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1. 发明授权

US10141120B2 Power storage system and manufacturing method thereof and secondary battery and capacitor 有权
公开(公告)号：US10141120B2
公开(公告)日：2018-11-27
申请号：US13033877
申请日：2011-02-24
申请人： Shunpei Yamazaki , Tamae Moriwaka , Kazutaka Kuriki , Mikio Yukawa
发明人： Shunpei Yamazaki , Tamae Moriwaka , Kazutaka Kuriki , Mikio Yukawa
IPC分类号： H01M6/04 , H01G11/26 , H01G11/46 , H01M4/131 , H01M4/134 , H01M4/1395 , H01M4/36 , H01M4/587 , H01M4/62 , H01M10/0525 , H01M10/0561 , H01G11/28 , H01G11/32 , H01M4/02
摘要： The present invention relates to a power storage system including a negative electrode which has a crystalline silicon film provided as a negative electrode active material on the surface of a current collector and contains a conductive oxide in a surface layer section of the crystalline silicon film. Alternatively, the present invention relates to a method for manufacturing a power storage system, which includes the step of forming an amorphous silicon film on a current collector, adding a catalytic element for promoting crystallization of the amorphous silicon, onto a surface of the amorphous silicon film, heating the amorphous silicon film with the catalytic element added to crystallize the amorphous silicon film and thereby form a crystalline silicon film, and using the crystalline silicon film as a negative electrode active material layer.

2. 发明授权

US08795895B2 Power storage device 有权
公开(公告)号：US08795895B2
公开(公告)日：2014-08-05
申请号：US13049407
申请日：2011-03-16
申请人： Mikio Yukawa , Tamae Moriwaka
发明人： Mikio Yukawa , Tamae Moriwaka
IPC分类号： H01M4/58 , H01M4/26 , C23C14/34 , C23C14/06
摘要： A power storage device with favorable battery characteristics and a manufacturing method thereof are provided. The power storage device includes at least a positive electrode and a negative electrode provided so as to face the positive electrode with an electrolyte provided therebetween. The positive electrode includes a collector and a film containing an active material over the collector. The film containing the active material contains LieFefPgOh satisfying relations 3.5≦h/g≦4.5, 0.6≦g/f≦1.1, and 0≦e/f≦1.3 and LiaFebPcOd satisfying relations 3.5≦d/c≦4.5, 0.6≦c/b≦1.8, and 0.7≦a/b≦2.8. The film containing the active material contains the LiaFebPcOd satisfying the relations 3.5≦d/c≦4.5, 0.6≦c/b≦1.8, and 0.7≦a/b≦2.8 in a region which is in contact with the electrolyte.

3. 发明授权

US08841027B2 Power storage device 有权
标题翻译：蓄电装置
公开(公告)号：US08841027B2
公开(公告)日：2014-09-23
申请号：US13049407
申请日：2011-03-16
申请人： Mikio Yukawa , Tamae Moriwaka
发明人： Mikio Yukawa , Tamae Moriwaka
IPC分类号： H01M4/58 , H01M4/26 , C23C14/34 , C23C14/06
CPC分类号： H01M4/5825 , C23C14/0036 , C23C14/08 , C23C14/3407 , C23C14/3492 , H01M4/0404 , H01M4/0426 , H01M4/136 , H01M4/1397 , H01M4/366 , H01M10/052 , H01M2004/021 , Y10T29/49108 , Y10T29/49115
摘要： A power storage device with favorable battery characteristics and a manufacturing method thereof are provided. The power storage device includes at least a positive electrode and a negative electrode provided so as to face the positive electrode with an electrolyte provided therebetween. The positive electrode includes a collector and a film containing an active material over the collector. The film containing the active material contains LieFefPgOh satisfying relations 3.5≦h/g≦4.5, 0.6≦g/f≦1.1, and 0≦e/f≦1.3 and LiaFebPcOd satisfying relations 3.5≦d/c≦4.5, 0.6≦c/b≦1.8, and 0.7≦a/b≦2.8. The film containing the active material contains the LiaFebPcOd satisfying the relations 3.5≦d/c≦4.5, 0.6≦c/b≦1.8, and 0.7≦a/b≦2.8 in a region which is in contact with the electrolyte.
摘要翻译：提供了具有良好的电池特性的蓄电装置及其制造方法。蓄电装置至少包括正电极和负电极，所述正电极和负电极设置成面对正电极，其间设置有电解质。正极包括集电体和在集电体上含有活性材料的膜。含有活性物质的膜含有满足3.5＆nlE; h / g＆nlE; 4.5,0.6＆nlE; g / f＆nlE; 1.1和0＆nlE; e / f＆nlE; 1.3和LiaFebPcOd的关系的LieFefPgOh满足关系3.5＆nlE; d / c＆nlE; 4.5,0.6 ＆nlE; c / b＆nlE; 1.8和0.7＆nlE; a / b＆nlE; 2.8。含有活性物质的膜含有与电解质接触的区域中满足3.5＆nlE; d / c＆nlE; 4.5,0.6＆nlE; c / b＆nlE; 1.8和0.7＆nlE; a / b＆nlE; 2.8的关系的LiaFebPcOd。

4. 发明授权

US09129754B2 Electrode for power storage device and power storage device 有权
标题翻译：蓄电装置及蓄电装置用电极
公开(公告)号：US09129754B2
公开(公告)日：2015-09-08
申请号：US13597652
申请日：2012-08-29
申请人： Kazutaka Kuriki , Mikio Yukawa , Nobuhiro Inoue
发明人： Kazutaka Kuriki , Mikio Yukawa , Nobuhiro Inoue
IPC分类号： H01M4/64 , H01M2/02 , H01G9/04 , H01G11/28 , H01M4/134 , H01M4/36 , H01M4/66 , H01G11/26 , H01G11/50 , H01M4/62 , H01M10/052 , H01M4/02
CPC分类号： H01G11/28 , H01G11/26 , H01G11/50 , H01M4/134 , H01M4/366 , H01M4/621 , H01M4/625 , H01M4/667 , H01M10/052 , H01M2004/021 , Y02E60/122 , Y02E60/13 , Y02P70/54
摘要： To provide an electrode for a power storage device, which has high reliability and can be miniaturized. To provide a power storage device including the electrode. In the electrode, a stress-relieving layer which relieves internal stress of an active material layer including a whisker is provided over a current collector. By the stress-relieving layer, deformation of the current collector can be suppressed and the productivity of the power storage device can be increased. In addition, the size of the power storage device can be reduced and the reliability thereof can be increased. Graphene may be formed so as to cover the active material layer including a whisker.
摘要翻译：提供具有高可靠性并且可以小型化的蓄电装置用电极。提供包括电极的蓄电装置。在电极中，在集电体上设置减轻包含晶须的活性物质层的内部应力的应力消除层。通过应力消除层，能够抑制集电体的变形，能够提高蓄电装置的生产率。另外，能够减小蓄电装置的尺寸，提高其可靠性。可以形成石墨烯以覆盖包括晶须的活性物质层。

5. 发明授权

US09685275B2 Power storage device and method for manufacturing the same 有权
公开(公告)号：US09685275B2
公开(公告)日：2017-06-20
申请号：US13088592
申请日：2011-04-18
申请人： Kazutaka Kuriki , Mikio Yukawa , Yuji Asano
发明人： Kazutaka Kuriki , Mikio Yukawa , Yuji Asano
IPC分类号： H01L29/02 , H01G11/06 , H01G11/28 , H01G11/30 , H01G11/46 , H01G11/50 , H01L49/02 , H01G11/26 , H01M4/04 , H01M4/134 , H01M4/1395 , H01M4/38 , H01M4/66 , C30B25/00 , C30B29/06 , C30B29/62 , C30B33/02 , H01L21/02 , H01M10/0525 , H01M10/0583
CPC分类号： H01M4/386 , C30B25/005 , C30B29/06 , C30B29/62 , C30B33/02 , H01G11/06 , H01G11/22 , H01G11/26 , H01G11/28 , H01G11/30 , H01G11/46 , H01G11/50 , H01G11/68 , H01G11/70 , H01L21/02532 , H01L21/02587 , H01L21/0262 , H01L28/82 , H01M4/0428 , H01M4/134 , H01M4/1395 , H01M4/382 , H01M4/661 , H01M4/667 , H01M10/0525 , H01M10/0569 , H01M10/0583 , H01M12/08 , H01M2300/0037 , Y02E60/13 , Y02P70/54 , Y02T10/7011 , Y02T10/7022
摘要： Provided is a method for manufacturing a power storage device in which a crystalline silicon layer including a whisker-like crystalline silicon region is formed as an active material layer over a current collector by a low-pressure CVD method in which heating is performed using a deposition gas containing silicon. The power storage device includes the current collector, a mixed layer formed over the current collector, and the crystalline silicon layer functioning as the active material layer formed over the mixed layer. The crystalline silicon layer includes a crystalline silicon region and a whisker-like crystalline silicon region including a plurality of protrusions which project over the crystalline silicon region. With the protrusions, the surface area of the crystalline silicon layer functioning as the active material layer can be increased.

6. 发明授权

US09281134B2 Power storage device and method for manufacturing the same 有权
标题翻译：蓄电装置及其制造方法
公开(公告)号：US09281134B2
公开(公告)日：2016-03-08
申请号：US13111079
申请日：2011-05-19
申请人： Satoshi Murakami , Kazutaka Kuriki , Mikio Yukawa
发明人： Satoshi Murakami , Kazutaka Kuriki , Mikio Yukawa
IPC分类号： H01G11/30 , C23C16/24 , H01G11/24 , H01M4/04 , H01M4/134 , H01M4/1395 , H01M4/66
CPC分类号： H01G11/24 , C23C16/24 , H01G11/30 , H01G11/46 , H01M4/0428 , H01M4/134 , H01M4/1395 , H01M4/48 , H01M4/52 , H01M4/661 , H01M10/0525 , H01M2220/20 , H01M2220/30 , Y02E60/122 , Y02E60/13 , Y02P70/54 , Y02T10/7022 , Y10T29/417 , Y10T29/49115
摘要： A power storage device which can have an improved performance such as higher discharge capacity and in which deterioration due to peeling of an active material layer or the like is difficult to occur, and a method for manufacturing the power storage device are provided. The power storage device includes a current collector, a mixed layer formed over the current collector, and a crystalline silicon layer which is formed over the mixed layer and functions as an active material layer. The crystalline silicon layer includes a crystalline silicon region and a whisker-like crystalline silicon region including a plurality of protrusions projecting over the crystalline silicon region. The whisker-like crystalline silicon region includes a protrusion having a bending or branching portion.
摘要翻译：能够提高放电容量等改善性能的蓄电装置，由于活性物质层等的剥离而导致的劣化难以发生，并且提供了蓄电装置的制造方法。蓄电装置包括集电体，在集电体上形成的混合层，以及形成在混合层上并用作活性物质层的晶体硅层。结晶硅层包括晶体硅区域和晶须状晶体硅区域，其包括在结晶硅区域上突出的多个突起。晶须状结晶硅区域包括具有弯曲或分支部分的突起。

7. 发明申请

US20130059195A1 ELECTRODE FOR POWER STORAGE DEVICE AND POWER STORAGE DEVICE 有权
标题翻译：用于蓄电装置的电极和蓄电装置
公开(公告)号：US20130059195A1
公开(公告)日：2013-03-07
申请号：US13597652
申请日：2012-08-29
申请人： Kazutaka Kuriki , Mikio Yukawa , Nobuhiro Inoue
发明人： Kazutaka Kuriki , Mikio Yukawa , Nobuhiro Inoue
IPC分类号： H01M4/64 , H01G9/04 , H01M2/02
CPC分类号： H01G11/28 , H01G11/26 , H01G11/50 , H01M4/134 , H01M4/366 , H01M4/621 , H01M4/625 , H01M4/667 , H01M10/052 , H01M2004/021 , Y02E60/122 , Y02E60/13 , Y02P70/54
摘要： To provide an electrode for a power storage device, which has high reliability and can be miniaturized. To provide a power storage device including the electrode. In the electrode, a stress-relieving layer which relieves internal stress of an active material layer including a whisker is provided over a current collector. By the stress-relieving layer, deformation of the current collector can be suppressed and the productivity of the power storage device can be increased. In addition, the size of the power storage device can be reduced and the reliability thereof can be increased. Graphene may be formed so as to cover the active material layer including a whisker.
摘要翻译：提供具有高可靠性并且可以小型化的蓄电装置用电极。提供包括电极的蓄电装置。在电极中，在集电体上设置减轻包含晶须的活性物质层的内部应力的应力消除层。通过应力消除层，能够抑制集电体的变形，能够提高蓄电装置的生产率。另外，能够减小蓄电装置的尺寸，提高其可靠性。可以形成石墨烯以覆盖包括晶须的活性物质层。

8. 发明申请

US20090140231A1 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090140231A1
公开(公告)日：2009-06-04
申请号：US11918960
申请日：2006-04-25
申请人： Mikio Yukawa , Nobuharu Ohsawa , Yoshinobu Asami , Ikuko Kawamata , Shunpei Yamazaki
发明人： Mikio Yukawa , Nobuharu Ohsawa , Yoshinobu Asami , Ikuko Kawamata , Shunpei Yamazaki
IPC分类号： H01L45/00 , H01L51/40
CPC分类号： G11C13/0014 , B82Y10/00 , G11C2213/77 , G11C2213/79 , H01L27/13 , H01L27/285
摘要： It is an object of the present invention to provide a technique in which a high-performance and highly reliable semiconductor device can be manufactured at low cost with high yield. A memory device according to the present invention has a first conductive layer including a plurality of insulators, an organic compound layer over the first conductive layer including the insulators, and a second conductive layer over the organic compound layer.
摘要翻译：本发明的目的是提供一种以低成本，高产率地制造高性能和高可靠性的半导体器件的技术。根据本发明的存储器件具有包括多个绝缘体的第一导电层，包括绝缘体的第一导电层上的有机化合物层，以及有机化合物层上的第二导电层。

9. 发明申请

US20080210928A1 Semiconductor Device 有权
标题翻译：半导体器件
公开(公告)号：US20080210928A1
公开(公告)日：2008-09-04
申请号：US11547632
申请日：2005-10-18
申请人： Hiroko Abe , Yuji Iwaki , Mikio Yukawa , Shunpei Yamazaki , Yasuyuki Arai , Yasuko Watanabe , Yoshitaka Moriya
发明人： Hiroko Abe , Yuji Iwaki , Mikio Yukawa , Shunpei Yamazaki , Yasuyuki Arai , Yasuko Watanabe , Yoshitaka Moriya
IPC分类号： H01L51/10 , H01L27/108 , H01L33/00
CPC分类号： G11C13/0014 , B82Y10/00 , G11C13/00 , G11C17/14 , G11C17/143 , G11C17/16 , H01L27/285 , H01L51/0051 , H01L51/0059
摘要： The present invention provides a semiconductor device which has a storage element having a simple structure in which an organic compound layer is sandwiched between a pair of conductive layers and a manufacturing method of such a semiconductor device. With this characteristic, a semiconductor device having a storage circuit which is nonvolatile, additionally recordable, and easily manufactured and a manufacturing method of such a semiconductor device are provided. A semiconductor device according to the present invention has a plurality of field-effect transistors provided over an insulating layer and a plurality of storage elements provided over the plurality of field-effect transistors. Each of the plurality of field-effect transistors uses a single-crystal semiconductor layer as a channel portion and each of the plurality of storage elements is an element in which a first conductive layer, an organic compound layer, and a second conductive layer are stacked in order.
摘要翻译：本发明提供一种半导体器件，其具有其中有机化合物层夹在一对导电层之间的简单结构的存储元件和这种半导体器件的制造方法。利用该特征，提供了具有非易失性，可追加记录和容易制造的存储电路的半导体器件和这种半导体器件的制造方法。根据本发明的半导体器件具有设置在绝缘层上的多个场效应晶体管和设置在多个场效应晶体管上的多个存储元件。多个场效应晶体管中的每一个使用单晶半导体层作为沟道部分，并且多个存储元件中的每一个是其中堆叠第一导电层，有机化合物层和第二导电层的元件为了。

10. 发明申请

US20080093462A1 Semiconductor Device and Manufacturing Method Thereof 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20080093462A1
公开(公告)日：2008-04-24
申请号：US11587531
申请日：2005-11-28
申请人： Hiroko Abe , Mikio Yukawa , Ryoji Nomura , Satoshi Seo , Shunpei Yamazaki
发明人： Hiroko Abe , Mikio Yukawa , Ryoji Nomura , Satoshi Seo , Shunpei Yamazaki
IPC分类号： G06K19/06
CPC分类号： H01L27/10 , B82Y10/00 , G11C13/0004 , G11C13/0007 , G11C13/0014 , G11C17/16 , G11C2213/32 , G11C2213/77 , G11C2213/79 , H01L27/12 , H01L27/28 , H01L27/283 , H01L29/78645 , H01L51/0059
摘要： It is an object of the present invention to provide a semiconductor device having a memory circuit which is nonvolatile and able to be written additionally, an antenna which can be easily manufactured, and to provide a manufacturing method thereof. In addition, it is an object of the present invention to prevent unauthorized rewriting of information of a wireless chip and forgery of a wireless chip itself and to ensure a security of a wireless chip. In view of the foregoing, the present invention provides an IC tag in which information thereof is identified by wireless communication signal and also information of a memory in an IC tag (a memory which can not be rewritten) is identified by an optical reading device. A memory in an IC tag according to the present invention has an identification surface with which information can be identified by an optical reading device.
摘要翻译：本发明的目的是提供一种具有非易失性且能够被写入的存储电路的半导体器件，可容易地制造的天线，并提供其制造方法。此外，本发明的目的是防止无线芯片的信息的未经授权的重写和无线芯片本身的伪造并且确保无线芯片的安全性。鉴于上述情况，本发明提供了一种IC标签，其中通过无线通信信号识别信息，并且还通过光学读取装置识别IC标签（不能被重写的存储器）中的存储器的信息。根据本发明的IC标签中的存储器具有可由光学读取装置识别信息的识别表面。

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