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1. 发明授权

US08404532B2 Transferred thin film transistor and method for manufacturing the same 有权
标题翻译：转移薄膜晶体管及其制造方法
公开(公告)号：US08404532B2
公开(公告)日：2013-03-26
申请号：US12782303
申请日：2010-05-18
申请人： Jae Bon Koo , Jong-Hyun Ahn , Seung Youl Kang , Hasan Musarrat , In-Kyu You , Kyoung Ik Cho
发明人： Jae Bon Koo , Jong-Hyun Ahn , Seung Youl Kang , Hasan Musarrat , In-Kyu You , Kyoung Ik Cho
IPC分类号： H01L21/336
CPC分类号： H01L27/1266 , H01L27/1214 , H01L27/1218 , H01L29/78603
摘要： Provided are a transferred thin film transistor and a method of manufacturing the same. The method includes: forming a source region and a drain region that extend in a first direction in a first substrate and a channel region between the source region and the drain region; forming trenches that extend in a second direction in the first substrate to define an active layer between the trenches, the second direction intersecting the first direction; separating the active layer between the trenches from the first substrate by performing an anisotropic etching process on the first substrate inside the trenches; attaching the active layer on a second substrate; and forming a gate electrode in the first direction on the channel region of the active layer.
摘要翻译：提供了一种转移的薄膜晶体管及其制造方法。该方法包括：形成在第一衬底中沿第一方向延伸的源极区域和漏极区域以及源极区域和漏极区域之间的沟道区域; 形成在所述第一衬底中沿第二方向延伸的沟槽，以在所述沟槽之间限定有源层，所述第二方向与所述第一方向相交; 通过在所述沟槽内的所述第一衬底上进行各向异性蚀刻工艺，从所述第一衬底分离所述沟槽之间的有源层; 将活性层附着在第二基底上; 以及在有源层的沟道区上沿第一方向形成栅电极。

2. 发明申请

US20110133257A1 TRANSFERRED THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：转印薄膜晶体管及其制造方法
公开(公告)号：US20110133257A1
公开(公告)日：2011-06-09
申请号：US12782303
申请日：2010-05-18
申请人： Jae Bon KOO , Jong-Hyun Ahn , Seung Youl Kang , Hasan Musarrat , In-Kyu You , Kyoung Ik Cho
发明人： Jae Bon KOO , Jong-Hyun Ahn , Seung Youl Kang , Hasan Musarrat , In-Kyu You , Kyoung Ik Cho
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L27/1266 , H01L27/1214 , H01L27/1218 , H01L29/78603
摘要： Provided are a transferred thin film transistor and a method of manufacturing the same. The method includes: forming a source region and a drain region that extend in a first direction in a first substrate and a channel region between the source region and the drain region; forming trenches that extend in a second direction in the first substrate to define an active layer between the trenches, the second direction intersecting the first direction; separating the active layer between the trenches from the first substrate by performing an anisotropic etching process on the first substrate inside the trenches; attaching the active layer on a second substrate; and forming a gate electrode in the first direction on the channel region of the active layer.
摘要翻译：提供了一种转移的薄膜晶体管及其制造方法。该方法包括：形成在第一衬底中沿第一方向延伸的源极区域和漏极区域以及源极区域和漏极区域之间的沟道区域; 形成在所述第一衬底中沿第二方向延伸的沟槽，以在所述沟槽之间限定有源层，所述第二方向与所述第一方向相交; 通过在所述沟槽内的所述第一衬底上进行各向异性蚀刻工艺，从所述第一衬底分离所述沟槽之间的有源层; 将活性层附着在第二基底上; 以及在有源层的沟道区上沿第一方向形成栅电极。

3. 发明申请

US20110136296A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20110136296A1
公开(公告)日：2011-06-09
申请号：US12766953
申请日：2010-04-26
申请人： Jae Bon Koo , Seung Youl Kang , In-Kyu You
发明人： Jae Bon Koo , Seung Youl Kang , In-Kyu You
IPC分类号： H01L21/336 , H01L21/50
CPC分类号： H01L21/6835 , H01L21/84 , H01L24/83 , H01L24/93 , H01L2221/6835 , H01L2221/68359 , H01L2221/68368 , H01L2224/2919 , H01L2224/83192 , H01L2224/8385 , H01L2924/01005 , H01L2924/01006 , H01L2924/01015 , H01L2924/01023 , H01L2924/01033 , H01L2924/01049 , H01L2924/01051 , H01L2924/01072 , H01L2924/0665 , H01L2924/07802 , H01L2924/00
摘要： Provided is a method for manufacturing a semiconductor device. The method includes: providing a first substrate where an active layer is formed on a buried insulation layer; forming a gate insulation layer on the active layer; forming a gate electrode on the gate insulation layer; forming a source/drain region on the active layer at both sides of the gate electrode; exposing the buried insulation layer around a thin film transistor (TFT) including the gate electrode and the source/drain region; forming an under cut at the bottom of the TFT by partially removing the buried insulation layer; and transferring the TFT on a second substrate.
摘要翻译：提供一种半导体器件的制造方法。该方法包括：提供在掩埋绝缘层上形成有源层的第一衬底; 在有源层上形成栅极绝缘层; 在栅极绝缘层上形成栅电极; 在栅极两侧的有源层上形成源/漏区; 将掩埋绝缘层暴露在包括栅电极和源/漏区的薄膜晶体管（TFT）周围; 通过部分去除掩埋绝缘层在TFT的底部形成底切; 以及在第二基板上转移TFT。

4. 发明申请

US20110204334A1 ORGANIC THIN FILM TRANSISTOR AND METHOD OF FORMING THE SAME 有权
标题翻译：有机薄膜晶体管及其形成方法
公开(公告)号：US20110204334A1
公开(公告)日：2011-08-25
申请号：US12858868
申请日：2010-08-18
申请人： Kang Dae KIM , In-Kyu You , Jae Bon Koo , Yong Suk Yang , Seung Youl Kang
发明人： Kang Dae KIM , In-Kyu You , Jae Bon Koo , Yong Suk Yang , Seung Youl Kang
IPC分类号： H01L51/10 , H01L51/40
CPC分类号： H01L51/0545 , H01L51/105
摘要： Provided are an organic thin film transistor and a method of forming the same. The method comprises forming a gate electrode on a substrate, forming a gate dielectric, which covers the gate electrode and includes a recess region at an upper portion, on the substrate, forming a source electrode and a drain electrode in the recess region, and forming an organic semiconductor layer between the source electrode and the drain electrode in the recess region.
摘要翻译：提供一种有机薄膜晶体管及其形成方法。该方法包括在衬底上形成栅电极，形成覆盖栅电极并在衬底上包括上部的凹陷区的栅极电介质，在凹陷区域中形成源电极和漏电极，并形成在凹陷区域中的源电极和漏电极之间的有机半导体层。

5. 发明申请

US20100144088A1 METHOD FOR FORMING METAL OXIDE AND METHOD FOR FORMING TRANSISTOR STRUCTURE WITH THE SAME 审中-公开
标题翻译：形成金属氧化物的方法及其形成晶体结构的方法
公开(公告)号：US20100144088A1
公开(公告)日：2010-06-10
申请号：US12631206
申请日：2009-12-04
申请人： Jiyoung Oh , Jonghyurk Park , Seung Youl Kang , Chul Am Kim , In-Kyu You , Kyoung Ik Cho
发明人： Jiyoung Oh , Jonghyurk Park , Seung Youl Kang , Chul Am Kim , In-Kyu You , Kyoung Ik Cho
IPC分类号： H01L21/328 , C01G9/02
CPC分类号： H01L29/7869 , B82Y10/00 , C01G9/02 , C01P2002/52 , C01P2004/03 , C01P2006/40 , H01L29/66969
摘要： Provided is a method for forming a metal oxide. A method for forming a metal oxide according to embodiments of the present invention includes preparing a metal oxide precursor solution including a dopant chemical species, preparing an alcohol-based solution including a basic chemical species, reacting the alcohol-based solution with the metal oxide precursor solution to form a reactant, and purifying the reactant to form a metal oxide.
摘要翻译：提供了形成金属氧化物的方法。根据本发明实施方案的形成金属氧化物的方法包括制备包括掺杂剂化学物质的金属氧化物前体溶液，制备包含碱性化学物质的醇基溶液，使醇类溶液与金属氧化物前体反应溶液以形成反应物，并纯化反应物以形成金属氧化物。

6. 发明授权

US08344366B2 Organic thin film transistor and method of forming the same 有权
标题翻译：有机薄膜晶体管及其形成方法
公开(公告)号：US08344366B2
公开(公告)日：2013-01-01
申请号：US12858868
申请日：2010-08-18
申请人： Kang Dae Kim , In-Kyu You , Jae Bon Koo , Yong Suk Yang , Seung Youl Kang
发明人： Kang Dae Kim , In-Kyu You , Jae Bon Koo , Yong Suk Yang , Seung Youl Kang
IPC分类号： H01L51/10
CPC分类号： H01L51/0545 , H01L51/105
摘要： Provided are an organic thin film transistor and a method of forming the same. The method comprises forming a gate electrode on a substrate, forming a gate dielectric, which covers the gate electrode and includes a recess region at an upper portion, on the substrate, forming a source electrode and a drain electrode in the recess region, and forming an organic semiconductor layer between the source electrode and the drain electrode in the recess region.
摘要翻译：提供一种有机薄膜晶体管及其形成方法。该方法包括在衬底上形成栅电极，形成覆盖栅电极并在衬底上包括上部的凹陷区的栅极电介质，在凹陷区域中形成源电极和漏电极，并形成在凹陷区域中的源电极和漏电极之间的有机半导体层。

7. 发明授权

US08198148B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08198148B2
公开(公告)日：2012-06-12
申请号：US12766953
申请日：2010-04-26
申请人： Jae Bon Koo , Seung Youl Kang , In-Kyu You
发明人： Jae Bon Koo , Seung Youl Kang , In-Kyu You
IPC分类号： H01L21/84
CPC分类号： H01L21/6835 , H01L21/84 , H01L24/83 , H01L24/93 , H01L2221/6835 , H01L2221/68359 , H01L2221/68368 , H01L2224/2919 , H01L2224/83192 , H01L2224/8385 , H01L2924/01005 , H01L2924/01006 , H01L2924/01015 , H01L2924/01023 , H01L2924/01033 , H01L2924/01049 , H01L2924/01051 , H01L2924/01072 , H01L2924/0665 , H01L2924/07802 , H01L2924/00
摘要： Provided is a method for manufacturing a semiconductor device. The method includes: providing a first substrate where an active layer is formed on a buried insulation layer; forming a gate insulation layer on the active layer; forming a gate electrode on the gate insulation layer; forming a source/drain region on the active layer at both sides of the gate electrode; exposing the buried insulation layer around a thin film transistor (TFT) including the gate electrode and the source/drain region; forming an under cut at the bottom of the TFT by partially removing the buried insulation layer; and transferring the TFT on a second substrate.
摘要翻译：提供一种半导体器件的制造方法。该方法包括：提供在掩埋绝缘层上形成有源层的第一衬底; 在有源层上形成栅极绝缘层; 在栅极绝缘层上形成栅电极; 在栅极两侧的有源层上形成源/漏区; 将掩埋绝缘层暴露在包括栅电极和源/漏区的薄膜晶体管（TFT）周围; 通过部分去除掩埋绝缘层在TFT的底部形成底切; 以及在第二基板上转移TFT。

8. 发明申请

US20110092032A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件的制造方法
公开(公告)号：US20110092032A1
公开(公告)日：2011-04-21
申请号：US12766958
申请日：2010-04-26
申请人： Jae Bon Koo , Seung Youl Kang
发明人： Jae Bon Koo , Seung Youl Kang
IPC分类号： H01L21/336
CPC分类号： H01L29/78603 , H01L21/84
摘要： Provided is a manufacturing methods of a semiconductor device. The methods includes: forming an active layer on a first substrate; bonding a top surface of the active layer with a second substrate and separating the active layer from the first substrate; forming conductive impurity regions corresponding to source and drain regions of the active layer bonded on the second substrate; bonding a third substrate on a bottom surface of the active layer and removing the second substrate; and forming a gate electrode on a top between the conductive impurity regions of the active layer bonded on the third substrate and forming source and drain electrodes on the conductive impurity regions.
摘要翻译：提供半导体器件的制造方法。所述方法包括：在第一基板上形成有源层; 将有源层的顶表面与第二衬底结合并将有源层与第一衬底分离; 形成对应于结合在所述第二基板上的所述有源层的源区和漏区的导电杂质区; 将第三衬底接合在有源层的底表面上并移除第二衬底; 以及在结合在第三基板上的有源层的导电杂质区之间的顶部上形成栅电极，并在导电杂质区上形成源电极和漏电极。

9. 发明申请

US20100243994A1 TRANSPARENT NONVOLATILE MEMORY THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：透明非易失性存储器薄膜晶体管及其制造方法
公开(公告)号：US20100243994A1
公开(公告)日：2010-09-30
申请号：US12555986
申请日：2009-09-09
申请人： Sung Min Yoon , Shin Hyuk Yang , Soon Woon Jung , Seung Youl Kang , Doo Hee Cho , Chun Won Byun , Chi Sun Hwang , Byoung Gon Yu , Kyoung Ik Cho
发明人： Sung Min Yoon , Shin Hyuk Yang , Soon Woon Jung , Seung Youl Kang , Doo Hee Cho , Chun Won Byun , Chi Sun Hwang , Byoung Gon Yu , Kyoung Ik Cho
IPC分类号： H01L27/115 , H01L51/10 , H01L29/12 , H01L21/8246
CPC分类号： H01L21/28291 , H01L29/78391 , H01L29/7869
摘要： Provided are a transparent nonvolatile memory thin film transistor (TFT) and a method of manufacturing the same. The memory TFT includes source and drain electrodes disposed on a transparent substrate. A transparent semiconductor thin layer is disposed on the source and drain electrodes and the transparent substrate interposed between the source and drain electrodes. An organic ferroelectric thin layer is disposed on the transparent semiconductor thin layer. A gate electrode is disposed on the organic ferroelectric thin layer in alignment with the transparent semiconductor thin layer. Thus, the transparent nonvolatile memory TFT employs the organic ferroelectric thin layer, the oxide semiconductor thin layer, and auxiliary insulating layers disposed above and below the organic ferroelectric thin layer, thereby enabling low-cost manufacture of a transparent nonvolatile memory device capable of a low-temperature process.
摘要翻译：提供了一种透明非易失性存储器薄膜晶体管（TFT）及其制造方法。存储TFT包括设置在透明基板上的源极和漏极。透明半导体薄层设置在源电极和漏电极之间，并且透明基板设置在源极和漏极之间。有机铁电薄层设置在透明半导体薄层上。栅电极与透明半导体薄层对准地设置在有机铁电薄层上。因此，透明非易失性存储器TFT采用有机铁电薄层，氧化物半导体薄层和设置在有机铁电薄层之上和之下的辅助绝缘层，从而能够低成本地制造能够低的透明非易失性存储器件温度过程。

10. 发明授权

US08584743B2 Solid type heat dissipation device 有权
标题翻译：固体散热装置
公开(公告)号：US08584743B2
公开(公告)日：2013-11-19
申请号：US12765120
申请日：2010-04-22
申请人： Seok-Hwan Moon , Seung Youl Kang , Kyoung Ik Cho , Moo Jung Chu
发明人： Seok-Hwan Moon , Seung Youl Kang , Kyoung Ik Cho , Moo Jung Chu
IPC分类号： F28F7/00
CPC分类号： F28D15/00 , H01L23/36 , H01L23/373 , H01L2924/0002 , H01L2924/00
摘要： Provided is a solid type heat dissipation device for electronic communication appliances. The solid type heat dissipation device includes a graphite thin plate horizontally transferring heat, a plurality of metal fillers passing through the graphite thin plate to vertically transfer heat, and a plurality of metal thin plates attached to upper and lower surfaces of the graphite thin plate and connected to the metal fillers.
摘要翻译：提供一种用于电子通信设备的固体型散热装置。固体式散热装置包括水平传递热量的石墨薄板，通过石墨薄板的多个金属填料垂直传递热量，以及附着在石墨薄板的上表面和下表面上的多个金属薄板，连接到金属填料。

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