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1. 发明授权

US09147492B2 Control method of nonvolatile memory device 有权
标题翻译：非易失性存储器件的控制方法
公开(公告)号：US09147492B2
公开(公告)日：2015-09-29
申请号：US14546477
申请日：2014-11-18
申请人： Sunil Shim , Jin-Man Han , Sang-Wan Nam , Won-Taeck Jung
发明人： Sunil Shim , Jin-Man Han , Sang-Wan Nam , Won-Taeck Jung
IPC分类号： G11C16/00 , G11C16/34 , G11C16/10 , G11C16/16 , H01L27/115 , H01L29/792 , G11C16/14
CPC分类号： G11C16/3418 , G11C16/10 , G11C16/14 , G11C16/16 , G11C16/349 , H01L27/11578 , H01L27/11582 , H01L29/7926
摘要： According to example embodiments, a control method of a nonvolatile memory device, which includes a plurality of memory blocks on a substrate, each memory block including a plurality of sub blocks stacked in a direction perpendicular to the substrate and being configured to be erased independently and each sub block including a plurality of memory cells stacked in the direction perpendicular to the substrate. The control method includes comparing a count value of a first memory block with a reference value, the count value determined according to the number of program, read, or erase operations executed at the first memory block after data is programmed in the first memory block; and if the count value is greater than or equal to the reference value, performing a reprogram operation in which data programmed in first the memory block is read and the read data is programmed in a second memory block.
摘要翻译：根据示例性实施例，一种非易失性存储器件的控制方法，其包括在衬底上的多个存储块，每个存储块包括沿垂直于衬底的方向堆叠的多个子块，并且被配置为独立擦除，每个子块包括在垂直于衬底的方向上堆叠的多个存储单元。控制方法包括将第一存储块的计数值与参考值进行比较，所述计数值根据在第一存储器块中的数据被编程之后在第一存储器块执行的程序，读取或擦除操作的数量确定; 并且如果所述计数值大于或等于所述参考值，则执行重新编程操作，其中在第一存储器块中编程的数据被读取并且所读取的数据被编程在第二存储器块中。

2. 发明授权

US08908431B2 Control method of nonvolatile memory device 有权
标题翻译：非易失性存储器件的控制方法
公开(公告)号：US08908431B2
公开(公告)日：2014-12-09
申请号：US13607038
申请日：2012-09-07
申请人： Sunil Shim , Jinman Han , Sang-Wan Nam , Won-Taeck Jung
发明人： Sunil Shim , Jinman Han , Sang-Wan Nam , Won-Taeck Jung
IPC分类号： G11C16/10 , H01L27/115 , H01L29/792 , G11C16/34 , G11C16/16
CPC分类号： G11C16/3418 , G11C16/10 , G11C16/14 , G11C16/16 , G11C16/349 , H01L27/11578 , H01L27/11582 , H01L29/7926
摘要： According to example embodiments, a control method of a nonvolatile memory device, which includes a plurality of memory blocks on a substrate, each memory block including a plurality of sub blocks stacked in a direction perpendicular to the substrate and being configured to be erased independently and each sub block including a plurality of memory cells stacked in the direction perpendicular to the substrate. The control method includes comparing a count value of a first memory block with a reference value, the count value determined according to the number of program, read, or erase operations executed at the first memory block after data is programmed in the first memory block; and if the count value is greater than or equal to the reference value, performing a reprogram operation in which data programmed in first the memory block is read and the read data is programmed in a second memory block.
摘要翻译：根据示例性实施例，一种非易失性存储器件的控制方法，其包括在衬底上的多个存储块，每个存储块包括沿垂直于衬底的方向堆叠的多个子块，并且被配置为独立擦除，每个子块包括在垂直于衬底的方向上堆叠的多个存储单元。控制方法包括将第一存储块的计数值与参考值进行比较，所述计数值根据在第一存储器块中的数据被编程之后在第一存储器块执行的程序，读取或擦除操作的数量确定; 并且如果所述计数值大于或等于所述参考值，则执行重新编程操作，其中在第一存储器块中编程的数据被读取并且所读取的数据被编程在第二存储器块中。

3. 发明授权

US09190151B2 Three-dimensional nonvolatile memory and related read method designed to reduce read disturbance 有权
标题翻译：三维非易失性存储器和相关读取方法旨在减少读取干扰
公开(公告)号：US09190151B2
公开(公告)日：2015-11-17
申请号：US14153164
申请日：2014-01-13
申请人： Sang-Wan Nam , Won-Taeck Jung
发明人： Sang-Wan Nam , Won-Taeck Jung
IPC分类号： G11C11/34 , G11C16/04 , G11C16/34
CPC分类号： G11C16/0483 , G11C16/08 , G11C16/10 , G11C16/24 , G11C16/26 , G11C16/3427
摘要： A nonvolatile memory device performs a read operation comprising first and second intervals. In the first interval the device applies a turn-on voltage to string selection lines and ground selection lines connected to the string selection transistors and the ground selection transistors, respectively. In the second interval, the device applies a turn-off voltage to unselected string selection lines and unselected ground selection lines while continuing to apply the turn-on voltage to a selected string selection line and a selected ground selection line. In both the first and second intervals, the device applies a first read voltage to a selected wordline connected to memory cells to be read by the read operation and applying a second read voltage to unselected wordlines among connected to memory cells not to be read by the read operation.
摘要翻译：非易失性存储器件执行包括第一和第二间隔的读取操作。在第一间隔期间，器件分别对串联选择线和连接到串选择晶体管和接地选择晶体管的选择线施加导通电压。在第二间隔期间，器件对未选择的串选择线和未选择的接地选择线施加关断电压，同时继续对所选择的串选择线和选择的接地选择线施加导通电压。在第一和第二间隔中，设备将第一读取电压施加到连接到要由读取操作读取的存储器单元的选定字线，并将第二读取电压施加到连接到不被读取的存储器单元读取的未选字线读操作。

4. 发明授权

US09812206B2 3D flash memory device having different dummy word lines and data storage devices including same 有权
公开(公告)号：US09812206B2
公开(公告)日：2017-11-07
申请号：US14162905
申请日：2014-01-24
申请人： Sang-Wan Nam , Kitae Park
发明人： Sang-Wan Nam , Kitae Park
IPC分类号： G11C11/34 , G11C16/04 , G11C16/16 , G11C16/34 , G11C16/08 , G11C16/10
CPC分类号： G11C16/0483 , G11C16/08 , G11C16/10 , G11C16/16 , G11C16/3427
摘要： A three-dimensional (3D) flash memory includes a first dummy word line disposed between a ground select line and a lowermost main word line, and a second dummy word line of different word line configuration disposed between a string select line and an upper most main word line.

5. 发明授权

US09659662B2 Nonvolatile memory device and method of erasing nonvolatile memory device 有权
公开(公告)号：US09659662B2
公开(公告)日：2017-05-23
申请号：US14501352
申请日：2014-09-30
申请人： Sang-Wan Nam , Kang-Bin Lee , Kihwan Choi
发明人： Sang-Wan Nam , Kang-Bin Lee , Kihwan Choi
IPC分类号： G11C16/16 , G11C16/04
CPC分类号： G11C16/16 , G11C11/16 , G11C16/0483
摘要： A method is provided for erasing a nonvolatile memory device, including multiple memory blocks formed in a direction perpendicular to a substrate, each memory block having multiple strings connected to a bit line. The method includes selecting a memory block to be erased using a power supply voltage; unselecting a remaining memory block, other than the selected memory block, using a negative voltage; setting a bias condition to reduce leakage currents of the unselected memory block; and performing an erase operation on the selected memory block.

6. 发明授权

US09620232B2 Nonvolatile memory device and method of operating the same 有权
公开(公告)号：US09620232B2
公开(公告)日：2017-04-11
申请号：US15130237
申请日：2016-04-15
申请人： Sang-Wan Nam
发明人： Sang-Wan Nam
IPC分类号： G11C16/10 , G11C16/26 , G11C16/04 , G11C16/08 , G11C16/34 , H01L27/11582
CPC分类号： G11C16/26 , G11C16/0483 , G11C16/08 , G11C16/34 , G11C16/3418 , G11C16/3427 , G11C16/3459 , H01L27/11582
摘要： According to example embodiments, an operation method of a nonvolatile memory device includes determining a location of a selected word line among word lines connected to the nonvolatile memory device, selecting one of a plurality of different read disturbance reducing modes according to the location of the selected word line, and performing a read or verification operation according to the selected read disturbance reducing modes. The nonvolatile memory device includes cell strings. Each one of the cell strings includes memory cells stacked on top of each other in a direction perpendicular to the substrate and between a ground select transistor and a string select transistor. The ground select transistor is between the substrate and the number of the memory cells. The string select transistor is connected to a bit line and is between the bit line and the number of the memory cells.

7. 发明授权

US09552886B2 Memory system and method of driving memory system using zone voltages 有权
标题翻译：使用区域电压驱动存储器系统的存储器系统和方法
公开(公告)号：US09552886B2
公开(公告)日：2017-01-24
申请号：US14855433
申请日：2015-09-16
申请人： Sang-Wan Nam , Minsu Kim , Kang-Bin Lee , Kitae Park
发明人： Sang-Wan Nam , Minsu Kim , Kang-Bin Lee , Kitae Park
IPC分类号： G11C16/10 , G11C16/26 , G11C16/30 , G11C5/14 , G11C16/24 , G11C16/08 , G11C16/04 , G11C16/16 , G11C16/34 , G11C16/14
CPC分类号： G11C16/24 , G11C5/147 , G11C16/0483 , G11C16/08 , G11C16/10 , G11C16/14 , G11C16/16 , G11C16/26 , G11C16/3418 , G11C16/3459
摘要： A method is provided for driving a nonvolatile memory device, including multiple strings, where each string is formed by penetrating plate-shaped word lines stacked on a substrate. The method includes configuring the word lines of a string in multiple zones based on zone configuration information, and applying zone voltages to the zones, respectively. The zone configuration information is varied according to a mode of operation.
摘要翻译：提供一种用于驱动包括多个串的非易失性存储器件的方法，其中通过穿过堆叠在衬底上的板状字线形成每个串。该方法包括基于区域配置信息配置多个区域中的字符串的字线，并且将区域电压分别应用于区域。区域配置信息根据操作模式而变化。

8. 发明授权

US09424932B2 Nonvolatile memory device and programming method thereof 有权
标题翻译：非易失性存储器件及其编程方法
公开(公告)号：US09424932B2
公开(公告)日：2016-08-23
申请号：US14567639
申请日：2014-12-11
申请人： Yoon-Hee Choi , Sang-Wan Nam , Kang-Bin Lee
发明人： Yoon-Hee Choi , Sang-Wan Nam , Kang-Bin Lee
IPC分类号： G11C11/34 , G11C16/10 , G11C16/04 , G11C16/34 , G11C7/04 , H01L27/115
CPC分类号： G11C16/10 , G11C7/04 , G11C16/0483 , G11C16/3459 , H01L27/1157 , H01L27/11575 , H01L27/11582
摘要： A programming method is for programming a nonvolatile memory device including a plurality of strings disposed perpendicular to a substrate and connected between bitlines and a common source line. The programming method includes setting up the common source line to a predetermined voltage, floating the setup common source line, performing a program operation on memory cells connected to a selected wordline, and performing a verify operation on the memory cells.
摘要翻译：编程方法是用于编程非易失性存储器件，其包括垂直于衬底布置并连接在位线和公共源极线之间的多个串。编程方法包括将公共源线设置为预定电压，浮置设置公共源线，对连接到所选字线的存储器单元执行编程操作，以及对存储器单元执行验证操作。

9. 发明授权

US09391088B2 Nonvolatile memory device 有权
标题翻译：非易失性存储器件
公开(公告)号：US09391088B2
公开(公告)日：2016-07-12
申请号：US14674188
申请日：2015-03-31
申请人： Sang-Wan Nam
发明人： Sang-Wan Nam
IPC分类号： H01L27/115 , H01L29/82 , G11C16/04 , G11C11/34
CPC分类号： H01L27/1157 , G11C16/14 , G11C16/3427 , H01L27/11575 , H01L27/11582
摘要： The nonvolatile memory device includes a plurality of memory cells being stacked in a direction perpendicular to a substrate. A string select transistor is connected between the memory cells and a bit line. A string select line is connected to the string select transistor. A one directional device is connected between the substrate and the string select line and configured to transmit a bias voltage from the substrate toward the string select line in an erase operation.
摘要翻译：非易失性存储器件包括沿垂直于衬底的方向堆叠的多个存储器单元。一个串选择晶体管被连接在存储单元和位线之间。串选择线连接到串选择晶体管。单向器件连接在衬底和串选择线之间，并被配置为在擦除操作中从衬底向串选择线发送偏置电压。

10. 发明申请

US20160042792A1 NONVOLATILE MEMORY DEVICES AND DRIVING METHODS THEREOF 审中-公开
公开(公告)号：US20160042792A1
公开(公告)日：2016-02-11
申请号：US14887595
申请日：2015-10-20
申请人： Kyung-Hwa Kang , Sang-Wan Nam , Donghyuk Chae , ChiWeon Yoon
发明人： Kyung-Hwa Kang , Sang-Wan Nam , Donghyuk Chae , ChiWeon Yoon
IPC分类号： G11C16/04 , G11C16/08
CPC分类号： G11C16/0483 , G11C16/0466 , G11C16/08 , G11C16/24 , H01L23/528 , H01L27/11565 , H01L27/1157 , H01L27/11582
摘要： Nonvolatile memory devices including memory cell arrays with a plurality of cell strings connected between a substrate and a plurality of bit lines and selected by selection lines, and a gating circuit configured to drive the selection lines in at least two directions.

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