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1. 发明授权

US07381344B1 Method to reduce particle level for dry-etch 有权
标题翻译：降低干法蚀刻的粒子水平的方法
公开(公告)号：US07381344B1
公开(公告)日：2008-06-03
申请号：US09310256
申请日：1999-05-12
申请人： Sheng-Chi Chin , Shy-Jay Lin
发明人： Sheng-Chi Chin , Shy-Jay Lin
IPC分类号： B44C1/22
CPC分类号： H01J37/321 , H01J37/32862 , Y10S438/905
摘要： The invention teaches a multi-step method for shutting down the dry-etch process. The ICP rf power is reduced between each of these consecutive power-down steps of the dry-etch process, the complete power-down sequence consists of six steps. These six steps are executed in sequence and without interruption and form the totality of the dry-etch chamber power-down procedure.
摘要翻译：本发明教导了一种用于关闭干蚀刻工艺的多步骤方法。在干蚀刻工艺的这些连续断电步骤中的每一个之间，ICP rf功率减小，完整的掉电序列由六个步骤组成。这六个步骤依次执行并且不间断地形成干蚀刻室掉电过程的总体。

2. 发明授权

US06428938B1 Phase-shift mask for printing high-resolution images and a method of fabrication 有权
标题翻译：用于打印高分辨率图像的相移掩模和制造方法
公开(公告)号：US06428938B1
公开(公告)日：2002-08-06
申请号：US09596900
申请日：2000-06-19
申请人： Chin-Hsiang Lin , Shy-Jay Lin , Sheng-Chi Chin , Wei-Zen Chou
发明人： Chin-Hsiang Lin , Shy-Jay Lin , Sheng-Chi Chin , Wei-Zen Chou
IPC分类号： G03F900
CPC分类号： G03F1/30
摘要： An improved phase-shift photomask and method of fabrication are described. The method for making this phase-shift mask involves depositing an opaque film, such as chromium (Cr), on a transparent plate, such as SiO2 (quartz plate). An electron beam photoresist layer is deposited on the Cr film and is partially exposed in regions A and completely exposed in closely spaced alternate regions B by an electron beam. The exposed photoresist is then developed. The Cr film is etched in regions B while the remaining resist in regions A protect the Cr from etching. The e-bean resist is plasma etched back to remove the resist over regions A and then the quartz plate in regions B is recessed to a depth d by plasma etching while the Cr protects the quartz in regions A from etching. The recess is etched to a depth to provide an optical path difference between A and B of ½ wavelength (180°) when UV light is transmitted through the mask to expose resist on a product substrate. This 180° phase-shift minimizes the diffracted light under the Cr film between regions A and B and improves the DOF and therefore the photoresist resolution. Since a single e-beam resist is used to make the mask it is more manufacturing cost effective with improved alignment accuracy between regions A and B.
摘要翻译：描述了改进的相移光掩模和制造方法。制造该相移掩模的方法包括在诸如SiO 2（石英板）的透明板上沉积不透明的膜，例如铬（Cr）。电子束光致抗蚀剂层沉积在Cr膜上，并部分暴露在区域A中，并通过电子束完全暴露在紧密间隔的交替区域B中。然后曝光的光刻胶显影。在区域B中蚀刻Cr膜，而区域A中的剩余抗蚀剂保护Cr不被蚀刻。等离子体蚀刻回蚀刻e-bean抗蚀剂以去除区域A上的抗蚀剂，然后通过等离子体蚀刻将区域B中的石英板凹入深度d，同时Cr保护区域A中的石英免受蚀刻。当UV光通过掩模透射以暴露产品基底上的抗蚀剂时，凹陷被蚀刻到深度以提供½波长（180°）的A和B之间的光程差。这种180°相移使区域A和B之间的Cr膜下的衍射光最小化，并且改善了DOF并因此改善了光刻胶分辨率。由于使用单个电子束抗蚀剂来制造掩模，因此在区域A和区域B之间具有改善的对准精度是更具制造成本效益的。

3. 发明授权

US06599665B1 Method of making a semiconductor wafer imaging mask having uniform pattern features 有权
标题翻译：制造具有均匀图案特征的半导体晶片成像掩模的方法
公开(公告)号：US06599665B1
公开(公告)日：2003-07-29
申请号：US09686099
申请日：2000-10-10
申请人： Shy-Jay Lin , Sheng-Chi Chin
发明人： Shy-Jay Lin , Sheng-Chi Chin
IPC分类号： G03F900
CPC分类号： G03F1/78 , G03F1/36 , G03F1/80 , G03F7/30
摘要： A mask used to image circuit patterns onto a semiconductor wafer exhibits improved uniformity of critical feature dimensions. A pattern of dummy features is formed around the outer periphery of the main pattern during manufacture of the mask. The presence of the dummy field eliminates loading of the etch rate at the marginal areas of the main pattern, thereby assuring that all of the features in the main pattern field are etched at substantially the same rate. By using differing radiation dosages to expose the photoresist employed to form the main pattern and dummy patterns, a thickness of the photoresist remains over the dummy field pattern after development of the photoresist. This remaining photoresist has a thickness sufficient to prevent subsequent etching of the underlying metal which would otherwise leave features in the metal layer that would be imaged onto the wafer.
摘要翻译：用于将电路图案成像到半导体晶片上的掩模表现出改进的关键特征尺寸的均匀性。在制造掩模期间，在主图案的外周围形成虚拟特征图案。虚拟场的存在消除了在主图案的边缘区域处的蚀刻速率的加载，从而确保主图案场中的所有特征以基本相同的速率被蚀刻。通过使用不同的辐射剂量来暴露用于形成主图案和虚设图案的光致抗蚀剂，在光致抗蚀剂显影之后，光致抗蚀剂的厚度保留在伪场图案上。该剩余的光致抗蚀剂具有足以防止随后蚀刻下面的金属的厚度，否则将会残留在将被成像到晶片上的金属层中的特征。

4. 发明授权

US09134627B2 Multiple-patterning overlay decoupling method 有权
标题翻译：多图案叠加去耦方法
公开(公告)号：US09134627B2
公开(公告)日：2015-09-15
申请号：US13328264
申请日：2011-12-16
申请人： Wen-Chuan Wang , Shy-Jay Lin , Pei-Yi Liu , Jaw-Jung Shin , Burn Jeng Lin
发明人： Wen-Chuan Wang , Shy-Jay Lin , Pei-Yi Liu , Jaw-Jung Shin , Burn Jeng Lin
IPC分类号： H01L21/66 , G03F7/20 , H01L23/544
CPC分类号： G03F7/70633 , H01L23/544 , H01L2223/5442 , H01L2223/54426 , H01L2223/54453 , H01L2223/5446 , H01L2924/0002 , H01L2924/00
摘要： A method for fabricating a semiconductor device is disclosed. An exemplary method includes forming a first structure in a first layer by a first exposure and determining placement information of the first structure. The method further includes forming a second structure in a second layer overlying the first layer by a second exposure and determining placement information of the second structure. The method further includes forming a third structure including first and second substructures in a third layer overlying the second layer by a third exposure. Forming the third structure includes independently aligning the first substructure to the first structure and independently aligning the second substructure to the second structure.
摘要翻译：公开了一种制造半导体器件的方法。一种示例性方法包括通过第一曝光在第一层中形成第一结构并确定第一结构的放置信息。该方法还包括通过第二曝光在覆盖第一层的第二层中形成第二结构，并确定第二结构的放置信息。该方法还包括在第三层中形成第三结构，该第三结构包括通过第三次曝光覆盖第二层的第三层中的第一和第二子结构。形成第三结构包括将第一子结构独立地对准第一结构并且将第二子结构独立地对准到第二结构。

5. 发明授权

US08510687B1 Error diffusion and grid shift in lithography 有权
标题翻译：光刻中的误差扩散和栅格位移
公开(公告)号：US08510687B1
公开(公告)日：2013-08-13
申请号：US13409765
申请日：2012-03-01
申请人： Pei-Yi Liu , Shy-Jay Lin , Wen-Chuan Wang , Jaw-Jung Shin , Burn Jeng Lin
发明人： Pei-Yi Liu , Shy-Jay Lin , Wen-Chuan Wang , Jaw-Jung Shin , Burn Jeng Lin
IPC分类号： G06F17/50
CPC分类号： G03F1/36
摘要： The present disclosure involves a method of data preparation in lithography processes. The method of data preparation includes providing an integrated circuit (IC) layout design in a graphic database system (GDS) grid, and converting the IC layout design GDS grid to a second exposure grid by applying an error diffusion and a grid shift technique to a sub-pixel exposure grid.
摘要翻译：本公开涉及在光刻工艺中的数据准备方法。数据准备的方法包括在图形数据库系统（GDS）网格中提供集成电路（IC）布局设计，并且通过向第二曝光网格应用误差扩散和网格移位技术将IC布局设计GDS网格转换为第二曝光网格子像素曝光网格。

6. 发明申请

US20130157389A1 Multiple-Patterning Overlay Decoupling Method 有权
标题翻译：多重图案叠加去耦方法
公开(公告)号：US20130157389A1
公开(公告)日：2013-06-20
申请号：US13328264
申请日：2011-12-16
申请人： Wen-Chuan Wang , Shy-Jay Lin , Pei-Yi Liu , Jaw-Jung Shin , Burn Jeng Lin
发明人： Wen-Chuan Wang , Shy-Jay Lin , Pei-Yi Liu , Jaw-Jung Shin , Burn Jeng Lin
IPC分类号： H01L21/66
CPC分类号： G03F7/70633 , H01L23/544 , H01L2223/5442 , H01L2223/54426 , H01L2223/54453 , H01L2223/5446 , H01L2924/0002 , H01L2924/00
摘要： A method for fabricating a semiconductor device is disclosed. An exemplary method includes forming a first structure in a first layer by a first exposure and determining placement information of the first structure. The method further includes forming a second structure in a second layer overlying the first layer by a second exposure and determining placement information of the second structure. The method further includes forming a third structure including first and second substructures in a third layer overlying the second layer by a third exposure. Forming the third structure includes independently aligning the first substructure to the first structure and independently aligning the second substructure to the second structure
摘要翻译：公开了一种制造半导体器件的方法。一种示例性方法包括通过第一曝光在第一层中形成第一结构并确定第一结构的放置信息。该方法还包括通过第二曝光在覆盖第一层的第二层中形成第二结构，并确定第二结构的放置信息。该方法还包括在第三层中形成第三结构，该第三结构包括通过第三次曝光覆盖第二层的第三层中的第一和第二子结构。形成第三结构包括将第一子结构独立地对准第一结构并且将第二子结构独立地对准到第二结构

7. 发明授权

US07796249B2 Mask haze early detection 有权
标题翻译：面罩雾霭早期检测
公开(公告)号：US07796249B2
公开(公告)日：2010-09-14
申请号：US11866514
申请日：2007-10-03
申请人： Wen-Chuan Wang , Shy-Jay Lin , Te-Chih Huang , Chih-Ming Ke , Wei-Yu Su , Heng-Hsin Liu , Tsai-Sheng Gau , Chin-Hsiang Lin
发明人： Wen-Chuan Wang , Shy-Jay Lin , Te-Chih Huang , Chih-Ming Ke , Wei-Yu Su , Heng-Hsin Liu , Tsai-Sheng Gau , Chin-Hsiang Lin
IPC分类号： G01N21/00
CPC分类号： G03F1/84 , G03F1/82
摘要： Detecting haze formation on a mask by obtaining an optical property of the mask and determining progress of the haze formation based on the obtained optical property.
摘要翻译：通过获得掩模的光学特性并基于获得的光学性质来确定雾度形成的进展来检测掩模上的雾度形成。

8. 发明申请

US20090268184A1 System and Method for Direct Writing to a Wafer 有权
标题翻译：直接写入晶片的系统和方法
公开(公告)号：US20090268184A1
公开(公告)日：2009-10-29
申请号：US12203494
申请日：2008-09-03
申请人： Burn Jeng Lin , Jeng-Horng Chen , Shy-Jay Lin , Tsai-Sheng Gau
发明人： Burn Jeng Lin , Jeng-Horng Chen , Shy-Jay Lin , Tsai-Sheng Gau
IPC分类号： G03B27/54
CPC分类号： G03F7/70383 , B82Y10/00 , B82Y40/00 , H01J37/3174
摘要： A direct-write (DW) exposure system is provided which includes a stage for holding a substrate and configured to scan the substrate along an axis during exposure, a data processing module for processing pattering data and generating instructions associated with the patterning data, and an exposure module that includes a plurality of beams that are focused onto the substrate such that the beams cover a width that is larger than a width of a field size and a beam controller that controls the plurality of beams in accordance with the instructions as the substrate is scanned along the axis. The widths are in a direction different from the axis.
摘要翻译：提供了一种直接写入（DW）曝光系统，其包括用于保持衬底并被配置为在曝光期间沿着轴扫描衬底的台，用于处理图案数据并产生与图案形成数据相关联的指令的数据处理模块，以及曝光模块，其包括聚焦在基板上的多个光束，使得光束覆盖大于场大小的宽度的宽度;以及根据作为衬底的指令来控制多个光束的光束控制器沿轴扫描。宽度在与轴不同的方向。

9. 发明授权

US06799312B1 Dark line CD and XY-CD improvement method of the variable shaped beam lithography in mask or wafer making 有权
标题翻译：可变形光束光刻在掩模或晶圆制造中的暗线CD和XY-CD改进方法
公开(公告)号：US06799312B1
公开(公告)日：2004-09-28
申请号：US09584428
申请日：2000-06-05
申请人： Fei-Gwo Tsai , Shy-Jay Lin
发明人： Fei-Gwo Tsai , Shy-Jay Lin
IPC分类号： G06F1750
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/31762 , H01J2237/31764
摘要： This invention provides a method of using an electron beam exposure system having an electron beam with a variable shape to form patterns in a layer of resist on a substrate, a mask substrate or an integrated circuit wafer, while maintaining adequate critical dimension control and beam stability. This is accomplished by setting the electron beam to a fixed square beam with a width set to provide optimum XY critical dimension control for exposing a frame pattern surrounding the original pattern. The frame pattern has a width of a first distance and surrounds the outer perimeter of the original pattern. This provides optimum XY critical dimension control at the outer perimeter of the original pattern. The remainder of the exposure field, which is the exposure field with the original pattern and the frame pattern subtracted away is exposed using an electron beam having a variable size and shape. In one embodiment the exposure of the frame pattern is completed before the exposure of the remainder pattern is carried out. Alternatively, the exposure of the remainder pattern can be completed before the exposure of the frame pattern is carried out. The digital design data for the frame pattern and the remainder of the exposure field is formed using a computer processor and the original design data.
摘要翻译：本发明提供一种使用具有可变形状的电子束的电子束曝光系统的方法，以在基板，掩模基板或集成电路晶片上的抗蚀剂层中形成图案，同时保持适当的临界尺寸控制和光束稳定性。这是通过将电子束设置为具有设置的宽度的固定方波来实现的，以提供用于曝光围绕原始图案的帧图案的最佳XY临界尺寸控制。框架图案具有第一距离的宽度并且围绕原始图案的外周边。这在原始图案的外围提供了最佳的XY临界尺寸控制。使用具有可变尺寸和形状的电子束来曝光曝光场的剩余部分，其中原始图案和帧图案的曝光场被减去。在一个实施例中，在执行余下图案的曝光之前完成帧图案的曝光。或者，可以在执行帧图案的曝光之前完成余数图案的曝光。使用计算机处理器和原始设计数据形成帧图案的数字设计数据和曝光场的其余部分。

10. 发明授权

US6018392A Apparatus and method for inspecting phase shifting masks 有权
标题翻译：用于检查相移掩模的装置和方法
公开(公告)号：US6018392A
公开(公告)日：2000-01-25
申请号：US177340
申请日：1998-10-23
申请人： San-De Tzu , Shy-Jay Lin
发明人： San-De Tzu , Shy-Jay Lin
IPC分类号： G01N21/956 , G03F1/26 , G03F1/84 , G01B9/02
CPC分类号： G03F1/84 , G01N21/95607 , G03F1/26
摘要： An apparatus for die to die inspection of masks having transparent phase shifting elements and a method of die to die inspection of masks having transparent phase shifting elements. Light from a light source is directed through a transparent mask substrate and a phase shifting mask element to a first objective lens, and through the transparent mask substrate and another phase shifting mask element to a second objective lens. Light from the first objective lens is then given a 180.degree. phase shift by a phase adjustment unit. Light from the phase adjustment unit and the second objective lens is combined at a split mirror and directed to a detector. The method makes use of the fact that the intensity of the light at the detector is proportional to the square of the cosine of one half of the phase angle between the light from the phase adjusting unit and light from the second objective lens. If the intensity of light reaching the detector is not zero, or very small, the mask has a defect.
摘要翻译：一种用于对具有透明相移元件的掩模进行裸片检查的设备，以及对具有透明移相元件的掩模进行裸片检查的方法。来自光源的光通过透明掩模基板和相移掩模元件引导到第一物镜，并且通过透明掩模基板和另一相移掩模元件引导到第二物镜。然后通过相位调整单元对来自第一物镜的光进行180°相移。来自相位调整单元和第二物镜的光在分离镜处组合并被引导到检测器。该方法利用了检测器的光强度与来自相位调整单元的光和来自第二物镜的光之间的相位角的一半的余弦平方成正比的事实。如果到达检测器的光的强度不为零或非常小，则掩模具有缺陷。

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