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    • 1. 发明申请
    • Method for producing group III Nitride-based compound semiconductor
    • 制备III族氮化物系化合物半导体的方法
    • US20080271665A1
    • 2008-11-06
    • US12081943
    • 2008-04-23
    • Shiro YAMAZAKISeiji NAGAITakayuki SATOKatsuhiro IMAIMakoto IWAITakatomo SASAKIYusuke MORIFumio KAWAMURA
    • Shiro YAMAZAKISeiji NAGAITakayuki SATOKatsuhiro IMAIMakoto IWAITakatomo SASAKIYusuke MORIFumio KAWAMURA
    • C30B15/00
    • C30B29/403C30B9/00C30B9/12C30B29/406
    • In the production of GaN through the flux method, deposition of miscellaneous crystals on the nitrogen-face of a GaN self-standing substrate and waste of raw materials are prevented. Four arrangements of crucibles and a GaN self-standing substrate are exemplified. In FIG. 1A, a nitrogen-face of a self-standing substrate comes into close contact with a sloped flat inner wall of a crucible. In FIG. 1B, a nitrogen-face of a self-standing substrate comes into close contact with a horizontally facing flat inner wall of a crucible, and the substrate is fixed by means of a jig. In FIG. 1C, a jig is provided on a flat bottom of a crucible, and two GaN self-standing substrates are fixed by means of the jig so that the nitrogen-faces of the substrates come into close contact with each other. In FIG. 1D, a jig is provided on a flat bottom of a crucible, and a GaN self-standing substrate is fixed on the jig so that the nitrogen-face of the substrate is covered with the jig. A flux mixture of molten gallium and sodium is charged into each crucible, and a GaN single crystal is grown on a gallium-face under pressurized nitrogen.
    • 在通过助熔剂制造GaN的情况下,可以防止在GaN自立基板的氮面上沉积杂晶,原料的浪费。 例示了四个坩埚和GaN自立衬底的布置。 在图 如图1A所示,自立基板的氮面与坩埚的倾斜的平坦的内壁紧密接触。 在图 如图1B所示,自立式基板的氮面与坩埚的水平面对的平坦的内壁紧密接触,通过夹具固定基板。 在图 如图1C所示,在坩埚的平坦底部设置夹具,并且通过夹具固定两个GaN自立基板,使得基板的氮气面彼此紧密接触。 在图 如图1D所示,在坩埚的平坦底部设置夹具,并且将GaN自立基板固定在夹具上,使得基板的氮面被夹具覆盖。 将熔融的镓和钠的助熔剂混合物装入每个坩埚中,并且在加压氮气下在镓面上生长GaN单晶。
    • 10. 发明申请
    • BLOOD PRESSURE REGULATING SYSTEM BY SUBSTITUTING NATIVE BIOLOGICAL REGULATORY FUNCTION
    • 血液压力调节系统采用生物生物学调节功能
    • US20110144714A1
    • 2011-06-16
    • US13032923
    • 2011-02-23
    • Kenji SUNAGAWAMasaru SUGIMACHITakayuki SATO
    • Kenji SUNAGAWAMasaru SUGIMACHITakayuki SATO
    • A61N1/36
    • A61N1/36114A61N1/365A61N1/36514
    • A blood pressure regulating system uses a native regulation rule to estimate at least one nerve activity in response to blood pressure changes, comprising at least one blood pressure sensing means which senses blood pressure and outputs a input blood pressure signal, a calculating means which receives the input blood pressure signal, calculates a transfer function by computing a Fourier transform of a normal blood pressure signal and a normal sympathetic nerve activity from normal cardiovascular system, calculates an impulse response by computing an inverse Fourier transform of the transfer function, calculates a sympathetic nerve stimulation signal using a convolution integral between the input blood pressure signal and the impulse response, and outputs the sympathetic nerve stimulation signal, and a stimulating means which receives the sympathetic nerve stimulation signal, and stimulates the sympathetic nerve innervating vascular beds based on the sympathetic nerve stimulation signal such that blood pressure is regulated.
    • 血压调节系统使用天然调节规则来估计响应于血压变化的至少一个神经活动,包括至少一个感测血压并输出输入血压信号的血压感测装置,接收所述血压调节系统的计算装置 输入血压信号,通过计算正常血压信号的傅立叶变换和正常心血管系统的正常交感神经活动计算传递函数,通过计算转移函数的傅里叶逆变换计算脉冲响应,计算交感神经 刺激信号使用输入血压信号和脉冲响应之间的卷积积分,并输出交感神经刺激信号,以及刺激装置,其接收交感神经刺激信号,并且刺激基于交感神经支配血管的交感神经 刺激信号 使血压受到调节。