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1. 发明授权

US10490285B2 Storage device including nonvolatile memory device and read method thereof 有权
公开(公告)号：US10490285B2
公开(公告)日：2019-11-26
申请号：US14692494
申请日：2015-04-21
申请人： Sangyong Yoon , Donghun Kwak , Kitae Park , Myung-Hoon Choi , Seung-Cheol Han
发明人： Sangyong Yoon , Donghun Kwak , Kitae Park , Myung-Hoon Choi , Seung-Cheol Han
IPC分类号： G11C11/56 , G11C16/26 , G11C16/04 , G06F11/10 , G11C29/52 , G11C13/00
CPC分类号： G11C16/26 , G06F11/1068 , G06F11/1072 , G11C11/5642 , G11C16/0466 , G11C16/0483 , G11C29/52 , G11C2013/0057
摘要： A read method of a nonvolatile memory device includes reading data from a selected memory area of the nonvolatile memory device according to a first read voltage; detecting and correcting an error of the read data; and deciding a second read voltage for reading the selected memory area when an error of the read data is uncorrectable. The second read voltage is decided according to either the number of logical 0s or 1s included in the read data, or a ratio of logical 1s to logical 0s in the read data.

2. 发明授权

US09812206B2 3D flash memory device having different dummy word lines and data storage devices including same 有权
公开(公告)号：US09812206B2
公开(公告)日：2017-11-07
申请号：US14162905
申请日：2014-01-24
申请人： Sang-Wan Nam , Kitae Park
发明人： Sang-Wan Nam , Kitae Park
IPC分类号： G11C11/34 , G11C16/04 , G11C16/16 , G11C16/34 , G11C16/08 , G11C16/10
CPC分类号： G11C16/0483 , G11C16/08 , G11C16/10 , G11C16/16 , G11C16/3427
摘要： A three-dimensional (3D) flash memory includes a first dummy word line disposed between a ground select line and a lowermost main word line, and a second dummy word line of different word line configuration disposed between a string select line and an upper most main word line.

3. 发明授权

US09552886B2 Memory system and method of driving memory system using zone voltages 有权
标题翻译：使用区域电压驱动存储器系统的存储器系统和方法
公开(公告)号：US09552886B2
公开(公告)日：2017-01-24
申请号：US14855433
申请日：2015-09-16
申请人： Sang-Wan Nam , Minsu Kim , Kang-Bin Lee , Kitae Park
发明人： Sang-Wan Nam , Minsu Kim , Kang-Bin Lee , Kitae Park
IPC分类号： G11C16/10 , G11C16/26 , G11C16/30 , G11C5/14 , G11C16/24 , G11C16/08 , G11C16/04 , G11C16/16 , G11C16/34 , G11C16/14
CPC分类号： G11C16/24 , G11C5/147 , G11C16/0483 , G11C16/08 , G11C16/10 , G11C16/14 , G11C16/16 , G11C16/26 , G11C16/3418 , G11C16/3459
摘要： A method is provided for driving a nonvolatile memory device, including multiple strings, where each string is formed by penetrating plate-shaped word lines stacked on a substrate. The method includes configuring the word lines of a string in multiple zones based on zone configuration information, and applying zone voltages to the zones, respectively. The zone configuration information is varied according to a mode of operation.
摘要翻译：提供一种用于驱动包括多个串的非易失性存储器件的方法，其中通过穿过堆叠在衬底上的板状字线形成每个串。该方法包括基于区域配置信息配置多个区域中的字符串的字线，并且将区域电压分别应用于区域。区域配置信息根据操作模式而变化。

4. 发明授权

US09431062B2 Nonvolatile memory device and method of driving word line of the nonvolatile memory 有权
标题翻译：非易失性存储器件和驱动非易失性存储器字线的方法
公开(公告)号：US09431062B2
公开(公告)日：2016-08-30
申请号：US14567652
申请日：2014-12-11
申请人： Sang-Won Park , Kitae Park , Sang-Won Shim
发明人： Sang-Won Park , Kitae Park , Sang-Won Shim
IPC分类号： G11C16/26 , G11C16/10 , G11C16/08 , G11C16/30 , G11C16/32 , G11C5/02 , G11C8/08 , G11C7/04 , G11C11/56 , G11C16/04
CPC分类号： G11C8/08 , G11C5/02 , G11C7/04 , G11C8/10 , G11C11/5628 , G11C11/5642 , G11C16/0483 , G11C16/08 , G11C16/10 , G11C16/30 , G11C16/32
摘要： A word line driving method is for a nonvolatile memory device including a plurality of memory blocks having a plurality of strings which is formed in a direction perpendicular to a substrate and connected between bit lines and a common source line. The method includes applying an offset pulse to a word line for a predetermined time to shorten a word line setting time, and applying a target pulse having a level which is higher or lower than a level of the offset pulse to the word line after the predetermined time.
摘要翻译：字线驱动方法是用于非易失性存储器件，其包括具有多个串的多个存储块，所述多个存储块形成在与衬底垂直的方向上并连接在位线和公共源极线之间。该方法包括将偏移脉冲施加到字线预定时间以缩短字线设置时间，并且在预定的时间之后将具有高于或低于偏移脉冲的电平的电平的目标脉冲施加到字线时间。

5. 发明授权

US09245630B2 Memory system comprising nonvolatile memory device and program method thereof 有权
标题翻译：包括非易失性存储器件及其程序方法的存储器系统
公开(公告)号：US09245630B2
公开(公告)日：2016-01-26
申请号：US14161886
申请日：2014-01-23
申请人： Donghun Kwak , Kitae Park
发明人： Donghun Kwak , Kitae Park
IPC分类号： G11C16/04 , G11C16/10 , G11C11/56 , G11C16/22
CPC分类号： G11C16/10 , G11C11/5628 , G11C16/22
摘要： A memory system includes a nonvolatile memory device, and a memory controller configured to control the nonvolatile memory device such that memory cells connected with a selected row of the nonvolatile memory device are programmed by one of a first program mode and a second program mode. At the first program mode, a plurality of logical pages corresponding in number to a maximum page number is stored at the memory cells, and at the second program mode, one or more logical pages the number of which is less than the maximum page number are stored at the memory cells using a bias condition that is different from that used in the first program mode.
摘要翻译：存储器系统包括非易失性存储器设备和配置成控制非易失性存储器件的存储器控制器，使得与非易失性存储器件的选定行连接的存储单元通过第一程序模式和第二程序模式之一进行编程。在第一编程模式下，存储器单元中存储有多个对应于最大页号的逻辑页，并且在第二编程模式下，一个或多个逻辑页数小于最大页数，使用与第一程序模式中使用的偏差条件不同的偏置条件存储在存储器单元。

6. 发明授权

US09165669B2 Memory system and method of driving memory system using zone voltages 有权
标题翻译：使用区域电压驱动存储器系统的存储器系统和方法
公开(公告)号：US09165669B2
公开(公告)日：2015-10-20
申请号：US14056268
申请日：2013-10-17
申请人： Sang-Wan Nam , Minsu Kim , Kang-Bin Lee , Kitae Park
发明人： Sang-Wan Nam , Minsu Kim , Kang-Bin Lee , Kitae Park
IPC分类号： G11C16/10 , G11C16/26 , G11C16/30 , G11C5/14 , G11C16/34 , G11C16/16 , G11C16/08 , G11C16/04
CPC分类号： G11C16/24 , G11C5/147 , G11C16/0483 , G11C16/08 , G11C16/10 , G11C16/14 , G11C16/16 , G11C16/26 , G11C16/3418 , G11C16/3459
摘要： A method is provided for driving a nonvolatile memory device, including multiple strings, where each string is formed by penetrating plate-shaped word lines stacked on a substrate. The method includes configuring the word lines of a string in multiple zones based on zone configuration information, and applying zone voltages to the zones, respectively. The zone configuration information is varied according to a mode of operation.
摘要翻译：提供一种用于驱动包括多个串的非易失性存储器件的方法，其中通过穿过堆叠在衬底上的板状字线形成每个串。该方法包括基于区域配置信息配置多个区域中的字符串的字线，并且将区域电压分别应用于区域。区域配置信息根据操作模式而变化。

7. 发明授权

US08976587B2 Data storage system having multi-bit memory device and operating method thereof 有权
标题翻译：具有多位存储装置的数据存储系统及其操作方法
公开(公告)号：US08976587B2
公开(公告)日：2015-03-10
申请号：US13737140
申请日：2013-01-09
申请人： Sangyong Yoon , Kitae Park , Jinman Han , Wonseok Lee
发明人： Sangyong Yoon , Kitae Park , Jinman Han , Wonseok Lee
IPC分类号： G11C16/04 , G11C16/10 , G11C11/56 , G11C16/26 , G11C14/00
CPC分类号： G11C16/10 , G11C11/56 , G11C11/5628 , G11C14/0018 , G11C16/0483 , G11C16/26 , G11C2211/5641 , G11C2211/5642 , G11C2211/5643
摘要： The operating method of a data storage device includes storing data in a buffer memory according to an external request, and determining whether the data stored in the buffer memory is data accompanying a buffer program operation of a memory cell array. When the data stored in the buffer memory is data accompanying the buffer program operation, the method further includes determining whether a main program operation on the memory cell array is required, and when a main program operation on the memory cell array is required, determining a program pattern of the main program operation on the memory cell array. The method further includes issuing a set of commands for the main program operation on the memory cell array to a multi-bit memory device based on the determined program pattern.
摘要翻译：数据存储装置的操作方法包括根据外部请求将数据存储在缓冲存储器中，并且确定存储在缓冲存储器中的数据是否是伴随存储器单元阵列的缓冲器程序操作的数据。当存储在缓冲存储器中的数据是与缓冲器程序操作相关的数据时，该方法还包括确定是否需要对存储单元阵列的主程序操作，以及当需要存储单元阵列的主程序操作时，存储单元阵列中的主程序操作的程序模式。该方法还包括基于所确定的程序模式向存储器单元阵列发出用于主程序操作的一组命令到多位存储器件。

8. 发明授权

US08812933B2 Memory system and operating method thereof 有权
标题翻译：存储系统及其操作方法
公开(公告)号：US08812933B2
公开(公告)日：2014-08-19
申请号：US13449501
申请日：2012-04-18
申请人： Sang-Hyun Joo , Kitae Park , Sangyong Yoon , Jinman Han
发明人： Sang-Hyun Joo , Kitae Park , Sangyong Yoon , Jinman Han
IPC分类号： G06F11/00 , G11C29/00 , H03M13/00 , G11C11/34 , G11C8/00 , G06F11/10 , G06F11/08 , H03M13/15
CPC分类号： G06F11/1016 , G06F11/08 , G06F11/10 , G06F11/1008 , G06F11/1048 , G06F11/1068 , G06F11/1076 , G06F11/108 , G11C11/5628 , G11C16/10 , G11C16/3418 , H03M13/151 , H03M13/1525 , H03M13/1545
摘要： A memory system includes a nonvolatile memory device and a memory controller configured to control the nonvolatile memory device and configured to provide the nonvolatile memory device with error flag information including error location information of an error of data read from the nonvolatile memory device.
摘要翻译：存储器系统包括非易失性存储器件和存储器控制器，其被配置为控制非易失性存储器件并且被配置为向非易失性存储器件提供包括从非易失性存储器件读取的数据的错误的错误位置信息的错误标志信息。

9. 发明申请

US20140219020A1 MEMORY SYSTEM COMPRISING NONVOLATILE MEMORY DEVICE AND PROGRAM METHOD THEREOF 有权
标题翻译：包含非易失性存储器件的存储器系统及其程序方法
公开(公告)号：US20140219020A1
公开(公告)日：2014-08-07
申请号：US14161886
申请日：2014-01-23
申请人： DONGHUN KWAK , KITAE PARK
发明人： DONGHUN KWAK , KITAE PARK
IPC分类号： G11C16/10
CPC分类号： G11C16/10 , G11C11/5628 , G11C16/22
摘要： A memory system includes a nonvolatile memory device, and a memory controller configured to control the nonvolatile memory device such that memory cells connected with a selected row of the nonvolatile memory device are programmed by one of a first program mode and a second program mode. At the first program mode, a plurality of logical pages corresponding in number to a maximum page number is stored at the memory cells, and at the second program mode, one or more logical pages the number of which is less than the maximum page number are stored at the memory cells using a bias condition that is different from that used in the first program mode.
摘要翻译：存储器系统包括非易失性存储器设备和配置成控制非易失性存储器件的存储器控制器，使得与非易失性存储器件的选定行连接的存储单元通过第一程序模式和第二程序模式之一进行编程。在第一编程模式下，存储器单元中存储有多个对应于最大页号的逻辑页，并且在第二编程模式下，一个或多个逻辑页数小于最大页数，使用与第一程序模式中使用的偏差条件不同的偏置条件存储在存储器单元。

10. 发明授权

US08705273B2 Negative voltage generator, decoder, nonvolatile memory device and memory system using negative voltage 有权
标题翻译：负电压发生器，解码器，非易失性存储器件和使用负电压的存储器系统
公开(公告)号：US08705273B2
公开(公告)日：2014-04-22
申请号：US13323868
申请日：2011-12-13
申请人： Moosung Kim , Jaewoo Im , Jae-Duk Yu , Kitae Park , Ohsuk Kwon
发明人： Moosung Kim , Jaewoo Im , Jae-Duk Yu , Kitae Park , Ohsuk Kwon
IPC分类号： G11C16/04
CPC分类号： G11C11/5628 , G11C5/14 , G11C5/143 , G11C5/145 , G11C5/147 , G11C11/5642 , G11C16/0483 , G11C16/08 , G11C16/30 , G11C16/3459 , G11C2211/5641
摘要： A negative voltage generator includes a direct current voltage generator configured to generate a direct current voltage, a reference voltage generator configured to generate a reference voltage, an oscillator configured to generate an oscillation clock, a charge pump configured to generate a negative voltage in response to a pump clock, and a voltage detector. The voltage detector is configured to detect the negative voltage by comparing a division voltage, obtained by voltage dividing the direct current voltage, with the reference voltage, and to generate the pump clock corresponding to the detected negative voltage based on the oscillation clock.
摘要翻译：负电压发生器包括被配置为产生直流电压的直流电压发生器，被配置为产生参考电压的参考电压发生器，被配置为产生振荡时钟的振荡器，配置成响应于泵时钟和电压检测器。电压检测器被配置为通过将通过分压直流电压获得的分压与参考电压进行比较来检测负电压，并且基于振荡时钟产生对应于检测到的负电压的泵时钟。

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