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1. 发明授权

US08740506B2 Positioning apparatus 有权
标题翻译：定位装置
公开(公告)号：US08740506B2
公开(公告)日：2014-06-03
申请号：US13033253
申请日：2011-02-23
申请人： Shogo Ogaki , Takashi Ando , Masaru Inoue , Takeshi Shimoda
发明人： Shogo Ogaki , Takashi Ando , Masaru Inoue , Takeshi Shimoda
IPC分类号： B65G51/20
CPC分类号： B65G51/03 , B65G47/525 , H01L41/25
摘要： A positioning apparatus includes a stage on which a piezoelectric element is set, a stop unit having a stop face to which the piezoelectric element set on the stage is pushed so that the piezoelectric element is positioned at a target position corresponding to an attaching part of, for example, a head suspension to which the piezoelectric element is attached, and a pushing unit to push the piezoelectric element toward the stop face, the pushing unit blowing a gas to push the piezoelectric element. The positioning apparatus is capable of correctly positioning the piezoelectric element to the target position without damaging the piezoelectric element.
摘要翻译：一种定位装置，包括设置有压电元件的台，具有止动面的停止单元，所述停止面被压入到设置在所述台上的所述压电元件，使得所述压电元件位于对应于所述平台的安装部的目标位置，例如，安装有压电元件的磁头悬架以及将压电元件朝向止动面推压的推压单元，推压单元吹出气体来推压压电元件。定位装置能够将压电元件正确地定位到目标位置而不损坏压电元件。

2. 发明授权

US08317081B2 Reflow bonding method and method of manufacturing head suspension 有权
标题翻译：回流焊接方法及其制造方法
公开(公告)号：US08317081B2
公开(公告)日：2012-11-27
申请号：US12907406
申请日：2010-10-19
申请人： Shogo Ogaki , Takashi Ando , Masaru Inoue
发明人： Shogo Ogaki , Takashi Ando , Masaru Inoue
IPC分类号： B23K31/02
CPC分类号： B23K3/04 , B23K1/0016 , G11B5/4833
摘要： A reflow bonding method easily bonds first and second wiring members together by reflowing solder arranged on at least one of first and second bonding parts that are defined on the first and second wiring members, respectively. The method includes positioning the first and second wiring members so that the first and second bonding parts face each other with the solder interposed between them and heating and pressing one of the first and second bonding parts from behind with a pressing face of a heater chip so that the first and second bonding parts lie one on another and so that the solder is heated and reflows to bond the first and second wiring members together.
摘要翻译：回流焊接方法通过分别在第一和第二布线构件上限定的第一和第二接合部中的至少一个上的回流焊料容易地将第一和第二布线构件接合在一起。该方法包括：定位第一和第二布线构件，使得第一和第二接合部分彼此面对，并且夹在它们之间的焊料并且用加热器片的按压面从后面加热和加压第一和第二接合部分中的一个，从而第一和第二接合部分彼此位于一起并且使得焊料被加热并且回流以将第一和第二配线构件结合在一起。

3. 发明申请

US20110101076A1 REFLOW BONDING METHOD AND METHOD OF MANUFACTURING HEAD SUSPENSION 有权
标题翻译：反射粘合方法和制造头枕的方法
公开(公告)号：US20110101076A1
公开(公告)日：2011-05-05
申请号：US12907406
申请日：2010-10-19
申请人： Shogo OGAKI , Takashi Ando , Masaru Inoue
发明人： Shogo OGAKI , Takashi Ando , Masaru Inoue
IPC分类号： B23K31/02
CPC分类号： B23K3/04 , B23K1/0016 , G11B5/4833
摘要： A reflow bonding method easily bonds first and second wiring members together by reflowing solder arranged on at least one of first and second bonding parts that are defined on the first and second wiring members, respectively. The method includes positioning the first and second wiring members so that the first and second bonding parts face each other with the solder interposed between them and heating and pressing one of the first and second bonding parts from behind with a pressing face of a heater chip so that the first and second bonding parts lie one on another and so that the solder is heated and reflows to bond the first and second wiring members together
摘要翻译：回流焊接方法通过分别在第一和第二布线构件上限定的第一和第二接合部中的至少一个上的回流焊料容易地将第一和第二布线构件接合在一起。该方法包括：定位第一和第二布线构件，使得第一和第二接合部分彼此面对，并且夹在它们之间的焊料并且用加热器片的按压面从后面加热和加压第一和第二接合部分中的一个，从而第一和第二接合部分彼此位于一起并且使得焊料被加热并且回流以将第一和第二配线构件结合在一起

4. 发明申请

US20110222971A1 POSITIONING APPARATUS 有权
标题翻译：定位装置
公开(公告)号：US20110222971A1
公开(公告)日：2011-09-15
申请号：US13033253
申请日：2011-02-23
申请人： Shogo OGAKI , Takashi Ando , Masaru Inoue , Takeshi Shimoda
发明人： Shogo OGAKI , Takashi Ando , Masaru Inoue , Takeshi Shimoda
IPC分类号： B65G54/00
CPC分类号： B65G51/03 , B65G47/525 , H01L41/25
摘要： A positioning apparatus includes a stage on which a piezoelectric element is set, a stop unit having a stop face to which the piezoelectric element set on the stage is pushed so that the piezoelectric element is positioned at a target position corresponding to an attaching part of, for example, a head suspension to which the piezoelectric element is attached, and a pushing unit to push the piezoelectric element toward the stop face, the pushing unit blowing a gas to push the piezoelectric element. The positioning apparatus is capable of correctly positioning the piezoelectric element to the target position without damaging the piezoelectric element.
摘要翻译：一种定位装置，包括设置有压电元件的台，具有止动面的停止单元，所述停止面被压入到设置在所述台上的所述压电元件，使得所述压电元件位于对应于所述平台的安装部的目标位置，例如，安装有压电元件的磁头悬架以及将压电元件朝向止动面推压的推压单元，推压单元吹出气体来推压压电元件。定位装置能够将压电元件正确地定位到目标位置而不损坏压电元件。

5. 发明申请

US20110219884A1 POSITION TESTING APPARATUS 有权
标题翻译：位置测试装置
公开(公告)号：US20110219884A1
公开(公告)日：2011-09-15
申请号：US13033326
申请日：2011-02-23
申请人： Shogo OGAKI , Takashi Ando
发明人： Shogo OGAKI , Takashi Ando
IPC分类号： G01F1/00
CPC分类号： G11B5/4806 , G11B5/483 , G11B5/4873
摘要： A position testing apparatus includes a stage on which a piezoelectric element object is set, a through hole formed through the stage and covered with the piezoelectric element set on the stage according to a positioning state, and a flow measurement unit configured to draw air through the through hole from around the piezoelectric element and determine the positioning state of the piezoelectric element according to a flow rate of the drawn air. The position testing apparatus is capable of surely testing a positioning state of the piezoelectric element.
摘要翻译：一种位置测试装置，包括：设置压电元件的台阶;通过台阶形成的通孔，并且根据定位状态被设置在舞台上的压电元件覆盖;流量测量单元，通过压电元件周围的通孔，并根据抽吸空气的流量确定压电元件的定位状态。位置测试装置能够可靠地测试压电元件的定位状态。

6. 发明授权

US08733184B2 Position testing apparatus 有权
标题翻译：位置测试仪
公开(公告)号：US08733184B2
公开(公告)日：2014-05-27
申请号：US13033326
申请日：2011-02-23
申请人： Shogo Ogaki , Takashi Ando
发明人： Shogo Ogaki , Takashi Ando
IPC分类号： G01L1/02 , G01L5/08 , G01L7/00 , B65G51/20 , B65G53/58
CPC分类号： G11B5/4806 , G11B5/483 , G11B5/4873
摘要： A position testing apparatus includes a stage on which a piezoelectric element object is set, a through hole formed through the stage and covered with the piezoelectric element set on the stage according to a positioning state, and a flow measurement unit configured to draw air through the through hole from around the piezoelectric element and determine the positioning state of the piezoelectric element according to a flow rate of the drawn air. The position testing apparatus is capable of surely testing a positioning state of the piezoelectric element.
摘要翻译：一种位置测试装置，包括：设置压电元件的台阶;通过台阶形成的通孔，并且根据定位状态被设置在舞台上的压电元件覆盖;流量测量单元，通过压电元件周围的通孔，并根据抽吸空气的流量确定压电元件的定位状态。位置测试装置能够可靠地测试压电元件的定位状态。

7. 发明授权

US08853413B2 Process for producing pyripyropene derivatives 有权
公开(公告)号：US08853413B2
公开(公告)日：2014-10-07
申请号：US13266671
申请日：2010-05-12
申请人： Yoshimasa Fukuda , Takashi Ando , Kimihiko Goto , Nozomu Nakanishi , Takashi Watanabe , Kenichi Kurihara , Nobuto Minowa , Masaaki Mitomi
发明人： Yoshimasa Fukuda , Takashi Ando , Kimihiko Goto , Nozomu Nakanishi , Takashi Watanabe , Kenichi Kurihara , Nobuto Minowa , Masaaki Mitomi
IPC分类号： C07D401/04
CPC分类号： C07D493/04
摘要： Disclosed is a process for efficiently producing pyripyropene derivatives having acyloxy at the 1-position and 11-position and hydroxyl at the 7-position. The process comprises selectively acylating hydroxyl at the 1-position and 11-position of a compound represented by formula B1 through one to three steps with an acylating agent in the presence or absence of a base.

8. 发明授权

US08786030B2 Gate-last fabrication of quarter-gap MGHK FET 失效
标题翻译：最后制造四分之一MGHK FET
公开(公告)号：US08786030B2
公开(公告)日：2014-07-22
申请号：US13570388
申请日：2012-08-09
申请人： Takashi Ando , Kisik Choi , Vijay Narayanan , Tenko Yamashita , Junli Wang
发明人： Takashi Ando , Kisik Choi , Vijay Narayanan , Tenko Yamashita , Junli Wang
IPC分类号： H01L21/02
CPC分类号： H01L29/517 , H01L21/28079 , H01L21/28088 , H01L29/4958 , H01L29/4966 , H01L29/66545
摘要： A quarter-gap p-type field effect transistor (PFET) formed by gate-last fabrication includes a gate stack formed on a silicon substrate, the gate stack including: a high-k dielectric layer located on the silicon substrate; and a gate metal layer located over the high-k dielectric layer, the gate metal layer including titanium nitride and having a thickness of about 20 angstroms; and a metal contact formed over the gate stack. A quarter-gap n-type field effect transistor (NFET) formed by gate-last fabrication includes a gate stack formed on a silicon substrate, the gate stack including: a high-k dielectric layer located on the silicon substrate; and a first gate metal layer located over the high-k dielectric layer, the first gate metal layer including titanium nitride; and a metal contact formed over the gate stack.
摘要翻译：通过栅极最终制造形成的四分之一间隙p型场效应晶体管（PFET）包括形成在硅衬底上的栅极堆叠，所述栅极堆叠包括：位于硅衬底上的高k电介质层; 以及位于高k电介质层上方的栅极金属层，所述栅极金属层包括氮化钛并且具有约20埃的厚度; 以及形成在栅极堆叠上的金属接触。通过栅极最后制造形成的四分之一间隙n型场效应晶体管（NFET）包括形成在硅衬底上的栅极堆叠，该栅极堆叠包括：位于硅衬底上的高k电介质层; 以及位于所述高k电介质层上方的第一栅极金属层，所述第一栅极金属层包括氮化钛; 以及形成在栅极堆叠上的金属接触。

9. 发明授权

US08647972B1 Multi-layer work function metal replacement gate 有权
标题翻译：多层功能金属更换门
公开(公告)号：US08647972B1
公开(公告)日：2014-02-11
申请号：US13618255
申请日：2012-09-14
申请人： Takashi Ando , Aritra Dasgupta , Unoh Kwon , Sean M. Polvino
发明人： Takashi Ando , Aritra Dasgupta , Unoh Kwon , Sean M. Polvino
IPC分类号： H01L21/3205 , H01L21/4763
CPC分类号： H01L29/66545 , H01L21/28088 , H01L29/4966 , H01L29/517 , H01L29/66795
摘要： Embodiments relate to a field-effect transistor (FET) replacement gate apparatus. The apparatus includes one or more of a substrate and insulator including a base and side walls defining a trench. A high-dielectric constant (high-k) layer is formed on the base and side walls of the trench. The high-k layer has an upper surface conforming to a shape of the trench. A first layer is formed on the high-k layer and conforms to the shape of the trench. The first layer includes an aluminum-free metal nitride. A second layer is formed on the first layer and conforms to the shape of the trench. The second layer includes aluminum and at least one other metal. A third layer is formed on the second layer and conforms to the shape of the trench. The third layer includes aluminum-free metal nitride.
摘要翻译：实施例涉及场效应晶体管（FET）替换门装置。该装置包括一个或多个衬底和绝缘体，其包括限定沟槽的基底和侧壁。在沟槽的底壁和侧壁上形成高介电常数（高k）层。高k层具有与沟槽形状一致的上表面。第一层形成在高k层上并符合沟槽的形状。第一层包括无铝的金属氮化物。在第一层上形成第二层并符合沟槽的形状。第二层包括铝和至少一种其他金属。第三层形成在第二层上并符合沟槽的形状。第三层包括无铝金属氮化物。

10. 发明申请

US20140008986A1 INVERTER SYSTEM 审中-公开
标题翻译：逆变器系统
公开(公告)号：US20140008986A1
公开(公告)日：2014-01-09
申请号：US14006905
申请日：2012-03-16
申请人： Taku Miyauchi , Takashi Ando
发明人： Taku Miyauchi , Takashi Ando
IPC分类号： H02J1/10
CPC分类号： H02J1/102 , H02J3/383 , H02M3/1584 , H02M2001/007 , Y02E10/563 , Y10T307/707
摘要： In the present invention, first boosting circuits (41a to 41d) are interposed upon each of direct current power lines (La to Ld). The boosting ratios of the first boosting circuits (41a to 41d), for each iteration of a first cycle, are variably controlled during a first period so that the generated power of the corresponding solar cell strings (1a to 1d) is maximized, and the boosting ratios during a second period are controlled so as to be maintained at a uniform value. The total amount of time of the first period and the second period is made to correspond to the first cycle.
摘要翻译：在本发明中，第一升压电路（41a〜41d）被插入到每条直流电力线（La〜Ld）上。对于第一周期的每次迭代，第一升压电路（41a至41d）的升压比在第一时段期间被可变地控制，使得对应的太阳能电池串（1a至1d）的发电功率最大化，并且控制第二期间的升压比，以保持均匀的值。第一周期和第二周期的总时间量对应于第一周期。

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