresist mask and a profile shaping phase for shaping vertical surfaces in the deposition layer. Each sidewall forming process further comprises a breakthrough etch for selectively etching horizontal surfaces of the protective layer with respect to vertical surfaces of the protective layer. Afterwards, the etch layer is etched to form a feature having a critical dimension that is less than the critical dimension of the features in the patterned photoresist mask.
摘要翻译：提供了图案化光刻胶掩模下面的蚀刻层。执行多个侧壁形成工序。每个侧壁形成工艺包括通过执行多个循环沉积在图案化的光致抗蚀剂掩模上沉积保护层。每个循环沉积涉及至少沉积阶段，用于在图案化的光致抗蚀剂掩模的表面上沉积沉积层，以及用于在沉积层中形成垂直表面的轮廓成形阶段。每个侧壁形成工艺还包括用于相对于保护层的垂直表面选择性地蚀刻保护层的水平表面的穿透蚀刻。之后，刻蚀蚀刻层以形成临界尺寸小于图案化光致抗蚀剂掩模中特征的临界尺寸的特征。

4. 发明授权

US07491647B2 Etch with striation control 失效
标题翻译：蚀刻与条纹控制
公开(公告)号：US07491647B2
公开(公告)日：2009-02-17
申请号：US11223363
申请日：2005-09-09
申请人： S. M. Reza Sadjadi , Peter Cirigliano , Ji Soo Kim , Zhisong Huang , Eric A. Hudson
发明人： S. M. Reza Sadjadi , Peter Cirigliano , Ji Soo Kim , Zhisong Huang , Eric A. Hudson
IPC分类号： H01L21/311
CPC分类号： H01L21/0273 , H01L21/0274 , H01L21/31144 , H01L21/76802 , Y10S438/942 , Y10S438/949
摘要： A method for etching a feature in an etch layer is provided. A patterned photoresist mask is formed over the etch layer with photoresist features with sidewalls wherein the sidewalls of the photoresist features have striations forming peaks and valleys. The striations of the sidewalls of the photoresist features are reduced. The reducing the striations comprises at least one cycle, wherein each cycle comprises etching back peaks formed by the striations of the sidewalls of the photoresist features and depositing on the sidewalls of the photoresist features. Features are etched into the etch layer through the photoresist features. The photoresist mask is removed.
摘要翻译：提供了蚀刻蚀刻层中的特征的方法。在具有侧壁的光致抗蚀剂特征的蚀刻层上形成图案化的光致抗蚀剂掩模，其中光致抗蚀剂特征的侧壁具有形成峰和谷的条纹。光致抗蚀剂特征的侧壁的条纹减小。减小条纹包括至少一个周期，其中每个周期包括蚀刻由光致抗蚀剂特征的侧壁的条纹形成的峰，并沉积在光致抗蚀剂特征的侧壁上。通过光致抗蚀剂特征将特征蚀刻到蚀刻层中。去除光致抗蚀剂掩模。

5. 发明申请

US20090121324A1 ETCH WITH STRIATION CONTROL 审中-公开
标题翻译： ETCH与测度控制
公开(公告)号：US20090121324A1
公开(公告)日：2009-05-14
申请号：US12349142
申请日：2009-01-06
申请人： S. M. Reza Sadjadi , Peter Cirigliano , Ji Soo Kim , Zhisong Huang , Eric A. Hudson
发明人： S. M. Reza Sadjadi , Peter Cirigliano , Ji Soo Kim , Zhisong Huang , Eric A. Hudson
IPC分类号： C23F1/08 , H01L29/00
CPC分类号： H01L21/0273 , H01L21/0274 , H01L21/31144 , H01L21/76802 , Y10S438/942 , Y10S438/949
摘要： A method for etching a feature in an etch layer is provided. A patterned photoresist mask is formed over the etch layer with photoresist features with sidewalls wherein the sidewalls of the photoresist features have striations forming peaks and valleys. The striations of the sidewalls of the photoresist features are reduced. The reducing the striations comprises at least one cycle, wherein each cycle comprises etching back peaks formed by the striations of the sidewalls of the photoresist features and depositing on the sidewalls of the photoresist features. Features are etched into the etch layer through the photoresist features. The photoresist mask is removed.
摘要翻译：提供了蚀刻蚀刻层中的特征的方法。在具有侧壁的光致抗蚀剂特征的蚀刻层上形成图案化的光致抗蚀剂掩模，其中光致抗蚀剂特征的侧壁具有形成峰和谷的条纹。光致抗蚀剂特征的侧壁的条纹减小。减小条纹包括至少一个周期，其中每个周期包括蚀刻由光致抗蚀剂特征的侧壁的条纹形成的峰，并沉积在光致抗蚀剂特征的侧壁上。通过光致抗蚀剂特征将特征蚀刻到蚀刻层中。去除光致抗蚀剂掩模。

6. 发明授权

US08268118B2 Critical dimension reduction and roughness control 有权
标题翻译：关键尺寸减小和粗糙度控制
公开(公告)号：US08268118B2
公开(公告)日：2012-09-18
申请号：US12711420
申请日：2010-02-24
申请人： Sangheon Lee , Dae-Han Choi , Jisoo Kim , Peter Cirigliano , Zhisong Huang , Robert Charatan , S. M. Reza Sadjadi
发明人： Sangheon Lee , Dae-Han Choi , Jisoo Kim , Peter Cirigliano , Zhisong Huang , Robert Charatan , S. M. Reza Sadjadi
IPC分类号： H01L21/3065
CPC分类号： C23F4/00 , H01L21/31116 , H01L21/31144 , H01L21/76816 , Y10S438/947
摘要： A method for forming a feature in an etch layer is provided. A photoresist layer is formed over the etch layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls. A control layer is formed over the photoresist layer and bottoms of the photoresist features. A conformal layer is deposited over the sidewalls of the photoresist features and control layer to reduce the critical dimensions of the photoresist features. Openings in the control layer are opened with a control layer breakthrough chemistry. Features are etched into the etch layer with an etch chemistry, which is different from the control layer break through chemistry, wherein the control layer is more etch resistant to the etch with the etch chemistry than the conformal layer.
摘要翻译：提供了一种在蚀刻层中形成特征的方法。在蚀刻层上形成光致抗蚀剂层。图案化光致抗蚀剂层以形成具有光致抗蚀剂侧壁的光致抗蚀剂特征。在光致抗蚀剂层和光致抗蚀剂特征的底部上形成控制层。在光致抗蚀剂特征和控制层的侧壁上沉积保形层以减少光刻胶特征的临界尺寸。控制层的开口打开，控制层突破性化学。特征被蚀刻到蚀刻层中，其蚀刻化学性质不同于控制层突破性化学，其中控制层比蚀刻化学性质比共形层更耐蚀刻蚀刻。

7. 发明授权

US08614149B2 Critical dimension reduction and roughness control 有权
标题翻译：关键尺寸减小和粗糙度控制
公开(公告)号：US08614149B2
公开(公告)日：2013-12-24
申请号：US13586571
申请日：2012-08-15
申请人： Sangheon Lee , Dae-Han Choi , Jisoo Kim , Peter Cirigliano , Zhisong Huang , Robert Charatan , S. M. Reza Sadjadi
发明人： Sangheon Lee , Dae-Han Choi , Jisoo Kim , Peter Cirigliano , Zhisong Huang , Robert Charatan , S. M. Reza Sadjadi
IPC分类号： H01L21/311
CPC分类号： C23F4/00 , H01L21/31116 , H01L21/31144 , H01L21/76816 , Y10S438/947
摘要： A method for forming a feature in an etch layer is provided. A photoresist layer is formed over the etch layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls. A control layer is formed over the photoresist layer and bottoms of the photoresist features. A conformal layer is deposited over the sidewalls of the photoresist features and control layer to reduce the critical dimensions of the photoresist features. Openings in the control layer are opened with a control layer breakthrough chemistry. Features are etched into the etch layer with an etch chemistry, which is different from the control layer break through chemistry, wherein the control layer is more etch resistant to the etch with the etch chemistry than the conformal layer.
摘要翻译：提供了一种在蚀刻层中形成特征的方法。在蚀刻层上形成光致抗蚀剂层。图案化光致抗蚀剂层以形成具有光致抗蚀剂侧壁的光致抗蚀剂特征。在光致抗蚀剂层和光致抗蚀剂特征的底部上形成控制层。在光致抗蚀剂特征和控制层的侧壁上沉积保形层以减少光刻胶特征的临界尺寸。控制层的开口打开，控制层突破性化学。特征被蚀刻到蚀刻层中，其蚀刻化学性质不同于控制层突破化学，其中控制层比蚀刻化学性质比保形层蚀刻更耐腐蚀。

8. 发明授权

US06794293B2 Trench etch process for low-k dielectrics 有权
标题翻译：低k电介质的沟槽蚀刻工艺
公开(公告)号：US06794293B2
公开(公告)日：2004-09-21
申请号：US09972765
申请日：2001-10-05
申请人： SiYi Li , S. M. Reza Sadjadi , David R. Pirkle , Steve Lassig , Sean Kang , Vinay Pohray , Peter Cirigliano
发明人： SiYi Li , S. M. Reza Sadjadi , David R. Pirkle , Steve Lassig , Sean Kang , Vinay Pohray , Peter Cirigliano
IPC分类号： H01L21302
CPC分类号： H01L21/31116 , H01L21/02126 , H01L21/31138 , H01L21/312 , H01L21/3124 , H01L21/3127 , H01L21/31629 , H01L21/31695 , H01L21/76804 , H01L21/76808
摘要： The present inventions is a method of trench formation within a dielectric layer, comprising, first, etching a via within the dielectric layer. After the via is etched, an organic plug is used to fill a portion of the via. After the desired amount of organic plug has been etched from the via, a trench is etched with a first gas mixture to a first depth, and a second gas mixture is used to further etch the trench to the final desired trench depth. Preferably, the method is used for low-k dielectrics that do not have an intermediate etch stop layer. Additionally, it is preferable that the first gas mixture is a polymeric gas mixture and the second gas mixture is a non-polymeric gas mixture. As a result of using this method, an interconnect structure for a low-k dielectric without an intermediate etch stop layer having a trench with trench edges that are substantially orthogonal and a via with via edges that are substantially orthogonal is generated.
摘要翻译：本发明是一种在电介质层内形成沟槽的方法，包括：首先蚀刻电介质层内的通孔。在蚀刻通孔之后，使用有机插塞来填充通孔的一部分。在从通孔蚀刻所需量的有机插塞之后，用第一气体混合物蚀刻沟槽至第一深度，并且使用第二气体混合物来进一步将沟槽蚀刻到最终期望的沟槽深度。优选地，该方法用于不具有中间蚀刻停止层的低k电介质。另外，优选地，第一气体混合物是聚合气体混合物，第二气体混合物是非聚合气体混合物。作为使用该方法的结果，产生用于低k电介质的互连结构，而不具有中间蚀刻停止层，该中间蚀刻停止层具有沟槽边缘，其基本上正交，并且具有基本正交的通孔边缘的通孔。

9. 发明授权

US07682516B2 Vertical profile fixing 有权
标题翻译：垂直型材固定
公开(公告)号：US07682516B2
公开(公告)日：2010-03-23
申请号：US11244870
申请日：2005-10-05
申请人： S. M. Reza Sadjadi , Peter Cirigliano , Jisoo Kim , Zhisong Huang , Eric A. Hudson
发明人： S. M. Reza Sadjadi , Peter Cirigliano , Jisoo Kim , Zhisong Huang , Eric A. Hudson
IPC分类号： H01L21/302
CPC分类号： H01L21/0273 , H01L21/31144
摘要： A method for etching features in an etch layer is provided. A patterned photoresist mask is formed over the etch layer with photoresist features with sidewalls wherein the sidewalls of the photoresist features have irregular profiles along depths of the photoresist features. The irregular profiles along the depths of the photoresist features of the sidewalls of the photoresist features are corrected comprising at least one cycle, where each cycle comprises a sidewall deposition phase and a profile shaping phase. Feature is etched into the etch layer through the photoresist features. The mask is removed.
摘要翻译：提供了一种用于蚀刻蚀刻层中的特征的方法。在具有侧壁的光致抗蚀剂特征的蚀刻层上形成图案化的光致抗蚀剂掩模，其中光致抗蚀剂特征的侧壁沿光致抗蚀剂特征的深度具有不规则的轮廓。沿光致抗蚀剂特征的侧壁的光致抗蚀剂特征的深度的不规则轮廓被校正包括至少一个循环，其中每个循环包括侧壁沉积阶段和轮廓成形阶段。通过光致抗蚀剂特征将特征蚀刻到蚀刻层中。去除面具。

10. 发明申请

US20090311871A1 ORGANIC ARC ETCH SELECTIVE FOR IMMERSION PHOTORESIST 审中-公开
标题翻译：有机电弧选择用于浸没光电子
公开(公告)号：US20090311871A1
公开(公告)日：2009-12-17
申请号：US12139124
申请日：2008-06-13
申请人： Helen H. Zhu , Peter Cirigliano , S. M. Reza Sadjadi
发明人： Helen H. Zhu , Peter Cirigliano , S. M. Reza Sadjadi
IPC分类号： H01L21/302
CPC分类号： H01L21/31138 , H01L21/31144
摘要： A method for forming etch features in an etch layer over a substrate and below an organic ARC layer, which is below an immersion lithography photoresist mask is provided. The substrate with the etch layer, organic ARC layer, and immersion lithography photoresist mask is placed into a processing chamber. The organic ARC layer is opened. The organic ARC layer opening comprises flowing an organic ARC open gas mixture into the processing chamber, wherein the organic ARC open gas mixture comprises an etchant gas and a polymerization gas comprising CO, forming an organic ARC open plasma from the organic ARC open gas mixture, etching the organic ARC layer with the organic ARC open plasma until the organic ARC layer is opened, and stopping the flow of organic ARC open gas mixture into the processing chamber before the etch layer is completely etched.
摘要翻译：提供了一种用于在衬底上方的蚀刻层中形成蚀刻特征的方法，并且在浸没式光刻光刻胶掩模下面的有机ARC层下面形成蚀刻特征。将具有蚀刻层，有机ARC层和浸没光刻光刻胶掩模的基板放置在处理室中。有机ARC层打开。有机ARC层开口包括将有机ARC开放气体混合物流入处理室，其中有机ARC开放气体混合物包含蚀刻剂气体和包含CO的聚合气体，从有机ARC开放气体混合物形成有机ARC开放等离子体，用有机ARC打开的等离子体蚀刻有机ARC层直到有机ARC层被打开，并且在刻蚀层被完全蚀刻之前停止有机ARC开放气体混合物流入处理室。

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