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1. 发明授权

US07838426B2 Mask trimming 有权
标题翻译：面膜修剪
公开(公告)号：US07838426B2
公开(公告)日：2010-11-23
申请号：US11841189
申请日：2007-08-20
申请人： Supriya Goyal , Dongho Heo , Jisoo Kim , S.M. Reza Sadjadi
发明人： Supriya Goyal , Dongho Heo , Jisoo Kim , S.M. Reza Sadjadi
IPC分类号： H01L21/311
CPC分类号： H01L21/0338
摘要： A method for etching a dielectric layer is provided. A patterned mask with mask features is formed over a dielectric layer. The mask has isolated areas and dense areas of the mask features. The mask is trimmed by a plurality of cycles, where each cycle includes depositing a deposition layer, and selectively etching the deposition layer and the patterned mask. The selective etching selectively trims the isolated areas of the mask with respect to the dense areas of the mask. The dielectric layer is etched using the thus trimmed mask. The mask is removed.
摘要翻译：提供了蚀刻介电层的方法。在介电层上形成具有掩模特征的图案化掩模。面具具有隔离区域和密集区域的面具功能。掩模被多个周期修剪，其中每个周期包括沉积沉积层，并且选择性地蚀刻沉积层和图案化掩模。选择性蚀刻相对于掩模的密集区域选择性地修剪掩模的隔离区域。使用如此修整的掩模蚀刻电介质层。去除面具。

2. 发明申请

US20090050603A1 MASK TRIMMING WITH ARL ETCH 有权
标题翻译：用ARL ETCH进行掩模修剪
公开(公告)号：US20090050603A1
公开(公告)日：2009-02-26
申请号：US11841209
申请日：2007-08-20
申请人： Dongho Heo , Supriya Goyal , Jisoo Kim , S.M. Reza Sadjadi
发明人： Dongho Heo , Supriya Goyal , Jisoo Kim , S.M. Reza Sadjadi
IPC分类号： C23F1/02 , C23F1/08
CPC分类号： H01L21/0335 , H01L21/0334
摘要： A method for etching a dielectric layer disposed below an antireflection layer (ARL) is provided. The method comprises (a) forming a patterned mask with mask features over the ARL, the mask having isolated areas and dense areas of the mask features, (b) trimming and opening, and (c) etching the dielectric layer using the trimmed mask. The trimming and opening comprises a plurality of cycles, where each cycle includes (b1) a trim-etch phase which etches the ARL in a bottom of the mask features and selectively trims the isolated areas of the mask with respect to the dense areas, and (b2) a deposition-etch phase which deposits a deposition layer on the mask while further etching the ARL in the bottom of the mask features. The trimming and opening result in a net trimming of the mask in the isolated areas.
摘要翻译：提供了一种用于蚀刻设置在抗反射层（ARL）下方的电介质层的方法。该方法包括（a）在ARL上形成具有掩模特征的图案化掩模，掩模具有隔离区域和掩模特征的密集区域，（b）修剪和打开，以及（c）使用修剪的掩模蚀刻介电层。修整和打开包括多个周期，其中每个周期包括（b1）修剪蚀刻阶段，其蚀刻掩模特征的底部中的ARL并相对于密集区域选择性地修整掩模的隔离区域，以及（b2）沉积蚀刻阶段，其在掩模上沉积沉积层，同时进一步蚀刻掩模特征底部的ARL。修剪和打开导致隔离区域中的面罩的净修整。

3. 发明申请

US20090050271A1 MASK TRIMMING 有权
标题翻译：掩模修剪
公开(公告)号：US20090050271A1
公开(公告)日：2009-02-26
申请号：US11841189
申请日：2007-08-20
申请人： Supriya Goyal , Dongho Heo , Jisoo Kim , S.M. Reza Sadjadi
发明人： Supriya Goyal , Dongho Heo , Jisoo Kim , S.M. Reza Sadjadi
IPC分类号： H01L21/306
CPC分类号： H01L21/0338
摘要： A method for etching a dielectric layer is provided. A patterned mask with mask features is formed over a dielectric layer. The mask has isolated areas and dense areas of the mask features. The mask is trimmed by a plurality of cycles, where each cycle includes depositing a deposition layer, and selectively etching the deposition layer and the patterned mask. The selective etching selectively trims the isolated areas of the mask with respect to the dense areas of the mask. The dielectric layer is etched using the thus trimmed mask. The mask is removed.
摘要翻译：提供了蚀刻介电层的方法。在介电层上形成具有掩模特征的图案化掩模。面具具有隔离区域和密集区域的面具功能。掩模被多个周期修剪，其中每个周期包括沉积沉积层，以及选择性地蚀刻沉积层和图案化掩模。选择性蚀刻相对于掩模的密集区域选择性地修剪掩模的隔离区域。使用如此修整的掩模蚀刻电介质层。去除面具。

4. 发明申请

US20080083502A1 DE-FLUORIDATION PROCESS 有权
标题翻译：脱氟方法
公开(公告)号：US20080083502A1
公开(公告)日：2008-04-10
申请号：US11934023
申请日：2007-11-01
申请人： Dongho Heo , Jisoo Kim , S.M. Reza Sadjadi
发明人： Dongho Heo , Jisoo Kim , S.M. Reza Sadjadi
IPC分类号： H01L21/306
CPC分类号： H01L21/76816 , H01L21/0212 , H01L21/02274 , H01L21/0234 , H01L21/0271 , H01L21/0337 , H01L21/0338 , H01L21/31058 , H01L21/31138 , H01L21/3127 , H01L21/32139
摘要： A feature in a layer is provided. A photoresist layer is formed over the layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls, where the photoresist features have a first critical dimension. A fluorine-containing conformal layer is deposited over the sidewalls of the photoresist features to reduce the critical dimensions of the photoresist features. Fluorine is removed from the conformal layer, while the remaining conformal layer is left in place. Features are etched into the layer, wherein the layer features have a second critical dimension, which is less than the first critical dimension.
摘要翻译：提供了一个图层中的一个特征。在该层上形成光致抗蚀剂层。图案化光致抗蚀剂层以形成具有光致抗蚀剂侧壁的光致抗蚀剂特征，其中光刻胶特征具有第一临界尺寸。在光致抗蚀剂特征的侧壁上沉积含氟共形层，以减少光致抗蚀剂特征的临界尺寸。氟从保形层去除，而剩余的保形层留在原位。将特征蚀刻到层中，其中层特征具有小于第一临界尺寸的第二临界尺寸。

5. 发明授权

US07442649B2 Etch with photoresist mask 失效
标题翻译：刻蚀光刻胶掩模
公开(公告)号：US07442649B2
公开(公告)日：2008-10-28
申请号：US11094559
申请日：2005-03-29
申请人： Jisoo Kim , Sangheon Lee , Binet A. Worsham , Robert Charatan , S.M. Reza Sadjadi
发明人： Jisoo Kim , Sangheon Lee , Binet A. Worsham , Robert Charatan , S.M. Reza Sadjadi
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/31116
摘要： A method for etching a dielectric layer over a substrate is provided. A photoresist mask is formed over the dielectric layer. The substrate is placed in a plasma processing chamber. An etchant gas comprising NF3 is provided into the plasma chamber. A plasma is formed from the NF3 gas. The dielectric layer is etched through the photoresist mask with the plasma from the NF3 gas.
摘要翻译：提供了一种在衬底上蚀刻电介质层的方法。在电介质层上形成光致抗蚀剂掩模。将基板放置在等离子体处理室中。包含NF 3 N的蚀刻剂气体被提供到等离子体室中。从NF 3 N气体形成等离子体。通过来自NF 3 N 3气体的等离子体通过光致抗蚀剂掩模蚀刻电介质层。

6. 发明申请

US20060266478A1 Critical dimension reduction and roughness control 失效
公开(公告)号：US20060266478A1
公开(公告)日：2006-11-30
申请号：US11142509
申请日：2005-05-31
申请人： Sangheon Lee , Dae-Han Choi , Jisoo Kim , Peter Cirigliano , Zhisong Huang , Robert Charatan , S.M. Reza Sadjadi
发明人： Sangheon Lee , Dae-Han Choi , Jisoo Kim , Peter Cirigliano , Zhisong Huang , Robert Charatan , S.M. Reza Sadjadi
IPC分类号： H01L21/306 , C23F1/00
CPC分类号： C23F4/00 , H01L21/31116 , H01L21/31144 , H01L21/76816 , Y10S438/947
摘要： A method for forming a feature in an etch layer is provided. A photoresist layer is formed over the etch layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls. A control layer is formed over the photoresist layer and bottoms of the photoresist features. A conformal layer is deposited over the sidewalls of the photoresist features and control layer to reduce the critical dimensions of the photoresist features. Openings in the control layer are opened with a control layer breakthrough chemistry. Features are etched into the etch layer with an etch chemistry, which is different from the control layer break through chemistry, wherein the control layer is more etch resistant to the etch with the etch chemistry than the conformal layer.

7. 发明申请

US20120309201A1 CRITICAL DIMENSION REDUCTION AND ROUGHNESS CONTROL 有权
标题翻译：关键尺寸减少和粗糙度控制
公开(公告)号：US20120309201A1
公开(公告)日：2012-12-06
申请号：US13586571
申请日：2012-08-15
申请人： Sangheon Lee , Dae-Han Choi , Jisoo Kim , Peter Cirigliano , Zhisong Huang , Robert Charatan , S.M. Reza Sadjadi
发明人： Sangheon Lee , Dae-Han Choi , Jisoo Kim , Peter Cirigliano , Zhisong Huang , Robert Charatan , S.M. Reza Sadjadi
IPC分类号： H01L21/302
CPC分类号： C23F4/00 , H01L21/31116 , H01L21/31144 , H01L21/76816 , Y10S438/947
摘要： A method for forming a feature in an etch layer is provided. A photoresist layer is formed over the etch layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls. A control layer is formed over the photoresist layer and bottoms of the photoresist features. A conformal layer is deposited over the sidewalls of the photoresist features and control layer to reduce the critical dimensions of the photoresist features. Openings in the control layer are opened with a control layer breakthrough chemistry. Features are etched into the etch layer with an etch chemistry, which is different from the control layer break through chemistry, wherein the control layer is more etch resistant to the etch with the etch chemistry than the conformal layer.
摘要翻译：提供了一种在蚀刻层中形成特征的方法。在蚀刻层上形成光致抗蚀剂层。图案化光致抗蚀剂层以形成具有光致抗蚀剂侧壁的光致抗蚀剂特征。在光致抗蚀剂层和光致抗蚀剂特征的底部上形成控制层。在光致抗蚀剂特征和控制层的侧壁上沉积保形层以减少光刻胶特征的临界尺寸。控制层的开口打开，控制层突破性化学。特征被蚀刻到蚀刻层中，其蚀刻化学性质不同于控制层突破性化学，其中控制层比蚀刻化学性质比共形层更耐蚀刻蚀刻。

8. 发明授权

US07695632B2 Critical dimension reduction and roughness control 失效
标题翻译：关键尺寸减小和粗糙度控制
公开(公告)号：US07695632B2
公开(公告)日：2010-04-13
申请号：US11142509
申请日：2005-05-31
申请人： Sangheon Lee , Dae-Han Choi , Jisoo Kim , Peter Cirigliano , Zhisong Huang , Robert Charatan , S.M. Reza Sadjadi
发明人： Sangheon Lee , Dae-Han Choi , Jisoo Kim , Peter Cirigliano , Zhisong Huang , Robert Charatan , S.M. Reza Sadjadi
IPC分类号： H01L21/302
CPC分类号： C23F4/00 , H01L21/31116 , H01L21/31144 , H01L21/76816 , Y10S438/947
摘要： A method for forming a feature in an etch layer is provided. A photoresist layer is formed over the etch layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls. A control layer is formed over the photoresist layer and bottoms of the photoresist features. A conformal layer is deposited over the sidewalls of the photoresist features and control layer to reduce the critical dimensions of the photoresist features. Openings in the control layer are opened with a control layer breakthrough chemistry. Features are etched into the etch layer with an etch chemistry, which is different from the control layer break through chemistry, wherein the control layer is more etch resistant to the etch with the etch chemistry than the conformal layer.
摘要翻译：提供了一种在蚀刻层中形成特征的方法。在蚀刻层上形成光致抗蚀剂层。图案化光致抗蚀剂层以形成具有光致抗蚀剂侧壁的光致抗蚀剂特征。在光致抗蚀剂层和光致抗蚀剂特征的底部上形成控制层。在光致抗蚀剂特征和控制层的侧壁上沉积保形层以减少光刻胶特征的临界尺寸。控制层的开口打开，控制层突破性化学。特征被蚀刻到蚀刻层中，其蚀刻化学性质不同于控制层突破性化学，其中控制层比蚀刻化学性质比共形层更耐蚀刻蚀刻。

9. 发明申请

US20120052683A1 PITCH REDUCTION USING OXIDE SPACER 有权
标题翻译：使用氧化物间距减少PITCH
公开(公告)号：US20120052683A1
公开(公告)日：2012-03-01
申请号：US12742073
申请日：2008-11-07
申请人： Jisoo Kim , Conan Chiang , Jun Shinagawa , S.M. Reza Sadjadi
发明人： Jisoo Kim , Conan Chiang , Jun Shinagawa , S.M. Reza Sadjadi
IPC分类号： H01L21/302 , B23K10/00
CPC分类号： H01L21/31144 , H01L21/02126 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/02337 , H01L21/0234 , H01L21/0337 , H01L21/0338 , H01L21/31612 , H01L21/31654 , H01L21/32139
摘要： A method for etching an etch layer disposed over a substrate and below an antireflective coating (ARC) layer and a patterned organic mask with mask features is provided. The substrate is placed in a process chamber. The ARC layer is opened. An oxide spacer deposition layer is formed. The oxide spacer deposition layer on the organic mask is partially removed, where at least the top portion of the oxide spacer deposition layer is removed. The organic mask and the ARC layer are removed by etching. The etch layer is etched through the sidewalls of the oxide spacer deposition layer. The substrate is removed from the process chamber.
摘要翻译：提供了一种用于蚀刻设置在基板上方并且在抗反射涂层（ARC）层下方的蚀刻层和具有掩模特征的图案化有机掩模的方法。将基板放置在处理室中。 ARC层打开。形成氧化物间隔物沉积层。部分去除有机掩模上的氧化物间隔物沉积层，其中氧化物间隔物沉积层的至少顶部被去除。通过蚀刻去除有机掩模和ARC层。通过氧化物隔离层沉积层的侧壁蚀刻蚀刻层。将衬底从处理室中取出。

10. 发明申请

US20070284690A1 ETCH FEATURES WITH REDUCED LINE EDGE ROUGHNESS 审中-公开
标题翻译：具有减少线边缘粗糙度的特征
公开(公告)号：US20070284690A1
公开(公告)日：2007-12-13
申请号：US11843131
申请日：2007-08-22
申请人： S.M. Reza Sadjadi , Eric Hudson
发明人： S.M. Reza Sadjadi , Eric Hudson
IPC分类号： H01L29/00
CPC分类号： G03F7/40 , G03F7/405 , H01L21/0273 , H01L21/0337 , H01L21/31144
摘要： A method for forming a feature in a layer with reduced line edge roughening is provided. A photoresist layer is formed over the layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls. A sidewall layer with a thickness less than 100 nm is formed over the sidewalls of the photoresist features by performing for a plurality of cycles. Each cycle comprises depositing a layer on the photoresist layer wherein the deposited layer has a thickness between a monolayer to 20 nm. Features are etched into the layer through the photoresist features. The photoresist layer and sidewall layer are stripped.
摘要翻译：提供了一种在具有减少的线边缘粗糙度的层中形成特征的方法。在该层上形成光致抗蚀剂层。图案化光致抗蚀剂层以形成具有光致抗蚀剂侧壁的光致抗蚀剂特征。通过执行多个循环，在光致抗蚀剂特征的侧壁上形成厚度小于100nm的侧壁层。每个循环包括在光致抗蚀剂层上沉积一层，其中沉积层具有单层至20nm之间的厚度。通过光致抗蚀剂特征将特征蚀刻到该层中。剥离光致抗蚀剂层和侧壁层。

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