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1. 发明授权

US06402923B1 Method and apparatus for uniform electroplating of integrated circuits using a variable field shaping element 有权
标题翻译：使用可变场成形元件对集成电路进行均匀电镀的方法和装置
公开(公告)号：US06402923B1
公开(公告)日：2002-06-11
申请号：US09537467
申请日：2000-03-27
申请人： Steven T. Mayer , Richard Hill , Alain Harrus , Evan Patton , Robert Contolini , Steve Taatjes , Jon Reid
发明人： Steven T. Mayer , Richard Hill , Alain Harrus , Evan Patton , Robert Contolini , Steve Taatjes , Jon Reid
IPC分类号： C25D500
CPC分类号： C25D17/08 , C25D7/123 , C25D17/001 , C25D17/008 , C25D17/12 , Y10S204/07
摘要： An electrochemical reactor is used to electrofill damascene architecture for integrated circuits. A shield is used to screen the applied field during electroplating operations to compensate for potential drop along the radius of a wafer. The shield establishes an inverse potential drop in the electrolytic fluid to overcome the resistance of a thin film seed layer of copper on the wafer.
摘要翻译：电化学反应器用于集成电路的大马士革结构。在电镀操作期间使用屏蔽来屏蔽施加的场，以补偿沿着晶片半径的电位降。屏蔽层在电解液中建立反向电位降，以克服晶片上铜的薄膜晶种层的电阻。

2. 发明授权

US06193859B1 Electric potential shaping apparatus for holding a semiconductor wafer during electroplating 失效
标题翻译：电镀期间保持半导体晶片的电位成形装置
公开(公告)号：US06193859B1
公开(公告)日：2001-02-27
申请号：US09074624
申请日：1998-05-07
申请人： Robert J. Contolini , Jonathan Reid , Evan Patton , Jingbin Feng , Steve Taatjes , John Owen Dukovic
发明人： Robert J. Contolini , Jonathan Reid , Evan Patton , Jingbin Feng , Steve Taatjes , John Owen Dukovic
IPC分类号： C25D1700
CPC分类号： C25D7/12 , C25D17/001
摘要： An apparatus for depositing an electrically conductive layer on the surface of a wafer comprises a flange. The flange has a cylindrical wall and an annulus attached to a first end of the cylindrical wall. The annulus shields the edge region of the wafer surface during electroplating reducing the thickness of the deposited electrically conductive layer on the edge region. Further, the cylindrical wall of the flange can be provided with a plurality of apertures adjacent the wafer allowing gas bubbles entrapped on the wafer surface to readily escape.
摘要翻译：用于在晶片表面上沉积导电层的设备包括凸缘。凸缘具有圆柱形壁和连接到圆柱形壁的第一端的环形空间。在电镀过程中，环形屏蔽了晶片表面的边缘区域，从而减小了边缘区域上沉积的导电层的厚度。此外，凸缘的圆柱形壁可以设置有与晶片相邻的多个孔，允许夹在晶片表面上的气泡容易地逸出。

3. 发明授权

US6159354A Electric potential shaping method for electroplating 失效
标题翻译：电镀电位成形方法
公开(公告)号：US6159354A
公开(公告)日：2000-12-12
申请号：US970120
申请日：1997-11-13
申请人： Robert J. Contolini , Jonathan Reid , Evan Patton , Jingbin Feng , Steve Taatjes , John Owen Dukovic
发明人： Robert J. Contolini , Jonathan Reid , Evan Patton , Jingbin Feng , Steve Taatjes , John Owen Dukovic
IPC分类号： C25D7/12 , C25D5/00 , C25D3/38 , C25D5/20 , C25D7/04
CPC分类号： C25D7/12 , C25D17/001
摘要： An apparatus for depositing an electrically conductive layer on the surface of a wafer comprises a flange. The flange has a cylindrical wall and an annulus attached to a first end of the cylindrical wall. The annulus shields the edge region of the wafer surface during electroplating reducing the thickness of the deposited electrically conductive layer on the edge region. Further, the cylindrical wall of the flange can be provided with a plurality of apertures adjacent the wafer allowing gas bubbles entrapped on the wafer surface to readily escape.
摘要翻译：用于在晶片表面上沉积导电层的设备包括凸缘。凸缘具有圆柱形壁和连接到圆柱形壁的第一端的环形空间。在电镀过程中，环形屏蔽了晶片表面的边缘区域，从而减小了边缘区域上沉积的导电层的厚度。此外，凸缘的圆柱形壁可以设置有与晶片相邻的多个孔，允许夹在晶片表面上的气泡容易地逸出。

4. 发明授权

US06309981B1 Edge bevel removal of copper from silicon wafers 有权
标题翻译：从硅晶片去除铜的边缘斜面
公开(公告)号：US06309981B1
公开(公告)日：2001-10-30
申请号：US09557668
申请日：2000-04-25
申请人： Steven T. Mayer , Carl Russo , Evan Patton
发明人： Steven T. Mayer , Carl Russo , Evan Patton
IPC分类号： H01L2100
CPC分类号： H01L21/76877 , C23F1/08 , H01L21/02063 , H01L21/32134 , H01L21/67051 , H01L21/6708
摘要： Chemical etching methods and associated modules for performing the removal of metal from the edge bevel region of a semiconductor wafer are described. The methods and systems apply liquid etchant in a precise manner at the edge bevel region of the wafer under viscous flow conditions, so that the etchant is applied on to the front edge area and flows over the side edge and onto the back edge in a viscous manner. The etchant thus does not flow or splatter onto the active circuit region of the wafer.
摘要翻译：描述了用于从半导体晶片的边缘斜面区域去除金属的化学蚀刻方法和相关模块。这些方法和系统在粘性流动条件下在晶片的边缘斜面区域以精确的方式施加液体腐蚀剂，使得蚀刻剂施加到前边缘区域上并且以粘性流过侧边缘并在后边缘上流动方式。因此，蚀刻剂不会流动或溅射到晶片的有源电路区域。

5. 发明授权

US4876214A Method for fabricating an isolation region in a semiconductor substrate 失效
标题翻译：在半导体衬底中制造隔离区域的方法
公开(公告)号：US4876214A
公开(公告)日：1989-10-24
申请号：US201491
申请日：1988-06-02
申请人： Tadanori Yamaguchi , Evan Patton , Eric Lane , Simon Yu
发明人： Tadanori Yamaguchi , Evan Patton , Eric Lane , Simon Yu
IPC分类号： H01L21/3213 , H01L21/763
CPC分类号： H01L21/32137 , H01L21/763
摘要： An isolation region is fabricated in a silicon substrate by first forming a silicon dioxide insulating layer on the substrate. A silicon nitride mask layer and an oxide layer are then deposited on the insulating layer. The oxide, mask and insulating layers and the substrate are etched to form a trench in the substrate. A channel stopper is implanted in substrate below the trench and the oxide layer is then stripped. Thereafter, the trench surface is oxidized to extend the insulating layer into the trench. Next, the trench is partially filled with polysilicon material, the surface of which is initially oxidized to extend the insulating layer over the trench. The mask layer is etched back to expose portions of the insulating layer adjacent the trench. The upper surface of the polysilicon material in the trench and portions of the substrate beneath exposed portions of the insulating layer are further oxidized to thicken the insulating layer over the trench.
摘要翻译：通过首先在衬底上形成二氧化硅绝缘层，在硅衬底中制造隔离区。然后在绝缘层上沉积氮化硅掩模层和氧化物层。蚀刻氧化物，掩模和绝缘层以及衬底，以在衬底中形成沟槽。通道阻挡件植入在沟槽下方的衬底中，然后剥离氧化物层。此后，沟槽表面被氧化以将绝缘层延伸到沟槽中。接下来，沟槽部分地填充有多晶硅材料，其表面最初被氧化以在沟槽上延伸绝缘层。掩模层被回蚀以暴露与沟槽相邻的绝缘层的部分。沟槽中的多晶硅材料的上表面和绝缘层暴露部分下方的衬底部分被进一步氧化，以使沟槽上的绝缘层变厚。

6. 外观设计

USD672010S1 Adjustable chemical vapor deposition showerhead assembly 有权
标题翻译：可调式化学气相沉积喷头组件
公开(公告)号：USD672010S1
公开(公告)日：2012-12-04
申请号：US29416016
申请日：2012-03-16
申请人： Percival Verdeflor , Alan Popiolkowski , Evan Patton
设计人： Percival Verdeflor , Alan Popiolkowski , Evan Patton

7. 发明申请

US20050282371A1 Sequential station tool for wet processing of semiconductor wafers 失效
标题翻译：用于半导体晶圆湿法处理的顺序工具
公开(公告)号：US20050282371A1
公开(公告)日：2005-12-22
申请号：US10693223
申请日：2003-10-24
申请人： Evan Patton , Theodore Cacouris , Eliot Broadbent , Steven Mayer
发明人： Evan Patton , Theodore Cacouris , Eliot Broadbent , Steven Mayer
IPC分类号： C25D3/38 , C25D5/10 , H01L21/00 , H01L21/288 , H01L21/44 , H01L21/677
CPC分类号： C25D17/001 , C25D3/38 , C25D5/10 , H01L21/2885 , H01L21/67161 , H01L21/6719 , H01L21/6723 , H01L21/67751 , H01L21/76877 , Y10T29/41
摘要： Methods and apparatus are provided for processing semiconductor wafers sequentially. Sequential processes employ multi-station processing modules, where particular encompassing wafer processes are divided into sub-processes, each optimized for increasing wafer to wafer uniformity, result quality, and overall wafer throughput. In one example, a copper electroplating module includes separate stations for wetting, initiation, seed layer repair, fill, overburden, reclaim, and rinse.
摘要翻译：提供了顺序处理半导体晶片的方法和装置。顺序过程采用多工位处理模块，其中特别包含的晶片工艺被分为子工艺，每个子工艺被优化用于增加晶圆到晶片的均匀性，结果质量和整个晶片生产量。在一个示例中，铜电镀模块包括用于润湿，起始，种子层修复，填充，覆盖层，回收和冲洗的分离站。

8. 发明申请

US20060169977A1 Liquid detection end effector sensor and method of using the same 有权
标题翻译：液体检测末端执行器传感器及其使用方法
公开(公告)号：US20060169977A1
公开(公告)日：2006-08-03
申请号：US11371650
申请日：2006-03-09
申请人： Won Lee , Evan Patton
发明人： Won Lee , Evan Patton
IPC分类号： H01L23/58 , H01L21/66
CPC分类号： H01L21/67742 , H01L21/67288 , Y10S414/135
摘要： Liquid detection sensors are attached to both sides of a robotic arm end effector of a semiconductor wafer process system. The sensor mechanism or probe is situated on the front side and backside of the end effector, designed with electrical lines that are traced onto a polyester base material. The electrical lines are positioned in a serpentine formation. The high conductance of the sulfuric acid in the copper sulfate solution acts as the conductor between the traced lines. When the conductive liquid comes in contact with the traced lines, the lines short and the sensor activates or turns on.
摘要翻译：液体检测传感器连接到半导体晶片处理系统的机器人臂端部执行器的两侧。传感器机构或探头位于末端执行器的前侧和后侧，设计有跟踪在聚酯基材上的电线。电线定位在蛇形结构中。硫酸铜溶液中硫酸的高电导作用在跟踪线之间的导体。当导电液体与跟踪线接触时，线路短路，传感器激活或打开。

9. 发明申请

US20060011483A1 Process for electroplating metals into microscopic recessed features 有权
标题翻译：将金属电镀成微观凹陷特征的工艺
公开(公告)号：US20060011483A1
公开(公告)日：2006-01-19
申请号：US11228712
申请日：2005-09-16
申请人： Steven Mayer , Vijay Bhaskaran , Evan Patton , Robert Jackson , Jonathan Reid
发明人： Steven Mayer , Vijay Bhaskaran , Evan Patton , Robert Jackson , Jonathan Reid
IPC分类号： C25D5/02
CPC分类号： C25D3/02 , C25D3/38 , C25D5/022 , C25D5/18 , H01L21/2885 , H01L21/76877 , H05K3/423
摘要： Several techniques are described for reducing or mitigating the formation of seams and/or voids in electroplating the interior regions of microscopic recessed features. Cathodic polarization is used to mitigate the deleterious effects of introducing a substrate plated with a seed layer into an electroplating solution. Also described are diffusion-controlled electroplating techniques to provide for bottom-up filling of trenches and vias, avoiding thereby sidewalls growing together to create seams/voids. A preliminary plating step is also described that plates a thin film of conductor on the interior surfaces of features leading to adequate electrical conductivity to the feature bottom, facilitating bottom-up filling.
摘要翻译：描述了几种用于减少或减轻在电镀微观凹陷特征的内部区域中的接缝和/或空隙的形成的技术。阴极极化用于减轻将电镀有种子层的基板引入电镀溶液中的有害影响。还描述了扩散控制的电镀技术，以提供沟槽和通孔的自下而上的填充，从而避免由此侧壁一起生长以产生接缝/空隙。还描述了初步电镀步骤，在特征的内表面上镀覆导电薄膜，导致特征底部具有足够的导电性，便于自底向上填充。

10. 发明授权

US06471845B1 Method of controlling chemical bath composition in a manufacturing environment 有权
标题翻译：在制造环境中控制化学浴组成的方法
公开(公告)号：US06471845B1
公开(公告)日：2002-10-29
申请号：US09461849
申请日：1999-12-15
申请人： John O. Dukovic , William E. Corbin, Jr. , Erick G. Walton , Peter S. Locke , Panayotis C. Andricacos , James E. Fluegel , Evan Patton , Jonathan Reid
发明人： John O. Dukovic , William E. Corbin, Jr. , Erick G. Walton , Peter S. Locke , Panayotis C. Andricacos , James E. Fluegel , Evan Patton , Jonathan Reid
IPC分类号： C25D2112
CPC分类号： C25D21/12 , Y10T137/2509
摘要： A method for controlling the composition of a chemical bath in which predictive dosing is used to account for changes in the composition of the bath in which the operating characteristics of the process are partitioned into a plurality of operating modes and the consumption or generation of materials related to the process are determined empirically and additions of material are made as appropriate.
摘要翻译：用于控制化学浴的组成的方法，其中使用预测剂量来解释浴的组成的变化，其中过程的操作特性被划分为多种操作模式以及相关材料的消耗或产生根据经验确定该过程，并酌情添加材料。

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