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1. 发明授权

US4876214A Method for fabricating an isolation region in a semiconductor substrate 失效
标题翻译：在半导体衬底中制造隔离区域的方法
公开(公告)号：US4876214A
公开(公告)日：1989-10-24
申请号：US201491
申请日：1988-06-02
申请人： Tadanori Yamaguchi , Evan Patton , Eric Lane , Simon Yu
发明人： Tadanori Yamaguchi , Evan Patton , Eric Lane , Simon Yu
IPC分类号： H01L21/3213 , H01L21/763
CPC分类号： H01L21/32137 , H01L21/763
摘要： An isolation region is fabricated in a silicon substrate by first forming a silicon dioxide insulating layer on the substrate. A silicon nitride mask layer and an oxide layer are then deposited on the insulating layer. The oxide, mask and insulating layers and the substrate are etched to form a trench in the substrate. A channel stopper is implanted in substrate below the trench and the oxide layer is then stripped. Thereafter, the trench surface is oxidized to extend the insulating layer into the trench. Next, the trench is partially filled with polysilicon material, the surface of which is initially oxidized to extend the insulating layer over the trench. The mask layer is etched back to expose portions of the insulating layer adjacent the trench. The upper surface of the polysilicon material in the trench and portions of the substrate beneath exposed portions of the insulating layer are further oxidized to thicken the insulating layer over the trench.
摘要翻译：通过首先在衬底上形成二氧化硅绝缘层，在硅衬底中制造隔离区。然后在绝缘层上沉积氮化硅掩模层和氧化物层。蚀刻氧化物，掩模和绝缘层以及衬底，以在衬底中形成沟槽。通道阻挡件植入在沟槽下方的衬底中，然后剥离氧化物层。此后，沟槽表面被氧化以将绝缘层延伸到沟槽中。接下来，沟槽部分地填充有多晶硅材料，其表面最初被氧化以在沟槽上延伸绝缘层。掩模层被回蚀以暴露与沟槽相邻的绝缘层的部分。沟槽中的多晶硅材料的上表面和绝缘层暴露部分下方的衬底部分被进一步氧化，以使沟槽上的绝缘层变厚。

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