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1. 发明授权

US07722737B2 Gas distribution system for improved transient phase deposition 有权
标题翻译：用于改善瞬态相沉积的气体分配系统
公开(公告)号：US07722737B2
公开(公告)日：2010-05-25
申请号：US11123453
申请日：2005-05-04
申请人： Sudhir Gondhalekar , Robert Duncan , Siamak Salimian , Muhammad M. Rasheed , Harry Smith Whitesell , Bruno Geoffrion , Padmanabhan Krishnaraj , Rudolf Gujer , Diana E. Gujer, legal representative
发明人： Sudhir Gondhalekar , Robert Duncan , Siamak Salimian , Muhammad M. Rasheed , Harry Smith Whitesell , Bruno Geoffrion , Padmanabhan Krishnaraj , Rudolf Gujer
IPC分类号： H01L21/326 , C23C16/505
CPC分类号： C23C16/4558
摘要： Embodiments of the present invention are directed to a gas distribution system which distributes the gas more uniformly into a process chamber. In one embodiment, a gas distribution system comprises a gas ring including an outer surface and an inner surface, and a gas inlet disposed at the outer surface of the gas ring. The gas inlet is fluidicly coupled with a first channel which is disposed between the outer surface and the inner surface of the gas ring. A plurality of gas outlets are distributed over the inner surface of the gas ring, and are fluidicly coupled with a second channel which is disposed between the outer surface and the inner surface of the gas ring. A plurality of orifices are fluidicly coupled between the first channel and the second channel. The plurality of orifices are spaced from the gas inlet by a plurality of distances, and have sizes which vary with the distances from the gas inlet as measured along the first channel, such that the size of the orifice increases with an increase in the distance between the orifice and the gas inlet as measured along the first channel.
摘要翻译：本发明的实施例涉及一种将气体更均匀地分配到处理室中的气体分配系统。在一个实施例中，气体分配系统包括包括外表面和内表面的气环，以及设置在气环的外表面处的气体入口。气体入口与设置在气体环的外表面和内表面之间的第一通道流体耦合。多个气体出口分布在气环的内表面上，并且与设置在气体环的外表面和内表面之间的第二通道流体连接。多个孔流体耦合在第一通道和第二通道之间。多个孔与气体入口间隔多个距离，并且具有随着沿着第一通道测量的与气体入口的距离而变化的尺寸，使得孔的尺寸随着气体入口之间的距离的增加而增加沿着第一通道测量的孔口和气体入口。

2. 发明申请

US20080041821A1 Gas Distribution System for Improved Transient Phase Deposition 审中-公开
标题翻译：用于改进瞬态相沉积的气体分配系统
公开(公告)号：US20080041821A1
公开(公告)日：2008-02-21
申请号：US11877502
申请日：2007-10-23
申请人： Sudhir Gondhalekar , Robert Duncan , Siamak Salimian , Muhammad Rasheed , Harry Smith Whitesell , Bruno Geoffrion , Padmanabhan Krishnaraj , Rudolf Gujer , Diana Gujer
发明人： Sudhir Gondhalekar , Robert Duncan , Siamak Salimian , Muhammad Rasheed , Harry Smith Whitesell , Bruno Geoffrion , Padmanabhan Krishnaraj , Rudolf Gujer , Diana Gujer
IPC分类号： C23F1/00
CPC分类号： C23C16/4558
摘要： Embodiments of the present invention are directed to a gas distribution system which distributes the gas more uniformly into a process chamber. In one embodiment, a gas distribution system comprises a gas ring including an outer surface and an inner surface, and a gas inlet disposed at the outer surface of the gas ring. The gas inlet is fluidicly coupled with a first channel which is disposed between the outer surface and the inner surface of the gas ring. A plurality of gas outlets are distributed over the inner surface of the gas ring, and are fluidicly coupled with a second channel which is disposed between the outer surface and the inner surface of the gas ring. A plurality of orifices are fluidicly coupled between the first channel and the second channel. The plurality of orifices are spaced from the gas inlet by a plurality of distances, and have sizes which vary with the distances from the gas inlet as measured along the first channel, such that the size of the orifice increases with an increase in the distance between the orifice and the gas inlet as measured along the first channel.
摘要翻译：本发明的实施例涉及一种将气体更均匀地分配到处理室中的气体分配系统。在一个实施例中，气体分配系统包括包括外表面和内表面的气环，以及设置在气环的外表面处的气体入口。气体入口与设置在气体环的外表面和内表面之间的第一通道流体耦合。多个气体出口分布在气环的内表面上，并且与设置在气体环的外表面和内表面之间的第二通道流体连接。多个孔流体耦合在第一通道和第二通道之间。多个孔与气体入口间隔多个距离，并且具有随着沿着第一通道测量的与气体入口的距离而变化的尺寸，使得孔的尺寸随着气体入口之间的距离的增加而增加沿着第一通道测量的孔口和气体入口。

3. 发明申请

US20060113038A1 Gas distribution system for improved transient phase deposition 有权
标题翻译：用于改善瞬态相沉积的气体分配系统
公开(公告)号：US20060113038A1
公开(公告)日：2006-06-01
申请号：US11123453
申请日：2005-05-04
申请人： Sudhir Gondhalekar , Robert Duncan , Siamak Salimian , Muhammad Rasheed , Harry Whitesell , Bruno Geoffrion , Padmanabhan Krishnaraj , Rudolf Gujer
发明人： Sudhir Gondhalekar , Robert Duncan , Siamak Salimian , Muhammad Rasheed , Harry Whitesell , Bruno Geoffrion , Padmanabhan Krishnaraj , Rudolf Gujer
IPC分类号： H01L21/306 , C23F1/00
CPC分类号： C23C16/4558
摘要： Embodiments of the present invention are directed to a gas distribution system which distributes the gas more uniformly into a process chamber. In one embodiment, a gas distribution system comprises a gas ring including an outer surface and an inner surface, and a gas inlet disposed at the outer surface of the gas ring. The gas inlet is fluidicly coupled with a first channel which is disposed between the outer surface and the inner surface of the gas ring. A plurality of gas outlets are distributed over the inner surface of the gas ring, and are fluidicly coupled with a second channel which is disposed between the outer surface and the inner surface of the gas ring. A plurality of orifices are fluidicly coupled between the first channel and the second channel. The plurality of orifices are spaced from the gas inlet by a plurality of distances, and have sizes which vary with the distances from the gas inlet as measured along the first channel, such that the size of the orifice increases with an increase in the distance between the orifice and the gas inlet as measured along the first channel.
摘要翻译：本发明的实施例涉及一种将气体更均匀地分配到处理室中的气体分配系统。在一个实施例中，气体分配系统包括包括外表面和内表面的气环，以及设置在气环的外表面处的气体入口。气体入口与设置在气体环的外表面和内表面之间的第一通道流体耦合。多个气体出口分布在气环的内表面上，并且与设置在气体环的外表面和内表面之间的第二通道流体连接。多个孔流体耦合在第一通道和第二通道之间。多个孔与气体入口间隔多个距离，并且具有随着沿着第一通道测量的与气体入口的距离而变化的尺寸，使得孔的尺寸随着气体入口之间的距离的增加而增加沿着第一通道测量的孔口和气体入口。

4. 发明授权

US07141138B2 Gas delivery system for semiconductor processing 有权
公开(公告)号：US07141138B2
公开(公告)日：2006-11-28
申请号：US10630989
申请日：2003-07-28
申请人： Sudhir Gondhalekar , Padmanabhan Krishnaraj , Tom K. Cho , Muhammad Rasheed , Hemant Mungekar , Thanh N. Pham , Zhong Qiang Hua
发明人： Sudhir Gondhalekar , Padmanabhan Krishnaraj , Tom K. Cho , Muhammad Rasheed , Hemant Mungekar , Thanh N. Pham , Zhong Qiang Hua
IPC分类号： H01L21/306 , C23C16/00 , C23F1/00
CPC分类号： H01L21/67017 , H01L21/67109
摘要： The present invention is directed to improving defect performance in semiconductor processing systems. In specific embodiments, an apparatus for processing semiconductor substrates comprises a chamber defining a processing region therein, and a substrate support disposed in the chamber to support a semiconductor substrate. At least one nozzle extends into the chamber to introduce a process gas into the chamber through a nozzle opening. The apparatus comprises at least one heat shield, each of which is disposed around at least a portion of one of the at least one nozzle. The heat shield has an extension which projects distally of the nozzle opening of the nozzle and which includes a heat shield opening for the process gas to flow therethrough from the nozzle opening. The heat shield decreases the temperature of nozzle in the processing chamber for introducing process gases therein to reduce particles.

5. 发明授权

US08409355B2 Low profile process kit 有权
标题翻译：低调的流程套件
公开(公告)号：US08409355B2
公开(公告)日：2013-04-02
申请号：US12109187
申请日：2008-04-24
申请人： Muhammad M. Rasheed , Teruki Iwashita , Hiroshi Otake , Yuki Koga , Kazutoshi Maehara , Xinglong Chen , Sudhir Gondhalekar , Dmitry Lubomirsky
发明人： Muhammad M. Rasheed , Teruki Iwashita , Hiroshi Otake , Yuki Koga , Kazutoshi Maehara , Xinglong Chen , Sudhir Gondhalekar , Dmitry Lubomirsky
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： C23C16/4585 , C23C16/4581 , H01J37/32082 , H01J37/32642 , H01L21/68735
摘要： Embodiments of process kits for substrate supports of semiconductor substrate process chambers are provided herein. In some embodiments, a process kit for a semiconductor process chamber may include an annular body being substantially horizontal and having an inner and an outer edge, and an upper and a lower surface; an inner lip disposed proximate the inner edge and extending vertically from the upper surface; and an outer lip disposed proximate the outer edge and on the lower surface, and having a shape conforming to a surface of the substrate support pedestal. In some embodiments, a process kit for a semiconductor process chamber my include an annular body having an inner and an outer edge, and having an upper and lower surface, the upper surface disposed at a downward angle of between about 5-65 degrees in an radially outward direction from the inner edge toward the outer edge.
摘要翻译：本文提供了半导体衬底处理室的衬底支撑件的工艺组件的实施例。在一些实施例中，用于半导体处理室的处理套件可以包括基本上水平的并具有内部和外部边缘以及上部和下部表面的环形体; 靠近所述内边缘并从所述上表面垂直延伸的内唇缘; 以及设置在所述外边缘和所述下表面附近并且具有与所述基板支撑基座的表面相符的形状的外唇缘。在一些实施例中，用于半导体处理腔室的处理套件包括具有内边缘和外边缘的环形体，并具有上表面和下表面，上表面以约5-65度的向下角度设置在从内缘朝向外缘的径向向外方向。

6. 发明申请

US20070048446A1 GAS DELIVERY SYSTEM FOR SEMICONDUCTOR PROCESSING 有权
标题翻译：用于半导体加工的气体输送系统
公开(公告)号：US20070048446A1
公开(公告)日：2007-03-01
申请号：US11552129
申请日：2006-10-23
申请人： Sudhir Gondhalekar , Padmanabhan Krishnaraj , Tom Cho , Muhammad Rasheed , Hemant Mungekar , Thanh Pham , Zhong Hua
发明人： Sudhir Gondhalekar , Padmanabhan Krishnaraj , Tom Cho , Muhammad Rasheed , Hemant Mungekar , Thanh Pham , Zhong Hua
IPC分类号： C23C16/00 , B05D3/00
CPC分类号： H01L21/67017 , H01L21/67109
摘要： The present invention is directed to improving defect performance in semiconductor processing systems. In specific embodiments, an apparatus for processing semiconductor substrates comprises a chamber defining a processing region therein, and a substrate support disposed in the chamber to support a semiconductor substrate. At least one nozzle extends into the chamber to introduce a process gas into the chamber through a nozzle opening. The apparatus comprises at least one heat shield, each of which is disposed around at least a portion of one of the at least one nozzle. The heat shield has an extension which projects distally of the nozzle opening of the nozzle and which includes a heat shield opening for the process gas to flow therethrough from the nozzle opening. The heat shield decreases the temperature of nozzle in the processing chamber for introducing process gases therein to reduce particles.
摘要翻译：本发明旨在改善半导体处理系统中的缺陷性能。在具体实施例中，用于处理半导体衬底的设备包括限定其中的处理区域的腔室和设置在腔室中以支撑半导体衬底的衬底支撑件。至少一个喷嘴延伸到室中以通过喷嘴开口将工艺气体引入室中。该装置包括至少一个隔热罩，每个隔热罩设置在至少一个喷嘴之一的至少一部分周围。隔热罩具有向喷嘴的喷嘴开口向远侧突出的延伸部分，其包括用于工艺气体从喷嘴开口流过的隔热开口。隔热罩降低了处理室中的喷嘴的温度，用于将工艺气体引入其中以减少颗粒。

7. 发明授权

US07498268B2 Gas delivery system for semiconductor processing 有权
标题翻译：用于半导体加工的气体输送系统
公开(公告)号：US07498268B2
公开(公告)日：2009-03-03
申请号：US11552129
申请日：2006-10-23
申请人： Sudhir Gondhalekar , Padmanabhan Krishnaraj , Tom K. Cho , Muhammad Rasheed , Hemant Mungekar , Thanh N. Pham , Zhong Qiang Hua
发明人： Sudhir Gondhalekar , Padmanabhan Krishnaraj , Tom K. Cho , Muhammad Rasheed , Hemant Mungekar , Thanh N. Pham , Zhong Qiang Hua
IPC分类号： H01L21/461 , H01L21/302
CPC分类号： H01L21/67017 , H01L21/67109
摘要： The present invention is directed to improving defect performance in semiconductor processing systems. In specific embodiments, an apparatus for processing semiconductor substrates comprises a chamber defining a processing region therein, and a substrate support disposed in the chamber to support a semiconductor substrate. At least one nozzle extends into the chamber to introduce a process gas into the chamber through a nozzle opening. The apparatus comprises at least one heat shield, each of which is disposed around at least a portion of one of the at least one nozzle. The heat shield has an extension which projects distally of the nozzle opening of the nozzle and which includes a heat shield opening for the process gas to flow therethrough from the nozzle opening. The heat shield decreases the temperature of nozzle in the processing chamber for introducing process gases therein to reduce particles.
摘要翻译：本发明旨在改善半导体处理系统中的缺陷性能。在具体实施例中，用于处理半导体衬底的设备包括限定其中的处理区域的腔室和设置在腔室中以支撑半导体衬底的衬底支撑件。至少一个喷嘴延伸到室中以通过喷嘴开口将工艺气体引入室中。该装置包括至少一个隔热罩，每个隔热罩设置在至少一个喷嘴之一的至少一部分周围。隔热罩具有向喷嘴的喷嘴开口向远侧突出的延伸部分，其包括用于工艺气体从喷嘴开口流过的隔热开口。隔热罩降低了处理室中的喷嘴的温度，用于将工艺气体引入其中以减少颗粒。

8. 发明授权

US08108981B2 Method of making an electrostatic chuck with reduced plasma penetration and arcing 有权
标题翻译：制造具有降低的等离子体穿透和电弧放电的静电卡盘的方法
公开(公告)号：US08108981B2
公开(公告)日：2012-02-07
申请号：US11888327
申请日：2007-07-31
申请人： Dmitry Lubomirsky , Kadthala Ramaya Narendranath , Xinglong Chen , Sudhir Gondhalekar , Muhammad Rasheed , Tony Kaushal
发明人： Dmitry Lubomirsky , Kadthala Ramaya Narendranath , Xinglong Chen , Sudhir Gondhalekar , Muhammad Rasheed , Tony Kaushal
IPC分类号： B23P17/00
CPC分类号： H02N13/00 , H01L21/6833 , Y10T29/49117 , Y10T29/49885
摘要： A method of making an electrostatic chuck comprising positioning a plate into a channel in a body to form a plenum and inserting a dielectric component into an opening in the plate, where the dielectric component defines a portion of a passage from the plenum. Thereafter, depositing a dielectric layer covering at least a portion of the body and at least a portion of the plate to form a support surface. The dielectric layer is polished to a specified thickness. In one embodiment, the polishing process forms an opening through the dielectric layer to enable the dielectric component to define a passage between the support surface and the plenum. In another embodiment, at least a portion of the dielectric layer is porous proximate the dielectric component such that the porous dielectric layer and the dielectric component form a passage between the support surface and the plenum. In a further embodiment, a hole is formed through the dielectric layer and the hole in the dielectric layer and the dielectric component form a passage between the support surface and the plenum.
摘要翻译：一种制造静电卡盘的方法，包括将板定位在主体中的通道中以形成气室，并将电介质部件插入板中的开口中，其中介电部件限定了来自气室的通道的一部分。此后，沉积覆盖主体的至少一部分和板的至少一部分以形成支撑表面的电介质层。将电介质层抛光至规定的厚度。在一个实施例中，抛光工艺形成通过介电层的开口，以使得介质部件能够在支撑表面和集气室之间限定通道。在另一个实施例中，电介质层的至少一部分在绝缘元件附近是多孔的，使得多孔介电层和电介质元件在支撑表面和增压室之间形成通道。在另一实施例中，穿过电介质层形成孔，并且电介质层中的孔和电介质元件在支撑表面和气室之间形成通道。

9. 发明授权

US06682603B2 Substrate support with extended radio frequency electrode upper surface 有权
标题翻译：基板支持扩展射频电极上表面
公开(公告)号：US06682603B2
公开(公告)日：2004-01-27
申请号：US10141391
申请日：2002-05-07
申请人： Sudhir Gondhalekar , Dongqing Li , Canfeng Lai , Zhengquan Tan , Steve H. Kim , Alexander Veyster
发明人： Sudhir Gondhalekar , Dongqing Li , Canfeng Lai , Zhengquan Tan , Steve H. Kim , Alexander Veyster
IPC分类号： C23C1600
CPC分类号： C23C16/45563 , C23C16/4583 , C23C16/466 , C23C16/507 , H01J37/32082 , H01J37/32532 , H01L21/28556 , H01L21/67069
摘要： A substrate support utilized in high-density plasma chemical vapor deposition (HDP-CVD) processing functions as a radio frequency (RF) electrode (e.g., a bias RF cathode). An upper surface of the substrate support has a central upper surface portion and a peripheral upper surface portion, with the peripheral upper surface portion recessed relative to the central upper surface portion. The upper surface of the support extends beyond an outer edge of the substrate when the substrate is positioned on the substrate support. This extension in the support upper surface may enhance process performance by reducing electric field edge effects, as well as by improving directional distribution of ions traveling to the substrate. Since the peripheral upper surface portion is recessed relative to the central upper surface portion, a detachable shield can be disposed on the peripheral upper surface portion for preventing undesirable deposition on, or chemical attack of, the peripheral upper surface is portion, without interfering with positioning of the substrate.
摘要翻译：用于高密度等离子体化学气相沉积（HDP-CVD）处理的衬底支撑件用作射频（RF）电极（例如，偏压RF阴极）。基板支撑件的上表面具有中心上表面部分和周边上表面部分，周边上表面部分相对于中央上表面部分凹陷。当衬底定位在衬底支撑件上时，支撑件的上表面延伸超过衬底的外边缘。支撑上表面的这种延伸可以通过减小电场边缘效应以及改善行进到基底的离子的方向分布来增强工艺性能。由于外周上表面部分相对于中央上表面部分凹陷，所以可以在外围上表面部分设置可拆卸的屏蔽件，以防止周边上表面部分的不希望的沉积或化学侵蚀，而不会妨碍定位的基底。

10. 发明授权

US07354501B2 Upper chamber for high density plasma CVD 失效
标题翻译：用于高密度等离子体CVD的上室
公开(公告)号：US07354501B2
公开(公告)日：2008-04-08
申请号：US10150458
申请日：2002-05-17
申请人： Sudhir Gondhalekar , Tom K. Cho , Rolf Guenther , Steve H. Kim , Mehrdad Moshfegh , Shigeru Takehiro , Thomas Kring , Tetsuya Ishikawa
发明人： Sudhir Gondhalekar , Tom K. Cho , Rolf Guenther , Steve H. Kim , Mehrdad Moshfegh , Shigeru Takehiro , Thomas Kring , Tetsuya Ishikawa
IPC分类号： C23C16/00 , H01L21/306
CPC分类号： H01J37/32522 , C23C16/507 , H01J37/321
摘要： The present invention is directed to an upper chamber design of a plasma CVD chamber which provides more uniform conditions for forming thin CVD films on a substrate. Embodiments of the invention improve temperature control of the upper chamber and improve particle performance by reducing or minimizing the temperature fluctuations on the dome between the deposition and non-deposition cycles. In accordance with an aspect of the present invention, an apparatus for processing semiconductor substrates comprises a chamber defining a plasma processing region therein. The chamber includes a bottom, a side wall, and a dome disposed on top of the side wall. The dome has a substantially flat dome top. A top RF coil is disposed above the dome top, and has an outer loop which is larger in size than the substrates to be processed in the chamber. A cold plate is disposed above the top RF coil, and is larger in size than the substrates to be processed in the chamber.
摘要翻译：本发明涉及一种等离子体CVD室的上室设计，其提供在衬底上形成薄CVD膜的更均匀的条件。本发明的实施例通过减少或最小化沉积和非沉积循环之间的圆顶上的温度波动来改善上室的温度控制并提高颗粒性能。根据本发明的一个方面，用于处理半导体衬底的设备包括限定其中的等离子体处理区域的室。该室包括底部，侧壁和设置在侧壁顶部的圆顶。圆顶具有基本平坦的圆顶。顶部RF线圈设置在圆顶顶部上方，并且具有比在腔室中要处理的基板尺寸更大的外环。冷板设置在顶部RF线圈上方，并且尺寸大于在腔室中要处理的基板。

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