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    • 2. 发明申请
    • METHOD FOR TUNABLY REPAIRING LOW-K DIELECTRIC DAMAGE
    • 用于修复低K电介质损伤的方法
    • US20110097821A1
    • 2011-04-28
    • US12604222
    • 2009-10-22
    • Stephen M. SirardJames DeYoungOdette Turmel
    • Stephen M. SirardJames DeYoungOdette Turmel
    • H01L21/30
    • H01L21/3105H01L21/76814H01L21/76826
    • A method for providing a tuned repair for damage to a silicon based low-k dielectric layer with organic compounds, where damage replaces a methyl attached to silicon with a hydroxyl attached to silicon is provided. A precursor gas is provided, comprising a first repair agent represented as Si—(R)x(OR′)y, where y≧1 and x+y=4, and wherein R is an alkyl or aryl group and R′ is an alkyl or aryl group and a second repair agent represented as Si—(R)x(OR′)yR″, where y≧1 and x+y=3, and wherein R is an alkyl or aryl group and R′ is an alkyl or aryl group, and R″ is of a group that reduces interfacial surface tension between a wet clean chemical and the low-k dielectric. Some of the first repair agent and second repair agent are bonded to the low-k dielectric to form a monolayer of the first repair agent and the second repair agent.
    • 提供了一种用有机化合物对硅基低k电介质层进行损伤的调谐修复方法,其中损伤用连接到硅上的羟基连接到硅上的甲基代替。 提供了前体气体,其包含以Si-(R)x(OR')y表示的第一修复剂,其中y≥1且x + y = 4,并且其中R是烷基或芳基,R'是 烷基或芳基,第二修饰剂以Si-(R)x(OR')yR“表示,其中y≥1且x + y = 3,并且其中R是烷基或芳基,R'是烷基 或芳基,并且R“是降低湿清洁化学品和低k电介质之间的界面表面张力的基团。 一些第一修复剂和第二修复剂结合到低k电介质以形成第一修复剂和第二修复剂的单层。
    • 3. 发明授权
    • Method for tunably repairing low-k dielectric damage
    • 可调谐地修复低k电介质损伤的方法
    • US07981699B2
    • 2011-07-19
    • US12604222
    • 2009-10-22
    • Stephen M. SirardJames DeYoungOdette Turmel
    • Stephen M. SirardJames DeYoungOdette Turmel
    • H01L21/00
    • H01L21/3105H01L21/76814H01L21/76826
    • A method for providing a tuned repair for damage to a silicon based low-k dielectric layer with organic compounds, where damage replaces a methyl attached to silicon with a hydroxyl attached to silicon is provided. A precursor gas is provided, comprising a first repair agent represented as Si—(R)x(OR′)y, where y≧1 and x+y=4, and wherein R is an alkyl or aryl group and R′ is an alkyl or aryl group and a second repair agent represented as Si—(R)x(OR′)yR″, where y≧1 and x+y=3, and wherein R is an alkyl or aryl group and R′ is an alkyl or aryl group, and R″ is of a group that reduces interfacial surface tension between a wet clean chemical and the low-k dielectric. Some of the first repair agent and second repair agent are bonded to the low-k dielectric to form a monolayer of the first repair agent and the second repair agent.
    • 提供了一种用有机化合物对硅基低k电介质层进行损伤的调谐修复方法,其中损伤用连接到硅上的羟基连接到硅上的甲基代替。 提供了前体气体,其包含以Si-(R)x(OR')y表示的第一修复剂,其中y≥1且x + y = 4,并且其中R是烷基或芳基,R'是 烷基或芳基,第二修饰剂以Si-(R)x(OR')yR“表示,其中y≥1且x + y = 3,并且其中R是烷基或芳基,R'是烷基 或芳基,并且R“是降低湿清洁化学品和低k电介质之间的界面表面张力的基团。 一些第一修复剂和第二修复剂结合到低k电介质以形成第一修复剂和第二修复剂的单层。
    • 6. 发明申请
    • Low pH Development Solutions for Chemically Amplified Photoresists
    • 用于化学放大光致抗蚀剂的低pH开发解决方案
    • US20070154848A1
    • 2007-07-05
    • US11684672
    • 2007-03-12
    • Mark WagnerJames DeYoungMerrick MilesChris Harbinson
    • Mark WagnerJames DeYoungMerrick MilesChris Harbinson
    • G03C5/00
    • G03F7/36G03F7/32G03F7/325G03F7/327
    • A method for carrying out positive tone lithography with a carbon dioxide development system is carried out by: (a) providing a substrate, the substrate having a polymer resist layer formed thereon, (b) exposing at least one portion of the polymer resist layer to radiant energy causing a chemical shift to take place in the exposed portion and thereby form at least one light field region in the polymer resist layer while concurrently maintaining at least one portion of the polymer layer unexposed to the radiant energy to thereby form at least one dark field region in the polymer resist layer; (c) optionally baking the polymer resist layer; (d) contacting the polymer resist layer to a carbon dioxide solvent system, the solvent system comprising a polar group, under conditions in which the at least one light field region is preferentially removed from the substrate by the carbon dioxide solvent system as compared to the at least one dark field region; wherein the carbon dioxide solvent system comprises a first phase and a second phase, the first phase comprising carbon dioxide and the second phase comprising a polar fluid, with the at least one light field region being preferentially soluble in the polar fluid as compared to the at least one dark field region.
    • 通过以下方式进行用二氧化碳显影系统进行正色调光刻的方法:(a)提供衬底,其上形成有聚合物抗蚀剂层的衬底,(b)将至少一部分聚合物抗蚀剂层暴露于 导致在暴露部分发生化学位移的辐射能,从而在聚合物抗蚀剂层中形成至少一个光场区域,同时保持聚合物层的至少一部分未暴露于辐射能,从而形成至少一个黑暗 聚合物抗蚀剂层中的场区域; (c)任选地烘烤聚合物抗蚀剂层; (d)将所述聚合物抗蚀剂层与二氧化碳溶剂体系接触,所述溶剂体系包含极性基团,其中所述至少一个光场区域优选地通过二氧化碳溶剂系统从所述底物除去, 至少一个暗场区域; 其中所述二氧化碳溶剂系统包括第一相和第二相,所述第一相包含二氧化碳,所述第二相包含极性流体,其中所述至少一个光场区域优先溶于极性流体中,与第 至少一个暗场区域。
    • 7. 发明申请
    • Low pH development solutions for chemically amplified photoresists
    • 用于化学放大光致抗蚀剂的低pH开发解决方案
    • US20050208429A1
    • 2005-09-22
    • US11133077
    • 2005-05-19
    • James DeYoungJames McClain
    • James DeYoungJames McClain
    • G03F20060101G03F7/00G03F7/32G03F7/36
    • G03F7/36G03F7/32G03F7/325G03F7/327
    • A method for carrying out positive tone lithography with a carbon dioxide development system is carried out by: (a) providing a substrate, the substrate having a polymer resist layer formed thereon, (b) exposing at least one portion of the polymer resist layer to radiant energy causing a chemical shift to take place in the exposed portion and thereby form at least one light field region in the polymer resist layer while concurrently maintaining at least one portion of the polymer layer unexposed to the radiant energy to thereby form at least one dark field region in the polymer resist layer; (c) optionally baking the polymer resist layer; (d) contacting the polymer resist layer to a carbon dioxide solvent system, the solvent system comprising a polar group, under conditions in which the at least one light field region is preferentially removed from the substrate by the carbon dioxide solvent system as compared to the at least one dark field region; wherein the carbon dioxide solvent system comprises a first phase and a second phase, the first phase comprising carbon dioxide and the second phase comprising a polar fluid, with the at least one light field region being preferentially soluble in the polar fluid as compared to the at least one dark field region.
    • 通过以下方式进行用二氧化碳显影系统进行正色调光刻的方法:(a)提供衬底,其上形成有聚合物抗蚀剂层的衬底,(b)将至少一部分聚合物抗蚀剂层暴露于 导致在暴露部分发生化学位移的辐射能,从而在聚合物抗蚀剂层中形成至少一个光场区域,同时保持聚合物层的至少一部分未暴露于辐射能,从而形成至少一个黑暗 聚合物抗蚀剂层中的场区域; (c)任选地烘烤聚合物抗蚀剂层; (d)将所述聚合物抗蚀剂层与二氧化碳溶剂体系接触,所述溶剂体系包含极性基团,其中所述至少一个光场区域优选地通过二氧化碳溶剂系统从所述底物除去, 至少一个暗场区域; 其中所述二氧化碳溶剂系统包括第一相和第二相,所述第一相包含二氧化碳,所述第二相包含极性流体,其中所述至少一个光场区域优先溶于极性流体中,与第 至少一个暗场区域。