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1. 发明授权

US06682603B2 Substrate support with extended radio frequency electrode upper surface 有权
标题翻译：基板支持扩展射频电极上表面
公开(公告)号：US06682603B2
公开(公告)日：2004-01-27
申请号：US10141391
申请日：2002-05-07
申请人： Sudhir Gondhalekar , Dongqing Li , Canfeng Lai , Zhengquan Tan , Steve H. Kim , Alexander Veyster
发明人： Sudhir Gondhalekar , Dongqing Li , Canfeng Lai , Zhengquan Tan , Steve H. Kim , Alexander Veyster
IPC分类号： C23C1600
CPC分类号： C23C16/45563 , C23C16/4583 , C23C16/466 , C23C16/507 , H01J37/32082 , H01J37/32532 , H01L21/28556 , H01L21/67069
摘要： A substrate support utilized in high-density plasma chemical vapor deposition (HDP-CVD) processing functions as a radio frequency (RF) electrode (e.g., a bias RF cathode). An upper surface of the substrate support has a central upper surface portion and a peripheral upper surface portion, with the peripheral upper surface portion recessed relative to the central upper surface portion. The upper surface of the support extends beyond an outer edge of the substrate when the substrate is positioned on the substrate support. This extension in the support upper surface may enhance process performance by reducing electric field edge effects, as well as by improving directional distribution of ions traveling to the substrate. Since the peripheral upper surface portion is recessed relative to the central upper surface portion, a detachable shield can be disposed on the peripheral upper surface portion for preventing undesirable deposition on, or chemical attack of, the peripheral upper surface is portion, without interfering with positioning of the substrate.
摘要翻译：用于高密度等离子体化学气相沉积（HDP-CVD）处理的衬底支撑件用作射频（RF）电极（例如，偏压RF阴极）。基板支撑件的上表面具有中心上表面部分和周边上表面部分，周边上表面部分相对于中央上表面部分凹陷。当衬底定位在衬底支撑件上时，支撑件的上表面延伸超过衬底的外边缘。支撑上表面的这种延伸可以通过减小电场边缘效应以及改善行进到基底的离子的方向分布来增强工艺性能。由于外周上表面部分相对于中央上表面部分凹陷，所以可以在外围上表面部分设置可拆卸的屏蔽件，以防止周边上表面部分的不希望的沉积或化学侵蚀，而不会妨碍定位的基底。

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