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1. 发明申请

US20050247976A1 Notched spacer for CMOS transistors 审中-公开
标题翻译：用于CMOS晶体管的缺口间隔物
公开(公告)号：US20050247976A1
公开(公告)日：2005-11-10
申请号：US10840125
申请日：2004-05-06
申请人： Steve Ting , Chih-Hao Wang
发明人： Steve Ting , Chih-Hao Wang
IPC分类号： H01L21/265 , H01L21/336 , H01L29/76
CPC分类号： H01L29/6653 , H01L21/26586 , H01L29/6656 , H01L29/6659
摘要： A notched spacer for CMOS transistors and a method of manufacture is provided. A gate electrode is formed on a substrate. A first ion implant mask is formed alongside the gate electrode such that the first ion implant mask is at least partially removed along the surface of the substrate. A first ion implant is performed at an oblique angle to the surface of the substrate to implant impurities of a first conductivity type in the substrate beneath at least a portion of the gate electrode. A second ion implant is performed at an angle normal to the surface of the substrate to implant impurities of a second conductivity type to form source/drain extensions of the CMOS transistors. Additional spacers and ion implants may be performed to fabricate graded source/drain regions.
摘要翻译：提供了用于CMOS晶体管的缺口间隔物和制造方法。在基板上形成栅电极。沿着栅电极形成第一离子注入掩模，使得第一离子注入掩模至少部分地沿着衬底的表面去除。以与衬底表面倾斜的角度执行第一离子注入，以在栅极电极的至少一部分下方的衬底中注入第一导电类型的杂质。以垂直于衬底表面的角度执行第二离子注入，以注入第二导电类型的杂质以形成CMOS晶体管的源极/漏极扩展。可以执行附加的间隔物和离子植入物以制造分级的源极/漏极区域。

2. 发明申请

US20070093033A1 Ultra shallow junction formation by solid phase diffusion 有权
标题翻译：通过固相扩散形成超浅结
公开(公告)号：US20070093033A1
公开(公告)日：2007-04-26
申请号：US11258469
申请日：2005-10-24
申请人： Chih-Hao Wang , Yen-Ping Wang , Steve Ting , Yi-Chun Huang
发明人： Chih-Hao Wang , Yen-Ping Wang , Steve Ting , Yi-Chun Huang
IPC分类号： H01L21/336
CPC分类号： H01L29/6659 , H01L29/165 , H01L29/517 , H01L29/6656 , H01L29/66628 , H01L29/66636 , H01L29/7833
摘要： An ultra shallow junction (USJ) FET device and method for forming the same with improved control over SDE or LDD doped region interfaces to improve device performance and reliability is provided, the method including providing a semiconductor substrate; forming a gate structure comprising a gate dielectric, an overlying gate electrode, and first offset spacers adjacent either side of the gate electrode; forming at least one doped semiconductor layer comprising dopants over a respective source and drain region adjacent the respective first offset spacers; forming second offset spacers adjacent the respective first offset spacers; and, thermally treating the at least one semiconductor layer to cause out-diffusion of the dopants to form doped regions in the semiconductor substrate.
摘要翻译：提供了一种超浅结（USJ）FET器件及其形成方法，其具有改善的对SDE或LDD掺杂区界面的控制以提高器件性能和可靠性，该方法包括提供半导体衬底; 形成栅极结构，所述栅极结构包括栅极电介质，上覆栅极电极和邻近所述栅电极的任一侧的第一偏移间隔物; 在与相应的第一偏移间隔物相邻的相应源极和漏极区域上形成包含掺杂剂的至少一个掺杂半导体层; 在相邻的第一偏移间隔物附近形成第二偏移间隔物; 并且对所述至少一个半导体层进行热处理以引起所述掺杂剂的扩散以在所述半导体衬底中形成掺杂区域。

3. 发明申请

US20220165868A1 Isolation Structures of Semiconductor Devices 有权
公开(公告)号：US20220165868A1
公开(公告)日：2022-05-26
申请号：US17666241
申请日：2022-02-07
申请人： Jia-Chuan You , Chih-Hao Wang , Shi Ning Ju , Kuo-Cheng Chiang , Li-Yang Chuang
发明人： Jia-Chuan You , Chih-Hao Wang , Shi Ning Ju , Kuo-Cheng Chiang , Li-Yang Chuang
IPC分类号： H01L29/66 , H01L27/088 , H01L29/165 , H01L29/06
摘要： The present disclosure describes a semiconductor structure and a method for forming the same. The semiconductor structure can include a substrate, a first vertical structure and a second vertical structure formed over the substrate, and an isolation structure between the first and second vertical structures. The isolation structure can include a center region and footing regions formed on opposite sides of the center region. Each of the footing regions can be tapered towards the center region from a first end of the each footing region to a second end of the each footing region.

4. 发明申请

US20130181420A1 THREE-WHEELED MOTOR VEHICLE WITH HIGH SAFETY 有权
标题翻译：三轮摩托车高安全性
公开(公告)号：US20130181420A1
公开(公告)日：2013-07-18
申请号：US13352356
申请日：2012-01-18
申请人： Mau-Pin Hsu , Hsin-Wei Su , Chih-Hao Wang
发明人： Mau-Pin Hsu , Hsin-Wei Su , Chih-Hao Wang
IPC分类号： B62D7/16
CPC分类号： B62K5/10 , B62K5/025
摘要： A three-wheeled motor vehicle includes a main body, two shafts, two wheel bases, a blocking structure fixed to the main body and a linkage module. Each shaft has first, second and third pivot points. The third pivot point between the first and second pivot points is pivoted to the main body. One wheel base is pivoted to the first pivot points. The other wheel base is pivoted to the second pivot points. The wheel bases and the shafts form a parallelogram four bar mechanism. The linkage module is coupled between the main body and the parallelogram four bar mechanism. When the main body tilts as the three-wheeled motor vehicle turning, the linkage module changes from a first state to a second state to drive the wheel bases to tilt.The linkage module in the second state leans against the blocking structure to limit the tilt range of the wheel bases.
摘要翻译：三轮机动车辆包括主体，两个轴，两个轮基座，固定在主体上的阻挡结构和连杆模块。每个轴具有第一，第二和第三枢轴点。第一和第二枢转点之间的第三枢转点枢转到主体。一个车轮底座枢转到第一枢轴点。另一个轮毂基座枢转到第二枢转点。车轮底座和轴形成平行四边形四杆机构。联动模块连接在主体和平行四边形四杆机构之间。当主体以三轮机动车辆转弯的方式倾斜时，联动模块从第一状态变为第二状态，以驱动车轮底座倾斜。处于第二状态的联动模块倾斜于阻挡结构以限制车轮基座的倾斜范围。

5. 发明授权

US08421772B2 Resistive touch control device and driving method and driving controller thereof 失效
标题翻译：电阻式触摸控制装置及其驱动方法及其驱动控制器
公开(公告)号：US08421772B2
公开(公告)日：2013-04-16
申请号：US12691741
申请日：2010-01-22
申请人： Jian-Feng Li , Wen-Chun Wang , Chih-Chang Lai , Kuo-Chang Su , Gwo-Sen Lin , Chih-Hao Wang
发明人： Jian-Feng Li , Wen-Chun Wang , Chih-Chang Lai , Kuo-Chang Su , Gwo-Sen Lin , Chih-Hao Wang
IPC分类号： G06F3/041 , G06F3/045
CPC分类号： G06F3/0416 , G06F3/045 , G06F2203/04104
摘要： A resistive touch control device and driving methods and a driving controller thereof are provided to switch operation modes of a touch panel. Depending on the user's requirement, the touch panel can be operated in multi-touch mode or only in an analog mode with high resolution. In other words, the touch control device can be operated in a digital mode, the analog mode, or a hybrid mode including both of the digital and the analog modes.
摘要翻译：提供电阻式触摸控制装置及其驱动方法及其驱动控制器来切换触摸面板的操作模式。根据用户要求，触摸面板可以在多点触摸模式下操作，也可以仅在具有高分辨率的模拟模式下操作。换句话说，触摸控制装置可以以数字模式，模拟模式或包括数字模式和模拟模式两者的混合模式操作。

6. 发明申请

US20110262090A1 SINGLE-POLARIZATION FIBER 有权
标题翻译：单极化纤维
公开(公告)号：US20110262090A1
公开(公告)日：2011-10-27
申请号：US12768443
申请日：2010-04-27
申请人： William Jacobsen , Jeffrey Mayfield , Paula Fournier , David Bolte , Hussein Elmaola , Chih-Hao Wang , Gary Drenzek , Abdelouahed Soufiane
发明人： William Jacobsen , Jeffrey Mayfield , Paula Fournier , David Bolte , Hussein Elmaola , Chih-Hao Wang , Gary Drenzek , Abdelouahed Soufiane
IPC分类号： G02B6/02
CPC分类号： G02B6/03627 , G02B6/024
摘要： Embodiments of the invention relate to a single-polarization fiber that may include a W-type refractive-index profile having a depressed region along an unguided principal axis of the fiber, and a quasi step-index profile along a guided principal axis of the fiber. The quasi step-index profile may have a depressed region with a radial extent at least twice that of the depressed region along the unguided axis.
摘要翻译：本发明的实施例涉及可以包括具有沿着光纤的非导向主轴的凹陷区域的W型折射率分布的单偏振光纤，以及沿着光纤的导向主轴的准阶跃折射率分布。准阶梯折射率分布可以具有凹陷区域，其具有沿着未引导轴线的凹陷区域的至少两倍的径向范围。

7. 发明申请

US20110154942A1 SAFETY DEVICE ON STEERING HANDLE 有权
标题翻译：转向手柄安全装置
公开(公告)号：US20110154942A1
公开(公告)日：2011-06-30
申请号：US12843866
申请日：2010-07-26
申请人： Mau-Pin Hsu , Hsin-Wei Su , Chih-Hao Wang , Ruei-Fu Wang
发明人： Mau-Pin Hsu , Hsin-Wei Su , Chih-Hao Wang , Ruei-Fu Wang
IPC分类号： B62K21/12
CPC分类号： B62K21/12 , B62J27/00 , B62K21/08 , Y10T74/2078 , Y10T74/20822
摘要： Disclosed is a safety device on a steering handle, capable of controlling a direction-control wheel of a wheeled vehicle. The handlebar is engaged with the head part by its mortise with a tenon of the head part. When an outer bar end of the handlebar is hit, an inner tube of the handlebar will be pushed to disengage the mortise and the tenon to rotate the handlebar along. Alternatively, paired washers with wedge-shaped teeth can be utilized to engage the handlebar with the head part. When the outer bar end is hit, the washers are disengaged to allow the handlebar to rotate. Moreover, a hydraulic system or an inserting rod with a chassis groove system can be employed to maintain the original direction of the direction-control wheel when the handlebar is hit. Therefore, a sudden turn of the direction-control wheel and an fall-over of the rider and the vehicle can be prevented.
摘要翻译：公开了一种能够控制轮式车辆的方向控制轮的转向手柄上的安全装置。车把与头部通过榫头与头部部分接合。当把手的外杆端被撞击时，把手的内管将被推动以使榫眼和榫头脱离以沿着手柄旋转。或者，具有楔形齿的配对垫圈可用于将车把与头部接合。当外杆端被撞击时，垫圈被分离以允许把手旋转。此外，当手柄被撞击时，可采用具有底盘槽系统的液压系统或插入杆来保持方向控制轮的原始方向。因此，可以防止方向控制轮的突然转动以及骑车人和车辆的倒下。

8. 发明授权

US07829978B2 Closed loop CESL high performance CMOS device 有权
标题翻译：闭环CESL高性能CMOS器件
公开(公告)号：US07829978B2
公开(公告)日：2010-11-09
申请号：US11170201
申请日：2005-06-29
申请人： Shang-Chih Chen , Shih-Hsieng Huang , Chih-Hao Wang
发明人： Shang-Chih Chen , Shih-Hsieng Huang , Chih-Hao Wang
IPC分类号： H01L23/58
CPC分类号： H01L21/823807 , H01L21/823864 , H01L29/6656 , H01L29/7833 , H01L29/7843 , Y10S257/90
摘要： An N-MOS and/or P-MOS device having enhanced performance such as an FET suitable for use in a CMOS circuit. The device comprises both an “L-like” shaped layer or spacer on the side walls of a gate structure as well as a CESL (contact-etch stop layer) that covers the gate structure and surrounding substrate to induce increase tensile stresses in the N-MOS device and increased compressive stresses in the P-MOS device.
摘要翻译：具有增强性能的N-MOS和/或P-MOS器件，例如适用于CMOS电路的FET。该器件包括栅极结构的侧壁上的“L形”形状的层或间隔物以及覆盖栅极结构和周围衬底的CESL（接触蚀刻停止层），以在N中引起增加的拉伸应力 -MOS器件和P-MOS器件中增加的压应力。

9. 发明授权

US07768072B2 Silicided metal gate for multi-threshold voltage configuration 有权
标题翻译：硅化金属栅极，用于多阈值电压配置
公开(公告)号：US07768072B2
公开(公告)日：2010-08-03
申请号：US11728809
申请日：2007-03-27
申请人： Ching-Wei Tsai , Chih-Hao Wang , Wei-Jung Lin , Huan-Tsung Huang , Carlos H. Diaz
发明人： Ching-Wei Tsai , Chih-Hao Wang , Wei-Jung Lin , Huan-Tsung Huang , Carlos H. Diaz
IPC分类号： H01L29/94
CPC分类号： H01L27/088 , H01L21/28097 , H01L21/82345 , H01L29/4975 , H01L29/66545 , H01L29/7833
摘要： A PMOS (p-channel metal oxide semiconductor) device having at low voltage threshold MOSFET (MOS field effect transistor) with an improved work function and favorable DIBL (drain-induced barrier lowering) and SCE (short channel effect) characteristics, and a method for making such a device. The PMOS device includes a gate structure that is disposed on a substrate and includes a silicided gate electrode. The silicide is preferably nickel-rich and includes a peak platinum concentration at or near the interface between the gate electrode and a dielectric layer that separates the gate electrode from the substrate. The platinum peak region is produced by a multi-step rapid thermal annealing or similar process. The PMOS device may also include two such MOSFETs, one of which is boron-doped and one of which is not.
摘要翻译：具有改进的功函数和良好的DIBL（漏极诱发的势垒降低）和SCE（短沟道效应）特性的低电压阈值MOSFET（MOS场效应晶体管）的PMOS（p沟道金属氧化物半导体）器件，以及一种方法用于制造这样的装置。 PMOS器件包括设置在衬底上并包括硅化栅电极的栅极结构。硅化物优选为富镍，并且包括在栅电极和将栅电极与衬底分离的电介质层之间的界面处或附近的峰值铂浓度。通过多步快速热退火或类似方法制备铂峰区域。 PMOS器件还可以包括两个这样的MOSFET，其中一个是硼掺杂的，其中一个不是。

10. 发明授权

US07763945B2 Strained spacer design for protecting high-K gate dielectric 有权
标题翻译：用于保护高K栅电介质的应变间隔设计
公开(公告)号：US07763945B2
公开(公告)日：2010-07-27
申请号：US11736755
申请日：2007-04-18
申请人： Chih-Hao Wang , Shang-Chih Chen
发明人： Chih-Hao Wang , Shang-Chih Chen
IPC分类号： H01L31/119
CPC分类号： H01L21/823807 , H01L21/823864 , H01L27/092 , H01L29/513 , H01L29/517 , H01L29/665 , H01L29/6656 , H01L29/7842 , H01L29/7843
摘要： A semiconductor device pair is provided. The semiconductor device pair comprises a semiconductor substrate comprising a first gate structure with a first type polarity and a second gate structure with a second type polarity, the first and the second gate structures comprise a high-K gate dielectric. A plurality of oxygen-free offset spacer portions are adjacent either side of the respective first and second gate structures, each comprising a stressed dielectric layer, to induce a desired strain on a respective channel region while sealing respective high-K gate dielectric sidewall portions, wherein the oxygen-free offset spacer portions adjacent either side of the first gate structure and the oxygen-free offset spacer portions adjacent either side of the second gate structure are formed with different shapes.
摘要翻译：提供半导体器件对。半导体器件对包括半导体衬底，其包括具有第一类型极性的第一栅极结构和具有第二类型极性的第二栅极结构，第一和第二栅极结构包括高K栅极电介质。多个无氧偏移间隔物部分相邻于相应的第一和第二栅极结构的每一侧，每一个包括应力介电层，以在相应的沟道区域上引起期望的应变，同时密封相应的高K栅介质侧壁部分，其中邻近所述第一栅极结构的任一侧的所述无氧偏移间隔物部分和邻近所述第二栅极结构的任一侧的所述无氧偏移间隔物部分形成为不同的形状。

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