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1. 发明授权

US08540857B1 Plating method and apparatus with multiple internally irrigated chambers 有权
标题翻译：具有多个内部灌溉室的电镀方法和装置
公开(公告)号：US08540857B1
公开(公告)日：2013-09-24
申请号：US13571199
申请日：2012-08-09
申请人： Steven Mayer , Shantinath Ghongadi , Kousik Ganesan , Zhian He , Jingbin Feng
发明人： Steven Mayer , Shantinath Ghongadi , Kousik Ganesan , Zhian He , Jingbin Feng
IPC分类号： C25B9/00 , C25D17/00 , C25D7/12
CPC分类号： C25D17/001 , C25D5/08 , C25D17/002 , C25D17/008
摘要： An apparatus for electroplating a layer of metal onto a work piece surface includes a membrane separating the chamber of the apparatus into a catholyte chamber and an anolyte chamber. In the catholyte chamber is a catholyte manifold region that includes a catholyte manifold and at least one flow distribution tube. The catholyte manifold and at least one flow distribution tube serve to mix and direct catholyte flow in the catholyte chamber. The provided configuration effectively reduces failure and improves the operational ranges of the apparatus.
摘要翻译：用于将金属层电镀到工件表面上的装置包括将装置的室分离成阴极电解液室和阳极电解液室的膜。在阴极电解液室中是阴极电解液歧管区域，其包括阴极电解液歧管和至少一个流量分布管。阴极电解液歧管和至少一个分流管用于混合和引导阴极电解液在阴极电解液室中的流动。所提供的配置有效地减少故障并改善设备的操作范围。

2. 发明授权

US08262871B1 Plating method and apparatus with multiple internally irrigated chambers 有权
标题翻译：具有多个内部灌溉室的电镀方法和装置
公开(公告)号：US08262871B1
公开(公告)日：2012-09-11
申请号：US12640992
申请日：2009-12-17
申请人： Steven T. Mayer , Shantinath Ghongadi , Kousik Ganesan , Zhian He , Jingbin Feng
发明人： Steven T. Mayer , Shantinath Ghongadi , Kousik Ganesan , Zhian He , Jingbin Feng
IPC分类号： C25B9/00 , C25D17/00
CPC分类号： C25D17/001 , C25D5/08 , C25D17/002 , C25D17/008
摘要： An apparatus for electroplating a layer of metal onto a work piece surface includes a membrane separating the chamber of the apparatus into a catholyte chamber and an anolyte chamber. In the catholyte chamber is a catholyte manifold region that includes a catholyte manifold and at least one flow distribution tube. The catholyte manifold and at least one flow distribution tube serve to mix and direct catholyte flow in the catholyte chamber. The provided configuration effectively reduces failure and improves the operational ranges of the apparatus.
摘要翻译：用于将金属层电镀到工件表面上的装置包括将装置的室分离成阴极电解液室和阳极电解液室的膜。在阴极电解液室中是阴极电解液歧管区域，其包括阴极电解液歧管和至少一个流量分布管。阴极电解液歧管和至少一个分流管用于混合和引导阴极电解液在阴极电解液室中的流动。所提供的配置有效地减少故障并改善设备的操作范围。

3. 发明授权

US08172992B2 Wafer electroplating apparatus for reducing edge defects 有权
标题翻译：用于减少边缘缺陷的晶圆电镀设备
公开(公告)号：US08172992B2
公开(公告)日：2012-05-08
申请号：US12633219
申请日：2009-12-08
申请人： Vinay Prabhakar , Bryan L. Buckalew , Kousik Ganesan , Shantinath Ghongadi , Zhian He , Steven T. Mayer , Robert Rash , Jonathan D. Reid , Yuichi Takada , James R. Zibrida
发明人： Vinay Prabhakar , Bryan L. Buckalew , Kousik Ganesan , Shantinath Ghongadi , Zhian He , Steven T. Mayer , Robert Rash , Jonathan D. Reid , Yuichi Takada , James R. Zibrida
IPC分类号： C25B9/02
CPC分类号： C25D17/001 , C25D7/123
摘要： Methods, apparatuses, and various apparatus components, such as base plates, lipseals, and contact ring assemblies are provided for reducing contamination of the contact area in the apparatuses. Contamination may happen during removal of semiconductor wafers from apparatuses after the electroplating process. In certain embodiments, a base plate with a hydrophobic coating, such as polyamide-imide (PAI) and sometimes polytetrafluoroethylene (PTFE), are used. Further, contact tips of the contact ring assembly may be positioned further away from the sealing lip of the lipseal. In certain embodiments, a portion of the contact ring assembly and/or the lipseal also include hydrophobic coatings.
摘要翻译：提供了诸如基板，密封圈和接触环组件的方法，装置和各种装置部件，以减少设备中接触区域的污染。在电镀工艺之后从设备中取出半导体晶片时可能发生污染。在某些实施方案中，使用具有疏水涂层的基板，例如聚酰胺 - 酰亚胺（PAI）和有时聚四氟乙烯（PTFE）。此外，接触环组件的接触尖端可以被定位成更远离唇密封的唇缘。在某些实施方案中，接触环组件和/或唇膏的一部分还包括疏水性涂层。

4. 发明授权

US08377268B2 Electroplating cup assembly 有权
标题翻译：电镀杯组装
公开(公告)号：US08377268B2
公开(公告)日：2013-02-19
申请号：US13154224
申请日：2011-06-06
申请人： Robert Rash , Shantinath Ghongadi , Kousik Ganesan , Zhian He , Tariq Majid , Jeff Hawkins , Seshasayee Varadarajan , Bryan Buckalew
发明人： Robert Rash , Shantinath Ghongadi , Kousik Ganesan , Zhian He , Tariq Majid , Jeff Hawkins , Seshasayee Varadarajan , Bryan Buckalew
IPC分类号： C25D17/06 , C25D7/12
CPC分类号： C25D17/001 , C25D7/123 , C25D17/02
摘要： Embodiments of a closed-contact electroplating cup are disclosed. One embodiment comprises a cup bottom comprising an opening, and a seal disposed on the cup bottom around the opening. The seal comprises a wafer-contacting peak located substantially at an inner edge of the seal. The embodiment also comprises an electrical contact structure disposed over a portion of the seal, wherein the electrical contact structure comprises an outer ring and a plurality of contacts extending inwardly from the outer ring, and wherein each contact has a generally flat wafer-contacting surface. The embodiment further comprises a wafer-centering mechanism configured to center a wafer in the cup.
摘要翻译：公开了一种闭式电镀杯的实施例。一个实施例包括一个包括一个开口的杯底，以及一个围绕开口设置在杯底的密封件。密封件包括基本上位于密封件的内边缘处的与晶片接触的峰。该实施例还包括设置在密封件的一部分上的电接触结构，其中电接触结构包括外环和从外环向内延伸的多个触点，并且其中每个触头具有大致平坦的晶片接触表面。该实施例还包括晶圆定心机构，其配置成使晶片位于杯中心。

5. 发明申请

US20120181170A1 WAFER ELECTROPLATING APPARATUS FOR REDUCING EDGE DEFECTS 审中-公开
标题翻译：用于减少边缘缺陷的WAFER电镀设备
公开(公告)号：US20120181170A1
公开(公告)日：2012-07-19
申请号：US13432767
申请日：2012-03-28
申请人： Vinay Prabhakar , Bryan L. Buckalew , Kousik Ganesan , Shantinath Ghongadi , Zhian He , Steven T. Mayer , Robert Rash , Jonathan D. Reid , Yuichi Takada , James R. Zibrida
发明人： Vinay Prabhakar , Bryan L. Buckalew , Kousik Ganesan , Shantinath Ghongadi , Zhian He , Steven T. Mayer , Robert Rash , Jonathan D. Reid , Yuichi Takada , James R. Zibrida
IPC分类号： C25D17/08
CPC分类号： C25D17/001 , C25D7/123
摘要： Methods, apparatuses, and various apparatus components, such as base plates, lipseals, and contact ring assemblies are provided for reducing contamination of the contact area in the apparatuses. Contamination may happen during removal of semiconductor wafers from apparatuses after the electroplating process. In certain embodiments, a base plate with a hydrophobic coating, such as polyamide-imide (PAI) and sometimes polytetrafluoroethylene (PTFE), are used. Further, contact tips of the contact ring assembly may be positioned further away from the sealing lip of the lipseal. In certain embodiments, a portion of the contact ring assembly and/or the lipseal also include hydrophobic coatings.
摘要翻译：提供了诸如基板，密封圈和接触环组件的方法，装置和各种装置部件，以减少设备中接触区域的污染。在电镀工艺之后从设备中取出半导体晶片时可能发生污染。在某些实施方案中，使用具有疏水涂层的基板，例如聚酰胺 - 酰亚胺（PAI）和有时聚四氟乙烯（PTFE）。此外，接触环组件的接触尖端可以被定位成更远离唇密封的唇缘。在某些实施方案中，接触环组件和/或唇膏的一部分还包括疏水性涂层。

6. 发明授权

US07985325B2 Closed contact electroplating cup assembly 有权
标题翻译：闭合电镀杯组装
公开(公告)号：US07985325B2
公开(公告)日：2011-07-26
申请号：US11929638
申请日：2007-10-30
申请人： Robert Rash , Shantinath Ghongadi , Kousik Ganesan , Zhian He , Tariq Majid , Jeff Hawkins , Seshasayee Varadarajan , Bryan Buckalew
发明人： Robert Rash , Shantinath Ghongadi , Kousik Ganesan , Zhian He , Tariq Majid , Jeff Hawkins , Seshasayee Varadarajan , Bryan Buckalew
IPC分类号： C25D17/06
CPC分类号： C25D17/001 , C25D7/123 , C25D17/02
摘要： Embodiments of a closed-contact electroplating cup are disclosed. One embodiment comprises a cup bottom comprising an opening, and a seal disposed on the cup bottom around the opening. The seal comprises a wafer-contacting peak located substantially at an inner edge of the seal. The embodiment also comprises an electrical contact structure disposed over a portion of the seal, wherein the electrical contact structure comprises an outer ring and a plurality of contacts extending inwardly from the outer ring, and wherein each contact has a generally flat wafer-contacting surface. The embodiment further comprises a wafer-centering mechanism configured to center a wafer in the cup.
摘要翻译：公开了一种闭式电镀杯的实施例。一个实施例包括一个包括一个开口的杯底，以及一个围绕开口设置在杯底的密封件。密封件包括基本上位于密封件的内边缘处的与晶片接触的峰。该实施例还包括设置在密封件的一部分上的电接触结构，其中电接触结构包括外环和从外环向内延伸的多个触点，并且其中每个触头具有大致平坦的晶片接触表面。该实施例还包括晶圆定心机构，其配置成使晶片位于杯中心。

7. 发明申请

US20100155254A1 WAFER ELECTROPLATING APPARATUS FOR REDUCING EDGE DEFECTS 有权
标题翻译：用于减少边缘缺陷的WAFER电镀设备
公开(公告)号：US20100155254A1
公开(公告)日：2010-06-24
申请号：US12633219
申请日：2009-12-08
申请人： Vinay Prabhakar , Bryan L. Buckalew , Kousik Ganesan , Shantinath Ghongadi , Zhian He , Steven T. Mayer , Robert Rash , Jonathan D. Reid , Yuichi Takada , James R. Zibrida
发明人： Vinay Prabhakar , Bryan L. Buckalew , Kousik Ganesan , Shantinath Ghongadi , Zhian He , Steven T. Mayer , Robert Rash , Jonathan D. Reid , Yuichi Takada , James R. Zibrida
IPC分类号： C25D7/12 , C25D17/00 , C25D17/02
CPC分类号： C25D17/001 , C25D7/123
摘要： Methods, apparatuses, and various apparatus components, such as base plates, lipseals, and contact ring assemblies are provided for reducing contamination of the contact area in the apparatuses. Contamination may happen during removal of semiconductor wafers from apparatuses after the electroplating process. In certain embodiments, a base plate with a hydrophobic coating, such as polyamide-imide (PAI) and sometimes polytetrafluoroethylene (PTFE), are used. Further, contact tips of the contact ring assembly may be positioned further away from the sealing lip of the lipseal. In certain embodiments, a portion of the contact ring assembly and/or the lipseal also include hydrophobic coatings.
摘要翻译：提供了诸如基板，密封圈和接触环组件的方法，装置和各种装置部件，以减少设备中接触区域的污染。在电镀工艺之后从设备中取出半导体晶片时可能发生污染。在某些实施方案中，使用具有疏水涂层的基板，例如聚酰胺 - 酰亚胺（PAI）和有时聚四氟乙烯（PTFE）。此外，接触环组件的接触尖端可以被定位成更远离唇密封的唇缘。在某些实施方案中，接触环组件和/或唇膏的一部分还包括疏水性涂层。

8. 发明申请

US20110233056A1 ELECTROPLATING CUP ASSEMBLY 有权
标题翻译：电镀杯组装
公开(公告)号：US20110233056A1
公开(公告)日：2011-09-29
申请号：US13154224
申请日：2011-06-06
申请人： Robert Rash , Shantinath Ghongadi , Kousik Ganesan , Zhian He , Tariq Majid , Jeff Hawkins , Seshasayee Varadarajan , Bryan Buckalew
发明人： Robert Rash , Shantinath Ghongadi , Kousik Ganesan , Zhian He , Tariq Majid , Jeff Hawkins , Seshasayee Varadarajan , Bryan Buckalew
IPC分类号： C25D17/06 , F16J15/02
CPC分类号： C25D17/001 , C25D7/123 , C25D17/02
摘要： Embodiments of a closed-contact electroplating cup are disclosed. One embodiment comprises a cup bottom comprising an opening, and a seal disposed on the cup bottom around the opening. The seal comprises a wafer-contacting peak located substantially at an inner edge of the seal. The embodiment also comprises an electrical contact structure disposed over a portion of the seal, wherein the electrical contact structure comprises an outer ring and a plurality of contacts extending inwardly from the outer ring, and wherein each contact has a generally flat wafer-contacting surface. The embodiment further comprises a wafer-centering mechanism configured to center a wafer in the cup.
摘要翻译：公开了一种闭式电镀杯的实施例。一个实施例包括一个包括一个开口的杯底，以及一个围绕开口设置在杯底的密封件。密封件包括基本上位于密封件的内边缘处的与晶片接触的峰。该实施例还包括设置在密封件的一部分上的电接触结构，其中电接触结构包括外环和从外环向内延伸的多个触点，并且其中每个触头具有大致平坦的晶片接触表面。该实施例还包括晶圆定心机构，其配置成使晶片位于杯中心。

9. 发明申请

US20090107836A1 Closed Contact Electroplating Cup Assembly 有权
标题翻译：闭合式电镀杯组装
公开(公告)号：US20090107836A1
公开(公告)日：2009-04-30
申请号：US11929638
申请日：2007-10-30
申请人： Robert Rash , Shantinath Ghongadi , Kousik Ganesan , Zhian He , Tariq Majid , Jeff Hawkins , Seshasayee Varadarajan , Bryan Buckalew
发明人： Robert Rash , Shantinath Ghongadi , Kousik Ganesan , Zhian He , Tariq Majid , Jeff Hawkins , Seshasayee Varadarajan , Bryan Buckalew
IPC分类号： C25D17/06 , F16J15/34
CPC分类号： C25D17/001 , C25D7/123 , C25D17/02
摘要： Embodiments of a closed-contact electroplating cup are disclosed. One embodiment comprises a cup bottom comprising an opening, and a seal disposed on the cup bottom around the opening. The seal comprises a wafer-contacting peak located substantially at an inner edge of the seal. The embodiment also comprises an electrical contact structure disposed over a portion of the seal, wherein the electrical contact structure comprises an outer ring and a plurality of contacts extending inwardly from the outer ring, and wherein each contact has a generally flat wafer-contacting surface. The embodiment further comprises a wafer-centering mechanism configured to center a wafer in the cup.
摘要翻译：公开了一种闭式电镀杯的实施例。一个实施例包括一个包括一个开口的杯底，以及一个围绕开口设置在杯底的密封件。密封件包括基本上位于密封件的内边缘处的与晶片接触的峰。该实施例还包括设置在密封件的一部分上的电接触结构，其中电接触结构包括外环和从外环向内延伸的多个接触件，并且其中每个接触件具有大致平坦的晶片接触表面。该实施例还包括晶圆定心机构，其配置成使晶片位于杯中心。

10. 发明授权

US09512538B2 Plating cup with contoured cup bottom 有权
标题翻译：电镀杯具有轮廓的杯底
公开(公告)号：US09512538B2
公开(公告)日：2016-12-06
申请号：US13609037
申请日：2012-09-10
申请人： Zhian He , Jingbin Feng , Shantinath Ghongadi , Frederick D. Wilmot
发明人： Zhian He , Jingbin Feng , Shantinath Ghongadi , Frederick D. Wilmot
IPC分类号： C25D17/00 , C25D17/06 , C25D17/12 , C25D7/12
CPC分类号： C25D17/06 , C25D7/12 , C25D17/001 , C25D17/004 , C25D17/005 , C25D17/007 , C25D17/12
摘要： Disclosed herein are cups for engaging wafers during electroplating in clamshell assemblies and supplying electrical current to the wafers during electroplating. The cup can comprise an elastomeric seal disposed on the cup and configured to engage the wafer during electroplating, where upon engagement the elastomeric seal substantially excludes plating solution from a peripheral region of the wafer, and where the elastomeric seal and the cup are annular in shape, and comprise one or more contact elements for supplying electrical current to the wafer during electroplating, the one or more contact elements attached to and extending inwardly towards a center of the cup from a metal strip disposed over the elastomeric seal. A notch area of the cup can have a protrusion or an insulated portion on a portion of a bottom surface of the cup where the notch area is aligned with a notch in the wafer.
摘要翻译：这里公开了用于在电镀期间在蛤壳式组件中接合晶片并在电镀期间向晶片供应电流的杯子。杯子可以包括设置在杯子上并被配置为在电镀期间接合晶片的弹性体密封件，其中在接合时，弹性体密封件基本上排除来自晶片的周边区域的电镀溶液，并且其中弹性体密封件和杯子是环形的并且包括用于在电镀期间向晶片供应电流的一个或多个接触元件，所述一个或多个接触元件从设置在弹性体密封件上方的金属条附接到杯的中心并向内延伸。杯的切口区域可以在杯的底表面的一部分上具有突起或绝缘部分，其中凹口区域与晶片中的凹口对准。

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