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1. 发明授权

US09281134B2 Power storage device and method for manufacturing the same 有权
标题翻译：蓄电装置及其制造方法
公开(公告)号：US09281134B2
公开(公告)日：2016-03-08
申请号：US13111079
申请日：2011-05-19
申请人： Satoshi Murakami , Kazutaka Kuriki , Mikio Yukawa
发明人： Satoshi Murakami , Kazutaka Kuriki , Mikio Yukawa
IPC分类号： H01G11/30 , C23C16/24 , H01G11/24 , H01M4/04 , H01M4/134 , H01M4/1395 , H01M4/66
CPC分类号： H01G11/24 , C23C16/24 , H01G11/30 , H01G11/46 , H01M4/0428 , H01M4/134 , H01M4/1395 , H01M4/48 , H01M4/52 , H01M4/661 , H01M10/0525 , H01M2220/20 , H01M2220/30 , Y02E60/122 , Y02E60/13 , Y02P70/54 , Y02T10/7022 , Y10T29/417 , Y10T29/49115
摘要： A power storage device which can have an improved performance such as higher discharge capacity and in which deterioration due to peeling of an active material layer or the like is difficult to occur, and a method for manufacturing the power storage device are provided. The power storage device includes a current collector, a mixed layer formed over the current collector, and a crystalline silicon layer which is formed over the mixed layer and functions as an active material layer. The crystalline silicon layer includes a crystalline silicon region and a whisker-like crystalline silicon region including a plurality of protrusions projecting over the crystalline silicon region. The whisker-like crystalline silicon region includes a protrusion having a bending or branching portion.
摘要翻译：能够提高放电容量等改善性能的蓄电装置，由于活性物质层等的剥离而导致的劣化难以发生，并且提供了蓄电装置的制造方法。蓄电装置包括集电体，在集电体上形成的混合层，以及形成在混合层上并用作活性物质层的晶体硅层。结晶硅层包括晶体硅区域和晶须状晶体硅区域，其包括在结晶硅区域上突出的多个突起。晶须状结晶硅区域包括具有弯曲或分支部分的突起。

2. 发明授权

US09129754B2 Electrode for power storage device and power storage device 有权
标题翻译：蓄电装置及蓄电装置用电极
公开(公告)号：US09129754B2
公开(公告)日：2015-09-08
申请号：US13597652
申请日：2012-08-29
申请人： Kazutaka Kuriki , Mikio Yukawa , Nobuhiro Inoue
发明人： Kazutaka Kuriki , Mikio Yukawa , Nobuhiro Inoue
IPC分类号： H01M4/64 , H01M2/02 , H01G9/04 , H01G11/28 , H01M4/134 , H01M4/36 , H01M4/66 , H01G11/26 , H01G11/50 , H01M4/62 , H01M10/052 , H01M4/02
CPC分类号： H01G11/28 , H01G11/26 , H01G11/50 , H01M4/134 , H01M4/366 , H01M4/621 , H01M4/625 , H01M4/667 , H01M10/052 , H01M2004/021 , Y02E60/122 , Y02E60/13 , Y02P70/54
摘要： To provide an electrode for a power storage device, which has high reliability and can be miniaturized. To provide a power storage device including the electrode. In the electrode, a stress-relieving layer which relieves internal stress of an active material layer including a whisker is provided over a current collector. By the stress-relieving layer, deformation of the current collector can be suppressed and the productivity of the power storage device can be increased. In addition, the size of the power storage device can be reduced and the reliability thereof can be increased. Graphene may be formed so as to cover the active material layer including a whisker.
摘要翻译：提供具有高可靠性并且可以小型化的蓄电装置用电极。提供包括电极的蓄电装置。在电极中，在集电体上设置减轻包含晶须的活性物质层的内部应力的应力消除层。通过应力消除层，能够抑制集电体的变形，能够提高蓄电装置的生产率。另外，能够减小蓄电装置的尺寸，提高其可靠性。可以形成石墨烯以覆盖包括晶须的活性物质层。

3. 发明授权

US09685275B2 Power storage device and method for manufacturing the same 有权
公开(公告)号：US09685275B2
公开(公告)日：2017-06-20
申请号：US13088592
申请日：2011-04-18
申请人： Kazutaka Kuriki , Mikio Yukawa , Yuji Asano
发明人： Kazutaka Kuriki , Mikio Yukawa , Yuji Asano
IPC分类号： H01L29/02 , H01G11/06 , H01G11/28 , H01G11/30 , H01G11/46 , H01G11/50 , H01L49/02 , H01G11/26 , H01M4/04 , H01M4/134 , H01M4/1395 , H01M4/38 , H01M4/66 , C30B25/00 , C30B29/06 , C30B29/62 , C30B33/02 , H01L21/02 , H01M10/0525 , H01M10/0583
CPC分类号： H01M4/386 , C30B25/005 , C30B29/06 , C30B29/62 , C30B33/02 , H01G11/06 , H01G11/22 , H01G11/26 , H01G11/28 , H01G11/30 , H01G11/46 , H01G11/50 , H01G11/68 , H01G11/70 , H01L21/02532 , H01L21/02587 , H01L21/0262 , H01L28/82 , H01M4/0428 , H01M4/134 , H01M4/1395 , H01M4/382 , H01M4/661 , H01M4/667 , H01M10/0525 , H01M10/0569 , H01M10/0583 , H01M12/08 , H01M2300/0037 , Y02E60/13 , Y02P70/54 , Y02T10/7011 , Y02T10/7022
摘要： Provided is a method for manufacturing a power storage device in which a crystalline silicon layer including a whisker-like crystalline silicon region is formed as an active material layer over a current collector by a low-pressure CVD method in which heating is performed using a deposition gas containing silicon. The power storage device includes the current collector, a mixed layer formed over the current collector, and the crystalline silicon layer functioning as the active material layer formed over the mixed layer. The crystalline silicon layer includes a crystalline silicon region and a whisker-like crystalline silicon region including a plurality of protrusions which project over the crystalline silicon region. With the protrusions, the surface area of the crystalline silicon layer functioning as the active material layer can be increased.

4. 发明授权

US10141120B2 Power storage system and manufacturing method thereof and secondary battery and capacitor 有权
公开(公告)号：US10141120B2
公开(公告)日：2018-11-27
申请号：US13033877
申请日：2011-02-24
申请人： Shunpei Yamazaki , Tamae Moriwaka , Kazutaka Kuriki , Mikio Yukawa
发明人： Shunpei Yamazaki , Tamae Moriwaka , Kazutaka Kuriki , Mikio Yukawa
IPC分类号： H01M6/04 , H01G11/26 , H01G11/46 , H01M4/131 , H01M4/134 , H01M4/1395 , H01M4/36 , H01M4/587 , H01M4/62 , H01M10/0525 , H01M10/0561 , H01G11/28 , H01G11/32 , H01M4/02
摘要： The present invention relates to a power storage system including a negative electrode which has a crystalline silicon film provided as a negative electrode active material on the surface of a current collector and contains a conductive oxide in a surface layer section of the crystalline silicon film. Alternatively, the present invention relates to a method for manufacturing a power storage system, which includes the step of forming an amorphous silicon film on a current collector, adding a catalytic element for promoting crystallization of the amorphous silicon, onto a surface of the amorphous silicon film, heating the amorphous silicon film with the catalytic element added to crystallize the amorphous silicon film and thereby form a crystalline silicon film, and using the crystalline silicon film as a negative electrode active material layer.

5. 发明申请

US20130059195A1 ELECTRODE FOR POWER STORAGE DEVICE AND POWER STORAGE DEVICE 有权
标题翻译：用于蓄电装置的电极和蓄电装置
公开(公告)号：US20130059195A1
公开(公告)日：2013-03-07
申请号：US13597652
申请日：2012-08-29
申请人： Kazutaka Kuriki , Mikio Yukawa , Nobuhiro Inoue
发明人： Kazutaka Kuriki , Mikio Yukawa , Nobuhiro Inoue
IPC分类号： H01M4/64 , H01G9/04 , H01M2/02
CPC分类号： H01G11/28 , H01G11/26 , H01G11/50 , H01M4/134 , H01M4/366 , H01M4/621 , H01M4/625 , H01M4/667 , H01M10/052 , H01M2004/021 , Y02E60/122 , Y02E60/13 , Y02P70/54
摘要： To provide an electrode for a power storage device, which has high reliability and can be miniaturized. To provide a power storage device including the electrode. In the electrode, a stress-relieving layer which relieves internal stress of an active material layer including a whisker is provided over a current collector. By the stress-relieving layer, deformation of the current collector can be suppressed and the productivity of the power storage device can be increased. In addition, the size of the power storage device can be reduced and the reliability thereof can be increased. Graphene may be formed so as to cover the active material layer including a whisker.
摘要翻译：提供具有高可靠性并且可以小型化的蓄电装置用电极。提供包括电极的蓄电装置。在电极中，在集电体上设置减轻包含晶须的活性物质层的内部应力的应力消除层。通过应力消除层，能够抑制集电体的变形，能够提高蓄电装置的生产率。另外，能够减小蓄电装置的尺寸，提高其可靠性。可以形成石墨烯以覆盖包括晶须的活性物质层。

6. 发明授权

US08847209B2 Memory device and a semiconductor device 有权
标题翻译：存储器件和半导体器件
公开(公告)号：US08847209B2
公开(公告)日：2014-09-30
申请号：US13085727
申请日：2011-04-13
申请人： Mikio Yukawa
发明人： Mikio Yukawa
IPC分类号： H01L35/24 , G11C13/04 , G11C13/00 , B82Y10/00 , H01L27/13 , H01L51/52
CPC分类号： G11C13/0014 , B82Y10/00 , G11C13/0009 , G11C13/04 , G11C2213/77 , G11C2213/79 , H01L27/13 , H01L51/52
摘要： The present invention provides a memory device and a semiconductor device which have high reliability for writing at low cost. Furthermore, the present invention provides a memory device and a semiconductor device having a non-volatile memory element in which data can be additionally written and which can prevent forgery due to rewriting and the like. The memory element includes a first conductive layer, a second conductive layer, and an organic compound layer, which is formed between the first conductive layer and the second conductive layer, and which has a photosensitized oxidation reduction agent which can be an excited state by recombination energy of electrons and holes and a substance which can react with the photosensitized oxidation reduction agent.
摘要翻译：本发明提供了一种以低成本写入的高可靠性的存储器件和半导体器件。此外，本发明提供了一种具有非易失性存储元件的存储器件和半导体器件，其中可以额外地写入数据，并且可以防止由于重写等引起的伪造。存储元件包括形成在第一导电层和第二导电层之间的第一导电层，第二导电层和有机化合物层，并且其具有通过复合可以是激发态的光敏氧化还原剂电子和空穴的能量以及可与光敏氧化还原剂反应的物质。

7. 发明授权

US08664035B2 Memory element and semiconductor device 有权
标题翻译：存储元件和半导体器件
公开(公告)号：US08664035B2
公开(公告)日：2014-03-04
申请号：US11826227
申请日：2007-07-13
申请人： Mikio Yukawa , Nozomu Sugisawa
发明人： Mikio Yukawa , Nozomu Sugisawa
IPC分类号： H01L51/40
CPC分类号： H01L27/112 , B82Y10/00 , G11C11/5664 , G11C13/0014 , G11C13/004 , G11C2013/0054 , G11C2213/33 , G11C2213/34 , G11C2213/77 , G11C2213/79 , H01L21/84 , H01L24/12 , H01L24/28 , H01L24/81 , H01L24/83 , H01L27/11206 , H01L27/1203 , H01L2223/6677 , H01L2224/2929 , H01L2224/293 , H01L2224/81801 , H01L2224/83851 , H01L2924/00011 , H01L2924/01004 , H01L2924/01012 , H01L2924/01019 , H01L2924/0102 , H01L2924/01025 , H01L2924/01037 , H01L2924/01055 , H01L2924/01063 , H01L2924/01068 , H01L2924/01078 , H01L2924/01079 , H01L2924/04941 , H01L2924/07811 , H01L2924/12032 , H01L2924/12036 , H01L2924/12042 , H01L2924/12044 , H01L2924/14 , H01L2924/3512 , H01L2924/00 , H01L2224/29075 , H01L2924/00014
摘要： An object is to reduce variations in programming behavior from memory element to memory element. Furthermore, an object is to obtain a semiconductor device with excellent writing characteristics and in which the memory element is mounted. The memory element includes a first conductive layer, a metal oxide layer, a semiconductor layer, an organic compound layer, and a second conductive layer, where the metal oxide layer, the semiconductor layer, and the organic compound layer are interposed between the first conductive layer and the second conductive layer; the metal oxide layer is provided in contact with the first conductive layer; and the semiconductor layer is provided in contact with the metal oxide layer. By use of this kind of structure, variations in programming behavior from memory element to memory element are reduced.
摘要翻译：一个目的是减少编程行为从内存元素到内存元素的变化。此外，目的是获得具有优良写入特性的半导体器件，并且其中安装存储元件。存储元件包括第一导电层，金属氧化物层，半导体层，有机化合物层和第二导电层，其中金属氧化物层，半导体层和有机化合物层介于第一导电层层和第二导电层; 金属氧化物层设置成与第一导电层接触; 并且所述半导体层设置成与所述金属氧化物层接触。通过使用这种结构，减少了从存储元件到存储元件的编程行为的变化。

8. 发明授权

US08101943B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08101943B2
公开(公告)日：2012-01-24
申请号：US11918611
申请日：2006-04-25
申请人： Mikio Yukawa , Nobuharu Ohsawa , Ryoji Nomura , Yoshinobu Asami
发明人： Mikio Yukawa , Nobuharu Ohsawa , Ryoji Nomura , Yoshinobu Asami
IPC分类号： H01L35/24 , H01L51/00
CPC分类号： G11C13/0014 , B82Y10/00 , G11C2213/77 , G11C2213/79 , H01L27/285 , H01L51/0591
摘要： It is an object of the present invention to provide a technique in which a high-performance and high reliable memory device and a semi-conductor device provided with the memory device are manufactured at low cost with high yield. The semiconductor device includes an organic compound layer including an insulator over a first conductive layer and a second conductive layer over the organic compound layer including an insulator. Further, the semiconductor device is manufactured by forming a first conductive layer, discharging a composition of an insulator and an organic compound over the first conductive layer to form an organic compound layer including an insulator, and forming a second conductive layer over the organic compound layer including an insulator.
摘要翻译：本发明的目的是提供一种以低成本，高成品率地制造设置有存储装置的高性能且高可靠性的存储装置和半导体装置的技术。半导体器件包括在第一导电层上包括绝缘体的有机化合物层和包含绝缘体的有机化合物层上的第二导电层。此外，半导体器件通过在第一导电层上形成第一导电层，排出绝缘体和有机化合物的组合物而形成包含绝缘体的有机化合物层，并在有机化合物层上形成第二导电层来制造包括绝缘体。

9. 发明授权

US07688624B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07688624B2
公开(公告)日：2010-03-30
申请号：US11547905
申请日：2005-11-22
申请人： Hiroko Abe , Mikio Yukawa , Tamae Takano , Yoshinobu Asami , Kiyoshi Kato , Ryoji Nomura , Yoshitaka Moriya
发明人： Hiroko Abe , Mikio Yukawa , Tamae Takano , Yoshinobu Asami , Kiyoshi Kato , Ryoji Nomura , Yoshitaka Moriya
IPC分类号： G11C11/34
CPC分类号： H01L27/1266 , B82Y10/00 , G11C13/0014 , G11C13/04 , H01L27/12 , H01L27/1285 , H01L27/1292 , H01L27/13 , H01L27/283 , H01L51/0059
摘要： It is an object of the present invention to provide a volatile organic memory in which data can be written other than during manufacturing and falsification by rewriting can be prevented, and to provide a semiconductor device including such an organic memory. It is a feature of the invention that a semiconductor device includes a plurality of bit lines extending in a first direction; a plurality of word lines extending in a second direction different from the first direction; a memory cell array including a plurality of memory cells each provided at one of intersections of the bit lines and the word lines; and memory elements provided in the memory cells, wherein the memory elements include bit lines, an organic compound layer, and the word lines, and the organic compound layer includes a layer in which an inorganic compound and an organic compound are mixed.
摘要翻译：本发明的一个目的是提供一种挥发性有机存储器，其中除了在制造期间可以写入数据，并且可以防止通过改写伪造，并提供包括这种有机存储器的半导体器件。本发明的特征在于，半导体器件包括沿第一方向延伸的多个位线; 沿与第一方向不同的第二方向延伸的多个字线; 存储单元阵列，包括多个存储单元，每个存储单元分别设置在位线和字线的交点之一处; 以及设置在存储单元中的存储元件，其中存储元件包括位线，有机化合物层和字线，有机化合物层包括混合有无机化合物和有机化合物的层。

10. 发明申请

US20090140231A1 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090140231A1
公开(公告)日：2009-06-04
申请号：US11918960
申请日：2006-04-25
申请人： Mikio Yukawa , Nobuharu Ohsawa , Yoshinobu Asami , Ikuko Kawamata , Shunpei Yamazaki
发明人： Mikio Yukawa , Nobuharu Ohsawa , Yoshinobu Asami , Ikuko Kawamata , Shunpei Yamazaki
IPC分类号： H01L45/00 , H01L51/40
CPC分类号： G11C13/0014 , B82Y10/00 , G11C2213/77 , G11C2213/79 , H01L27/13 , H01L27/285
摘要： It is an object of the present invention to provide a technique in which a high-performance and highly reliable semiconductor device can be manufactured at low cost with high yield. A memory device according to the present invention has a first conductive layer including a plurality of insulators, an organic compound layer over the first conductive layer including the insulators, and a second conductive layer over the organic compound layer.
摘要翻译：本发明的目的是提供一种以低成本，高产率地制造高性能和高可靠性的半导体器件的技术。根据本发明的存储器件具有包括多个绝缘体的第一导电层，包括绝缘体的第一导电层上的有机化合物层，以及有机化合物层上的第二导电层。

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