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1. 发明授权

US08172992B2 Wafer electroplating apparatus for reducing edge defects 有权
标题翻译：用于减少边缘缺陷的晶圆电镀设备
公开(公告)号：US08172992B2
公开(公告)日：2012-05-08
申请号：US12633219
申请日：2009-12-08
申请人： Vinay Prabhakar , Bryan L. Buckalew , Kousik Ganesan , Shantinath Ghongadi , Zhian He , Steven T. Mayer , Robert Rash , Jonathan D. Reid , Yuichi Takada , James R. Zibrida
发明人： Vinay Prabhakar , Bryan L. Buckalew , Kousik Ganesan , Shantinath Ghongadi , Zhian He , Steven T. Mayer , Robert Rash , Jonathan D. Reid , Yuichi Takada , James R. Zibrida
IPC分类号： C25B9/02
CPC分类号： C25D17/001 , C25D7/123
摘要： Methods, apparatuses, and various apparatus components, such as base plates, lipseals, and contact ring assemblies are provided for reducing contamination of the contact area in the apparatuses. Contamination may happen during removal of semiconductor wafers from apparatuses after the electroplating process. In certain embodiments, a base plate with a hydrophobic coating, such as polyamide-imide (PAI) and sometimes polytetrafluoroethylene (PTFE), are used. Further, contact tips of the contact ring assembly may be positioned further away from the sealing lip of the lipseal. In certain embodiments, a portion of the contact ring assembly and/or the lipseal also include hydrophobic coatings.
摘要翻译：提供了诸如基板，密封圈和接触环组件的方法，装置和各种装置部件，以减少设备中接触区域的污染。在电镀工艺之后从设备中取出半导体晶片时可能发生污染。在某些实施方案中，使用具有疏水涂层的基板，例如聚酰胺 - 酰亚胺（PAI）和有时聚四氟乙烯（PTFE）。此外，接触环组件的接触尖端可以被定位成更远离唇密封的唇缘。在某些实施方案中，接触环组件和/或唇膏的一部分还包括疏水性涂层。

2. 发明申请

US20120181170A1 WAFER ELECTROPLATING APPARATUS FOR REDUCING EDGE DEFECTS 审中-公开
标题翻译：用于减少边缘缺陷的WAFER电镀设备
公开(公告)号：US20120181170A1
公开(公告)日：2012-07-19
申请号：US13432767
申请日：2012-03-28
申请人： Vinay Prabhakar , Bryan L. Buckalew , Kousik Ganesan , Shantinath Ghongadi , Zhian He , Steven T. Mayer , Robert Rash , Jonathan D. Reid , Yuichi Takada , James R. Zibrida
发明人： Vinay Prabhakar , Bryan L. Buckalew , Kousik Ganesan , Shantinath Ghongadi , Zhian He , Steven T. Mayer , Robert Rash , Jonathan D. Reid , Yuichi Takada , James R. Zibrida
IPC分类号： C25D17/08
CPC分类号： C25D17/001 , C25D7/123
摘要： Methods, apparatuses, and various apparatus components, such as base plates, lipseals, and contact ring assemblies are provided for reducing contamination of the contact area in the apparatuses. Contamination may happen during removal of semiconductor wafers from apparatuses after the electroplating process. In certain embodiments, a base plate with a hydrophobic coating, such as polyamide-imide (PAI) and sometimes polytetrafluoroethylene (PTFE), are used. Further, contact tips of the contact ring assembly may be positioned further away from the sealing lip of the lipseal. In certain embodiments, a portion of the contact ring assembly and/or the lipseal also include hydrophobic coatings.
摘要翻译：提供了诸如基板，密封圈和接触环组件的方法，装置和各种装置部件，以减少设备中接触区域的污染。在电镀工艺之后从设备中取出半导体晶片时可能发生污染。在某些实施方案中，使用具有疏水涂层的基板，例如聚酰胺 - 酰亚胺（PAI）和有时聚四氟乙烯（PTFE）。此外，接触环组件的接触尖端可以被定位成更远离唇密封的唇缘。在某些实施方案中，接触环组件和/或唇膏的一部分还包括疏水性涂层。

3. 发明申请

US20100155254A1 WAFER ELECTROPLATING APPARATUS FOR REDUCING EDGE DEFECTS 有权
标题翻译：用于减少边缘缺陷的WAFER电镀设备
公开(公告)号：US20100155254A1
公开(公告)日：2010-06-24
申请号：US12633219
申请日：2009-12-08
申请人： Vinay Prabhakar , Bryan L. Buckalew , Kousik Ganesan , Shantinath Ghongadi , Zhian He , Steven T. Mayer , Robert Rash , Jonathan D. Reid , Yuichi Takada , James R. Zibrida
发明人： Vinay Prabhakar , Bryan L. Buckalew , Kousik Ganesan , Shantinath Ghongadi , Zhian He , Steven T. Mayer , Robert Rash , Jonathan D. Reid , Yuichi Takada , James R. Zibrida
IPC分类号： C25D7/12 , C25D17/00 , C25D17/02
CPC分类号： C25D17/001 , C25D7/123
摘要： Methods, apparatuses, and various apparatus components, such as base plates, lipseals, and contact ring assemblies are provided for reducing contamination of the contact area in the apparatuses. Contamination may happen during removal of semiconductor wafers from apparatuses after the electroplating process. In certain embodiments, a base plate with a hydrophobic coating, such as polyamide-imide (PAI) and sometimes polytetrafluoroethylene (PTFE), are used. Further, contact tips of the contact ring assembly may be positioned further away from the sealing lip of the lipseal. In certain embodiments, a portion of the contact ring assembly and/or the lipseal also include hydrophobic coatings.
摘要翻译：提供了诸如基板，密封圈和接触环组件的方法，装置和各种装置部件，以减少设备中接触区域的污染。在电镀工艺之后从设备中取出半导体晶片时可能发生污染。在某些实施方案中，使用具有疏水涂层的基板，例如聚酰胺 - 酰亚胺（PAI）和有时聚四氟乙烯（PTFE）。此外，接触环组件的接触尖端可以被定位成更远离唇密封的唇缘。在某些实施方案中，接触环组件和/或唇膏的一部分还包括疏水性涂层。

4. 发明授权

US08262871B1 Plating method and apparatus with multiple internally irrigated chambers 有权
标题翻译：具有多个内部灌溉室的电镀方法和装置
公开(公告)号：US08262871B1
公开(公告)日：2012-09-11
申请号：US12640992
申请日：2009-12-17
申请人： Steven T. Mayer , Shantinath Ghongadi , Kousik Ganesan , Zhian He , Jingbin Feng
发明人： Steven T. Mayer , Shantinath Ghongadi , Kousik Ganesan , Zhian He , Jingbin Feng
IPC分类号： C25B9/00 , C25D17/00
CPC分类号： C25D17/001 , C25D5/08 , C25D17/002 , C25D17/008
摘要： An apparatus for electroplating a layer of metal onto a work piece surface includes a membrane separating the chamber of the apparatus into a catholyte chamber and an anolyte chamber. In the catholyte chamber is a catholyte manifold region that includes a catholyte manifold and at least one flow distribution tube. The catholyte manifold and at least one flow distribution tube serve to mix and direct catholyte flow in the catholyte chamber. The provided configuration effectively reduces failure and improves the operational ranges of the apparatus.
摘要翻译：用于将金属层电镀到工件表面上的装置包括将装置的室分离成阴极电解液室和阳极电解液室的膜。在阴极电解液室中是阴极电解液歧管区域，其包括阴极电解液歧管和至少一个流量分布管。阴极电解液歧管和至少一个分流管用于混合和引导阴极电解液在阴极电解液室中的流动。所提供的配置有效地减少故障并改善设备的操作范围。

5. 发明申请

US20130284604A1 METHOD AND APPARATUS FOR ELECTROPLATING SEMICONDUCTOR WAFER WHEN CONTROLLING CATIONS IN ELECTROLYTE 有权
标题翻译：电解槽控制电镀半导体波形的方法与装置
公开(公告)号：US20130284604A1
公开(公告)日：2013-10-31
申请号：US13869891
申请日：2013-04-24
申请人： Tighe A. Spurlin , Charles L. Merrill , Ludan Huang , Matthew Thorum , Lee Brogan , James E. Duncan , Frederick D. Wilmot , Marshall R. Stowell , Steven T. Mayer , Haiying Fu , David W. Porter , Shantinath Ghongadi , Jonathan D. Reid , Hyosang S. Lee , Mark J. Willey
发明人： Tighe A. Spurlin , Charles L. Merrill , Ludan Huang , Matthew Thorum , Lee Brogan , James E. Duncan , Frederick D. Wilmot , Marshall R. Stowell , Steven T. Mayer , Haiying Fu , David W. Porter , Shantinath Ghongadi , Jonathan D. Reid , Hyosang S. Lee , Mark J. Willey
IPC分类号： C25D21/14 , C25D17/00 , C25D3/38
CPC分类号： C25D21/14 , C25D3/38 , C25D17/001 , C25D17/002 , C25D21/12 , C25D21/18
摘要： Apparatus and methods for electroplating metal onto substrates are disclosed. The electroplating apparatus comprise an electroplating cell and at least one oxidization device. The electroplating cell comprises a cathode chamber and an anode chamber separated by a porous barrier that allows metal cations to pass through but prevents organic particles from crossing. The oxidation device (ODD) is configured to oxidize cations of the metal to be electroplated onto the substrate, which cations are present in the anolyte during electroplating. In some embodiments, the ODD is implemented as a carbon anode that removes Cu(I) from the anolyte electrochemically. In other embodiments, the ODD is implemented as an oxygenation device (OGD) or an impressed current cathodic protection anode (ICCP anode), both of which increase oxygen concentration in anolyte solutions. Methods for efficient electroplating are also disclosed.
摘要翻译：公开了将金属电镀到基底上的装置和方法。电镀装置包括电镀电池和至少一个氧化装置。电镀电池包括阴极室和阳极室，隔室由金属阳离子通过但防止有机颗粒穿过。氧化装置（ODD）被配置为将要电镀的金属的阳离子氧化到基底上，该阳离子在电镀期间存在于阳极电解液中。在一些实施方案中，ODD被实施为碳阳极，其通过电化学方法从阳极电解液中除去Cu（I）。在其他实施方案中，ODD被实施为氧化装置（OGD）或外加电流阴极保护阳极（ICCP阳极），这两者都增加了阳极电解液溶液中的氧浓度。还公开了高效电镀的方法。

6. 发明授权

US08858774B2 Electroplating apparatus for tailored uniformity profile 有权
标题翻译：用于定制均匀性曲线的电镀设备
公开(公告)号：US08858774B2
公开(公告)日：2014-10-14
申请号：US13438443
申请日：2012-04-03
申请人： Steven T. Mayer , David W. Porter , Bryan L. Buckalew , Robert Rash
发明人： Steven T. Mayer , David W. Porter , Bryan L. Buckalew , Robert Rash
IPC分类号： C25D17/00 , C25D21/12 , C25D7/12 , C25D5/18 , H01L21/288 , C25D17/12 , C25D21/10 , H01L21/768
CPC分类号： C25D5/00 , C25D5/04 , C25D5/18 , C25D7/123 , C25D17/001 , C25D17/002 , C25D17/007 , C25D17/008 , C25D17/06 , C25D17/12 , C25D21/10 , C25D21/12 , H01L21/2885 , H01L21/76873
摘要： Methods of electroplating metal on a substrate while controlling azimuthal uniformity, include, in one aspect, providing the substrate to the electroplating apparatus configured for rotating the substrate during electroplating, and electroplating the metal on the substrate while rotating the substrate relative to a shield such that a selected portion of the substrate at a selected azimuthal position dwells in a shielded area for a different amount of time than a second portion of the substrate having the same average arc length and the same average radial position and residing at a different angular (azimuthal) position. For example, a semiconductor wafer substrate can be rotated during electroplating slower or faster, when the selected portion of the substrate passes through the shielded area.
摘要翻译：在一方面，在控制方位均匀性的同时，在基板上电镀金属的方法包括在电镀期间为电镀设备提供基板，该电镀设备被配置为在电镀期间旋转基板，以及在将基板相对于屏蔽件旋转的同时使金属电镀，在选择的方位角位置的衬底的选定部分在屏蔽区域中停留不同于具有相同平均弧长和相同平均径向位置并且位于不同角度（方位角）处的基底的第二部分的时间量，位置。例如，当基板的选定部分通过屏蔽区域时，半导体晶片基板可以在电镀期间更快或更快地旋转。

7. 发明申请

US20130292254A1 METHODS AND APPARATUSES FOR CLEANING ELECTROPLATING SUBSTRATE HOLDERS 审中-公开
标题翻译：清洗电镀基板支架的方法和装置
公开(公告)号：US20130292254A1
公开(公告)日：2013-11-07
申请号：US13852767
申请日：2013-03-28
申请人： Santosh Kumar , Bryan L. Buckalew , Steven T. Mayer , Thomas Ponnuswamy , Chad Michael Hosack , Robert Rash , Lee Peng Chua , David Porter
发明人： Santosh Kumar , Bryan L. Buckalew , Steven T. Mayer , Thomas Ponnuswamy , Chad Michael Hosack , Robert Rash , Lee Peng Chua , David Porter
IPC分类号： C25D17/00
CPC分类号： B08B3/022 , B08B3/041 , C25D7/12 , C25D17/00 , C25D17/001 , C25D21/00 , C25D21/12 , H01L21/67051
摘要： Disclosed herein are methods of cleaning a lipseal and/or cup bottom of an electroplating device by removing metal deposits accumulated in prior electroplating operations. The methods may include orienting a nozzle such that it is pointed substantially at the inner circular edge of the lipseal and/or cup bottom, and dispensing a stream of cleaning solution from the nozzle such that the stream contacts the inner circular edge of the lipseal and/or cup bottom while they are being rotated, removing metal deposits. In some embodiments, the stream has a velocity component against the rotational direction of the lipseal and/or cup bottom. In some embodiments, the deposits may include a tin/silver alloy. Also disclosed herein are cleaning apparatuses for mounting in electroplating devices and for removing electroplated metal deposits from their lipseals and/or cup bottoms. In some embodiments, the cleaning apparatuses may include a jet nozzle.
摘要翻译：本文公开了通过去除在现有电镀操作中积累的金属沉积物来清洁电镀装置的唇密封和/或杯底的方法。所述方法可以包括使喷嘴定向成使得其基本上指向唇密封件和/或杯底部的内圆形边缘，并且从喷嘴分配清洁溶液流，使得流接触唇塞的内圆形边缘，并且 /或杯底，同时旋转，去除金属沉积物。在一些实施例中，流具有抵抗唇密封和/或杯底的旋转方向的速度分量。在一些实施例中，沉积物可以包括锡/银合金。本文还公开了用于安装在电镀装置中并用于从其密封件和/或杯底部去除电镀金属沉积物的清洁装置。在一些实施例中，清洁设备可以包括喷嘴。

8. 发明授权

US08475637B2 Electroplating apparatus with vented electrolyte manifold 有权
标题翻译：带排气电解液歧管的电镀设备
公开(公告)号：US08475637B2
公开(公告)日：2013-07-02
申请号：US12337147
申请日：2008-12-17
申请人： Jingbin Feng , Zhian He , Robert Rash , Steven T. Mayer
发明人： Jingbin Feng , Zhian He , Robert Rash , Steven T. Mayer
IPC分类号： C25D17/00 , C25D21/04
CPC分类号： C25D7/123 , C25D17/001 , C25D17/002
摘要： Embodiments related to increasing a uniformity of an electroplated film are disclosed. For example, one disclosed embodiment provides an electroplating apparatus comprising a plating chamber, a work piece holder, a cathode contact configured to electrically contact a work piece, and an anode contact configured to electrically contact an anode disposed in the plating chamber. A diffusing barrier is disposed between the cathode contact and the anode contact to provide a uniform electrolyte flow to the work piece, and electrolyte delivery and return paths are provided for delivering electrolyte to and away from the plating chamber. Additionally, a vented electrolyte manifold is disposed in the electrolyte delivery path immediately upstream of the plating chamber, the vented electrolyte manifold comprising one or more electrolyte delivery openings that open to the plating chamber and one or more vents that open to a location other than the plating chamber.
摘要翻译：公开了与提高电镀膜的均匀性有关的实施例。例如，一个公开的实施例提供了一种电镀设备，其包括电镀室，工件保持器，构造成电接触工件的阴极接触件和被配置为电接触设置在电镀室中的阳极的阳极接触件。扩散阻挡层设置在阴极接触件和阳极接触件之间，以提供均匀的电解质流向工件，并且提供电解质输送和返回路径用于将电解质输送到电镀室和远离电镀室。另外，排气的电解液歧管设置在紧邻镀室的上游的电解质输送路径中，排出的电解质歧管包括一个或多个向电镀室敞开的电解质输送开口，以及一个或多个通向出口电镀室。

9. 发明申请

US20100147679A1 Electroplating Apparatus with Vented Electrolyte Manifold 有权
标题翻译：带通风电解质歧管的电镀设备
公开(公告)号：US20100147679A1
公开(公告)日：2010-06-17
申请号：US12337147
申请日：2008-12-17
申请人： Jingbin Feng , Zhian He , Robert Rash , Steven T. Mayer
发明人： Jingbin Feng , Zhian He , Robert Rash , Steven T. Mayer
IPC分类号： C25D17/00
CPC分类号： C25D7/123 , C25D17/001 , C25D17/002
摘要： Embodiments related to increasing a uniformity of an electroplated film are disclosed. For example, one disclosed embodiment provides an electroplating apparatus comprising a plating chamber, a work piece holder, a cathode contact configured to electrically contact a work piece, and an anode contact configured to electrically contact an anode disposed in the plating chamber. A diffusing barrier is disposed between the cathode contact and the anode contact to provide a uniform electrolyte flow to the work piece, and electrolyte delivery and return paths are provided for delivering electrolyte to and away from the plating chamber. Additionally, a vented electrolyte manifold is disposed in the electrolyte delivery path immediately upstream of the plating chamber, the vented electrolyte manifold comprising one or more electrolyte delivery openings that open to the plating chamber and one or more vents that open to a location other than the plating chamber.
摘要翻译：公开了与提高电镀膜的均匀性有关的实施例。例如，一个公开的实施例提供了一种电镀设备，其包括电镀室，工件保持器，构造成电接触工件的阴极接触件和被配置为电接触设置在电镀室中的阳极的阳极接触件。扩散阻挡层设置在阴极接触件和阳极接触件之间，以提供均匀的电解质流向工件，并且提供电解质输送和返回路径用于将电解质输送到电镀室和远离电镀室。另外，排气的电解液歧管设置在紧邻镀室的上游的电解质输送路径中，排出的电解质歧管包括一个或多个向电镀室敞开的电解质输送开口，以及一个或多个通向出口电镀室。

10. 发明申请

US20140197037A1 TREATMENT METHOD OF ELECTRODEPOSITED COPPER FOR WAFER-LEVEL-PACKAGING PROCESS FLOW 有权
标题翻译：用于水平包装工艺流程的电沉积铜处理方法
公开(公告)号：US20140197037A1
公开(公告)日：2014-07-17
申请号：US13744335
申请日：2013-01-17
申请人： Bryan L. Buckalew , Steven T. Mayer , Thomas Ponnuswamy , David Porter
发明人： Bryan L. Buckalew , Steven T. Mayer , Thomas Ponnuswamy , David Porter
IPC分类号： H05K3/00
CPC分类号： H01L24/11 , C25D3/38 , C25D3/60 , C25D5/10 , C25D5/50 , C25D17/00 , H01L21/2885 , H01L21/6723 , H01L24/03 , H01L24/05 , H01L24/13 , H01L2224/03462 , H01L2224/03848 , H01L2224/0401 , H01L2224/05548 , H01L2224/05647 , H01L2224/11334 , H01L2224/11849 , H01L2224/13111 , H01L2224/16503 , H01L2224/94 , H01L2924/01322 , H01L2924/12044 , H01L2924/3656 , H01L2224/03 , H01L2224/11 , H01L2924/00014 , H01L2924/00012 , H01L2924/01047 , H01L2924/01029 , H01L2924/00
摘要： A method of treating a copper containing structure on a substrate is disclosed. The method includes electrodepositing the copper containing structure on a substrate, annealing the copper containing structure, and forming an interface between a pad of the copper containing structure and a solder structure after anneal. The interface can have improved resistance to interfacial voiding. The copper containing structure is configured to deliver current between one or more ports and one or more solder structures in the integrated circuit package. Annealing the copper containing structure can move impurities and vacancies to the surface of the copper containing structure for subsequent removal.
摘要翻译：公开了一种在衬底上处理含铜结构的方法。该方法包括在基板上电沉积含铜结构，退火含铜结构，并在退火后形成含铜结构的焊盘和焊料结构之间的界面。界面可以改善对界面空隙的抵抗力。含铜结构被配置为在集成电路封装中的一个或多个端口与一个或多个焊料结构之间输送电流。退火含铜结构可以将杂质和空位移动到含铜结构的表面以便随后除去。

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