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1. 发明申请

US20160179074A1 SYSTEM-ON-CHIP INCLUDING ON-CHIP CLOCK CONTROLLER AND MOBILE DEVICE HAVING THE SAME 有权
标题翻译：片上系统芯片，包括片上时钟控制器和具有相同功能的移动设备
公开(公告)号：US20160179074A1
公开(公告)日：2016-06-23
申请号：US14968894
申请日：2015-12-15
申请人： MINSU KIM
发明人： MINSU KIM
IPC分类号： G05B19/045 , G01R31/3185 , H03K3/356
CPC分类号： G05B19/045 , G01R31/318541 , G01R31/318552 , H03K3/012 , H03K3/356 , H03K3/356008 , H03K3/356104
摘要： A system-on-chip (SoC) includes a logic circuit having a scan flip-flop and a an on-chip clock controller. The scan flip-flop is configured to store data using a passive keeper. The on-chip clock controller is configured to receive a reference clock for driving the logic circuit, to generate an internal clock based on a high-state interval of the reference clock, and to provide the internal clock to the scan flip-flop.
摘要翻译：片上系统（SoC）包括具有扫描触发器和片上时钟控制器的逻辑电路。扫描触发器被配置为使用被动保持器来存储数据。片上时钟控制器被配置为接收用于驱动逻辑电路的参考时钟，以基于参考时钟的高状态间隔产生内部时钟，并向扫描触发器提供内部时钟。

2. 发明申请

US20140347927A1 NONVOLATILE MEMORY DEVICE HAVING SPLIT GROUND SELECTION LINE STRUCTURES 有权
标题翻译：具有分离地线选择线结构的非易失性存储器件
公开(公告)号：US20140347927A1
公开(公告)日：2014-11-27
申请号：US14244930
申请日：2014-04-04
申请人： MINSU KIM , YANG-LO AHN , DAE HAN KIM , KITAE PARK
发明人： MINSU KIM , YANG-LO AHN , DAE HAN KIM , KITAE PARK
IPC分类号： G11C16/08
CPC分类号： G11C16/08 , G11C16/0483 , G11C16/3427
摘要： A nonvolatile memory device comprises a plurality of vertical NAND flash memory cells arranged in a three dimensional (3D) structure, a first memory block disposed in the 3D structure and having memory cells selected by a first ground selection line and a second ground selection line, wherein the first and second ground selection lines are electrically separated from each other, a second memory block disposed in the 3D structure and having memory cells selected by a third selection line and fourth selection line, wherein the third and fourth ground selection lines are electrically separated from each other, and a pass transistor that transfers a driving signal to turn on ground selection transistors respectively connected to the first and third ground selection lines in response to a block selection signal.
摘要翻译：非易失性存储器件包括以三维（3D）结构排列的多个垂直NAND闪存单元，设置在3D结构中的第一存储器块，并具有由第一接地选择线和第二接地选择线选择的存储单元，其中所述第一和第二接地选择线彼此电分离，设置在所述3D结构中并具有由第三选择线和第四选择线选择的存储单元的第二存储器块，其中所述第三和第四接地选择线被电分离以及传递驱动信号以通过响应于块选择信号接通分别连接到第一和第三接地选择线的接地选择晶体管的传输晶体管。

3. 发明授权

US08432188B2 Latch circuit, flip-flop having the same and data latching method 有权
标题翻译：锁存电路，触发器具有相同的数据锁存方式
公开(公告)号：US08432188B2
公开(公告)日：2013-04-30
申请号：US13291435
申请日：2011-11-08
申请人： Gunok Jung , Minsu Kim
发明人： Gunok Jung , Minsu Kim
IPC分类号： H03K19/00
CPC分类号： H03K3/356156
摘要： A latch circuit includes a first tri-state inverter configured to invert an input voltage in response to a pulse and to output the inverted voltage to a first node, a second tri-state inverter connected between the first node and a second node and to invert a voltage of the second node in response to an inverted pulse being an inverted version of the pulse, and a variable inversion unit connected between the first node and the second node. The variable inversion unit adjusts a logical threshold value according to a logical value corresponding to a voltage of the first node and inverts a voltage of the first node based upon the adjusted logical threshold value, the logical threshold value indicating a voltage for discriminating the logical value.
摘要翻译：锁存电路包括：第一三态反相器，被配置为响应于脉冲反转输入电压，并将反相电压输出到第一节点;第二三态反相器，连接在第一节点和第二节点之间并反转所述第二节点响应于所述脉冲的反转形式的电压，以及连接在所述第一节点和所述第二节点之间的可变反转单元。可变反转单元根据与第一节点的电压对应的逻辑值来调整逻辑阈值，并根据调整后的逻辑阈值反转第一节点的电压，逻辑阈值表示用于区分逻辑值的电压。

4. 发明授权

US10223011B2 Storage device including nonvolatile memory device and controller and operating method of the storage device 有权
公开(公告)号：US10223011B2
公开(公告)日：2019-03-05
申请号：US15438644
申请日：2017-02-21
申请人： Hyejin Yim , Jinyub Lee , Kyung-Hwa Kang , Minseok Kim , Minsu Kim , Sung-Won Yun
发明人： Hyejin Yim , Jinyub Lee , Kyung-Hwa Kang , Minseok Kim , Minsu Kim , Sung-Won Yun
IPC分类号： G06F11/10 , G06F3/06 , G11C29/52 , G11C11/56 , G11C16/26 , G11C16/04
摘要： A storage device includes a nonvolatile memory device and a controller configured to generate a read command according to a request of an external host device and transmit the read command to the nonvolatile memory device. The nonvolatile memory device is configured to perform a read operation in response to the read command, to output read data to the controller, and to store information of the read operation in an internal register.

5. 发明授权

US08466617B2 Organic electroluminescence display apparatus 有权
标题翻译：有机电致发光显示装置
公开(公告)号：US08466617B2
公开(公告)日：2013-06-18
申请号：US13330956
申请日：2011-12-20
申请人： Daihan Cho , Minsu Kim , Heechul Lee
发明人： Daihan Cho , Minsu Kim , Heechul Lee
IPC分类号： H05B33/00
CPC分类号： H01L27/323 , H01L51/5253 , H01L51/5281
摘要： An organic electroluminescence display apparatus includes an organic light emitting layer disposed on a substrate, a thin film sealing layer on the organic light emitting layer, the thin film sealing layer being configured to seal the organic light emitting layer, a polarizer disposed on the thin film sealing layer, a touch screen panel disposed on the polarizer, and a window layer disposed on the touch screen panel.
摘要翻译：一种有机电致发光显示装置，包括：设置在基板上的有机发光层，在有机发光层上的薄膜密封层，所述薄膜密封层被构造成密封有机发光层，设置在薄膜上的偏振片密封层，设置在偏振器上的触摸屏面板和设置在触摸屏面板上的窗口层。

6. 发明申请

US20130116910A1 SYSTEM AND METHOD FOR JUDGING ABNORMAL CONDITION OF A COMBUSTION PRESSURE SENSOR 审中-公开
标题翻译：用于判断燃烧压力传感器异常状态的系统和方法
公开(公告)号：US20130116910A1
公开(公告)日：2013-05-09
申请号：US13555975
申请日：2012-07-23
申请人： Kihoon Nam , Minsu Kim , Kyoungchan Han
发明人： Kihoon Nam , Minsu Kim , Kyoungchan Han
IPC分类号： G06F19/00
CPC分类号： F02D41/18 , F02D35/023 , F02D41/123 , F02D41/222 , F02P19/028 , Y02T10/40
摘要： A system and method for judging an abnormal condition of a combustion pressure sensor, may include determining whether a driving condition of a vehicle, a fuel injection condition, and an intake air condition may be satisfied, deriving a relational equation from an amount of air measured in real time and a combustion pressure measured by the combustion pressure sensor, and monitoring a slope and a y-intercept of the relational equation when the driving condition, the fuel injection condition, and the intake air condition may be satisfied, determining whether the slope and the y-intercept may be in a predetermined normal range, accumulating the number of times the slope and the y-intercept may be beyond the predetermined normal range, and outputting a warning when the accumulated number reaches a number which may be predetermined as an abnormal condition number of the sensor.
摘要翻译：用于判断燃烧压力传感器的异常状况的系统和方法可以包括确定是否可以满足车辆的驾驶状况，燃料喷射状态和进气条件，从所测量的空气量导出关系式燃烧压力传感器测量的燃烧压力，以及当驾驶条件，燃料喷射条件和进气条件可以被满足时监测关系式的斜率和y截距，确定斜率并且y截距可以在预定的正常范围内，累积斜率和y截距可能超过预定正常范围的次数，并且当累积数达到可以被预先确定的数量时输出警告传感器状态异常。

7. 发明申请

US20170300252A1 STORAGE DEVICE INCLUDING NONVOLATILE MEMORY DEVICE AND CONTROLLER AND OPERATING METHOD OF THE STORAGE DEVICE 审中-公开
公开(公告)号：US20170300252A1
公开(公告)日：2017-10-19
申请号：US15438644
申请日：2017-02-21
申请人： HYEJIN YIM , JINYUB LEE , KYUNG-HWA KANG , MINSEOK KIM , MINSU KIM , SUNG-WON YUN
发明人： HYEJIN YIM , JINYUB LEE , KYUNG-HWA KANG , MINSEOK KIM , MINSU KIM , SUNG-WON YUN
IPC分类号： G06F3/06 , G06F11/10 , G11C29/52
CPC分类号： G06F3/0619 , G06F3/0653 , G06F3/0659 , G06F3/0679 , G06F3/0688 , G06F11/1048 , G06F11/1068 , G11C11/5642 , G11C16/0483 , G11C16/26 , G11C29/52
摘要： A storage device includes a nonvolatile memory device and a controller configured to generate a read command according to a request of an external host device and transmit the read command to the nonvolatile memory device. The nonvolatile memory device is configured to perform a read operation in response to the read command, to output read data to the controller, and to store information of the read operation in an internal register.

8. 发明授权

US09196364B2 Nonvolatile memory device having split ground selection line structures 有权
标题翻译：具有分割地选择线结构的非易失性存储器件
公开(公告)号：US09196364B2
公开(公告)日：2015-11-24
申请号：US14244930
申请日：2014-04-04
申请人： Minsu Kim , Yang-Lo Ahn , Dae Han Kim , Kitae Park
发明人： Minsu Kim , Yang-Lo Ahn , Dae Han Kim , Kitae Park
IPC分类号： G11C16/04 , G11C16/08 , G11C16/34
CPC分类号： G11C16/08 , G11C16/0483 , G11C16/3427
摘要： A nonvolatile memory device includes a plurality of vertical NAND flash memory cells arranged in a three dimensional (3D) structure, a first memory block disposed in the 3D structure and having memory cells selected by a first ground selection line and a second ground selection line, wherein the first and second ground selection lines are electrically separated from each other, a second memory block disposed in the 3D structure and having memory cells selected by a third selection line and fourth selection line, wherein the third and fourth ground selection lines are electrically separated from each other, and a pass transistor that transfers a driving signal to turn on ground selection transistors respectively connected to the first and third ground selection lines in response to a block selection signal.
摘要翻译：非易失性存储器件包括以三维（3D）结构排列的多个垂直NAND闪存单元，设置在3D结构中并具有由第一地选择线和第二地选择线选择的存储单元的第一存储块，其中所述第一和第二接地选择线彼此电分离，设置在所述3D结构中并具有由第三选择线和第四选择线选择的存储单元的第二存储器块，其中所述第三和第四接地选择线被电分离以及传递驱动信号以通过响应于块选择信号接通分别连接到第一和第三接地选择线的接地选择晶体管的传输晶体管。

9. 发明申请

US20140226403A1 MEMORY SYSTEM AND METHOD OF DRIVING MEMORY SYSTEM USING ZONE VOLTAGES 有权
标题翻译：使用区域电压驱动存储器系统的存储器系统和方法
公开(公告)号：US20140226403A1
公开(公告)日：2014-08-14
申请号：US14056268
申请日：2013-10-17
申请人： SANG-WAN NAM , MINSU KIM , KANG-BIN LEE , KITAE PARK
发明人： SANG-WAN NAM , MINSU KIM , KANG-BIN LEE , KITAE PARK
IPC分类号： G11C16/08
CPC分类号： G11C16/24 , G11C5/147 , G11C16/0483 , G11C16/08 , G11C16/10 , G11C16/14 , G11C16/16 , G11C16/26 , G11C16/3418 , G11C16/3459
摘要： A method is provided for driving a nonvolatile memory device, including multiple strings, where each string is formed by penetrating plate-shaped word lines stacked on a substrate. The method includes configuring the word lines of a string in multiple zones based on zone configuration information, and applying zone voltages to the zones, respectively. The zone configuration information is varied according to a mode of operation.
摘要翻译：提供一种用于驱动包括多个串的非易失性存储器件的方法，其中通过穿过堆叠在衬底上的板状字线形成每个串。该方法包括基于区域配置信息配置多个区域中的字符串的字线，并且将区域电压分别应用于区域。区域配置信息根据操作模式而变化。

10. 发明授权

US08426861B2 Organic light emitting display device 有权
标题翻译：有机发光显示装置
公开(公告)号：US08426861B2
公开(公告)日：2013-04-23
申请号：US13152738
申请日：2011-06-03
申请人： Hongseok Choi , ChangWook Han , SungJoon Bae , HeeSuk Pang , MinSu Kim , HwaKyung Kim
发明人： Hongseok Choi , ChangWook Han , SungJoon Bae , HeeSuk Pang , MinSu Kim , HwaKyung Kim
IPC分类号： H01L51/54
CPC分类号： H01L27/3258 , H01L27/3213
摘要： The present invention further relates to an OLED device, including R, G, B, and W subpixels. Specifically, the OLED device comprises a substrate; a thin film transistor (TFT) active layer disposed on the substrate, comprising a gate electrode, a gate insulating layer, an active layer, an interlayer insulating layer, a source electrode, and a drain electrode; an overcoat layer disposed over the thin film transistor; and a passivation layer disposed between the thin film transistor and the overcoat layer, wherein the passivation layer is absent in a path of a light or wherein the passivation layer is disposed in the path of the light as a single layer comprising silicon nitride.
摘要翻译：本发明还涉及一种包括R，G，B和W子像素的OLED器件。具体地，OLED器件包括衬底; 设置在所述基板上的薄膜晶体管（TFT）有源层，包括栅电极，栅绝缘层，有源层，层间绝缘层，源电极和漏电极; 设置在所述薄膜晶体管上的外涂层; 以及设置在薄膜晶体管和外涂层之间的钝化层，其中钝化层在光路中不存在，或者其中钝化层设置在作为包含氮化硅的单层的光的路径中。

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