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1. 发明授权

US07256399B2 Non-destructive in-situ elemental profiling 失效
标题翻译：非破坏性原位元素分析
公开(公告)号：US07256399B2
公开(公告)日：2007-08-14
申请号：US10907591
申请日：2005-04-07
申请人： Siddhartha Panda , Michael R. Sievers , Richard S. Wise
发明人： Siddhartha Panda , Michael R. Sievers , Richard S. Wise
IPC分类号： G01N23/227
CPC分类号： G01N23/2273
摘要： A non-destructive in-situ elemental profiling of a layer in a set of layers method and system are disclosed. In one embodiment, a first emission of a plurality of photoelectrons is caused from the layer to be elementally profiled. An elemental profile of the layer is determined based on the emission. In another embodiment, a second emission of a plurality of photoelectrons is also received from the layer, and an elemental profile is determined by comparison of the resulting signals. A process that is altering the layer can then be controlled “on-the-fly” to obtain a desired material composition. Since the method can be employed in-situ and is non-destructive, it reduces turn around time and lowers wafer consumption. The invention also records the composition of all processed wafers, hence, removing the conventional statistical sampling problem.
摘要翻译：公开了一组层中的层的非破坏性原位元素分析方法和系统。在一个实施例中，多个光电子的第一次发射是从该层进行元素分析。基于发射确定层的元素分布。在另一个实施例中，也从该层接收多个光电子的第二次发射，并且通过比较所得到的信号来确定元素分布。然后可以“即时”控制改变层的方法以获得所需的材料组成。由于该方法可以原位使用并且是非破坏性的，所以可以减少周转时间并降低晶片消耗。本发明还记录了所有加工晶片的组成，因此，去除了常规统计抽样问题。

2. 发明授权

US07285775B2 Endpoint detection for the patterning of layered materials 有权
标题翻译：分层材料图案化的端点检测
公开(公告)号：US07285775B2
公开(公告)日：2007-10-23
申请号：US10904883
申请日：2004-12-02
申请人： Michael R. Sievers , Siddhartha Panda , Richard Wise
发明人： Michael R. Sievers , Siddhartha Panda , Richard Wise
IPC分类号： G01N23/227
CPC分类号： G01N23/227 , H01L22/26
摘要： Photoelectron emissions are used to detect an endpoint of a thickness alteration of a topmost layer in a set of layers undergoing patterning. The set of layers are irradiated, which causes an emission of photoelectrons. Upon receipt of or absence of a photoelectron emission, patterning endpoint is detected.
摘要翻译：光电子发射用于检测经历图案化的一组层中最上层的厚度变化的端点。该层被照射，这导致光电子的发射。在接收到或不存在光电子发射时，检测到图案化端点。

3. 发明申请

US20080078743A1 ELEVATED TEMPERATURE CHEMICAL OXIDE REMOVAL MODULE AND PROCESS 审中-公开
标题翻译：高温化学氧化物去除模块和工艺
公开(公告)号：US20080078743A1
公开(公告)日：2008-04-03
申请号：US11536388
申请日：2006-09-28
申请人： Andres F. Munoz , Siddhartha Panda , Michael R. Sievers , Richard Wise
发明人： Andres F. Munoz , Siddhartha Panda , Michael R. Sievers , Richard Wise
IPC分类号： C03C25/68 , B44C1/22 , C23F1/00
CPC分类号： H01L21/67248 , H01L21/02057
摘要： A temperature-controlled substrate holder having a high temperature substrate chuck is mounted within a chemical treatment chamber. The temperature-controlled substrate holder secures a substrate and maintains the substrate at a temperature that ranges from about 10° C. up to about 150° C. during execution of a chemical oxide removal process.
摘要翻译：具有高温基板卡盘的温度控制的基板保持器安装在化学处理室内。温度控制的衬底保持器固定衬底并且在执行化学氧化物去除过程期间将衬底维持在约10℃至约150℃的温度。

4. 发明授权

US07278300B2 Gas filled reactive atomic force microscope probe 失效
标题翻译：充气反应原子力显微镜探针
公开(公告)号：US07278300B2
公开(公告)日：2007-10-09
申请号：US11162958
申请日：2005-09-29
申请人： Michael R. Sievers , Siddhartha Panda , Richard Wise
发明人： Michael R. Sievers , Siddhartha Panda , Richard Wise
IPC分类号： G01B5/28
CPC分类号： G01Q60/38
摘要： An atomic force microscope (AFM) having a hollowed cantilever ending in a hollowed tip is described, wherein the end of the tip is immersed in a liquid. The AFM includes a gas source that provides and controls the flow of gas into the hollowed tip. The flow rate of the gas is regulated to form and sustain a static bubble at the end of the hollowed tip. The formation of the static bubble is verified optically. A gas control manifold allows an easy switch of gasses that are fed into the probe tip. The gas that is introduced acts like a chemically modified tip, and is selected to increase the deflection signal for the material of interest. The tip of the present invention is a highly versatile AFM tool that is easily adjusted to provide optimized imaging for a wide variety of materials, in contrast with standard AFMs that require a plethora of chemically modified tips to obtain equivalent results. Moreover, there is a much lower propensity for the tip to damage the sample or to be damaged from inadvertent contact with the surface of the sample.
摘要翻译：描述了一种具有终止在中空尖端中的中空悬臂的原子力显微镜（AFM），其中尖端的端部浸入液体中。 AFM包括提供和控制气体进入中空尖端的气体源。调节气体的流速以在中空末端的端部形成并维持静止气泡。静态气泡的形成被光学验证。气体控制歧管允许容易地切换进入探针尖端的气体。被引入的气体类似于化学改性的尖端，并且被选择以增加感兴趣的材料的偏转信号。本发明的尖端是一种高度通用性的AFM工具，其易于调节以为各种材料提供优化的成像，与需要大量化学修饰的尖端以获得等效结果的标准AFM相反。此外，尖端损坏样品或由于与样品表面无意接触而损坏的倾向低得多。

5. 发明授权

US07645356B2 Method of processing wafers with resonant heating 失效
标题翻译：用共振加热处理晶片的方法
公开(公告)号：US07645356B2
公开(公告)日：2010-01-12
申请号：US10721657
申请日：2003-11-25
申请人： Siddhartha Panda , Richard S. Wise
发明人： Siddhartha Panda , Richard S. Wise
IPC分类号： C23F1/00
CPC分类号： H01J37/32339 , H01L21/3065 , H01L21/32136
摘要： A method of etching a wafer using resonant infrared energy and a filter to control non-uniformities during plasma etch processing. The filter includes a predetermined array or stacked arrangement of variable transmission regions that mirror the spatial etch distortions caused by the plasma etching process. By spatially attenuating the levels of IR energy that reach the wafer, the filter improves uniformity in the etching process. Filters may be designed to compensate for edge fast etching due to macro-loading, asymmetric pumping in a plasma chamber, and magnetic field cusping.
摘要翻译：使用谐振红外能量蚀刻晶片的方法和用于在等离子体蚀刻处理期间控制不均匀性的滤光器。滤波器包括可反映由等离子体蚀刻工艺引起的空间蚀刻失真的可变透射区域的预定阵列或堆叠布置。通过空间衰减到达晶片的IR能量的水平，滤波器改善了蚀刻工艺中的均匀性。滤波器可以被设计为补偿由于宏载荷，等离子体室中的不对称泵浦和磁场冲击造成的边缘快速蚀刻。

6. 发明申请

US20090104776A1 METHODS FOR FORMING NESTED AND ISOLATED LINES IN SEMICONDUCTOR DEVICES 审中-公开
标题翻译：在半导体器件中形成嵌套和隔离线的方法
公开(公告)号：US20090104776A1
公开(公告)日：2009-04-23
申请号：US11874392
申请日：2007-10-18
申请人： David M. Dobuzinsky , Johnathan E. Faltermeier , Naoyoshi Kusaba , Joyce C. Liu , Munir D. Naeem , Siddhartha Panda , Richard S. Wise , Hongwen Yan
发明人： David M. Dobuzinsky , Johnathan E. Faltermeier , Naoyoshi Kusaba , Joyce C. Liu , Munir D. Naeem , Siddhartha Panda , Richard S. Wise , Hongwen Yan
IPC分类号： H01L21/4763
CPC分类号： H01L21/76838 , H01L21/0337 , H01L21/0338 , H01L21/32137 , H01L21/32139
摘要： A method for forming lines for semiconductor devices including, depositing a shallow trench isolation (STI) film stack on a silicon substrate, depositing a layer of polysilicon on the STI film stack, depositing a layer of antireflective coating on the layer of polysilicon, developing a phototoresist on the antireflective coating, wherein the photoresist defines a line, etching the layer of antireflective coating and the layer of polysilicon using RIE with a low bias power, removing the photoresist, removing the layer of antireflective coating, etching the STI film stack to form the line, wherein the layer of polysilicon further defines the line.
摘要翻译：一种用于形成用于半导体器件的线的方法，包括：在硅衬底上沉积浅沟槽隔离（STI）膜堆叠，在所述STI膜堆叠上沉积多晶硅层，在所述多晶硅层上沉积一层抗反射涂层，在抗反射涂层上光致抗蚀剂，其中光致抗蚀剂限定线，使用具有低偏压功率的RIE蚀刻抗反射涂层和多晶硅层，去除光致抗蚀剂，去除抗反射涂层，蚀刻STI膜叠层以形成所述线，其中所述多晶硅层进一步限定所述线。

7. 发明授权

US07186660B2 Silicon precursors for deep trench silicon etch processes 失效
标题翻译：用于深沟槽硅蚀刻工艺的硅前体
公开(公告)号：US07186660B2
公开(公告)日：2007-03-06
申请号：US10338964
申请日：2003-01-08
申请人： Siddhartha Panda , Richard S. Wise
发明人： Siddhartha Panda , Richard S. Wise
IPC分类号： H01L21/302
CPC分类号： H01L21/3065 , H01L27/10861
摘要： The present invention relates to etch chemistry and methods for the etching of silicon substrates. The method is particularly useful for deep trench etching of silicon substrates and produces a trench having a high aspect ratio. In this type of deep trench etching, control of the profile of the trench is addressed by the etch chemistry disclosed herein. The etchant described in the present invention comprises silicon and a halogen component, and may be gaseous, liquid or solid. The etchant disclosed is also substantially free of hydrogen and carbon.
摘要翻译：本发明涉及用于蚀刻硅衬底的蚀刻化学和方法。该方法对于硅衬底的深沟槽蚀刻特别有用，并且产生具有高纵横比的沟槽。在这种类型的深沟槽蚀刻中，通过本文公开的蚀刻化学处理对沟槽轮廓的控制。本发明中描述的蚀刻剂包括硅和卤素组分，并且可以是气态，液态或固体。所公开的蚀刻剂也基本上不含氢和碳。

8. 发明申请

US20080118955A1 METHOD FOR PRECISE TEMPERATURE CYCLING IN CHEMICAL / BIOCHEMICAL PROCESSES 审中-公开
标题翻译：化学/生化过程中精确循环的方法
公开(公告)号：US20080118955A1
公开(公告)日：2008-05-22
申请号：US11858280
申请日：2007-09-20
申请人： Siddhartha Panda , Richard S. Wise
发明人： Siddhartha Panda , Richard S. Wise
IPC分类号： C12P19/34 , B01J19/12
CPC分类号： C12Q1/686 , B01L7/52 , B01L7/5255 , B01L2300/1872 , C12Q2523/313
摘要： A method for implementing a temperature cycling operation for a biochemical sample to be reacted includes applying an infrared (IR) heating source to the biochemical sample to be reacted at a first infrared wavelength selected so as to generate a first desired temperature for a first duration and produce a first desired reaction within the biochemical sample; following the first desired reaction, applying the infrared (IR) heating source to the biochemical sample at a second infrared wavelength selected so as to generate a second desired temperature for a second duration and produce a second desired reaction within the biochemical sample; and wherein the first and second wavelengths generated by the IR source are selected to be coincident with corresponding absorptive wavelengths of the biochemical sample so as to heat the biochemical sample without directly heating a fluid medium containing the biochemical sample.
摘要翻译：用于实施待反应的生物化学样品的温度循环操作的方法包括将红外（IR）加热源施加到生物化学样品以在被选择的第一红外波长处反应，以便产生第一期望的第一期望温度，以及在生物化学样品中产生第一个所需的反应; 在第一期望的反应之后，以选择的第二红外波长将红外（IR）加热源施加到生物化学样品，以产生第二期望的第二期望温度，并在生化试样中产生第二所需反应; 并且其中由IR源产生的第一和第二波长被选择为与生物化学样品的相应吸收波长一致，以便加热生化样品而不直接加热含有生物化学样品的流体介质。

9. 发明授权

US07687829B2 Stressed field effect transistors on hybrid orientation substrate 失效
标题翻译：混合取向衬底上强调场效应晶体管
公开(公告)号：US07687829B2
公开(公告)日：2010-03-30
申请号：US12144250
申请日：2008-06-23
申请人： Dureseti Chidambarrao , Judson R. Holt , Meikei Ieong , Qiqing C. Ouyang , Siddhartha Panda
发明人： Dureseti Chidambarrao , Judson R. Holt , Meikei Ieong , Qiqing C. Ouyang , Siddhartha Panda
IPC分类号： H01L29/04
CPC分类号： H01L29/045 , H01L21/823807 , H01L29/7843
摘要： A semiconductor structure having improved carrier mobility is provided. The semiconductor structures includes a hybrid oriented semiconductor substrate having at least two planar surfaces of different crystallographic orientation, and at least one CMOS device located on each of the planar surfaces of different crystallographic orientation, wherein each CMOS device has a stressed channel. The present invention also provides methods of fabricating the same. In general terms, the inventive method includes providing a hybrid oriented substrate having at least two planar surfaces of different crystallographic orientation, and forming at least one CMOS device on each of the planar surfaces of different crystallographic orientation, wherein each CMOS device has a stressed channel.
摘要翻译：提供了具有改进的载流子迁移率的半导体结构。半导体结构包括具有不同晶体取向的至少两个平坦表面的混合取向半导体衬底，以及位于不同结晶取向的每个平面上的至少一个CMOS器件，其中每个CMOS器件具有应力通道。本发明还提供了制造该方法的方法。一般来说，本发明的方法包括提供具有至少两个具有不同晶体取向的平面表面的混合取向衬底，以及在不同结晶取向的每个平面上形成至少一个CMOS器件，其中每个CMOS器件具有受压沟道。

10. 发明申请

US20080179627A1 Strained MOS devices using source/drain epitaxy 有权
标题翻译：使用源极/漏极外延的应变MOS器件
公开(公告)号：US20080179627A1
公开(公告)日：2008-07-31
申请号：US11669902
申请日：2007-01-31
申请人： Meikei Ieong , Xiao Hu Liu , Qiqing Christine Ouyang , Siddhartha Panda , Haizhou Yin
发明人： Meikei Ieong , Xiao Hu Liu , Qiqing Christine Ouyang , Siddhartha Panda , Haizhou Yin
IPC分类号： H01L27/092 , H01L21/8238
CPC分类号： H01L21/823807 , H01L21/823814 , H01L21/84 , H01L29/1054 , H01L29/165 , H01L29/66636 , H01L29/7848 , H01L29/78687
摘要： NMOS and PMOS device structures with separately strained channel regions and methods of their fabrication are disclosed. The source and the drain of the NMOS device is epitaxially grown of a material which causes a shift in the strain of the NMOS device channel in the tensile direction. While, the source and the drain of the PMOS device is epitaxially grown of a material which causes a shift in the strain of the PMOS device channel in the compressive direction.
摘要翻译：公开了具有单独应变通道区域的NMOS和PMOS器件结构及其制造方法。 NMOS器件的源极和漏极由引起NMOS器件沟道在拉伸方向上的应变移动的材料外延生长。而PMOS器件的源极和漏极是外延生长的，这种材料导致PMOS器件沟道在压缩方向上的应变移动。

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