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1. 发明申请

US20070154848A1 Low pH Development Solutions for Chemically Amplified Photoresists 失效
标题翻译：用于化学放大光致抗蚀剂的低pH开发解决方案
公开(公告)号：US20070154848A1
公开(公告)日：2007-07-05
申请号：US11684672
申请日：2007-03-12
申请人： Mark Wagner , James DeYoung , Merrick Miles , Chris Harbinson
发明人： Mark Wagner , James DeYoung , Merrick Miles , Chris Harbinson
IPC分类号： G03C5/00
CPC分类号： G03F7/36 , G03F7/32 , G03F7/325 , G03F7/327
摘要： A method for carrying out positive tone lithography with a carbon dioxide development system is carried out by: (a) providing a substrate, the substrate having a polymer resist layer formed thereon, (b) exposing at least one portion of the polymer resist layer to radiant energy causing a chemical shift to take place in the exposed portion and thereby form at least one light field region in the polymer resist layer while concurrently maintaining at least one portion of the polymer layer unexposed to the radiant energy to thereby form at least one dark field region in the polymer resist layer; (c) optionally baking the polymer resist layer; (d) contacting the polymer resist layer to a carbon dioxide solvent system, the solvent system comprising a polar group, under conditions in which the at least one light field region is preferentially removed from the substrate by the carbon dioxide solvent system as compared to the at least one dark field region; wherein the carbon dioxide solvent system comprises a first phase and a second phase, the first phase comprising carbon dioxide and the second phase comprising a polar fluid, with the at least one light field region being preferentially soluble in the polar fluid as compared to the at least one dark field region.
摘要翻译：通过以下方式进行用二氧化碳显影系统进行正色调光刻的方法：（a）提供衬底，其上形成有聚合物抗蚀剂层的衬底，（b）将至少一部分聚合物抗蚀剂层暴露于导致在暴露部分发生化学位移的辐射能，从而在聚合物抗蚀剂层中形成至少一个光场区域，同时保持聚合物层的至少一部分未暴露于辐射能，从而形成至少一个黑暗聚合物抗蚀剂层中的场区域; （c）任选地烘烤聚合物抗蚀剂层; （d）将所述聚合物抗蚀剂层与二氧化碳溶剂体系接触，所述溶剂体系包含极性基团，其中所述至少一个光场区域优选地通过二氧化碳溶剂系统从所述底物除去，至少一个暗场区域; 其中所述二氧化碳溶剂系统包括第一相和第二相，所述第一相包含二氧化碳，所述第二相包含极性流体，其中所述至少一个光场区域优先溶于极性流体中，与第至少一个暗场区域。

2. 发明授权

US07329483B2 Low pH development solutions for chemically amplified photoresists 失效
标题翻译：用于化学放大光致抗蚀剂的低pH开发解决方案
公开(公告)号：US07329483B2
公开(公告)日：2008-02-12
申请号：US11684672
申请日：2007-03-12
申请人： Mark Wagner , James DeYoung , Merrick Miles , Chris Harbinson
发明人： Mark Wagner , James DeYoung , Merrick Miles , Chris Harbinson
IPC分类号： G03F7/32
CPC分类号： G03F7/36 , G03F7/32 , G03F7/325 , G03F7/327
摘要： A method for carrying out positive tone lithography with a carbon dioxide development system is carried out by: (a) providing a substrate, the substrate having a polymer resist layer formed thereon, (b) exposing at least one portion of the polymer resist layer to radiant energy causing a chemical shift to take place in the exposed portion and thereby form at least one light field region in the polymer resist layer while concurrently maintaining at least one portion of the polymer layer unexposed to the radiant energy to thereby form at least one dark field region in the polymer resist layer; (c) optionally baking the polymer resist layer; (d) contacting the polymer resist layer to a carbon dioxide solvent system, the solvent system comprising a polar group, under conditions in which the at least one light field region is preferentially removed from the substrate by the carbon dioxide solvent system as compared to the at least one dark field region; wherein the carbon dioxide solvent system comprises a first phase and a second phase, the first phase comprising carbon dioxide and the second phase comprising a polar fluid, with the at least one light field region being preferentially soluble in the polar fluid as compared to the at least one dark field region.
摘要翻译：通过以下方式进行用二氧化碳显影系统进行正色调光刻的方法：（a）提供衬底，其上形成有聚合物抗蚀剂层的衬底，（b）将至少一部分聚合物抗蚀剂层暴露于导致在暴露部分发生化学位移的辐射能，从而在聚合物抗蚀剂层中形成至少一个光场区域，同时保持聚合物层的至少一部分未暴露于辐射能，从而形成至少一个黑暗聚合物抗蚀剂层中的场区域; （c）任选地烘烤聚合物抗蚀剂层; （d）将所述聚合物抗蚀剂层与二氧化碳溶剂体系接触，所述溶剂体系包含极性基团，其中所述至少一个光场区域优选地通过二氧化碳溶剂系统从所述底物除去，至少一个暗场区域; 其中所述二氧化碳溶剂系统包括第一相和第二相，所述第一相包含二氧化碳，所述第二相包含极性流体，其中所述至少一个光场区域优先溶于极性流体中，与第至少一个暗场区域。

3. 发明申请

US20060172144A1 Compositions and methods for image development of conventional chemically amplified photoresists 失效
标题翻译：用于常规化学放大光致抗蚀剂的图像显影的组合物和方法
公开(公告)号：US20060172144A1
公开(公告)日：2006-08-03
申请号：US11045791
申请日：2005-01-28
申请人： James DeYoung , Mark Wagner
发明人： James DeYoung , Mark Wagner
IPC分类号： C22C32/00
CPC分类号： G03F7/322 , G03F7/32 , G03F7/325 , G03F7/36 , Y10T428/12486
摘要： Methods for carrying out lithography with a carbon dioxide development system are described. In some embodiments the methods involve preferential removal of a darkfield region; in other embodiments the methds involve preferential removal of a light field region. The carbon dioxide development systems include a quaternary ammonium salt, preferably a quaternary ammonium hydroxide, halide, or carbonate. Compositions for carrying out the methods are also described. The quaternary ammonium salts preferably contain at least one CO2-philic group, such as a siloxane-containing group or a fluorine-containing group.
摘要翻译：描述了用二氧化碳显影系统进行光刻的方法。在一些实施方案中，所述方法涉及优先去除暗区域; 在其他实施例中，方法涉及优先去除光场区域。二氧化碳显影系统包括季铵盐，优选季铵氢氧化物，卤化物或碳酸盐。还描述了用于实施方法的组合物。季铵盐优选含有至少一个CO 2 - 二亲基团，例如含硅氧烷基团或含氟基团。

4. 发明申请

US20050227183A1 Compositions and methods for image development of conventional chemically amplified photoresists 审中-公开
标题翻译：用于常规化学放大光致抗蚀剂的图像显影的组合物和方法
公开(公告)号：US20050227183A1
公开(公告)日：2005-10-13
申请号：US11088171
申请日：2005-03-23
申请人： Mark Wagner , James DeYoung
发明人： Mark Wagner , James DeYoung
IPC分类号： G03C5/00 , G03F7/039 , G03F7/32
CPC分类号： G03F7/0392 , G03F7/322 , G03F7/325
摘要： Methods for carrying out lithography with a carbon dioxide development system are described. This invention involves methods for preferential removal of the darkfield region of conventional chemically amplified positive tone resists. The carbon dioxide development systems include a quaternary ammonium salt, preferably a quaternary ammonium halide, borate, sulfonate, tosylate or carbonate. Compositions for carrying out the methods are also described. The quaternary ammonium salts preferably contain at least one CO2-philic group, such as a siloxane-containing group or a fluorine-containing group.
摘要翻译：描述了用二氧化碳显影系统进行光刻的方法。本发明涉及用于优先除去常规化学放大正性抗蚀剂的暗区域的方法。二氧化碳开发系统包括季铵盐，优选季铵卤化物，硼酸盐，磺酸盐，甲苯磺酸盐或碳酸盐。还描述了用于实施方法的组合物。季铵盐优选含有至少一个CO 2 - 二亲基团，例如含硅氧烷基团或含氟基团。

5. 发明授权

US07648818B2 Compositions and methods for image development of conventional chemically amplified photoresists 失效
标题翻译：用于常规化学放大光致抗蚀剂的图像显影的组合物和方法
公开(公告)号：US07648818B2
公开(公告)日：2010-01-19
申请号：US11348050
申请日：2006-02-06
申请人： Mark Wagner , James DeYoung
发明人： Mark Wagner , James DeYoung
IPC分类号： H01L21/00 , G03C1/00
CPC分类号： G03F7/322
摘要： Methods for carrying out lithography with a carbon dioxide development system are described. This invention involves methods for preferential removal of the darkfield region of conventional chemically amplified positive tone resists. The carbon dioxide development systems include one or more derivatizing agents, which may be an onium salt or a neutral compound.
摘要翻译：描述了用二氧化碳显影系统进行光刻的方法。本发明涉及用于优先除去常规化学放大正性抗蚀剂的暗区域的方法。二氧化碳开发系统包括一种或多种衍生剂，其可以是鎓盐或中性化合物。

6. 发明申请

US20070003864A1 Compositions and methods for image development of conventional chemically amplified photoresists 失效
标题翻译：用于常规化学放大光致抗蚀剂的图像显影的组合物和方法
公开(公告)号：US20070003864A1
公开(公告)日：2007-01-04
申请号：US11348050
申请日：2006-02-06
申请人： Mark Wagner , James DeYoung
发明人： Mark Wagner , James DeYoung
IPC分类号： G03C1/00
CPC分类号： G03F7/322
摘要： Methods for carrying out lithography with a carbon dioxide development system are described. This invention involves methods for preferential removal of the darkfield region of conventional chemically amplified positive tone resists. The carbon dioxide development systems include one or more derivatizing agents, which may be an onium salt or a neutral compound.
摘要翻译：描述了用二氧化碳显影系统进行光刻的方法。本发明涉及用于优先除去常规化学放大正性抗蚀剂的暗区域的方法。二氧化碳开发系统包括一种或多种衍生剂，其可以是鎓盐或中性化合物。

7. 发明授权

US07410751B2 Compositions and methods for image development of conventional chemically amplified photoresists 失效
标题翻译：用于常规化学放大光致抗蚀剂的图像显影的组合物和方法
公开(公告)号：US07410751B2
公开(公告)日：2008-08-12
申请号：US11045791
申请日：2005-01-28
申请人： James DeYoung , Mark Wagner
发明人： James DeYoung , Mark Wagner
IPC分类号： G03C5/18
CPC分类号： G03F7/322 , G03F7/32 , G03F7/325 , G03F7/36 , Y10T428/12486
摘要： Methods for carrying out lithography with a carbon dioxide development system are described. In some embodiments the methods involve preferential removal of a darkfield region; in other embodiments the methds involve preferential removal of a light field region. The carbon dioxide development systems include a quaternary ammonium salt, preferably a quaternary ammonium hydroxide, halide, or carbonate. Compositions for carrying out the methods are also described. The quaternary ammonium salts preferably contain at least one CO2-philic group, such as a siloxane-containing group or a fluorine-containing group.
摘要翻译：描述了用二氧化碳显影系统进行光刻的方法。在一些实施方案中，所述方法涉及优先去除暗区域; 在其他实施例中，方法涉及优先去除光场区域。二氧化碳显影系统包括季铵盐，优选季铵氢氧化物，卤化物或碳酸盐。还描述了用于实施方法的组合物。季铵盐优选含有至少一个CO 2 - 二亲基团，例如含硅氧烷基团或含氟基团。

8. 发明申请

US20050161819A1 Method of treating microelectronic substrates 失效
标题翻译：处理微电子基板的方法
公开(公告)号：US20050161819A1
公开(公告)日：2005-07-28
申请号：US10762905
申请日：2004-01-22
申请人： James DeYoung , James McClain , Stephen Gross , Doug Taylor , Mark Wagner , David Brainard
发明人： James DeYoung , James McClain , Stephen Gross , Doug Taylor , Mark Wagner , David Brainard
IPC分类号： H01L21/288 , H01L21/3205 , H01L21/4763 , H01L21/768 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L21/32051 , H01L21/283 , H01L21/288 , H01L21/76814 , H01L21/76843 , H01L21/76871
摘要： A method of treating a dielectric surface portion of a semiconductor substrate, comprising the steps of: (a) providing a semiconductor substrate having a dielectric surface portion; and then (b) treating said dielectric surface portion with a coating reagent, the coating reagent comprising a reactive group coupled to a coordinating group, with the coordinating group having a metal bound thereto, so that the metal is deposited on the dielectric surface portion to produce a surface portion treated with a metal.
摘要翻译：一种处理半导体衬底的电介质表面部分的方法，包括以下步骤：（a）提供具有电介质表面部分的半导体衬底; 然后（b）用涂层试剂处理所述电介质表面部分，所述涂覆试剂包含与配位基团偶联的反应基团，所述配位基团与其结合金属，使得金属沉积在电介质表面部分上产生用金属处理的表面部分。

9. 发明申请

US20060035014A1 Method of coating microelectronic substrates 失效
公开(公告)号：US20060035014A1
公开(公告)日：2006-02-16
申请号：US11261299
申请日：2005-10-28
申请人： James DeYoung , James McClain , Stephen Gross , Doug Taylor , Mark Wagner , David Brainard
发明人： James DeYoung , James McClain , Stephen Gross , Doug Taylor , Mark Wagner , David Brainard
IPC分类号： B05D5/12
CPC分类号： H01L21/283 , B05D1/18 , B05D2401/90 , H01L21/28556 , H01L21/288 , H01L21/67028 , H01L28/65
摘要： A method of coating a substrate comprises the steps of: (a) providing a substrate in an enclosed vessel, the substrate having a surface portion; (b) at least partially filling the enclosed vessel with a first supercritical fluid so that said first supercritical fluid contacts the surface portion, with the first supercritical fluid carrying or containing a coating component; then (c) adding a separate compressed gas atmosphere to the reaction vessel so that a boundary is formed between the first supercritical fluid and the separate compressed gas atmosphere, said separate compressed gas atmosphere having a density less than said first supercritical fluid; and then (d) displacing said first supercritical fluid from said vessel by continuing adding said separate compressed gas atmosphere to said vessel so that said boundary moves across said surface portion and a thin film of coating component is deposited on said microelectronic substrate.

10. 发明申请

US20130006351A1 POLYMER COATINGS CONTAINING DRUG POWDER OF CONTROLLED MORPHOLOGY 有权
公开(公告)号：US20130006351A1
公开(公告)日：2013-01-03
申请号：US13605904
申请日：2012-09-06
申请人： Doug Taylor , Jim McClain , Clint Smoke , Mike Cole , James DeYoung
发明人： Doug Taylor , Jim McClain , Clint Smoke , Mike Cole , James DeYoung
IPC分类号： A61F2/06 , A61P3/10 , A61P29/00 , A61P9/12 , A61P1/04 , A61K38/02 , A61K38/43 , A61P25/16 , A61K31/551 , A61K31/436 , B32B5/00 , B32B27/30 , B32B27/32 , B32B27/40 , B32B27/36 , B32B27/00 , A61K9/00
CPC分类号： A61F2/82 , A61F2210/0076 , A61F2250/0067 , A61L31/10 , A61L31/16 , A61L2300/416 , A61L2300/426 , A61L2300/606 , A61L2300/63 , A61L2420/08 , Y10T428/264 , Y10T428/265 , Y10T428/31507 , Y10T428/31544 , Y10T428/31551 , Y10T428/31663 , Y10T428/31786 , Y10T428/31935 , Y10T428/31938
摘要： A method for depositing a coating comprising a polymer and pharmaceutical agent on a substrate, comprising the following steps: discharging at least one pharmaceutical agent in a therapeutically desirable morphology in dry powder form through a first orifice; discharging at least one polymer in dry powder form through a second orifice; depositing the polymer and/or pharmaceutical particles onto said substrate, wherein an electrical potential is maintained between the substrate and the pharmaceutical and/or polymer particles, thereby forming said coating; and sintering said coating under conditions that do not substantially modify the morphology of said pharmaceutical agent.

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