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1. 发明申请

US20110244600A1 METHOD FOR TUNABLY REPAIRING LOW-K DIELECTRIC DAMAGE 审中-公开
公开(公告)号：US20110244600A1
公开(公告)日：2011-10-06
申请号：US13158342
申请日：2011-06-10
申请人： Stephen M. Sirard , James DeYoung , Odette Turmel
发明人： Stephen M. Sirard , James DeYoung , Odette Turmel
IPC分类号： H01L21/306
CPC分类号： H01L21/3105 , H01L21/76814 , H01L21/76826
摘要： A method for providing a tuned repair for damage to a silicon based low-k dielectric layer with organic compounds, where damage replaces a methyl attached to silicon with a hydroxyl attached to silicon is provided. A precursor gas is provided, comprising a first repair agent represented as Si—(R)x(OR′)y, where y≧1 and x+y=4, and wherein R is an alkyl or aryl group and R′ is an alkyl or aryl group and a second repair agent represented as Si—(R)x(OR′)yR″, where y≧1 and x+y=3, and wherein R is an alkyl or aryl group and R′ is an alkyl or aryl group, and R″ is of a group that reduces interfacial surface tension between a wet clean chemical and the low-k dielectric. Some of the first repair agent and second repair agent are bonded to the low-k dielectric to form a monolayer of the first repair agent and the second repair agent.

2. 发明授权

US07534363B2 Method for providing uniform removal of organic material 有权
标题翻译：提供均匀去除有机材料的方法
公开(公告)号：US07534363B2
公开(公告)日：2009-05-19
申请号：US10877222
申请日：2004-06-25
申请人： Rao V. Annapragada , Odette Turmel , Kenji Takeshita , Lily Zheng , Thomas S. Choi , David R. Pirkle
发明人： Rao V. Annapragada , Odette Turmel , Kenji Takeshita , Lily Zheng , Thomas S. Choi , David R. Pirkle
IPC分类号： C23F1/00
CPC分类号： H01J37/3244 , G03F7/427 , H01J37/32082 , H01L21/31116 , H01L21/31138
摘要： A method for removing organic material over a substrate is provided. The substrate is placed in a plasma processing chamber. A first gas is provided to an inner zone within the plasma processing chamber. A second gas is provided to an outer zone of the plasma processing chamber, wherein the outer zone surrounds the inner zone and the second gas has a carbon containing component, wherein a concentration of the carbon containing component of the second gas is greater than a concentration of the carbon containing component in the first gas. Plasmas are simultaneously generated from the first gas and second gas. Some or all of the organic material is removed using the generated plasmas.
摘要翻译：提供了一种在衬底上除去有机材料的方法。将基板放置在等离子体处理室中。第一气体被提供到等离子体处理室内的内部区域。第二气体被提供到等离子体处理室的外部区域，其中外部区域围绕内部区域，第二气体具有含碳成分，其中第二气体的含碳成分的浓度大于浓度的第一气体中的含碳组分。从第一气体和第二气体同时产生等离子体。使用所产生的等离子体去除部分或全部有机材料。

3. 发明申请

US20050006346A1 Method for providing uniform removal of organic material 有权
标题翻译：提供均匀去除有机材料的方法
公开(公告)号：US20050006346A1
公开(公告)日：2005-01-13
申请号：US10877222
申请日：2004-06-25
申请人： Rao Annapragada , Odette Turmel , Kenji Takeshita , Lily Zheng , Thomas Choi , David Pirkle
发明人： Rao Annapragada , Odette Turmel , Kenji Takeshita , Lily Zheng , Thomas Choi , David Pirkle
IPC分类号： C23F1/00 , H01J37/32 , H01L21/306 , H01L21/311
CPC分类号： H01J37/3244 , G03F7/427 , H01J37/32082 , H01L21/31116 , H01L21/31138
摘要： A method for removing organic material over a substrate is provided. The substrate is placed in a plasma processing chamber. A first gas is provided to an inner zone within the plasma processing chamber. A second gas is provided to an outer zone of the plasma processing chamber, wherein the outer zone surrounds the inner zone and the second gas has a carbon containing component, wherein a concentration of the carbon containing component of the second gas is greater than a concentration of the carbon containing component in the first gas. Plasmas are simultaneously generated from the first gas and second gas. Some or all of the organic material is removed using the generated plasmas.
摘要翻译：提供了一种在衬底上除去有机材料的方法。将基板放置在等离子体处理室中。第一气体被提供到等离子体处理室内的内部区域。第二气体被提供到等离子体处理室的外部区域，其中外部区域围绕内部区域，第二气体具有含碳成分，其中第二气体的含碳成分的浓度大于浓度的第一气体中的含碳组分。从第一气体和第二气体同时产生等离子体。使用所产生的等离子体去除部分或全部有机材料。

4. 发明授权

US07981699B2 Method for tunably repairing low-k dielectric damage 有权
标题翻译：可调谐地修复低k电介质损伤的方法
公开(公告)号：US07981699B2
公开(公告)日：2011-07-19
申请号：US12604222
申请日：2009-10-22
申请人： Stephen M. Sirard , James DeYoung , Odette Turmel
发明人： Stephen M. Sirard , James DeYoung , Odette Turmel
IPC分类号： H01L21/00
CPC分类号： H01L21/3105 , H01L21/76814 , H01L21/76826
摘要： A method for providing a tuned repair for damage to a silicon based low-k dielectric layer with organic compounds, where damage replaces a methyl attached to silicon with a hydroxyl attached to silicon is provided. A precursor gas is provided, comprising a first repair agent represented as Si—(R)x(OR′)y, where y≧1 and x+y=4, and wherein R is an alkyl or aryl group and R′ is an alkyl or aryl group and a second repair agent represented as Si—(R)x(OR′)yR″, where y≧1 and x+y=3, and wherein R is an alkyl or aryl group and R′ is an alkyl or aryl group, and R″ is of a group that reduces interfacial surface tension between a wet clean chemical and the low-k dielectric. Some of the first repair agent and second repair agent are bonded to the low-k dielectric to form a monolayer of the first repair agent and the second repair agent.
摘要翻译：提供了一种用有机化合物对硅基低k电介质层进行损伤的调谐修复方法，其中损伤用连接到硅上的羟基连接到硅上的甲基代替。提供了前体气体，其包含以Si-（R）x（OR'）y表示的第一修复剂，其中y≥1且x + y = 4，并且其中R是烷基或芳基，R'是烷基或芳基，第二修饰剂以Si-（R）x（OR'）yR“表示，其中y≥1且x + y = 3，并且其中R是烷基或芳基，R'是烷基或芳基，并且R“是降低湿清洁化学品和低k电介质之间的界面表面张力的基团。一些第一修复剂和第二修复剂结合到低k电介质以形成第一修复剂和第二修复剂的单层。

5. 发明授权

US07521362B2 Methods for the optimization of ion energy control in a plasma processing system 有权
标题翻译：在等离子体处理系统中优化离子能量控制的方法
公开(公告)号：US07521362B2
公开(公告)日：2009-04-21
申请号：US10745846
申请日：2003-12-23
申请人： Kenji Takeshita , Odette Turmel , Felix Kozakevich , Eric Hudson
发明人： Kenji Takeshita , Odette Turmel , Felix Kozakevich , Eric Hudson
IPC分类号： H01L21/302
CPC分类号： H01L21/76811 , H01L21/31116 , H01L21/31144 , H01L21/76807
摘要： A method in a plasma processing system for etching a feature through a dielectric layer of a dual damascene stack on a semiconductor substrate is disclosed. The method includes placing the substrate in a plasma processing chamber of the plasma processing system. The method further includes flowing an etchant gas mixture into the plasma processing chamber, the etchant gas mixture being configured to etch the dielectric layer. The method additionally includes striking a plasma from the etchant source gas. The method also includes etching the feature through the dielectric layer while applying a bias RF signal to the substrate, the bias RF signal having a bias RF frequency of between about 27 MHz and about 90 MHz. The bias RF signal further has a bias RF power component that is configured to cause the feature to be etched in accordance to predefined etch rate parameters and etch profile parameters at the bias RF frequency.
摘要翻译：公开了一种用于通过半镶嵌叠层的电介质层在半导体衬底上蚀刻特征的等离子体处理系统中的方法。该方法包括将基板放置在等离子体处理系统的等离子体处理室中。该方法还包括将蚀刻剂气体混合物流入等离子体处理室，蚀刻剂气体混合物被配置为蚀刻介电层。该方法还包括从蚀刻剂源气体冲击等离子体。该方法还包括通过介电层蚀刻特征，同时向衬底施加偏置RF信号，偏置RF信号具有在约27MHz和约90MHz之间的偏置RF频率。偏置RF信号还具有偏置RF功率分量，其被配置为根据预定的蚀刻速率参数和偏置RF频率处的蚀刻轮廓参数来蚀刻特征。

6. 发明申请

US20080113516A1 SELECTIVITY CONTROL IN A PLASMA PROCESSING SYSTEM 有权
标题翻译：等离子体处理系统中的选择性控制
公开(公告)号：US20080113516A1
公开(公告)日：2008-05-15
申请号：US11969833
申请日：2008-01-04
申请人： Kenji Takeshita , Odette Turmel , Felix Kozakevich , Eric Hudson
发明人： Kenji Takeshita , Odette Turmel , Felix Kozakevich , Eric Hudson
IPC分类号： H01L21/461
CPC分类号： H01L21/76811 , H01J37/32706 , H01L21/31116 , H01L21/31144
摘要： A method in a plasma processing system for etching a feature through a given layer on a semiconductor substrate. The method includes placing the substrate in a plasma processing chamber of the plasma processing system. The method also includes flowing an etchant gas mixture into the plasma processing chamber, the etchant gas mixture being configured to etch the given layer. The method additionally includes striking a plasma from the etchant source gas. Furthermore, the method includes etching the feature at least partially through the given layer while applying a bias RF signal to the substrate, the bias RF signal having a bias RF frequency of between about 45 MHz and about 75 MHz. The bias RF signal further has a bias RF power component that is configured to cause the etch feature to be etched with an etch selectivity to a second layer of the substrate that is higher than a predefined selectivity threshold.
摘要翻译：一种用于通过半导体衬底上的给定层蚀刻特征的等离子体处理系统中的方法。该方法包括将基板放置在等离子体处理系统的等离子体处理室中。该方法还包括将蚀刻剂气体混合物流动到等离子体处理室中，蚀刻剂气体混合物被配置为蚀刻给定层。该方法还包括从蚀刻剂源气体冲击等离子体。此外，该方法包括至少部分地通过给定层蚀刻特征，同时向衬底施加偏置RF信号，偏置RF信号具有在约45MHz和约75MHz之间的偏置RF频率。偏置RF信号还具有偏置RF功率分量，该偏置RF功率分量被配置为使得蚀刻特征被蚀刻以对于高于预定义的选择性阈值的衬底的第二层的蚀刻选择性。

7. 发明申请

US20060121729A1 Methods for the optimization of ion energy control in a plasma processing system 有权
公开(公告)号：US20060121729A1
公开(公告)日：2006-06-08
申请号：US10745846
申请日：2003-12-23
申请人： Kenji Takeshita , Odette Turmel , Felix Kozakevich , Eric Hudson
发明人： Kenji Takeshita , Odette Turmel , Felix Kozakevich , Eric Hudson
IPC分类号： H01L21/461
CPC分类号： H01L21/76811 , H01L21/31116 , H01L21/31144 , H01L21/76807
摘要： A method in a plasma processing system for etching a feature through a dielectric layer of a dual damascene stack on a semiconductor substrate is disclosed. The method includes placing the substrate in a plasma processing chamber of the plasma processing system. The method further includes flowing an etchant gas mixture into the plasma processing chamber, the etchant gas mixture being configured to etch the dielectric layer. The method additionally includes striking a plasma from the etchant source gas. The method also includes etching the feature through the dielectric layer while applying a bias RF signal to the substrate, the bias RF signal having a bias RF frequency of between about 27 MHz and about 90 MHz. The bias RF signal further has a bias RF power component that is configured to cause the feature to be etched in accordance to predefined etch rate parameters and etch profile parameters at the bias RF frequency.

8. 发明申请

US20110097821A1 METHOD FOR TUNABLY REPAIRING LOW-K DIELECTRIC DAMAGE 有权
标题翻译：用于修复低K电介质损伤的方法
公开(公告)号：US20110097821A1
公开(公告)日：2011-04-28
申请号：US12604222
申请日：2009-10-22
申请人： Stephen M. Sirard , James DeYoung , Odette Turmel
发明人： Stephen M. Sirard , James DeYoung , Odette Turmel
IPC分类号： H01L21/30
CPC分类号： H01L21/3105 , H01L21/76814 , H01L21/76826
摘要： A method for providing a tuned repair for damage to a silicon based low-k dielectric layer with organic compounds, where damage replaces a methyl attached to silicon with a hydroxyl attached to silicon is provided. A precursor gas is provided, comprising a first repair agent represented as Si—(R)x(OR′)y, where y≧1 and x+y=4, and wherein R is an alkyl or aryl group and R′ is an alkyl or aryl group and a second repair agent represented as Si—(R)x(OR′)yR″, where y≧1 and x+y=3, and wherein R is an alkyl or aryl group and R′ is an alkyl or aryl group, and R″ is of a group that reduces interfacial surface tension between a wet clean chemical and the low-k dielectric. Some of the first repair agent and second repair agent are bonded to the low-k dielectric to form a monolayer of the first repair agent and the second repair agent.
摘要翻译：提供了一种用有机化合物对硅基低k电介质层进行损伤的调谐修复方法，其中损伤用连接到硅上的羟基连接到硅上的甲基代替。提供了前体气体，其包含以Si-（R）x（OR'）y表示的第一修复剂，其中y≥1且x + y = 4，并且其中R是烷基或芳基，R'是烷基或芳基，第二修饰剂以Si-（R）x（OR'）yR“表示，其中y≥1且x + y = 3，并且其中R是烷基或芳基，R'是烷基或芳基，并且R“是降低湿清洁化学品和低k电介质之间的界面表面张力的基团。一些第一修复剂和第二修复剂结合到低k电介质以形成第一修复剂和第二修复剂的单层。

9. 发明授权

US08222155B2 Selectivity control in a plasma processing system 有权
标题翻译：等离子体处理系统中的选择性控制
公开(公告)号：US08222155B2
公开(公告)日：2012-07-17
申请号：US11969833
申请日：2008-01-04
申请人： Kenji Takeshita , Odette Turmel , Felix Kozakevich , Eric Hudson
发明人： Kenji Takeshita , Odette Turmel , Felix Kozakevich , Eric Hudson
IPC分类号： H01L21/302
CPC分类号： H01L21/76811 , H01J37/32706 , H01L21/31116 , H01L21/31144
摘要： A method in a plasma processing system for etching a feature through a given layer on a semiconductor substrate. The method includes placing the substrate in a plasma processing chamber of the plasma processing system. The method also includes flowing an etchant gas mixture into the plasma processing chamber, the etchant gas mixture being configured to etch the given layer. The method additionally includes striking a plasma from the etchant source gas. Furthermore, the method includes etching the feature at least partially through the given layer while applying a bias RF signal to the substrate, the bias RF signal having a bias RF frequency of between about 45 MHz and about 75 MHz. The bias RF signal further has a bias RF power component that is configured to cause the etch feature to be etched with an etch selectivity to a second layer of the substrate that is higher than a predefined selectivity threshold.
摘要翻译：一种用于通过半导体衬底上的给定层蚀刻特征的等离子体处理系统中的方法。该方法包括将基板放置在等离子体处理系统的等离子体处理室中。该方法还包括将蚀刻剂气体混合物流动到等离子体处理室中，蚀刻剂气体混合物被配置为蚀刻给定层。该方法还包括从蚀刻剂源气体冲击等离子体。此外，该方法包括至少部分地通过给定层蚀刻特征，同时向衬底施加偏置RF信号，偏置RF信号具有在约45MHz和约75MHz之间的偏置RF频率。偏置RF信号还具有偏置RF功率分量，该偏置RF功率分量被配置为使得蚀刻特征被蚀刻以对于高于预定义的选择性阈值的衬底的第二层的蚀刻选择性。

10. 发明专利

IL176466D0 SELECTIVITY CONTROL IN A PLASMA PROCESSING SYSTEM 未知
公开(公告)号：IL176466D0
公开(公告)日：2007-07-04
申请号：IL17646606
申请日：2006-06-21
申请人： LAM RES CORP , KENJI TAKESHITA , ODETTE TURMEL , FELIX KOZAKEVICH , ERIC HUDSON
IPC分类号： A61K20100101 , H01L21/311 , H01L21/768
摘要： A method in a plasma processing system for etching a feature through a given layer on a semiconductor substrate. The method includes placing the substrate in a plasma processing chamber of the plasma processing system. The method also includes flowing an etchant gas mixture into the plasma processing chamber, the etchant gas mixture being configured to etch the given layer. The method additionally includes striking a plasma from the etchant source gas. Furthermore, the method includes etching the feature at least partially through the given layer while applying a bias RF signal to the substrate, the bias RF signal having a bias RF frequency of between about 45 MHz and about 75 MHz. The bias RF signal further has a bias RF power component that is configured to cause the etch feature to be etched with an etch selectivity to a second layer of the substrate that is higher than a predefined selectivity threshold.

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